SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL l a r e t o o n f a f r d e DESCRIPTION e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E 9R N 3 1 8 6 E N B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz 00 (CHIP) 35 (MICRO-X) • LOW COST NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. Minimum Noise Figure, NF min (dB) VCE = 3 V, IC = 5 mA MSG 20 MAG 3.0 10 2.0 0 GA NF 1.0 0.5 1.0 2.0 Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (dB) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 3.0 Frequency, f (GHz) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005 NE681 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS fT NF GNF |S21E|2 PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA NE68100 00 (CHIP) UNITS MIN TYP MAX GHz GHz NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz dB dB 1.6 Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz dB dB 12 Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz f = 2 GHz dB dB 9.0 7.0 7.0 1.4 1.8 1.5 1.6 14 14 10 13.5 9 13 15 9 14 8 13 7.5 50 100 1.2 2.5 2.3 9 17 11 50 100 Forward Current Gain2 at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz VCB = 10 V, IE = 0 mA, f = 1 MHz pF pF hFE ICBO RTH (J-A) PT 250 80 Thermal Resistance (Junction to Ambient) °C/W Total Power Dissipation 250 mW 160 0.45 0.2 0.7 0.25 40 0.9 240 0.45 0.9 0.8 80 833 1000 833 600 150 100 150 ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA NF GNF |S21E|2 UNITS NE68133 NE68135 NE68139/39R 2SC3583 2SC3604 2SC4094 33 35 39 MIN TYP MAX MIN TYP MAX MIN TYP MAX GHz GHz 9.0 Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz dB dB 1.2 Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz dB dB 13 Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz f = 2 GHz dB dB 11 9.0 9.0 2 1.2 1.6 2 2.3 13.5 12 12.5 7 9 11 250 50 100 15 8.5 hFE Forward Current Gain2 at VCE= 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 10 V, IE = 0 mA, f = 1 MHz RTH (J-A) PT 50 pF 100 0.35 0.9 0.2 250 0.7 50 100 0.25 200 0.8 Thermal Resistance (Junction to Ambient) °C/W 625 590 625 Total Power Dissipation mW 200 295 200 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. NE681 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 mA 65 IC Collector Current TJ Operating Junction Temperature °C 1502 Storage Temperature °C -55 to +1503 TSTG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. TJ for NE68135 and NE68100 is 200°C. 3. Maximum storage temperature for the NE68135 is -65 to +150°C. NFOPT GA (MHz) (dB) (dB) VCE = 2.5 V, IC = 0.3 mA 500 1.24 9.26 800 1000 1.67 2.18 6.95 6.02 ANG NFOPT GA (MHz) (dB) (dB) ΓOPT MAG ANG Rn/50 VCE = 8 V, IC = 7 mA 500 1.3 26.42 0.20 91 0.20 1000 1.45 20.54 0.20 148 0.21 2000 2.1 14.41 0.22 178 0.51 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NFOPT GA (MHz) (dB) (dB) 500 ΓOPT MAG FREQ. ΓOPT MAG ANG Rn/50 VCE = 2.5 V, IC = 0.3 mA NE68119 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NE68100 TYPICAL NOISE PARAMETERS (TA = 25°C) Rn/50 1.48 10.23 0.74 43 1.35 0.92 800 1.90 10.15 0.72 79 1000 2.15 9.00 0.69 99 0.60 1500 2.70 4.46 0.66 126 0.38 0.42 VCE = 2.5 V, IC = 1 mA 0.73 42 1.70 0.74 72 1.01 500 1.10 14.69 0.65 45 0.78 800 1.26 12.73 0.60 80 0.30 1000 1.40 11.29 0.56 99 0.24 1.80 7.40 0.53 123 0.17 0.70 90 VCE = 2.5 V, IC = 1 mA 500 0.97 13.86 0.66 43 0.46 1500 800 1.19 9.12 0.59 48 0.35 2000 2.22 6.14 0.47 166 0.12 2500 2.75 4.89 0.49 -166 0.08 0.25 1000 10.09 0.56 89 0.30 1500 1.71 7.99 VCE = 2.5 V, IC = 3 mA 1.31 0.50 131 0.16 VCE = 2.5 V, IC = 3 mA 500 1.00 17.28 0.47 44 500 0.92 17.19 0.49 39 0.28 800 1.06 14.35 0.44 83 0.21 800 1.02 14.23 0.40 68 0.17 1000 1.16 12.69 0.43 100 0.17 1000 1.11 12.78 0.38 87 0.14 1500 1.46 9.50 0.39 130 0.12 1500 1.42 10.30 0.39 134 0.08 2000 1.80 7.70 0.35 177 0.11 8.24 0.36 165 0.11 2500 2.15 6.03 0.35 -177 0.09 50 0.27 0.18 2000 1.82 VCE = 3 V, IC = 5 mA VCE = 8 V, IC = 7mA 500 1.00 19.00 0.37 43 0.20 800 1.10 15.57 0.31 71 0.15 1000 1.19 13.91 0.30 89 0.13 1500 1.40 11.25 0.33 139 0.09 2000 1.70 9.08 0.32 166 0.11 2500 2.05 7.62 0.36 -163 0.13 20.30 0.36 39 0.22 VCE = 8 V, IC = 7 mA 500 1.10 500 1.30 20.34 0.29 1000 1.40 13.96 0.25 84 2000 1.80 8.56 0.25 155 0.16 3000 2.50 5.64 0.48 -167 0.10 4000 3.60 4.50 0.67 -135 0.20 NE68135 TYPICAL NOISE PARAMETERS (TA = 25°C) 800 1.20 16.82 0.28 64 0.16 1000 1.30 15.10 0.28 81 0.14 FREQ. NFOPT GA 130 0.11 (MHz) (dB) (dB) MAG 1500 1.50 12.35 0.28 2000 1.77 10.21 0.28 158 0.12 2500 2.10 8.85 0.33 -166 0.14 3000 2.40 7.86 0.44 -141 0.16 VCE = 8 V, IC = 7 mA 1000 1.1 ΓOPT ANG Rn/50 0.22 17.33 0.28 71 2000 1.6 13.60 0.37 160 0.15 4000 3.4 9.25 0.51 -139 0.27 NE681 SERIES NE68133 TYPICAL NOISE PARAMETERS (TA = 25°C) NE68139 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NFOPT GA (MHz) (dB) (dB) MAG ANG Rn/50 VCE = 2.5 V, IC = 0.3 mA 500 1.21 12.45 0.75 47 1.15 ΓOPT FREQ. NFOPT GA (MHz) (dB) (dB) MAG ANG Rn/50 1.28 ΓOPT VCE = 2.5 V, IC = 0.3 mA 500 1.20 14.10 0.78 47 800 1.69 7.72 0.74 72 0.97 800 1.45 8.42 0.75 72 0.84 1000 1.95 5.96 0.68 88 0.71 1000 1.67 8.37 0.68 95 0.56 1500 2.52 3.12 0.63 122 0.34 15.71 0.63 44 0.43 VCE = 2.5 V, IC = 1.0 mA VCE = 2.5 V, IC = 1 mA 500 0.90 500 .92 14.52 0.68 47 0.42 800 1.10 12.30 0.56 72 0.26 800 1.20 10.57 0.63 70 0.34 1000 1.26 11.66 0.53 98 0.20 1000 1.35 9.29 0.57 87 0.30 1500 1.70 8.85 0.49 145 0.12 1500 1.71 6.53 0.50 120 0.17 0.57 178 0.07 2000 2.00 5.53 0.44 168 0.11 2000 2.20 7.12 VCE = 2.5 V, IC = 3 mA 0.45 44 0.25 VCE = 2.5 V, IC = 3 mA 500 0.88 18.20 500 0.86 16.37 0.54 47 0.24 800 1.00 14.62 0.39 73 0.19 800 1.00 12.41 0.51 67 0.20 1000 1.08 13.29 0.37 99 0.16 1000 1.08 11.07 0.46 86 0.18 1500 1.30 10.54 0.35 151 0.09 1500 1.25 8.61 0.36 128 0.12 2000 1.80 8.60 0.43 -177 0.07 2000 1.40 6.99 0.35 172 0.10 VCE = 8 V, IC = 7 mA 500 1.15 20.50 0.26 42 0.17 1000 1.25 15.62 0.16 133 0.14 1500 1.4 12.49 0.20 176 0.09 2000 1.6 10.48 0.31 -165 0.14 3000 2.15 8.00 0.53 -123 0.48 4000 3.0 6.81 0.71 -101 0.90 TYPICAL PERFORMANCE CURVES (TA = 25°C) NE68100 & NE68135 INSERTION GAIN vs. COLLECTOR CURRENT FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 12 VCE = 8 V IC = 20 mA 25 |S21E|2 NE68100 MAG NE68135 20 15 10 NE68133 |S21E| 2 MAG 5 0 f = 2 GHz VCE = 8 V Insertion Gain, |S21E|2 (dB) Insertion Gain, |S21E|2 (dB) Maximum Available Gain, MAG (dB) 30 10 f = 3 GHz 8 f = 4 GHz 6 4 2 0 0.1 0.2 0.3 0.5 0.7 1 2 Frequency, f (GHz) 3 5 7 10 1 2 3 5 7 10 20 Collector Current, IC (mA) 30 50 NE681 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) DC POWER DERATING CURVES COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Collector to Base Capacitance, COB (pF) Total Power Dissipation, PT (mW) 400 300 200 NE68135 NE68133 100 0 0 50 100 150 3.0 2.0 1.0 0.7 0.5 0.3 NE68133 0.2 NE68135 0.1 200 1 2 3 5 7 10 30 Collector to Base Voltage, VCB (V) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 50 50 Gain Bandwidth Product, fT (GHz) VCE = 8 V 300 200 100 70 50 30 20 10 VCE = 8 V 30 20 10 7 5 3 2 1 1 2 3 5 7 10 20 30 50 1 2 3 5 7 10 20 30 Collector Current, IC (mA) Collector Current, IC (mA) NE68133 NOISE FIGURE vs. COLLECTOR CURRENT NE68100 & NE68135 NOISE FIGURE vs. COLLECTOR CURRENT 50 3.0 3.0 VCE = 8 V f = 2 GHz VCE = 8 V f = 1 GHz 2.5 2.5 Noise Figure, NF (dB) Noise Figure, NF (dB) 20 Ambient Temperature, TA (°C) 500 DC Forward Current Gain, hFE 5.0 2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 0 0 1 2 3 5 7 10 20 Collector Current, IC (mA) 30 50 1 2 3 5 7 10 20 Collector Current, IC (mA) 30 50 NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 90˚ 120˚ j100 j25 S11 17 GHz 60˚ 150˚ 30˚ j10 0 S12 17 GHz 10 25 50 S22 17 GHz 180˚ 0 100 S11 0.1 GHz S21 0.1 GHz S12 0.1 0.2 0.3 0.4 0.5 0˚ 0.1 GHz S21 17 GHz 10 S22 0.1 GHz -j10 15 -150˚ NE68100 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 7 mA) -j100 -j25 -j50 S11 S21 MAG ANG 0.827 0.809 0.742 0.701 0.689 0.686 0.687 0.693 0.699 0.708 0.717 0.721 0.725 0.726 0.724 0.722 -20.8 -49.5 -101.1 -139.2 -156.6 -167.2 179.8 172.2 166.6 162.1 157.0 151.7 145.5 137.6 131.2 123.6 -47.0 -85.3 -135.8 -161.1 -171.7 -178.4 172.7 167.3 162.6 159.0 154.5 149.4 143.5 135.9 129.4 122.1 MAG -30˚ 20 -120˚ S21 25 -60˚ -90˚ S12 S22 K ANG MAG1 ANG MAG ANG MAG (dB) 19.513 17.981 12.631 7.498 5.182 3.959 2.687 2.048 1.662 1.431 1.250 1.105 0.989 0.868 0.773 0.673 163.9 151.0 123.0 101.5 90.4 82.0 69.7 59.1 49.8 41.1 31.7 23.3 14.2 5.9 -2.0 -9.7 0.012 0.022 0.038 0.047 0.049 0.053 0.061 0.071 0.081 0.096 0.116 0.125 0.146 0.169 0.179 0.192 88.3 65.5 42.2 36.7 33.0 35.0 45.9 48.7 53.2 57.0 56.6 56.9 55.9 54.9 51.9 49.0 0.964 -7.0 0.894 -16.8 0.691 -27.4 0.536 -29.0 0.483 -28.6 0.461 -29.2 0.447 -33.6 0.449 -40.6 0.454 -48.0 0.473 -57.1 0.490 -66.8 0.519 -76.0 0.549 -86.4 0.582 -96.0 0.621 -104.8 0.663 -114.1 0.03 0.13 0.28 0.47 0.71 0.88 1.11 1.21 1.27 1.15 0.99 0.97 0.83 0.74 0.71 0.69 32.1 29.1 25.2 22.0 20.2 18.7 14.4 11.8 10.0 9.4 10.3 9.5 8.3 7.1 6.4 5.4 38.130 31.089 16.975 9.066 6.113 4.627 3.112 2.361 1.913 1.643 1.433 1.266 1.134 1.001 0.897 0.787 154.1 135.9 108.9 93.2 84.9 78.3 67.9 58.6 50.1 42.2 33.3 25.4 16.7 8.4 0.5 -7.1 0.011 0.017 0.025 0.028 0.036 0.042 0.054 0.071 0.086 0.103 0.123 0.133 0.153 0.171 0.185 0.197 90.0 70.3 45.4 49.5 49.6 53.2 59.2 62.6 63.5 65.1 63.2 60.6 60.4 57.3 53.9 51.8 0.885 -15.0 0.753 -26.0 0.504 -30.8 0.404 -27.0 0.377 -26.3 0.369 -26.6 0.361 -31.6 0.362 -38.5 0.372 -45.8 0.386 -55.5 0.405 -65.0 0.433 -74.2 0.464 -84.5 0.500 -94.4 0.546 -103.2 0.587 -112.6 0.01 0.12 0.45 0.82 0.97 1.10 1.25 1.21 1.19 1.08 0.94 0.91 0.84 0.76 0.71 0.72 35.4 32.6 28.3 25.1 22.3 18.5 14.6 12.5 10.8 10.3 10.7 9.8 8.7 7.7 6.9 6.0 VCE = 8 V, IC = 20 mA 100 200 500 1000 1500 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.665 0.664 0.663 0.663 0.667 0.669 0.676 0.686 0.693 0.705 0.719 0.727 0.726 0.733 0.732 0.728 S-Parameters include bond wires. BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309 µm) long each wire. COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203 µm) long each wire. EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494 µm) long each wire. WIRE: 0.0007" (17.7 µm) dia., gold. Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 90˚ 10 25 50 S22 5 GHz 100 60˚ 150˚ S11 5 GHz j10 0 120˚ j100 j25 30˚ S21 0.5 GHz S11 0.05 GHz 0 S22 0.05 GHz S12 0.5 GHz 180˚ 0.2 0.3 4 S21 5 GHz 0.5 0˚ S12 5 GHz -j10 6 -150˚ -30˚ 8 -j100 -j25 Coordinates in Ohms Frequency in GHz (VCE = 2.5 V, IC = 3 mA) -j50 NE68119 VCE = 2.5 V, IC = 0.3 mA FREQUENCY (MHz) 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 S11 MAG 0.995 0.992 0.981 0.967 0.950 0.929 0.915 0.892 0.874 0.853 0.838 0.770 0.723 0.693 S21 ANG MAG -120˚ S21 10 S12 S22 ANG MAG ANG -60˚ -90˚ MAG K ANG MAG1 (dB) -6.1 -11.9 -23.5 -35.3 -46.1 -57.0 -67.0 -77.0 -86.0 -94.5 -102.9 -139.2 -170.6 132.2 1.283 1.081 1.038 1.021 0.985 0.952 0.936 0.888 0.869 0.808 0.784 0.652 0.564 0.441 174.1 170.4 158.4 149.2 139.2 130.0 121.0 112.7 105.0 97.2 90.6 61.2 39.0 9.0 0.017 0.027 0.052 0.078 0.096 0.114 0.130 0.144 0.153 0.160 0.165 0.169 0.146 0.085 88.1 80.9 74.0 65.0 58.4 52.4 44.5 38.5 32.7 27.3 21.8 1.6 -12.7 6.0 0.997 0.995 0.991 0.989 0.979 0.962 0.948 0.937 0.928 0.916 0.908 0.869 0.842 0.803 -1.1 -4.5 -9.3 -14.3 -18.2 -22.5 -26.4 -30.1 -33.9 -37.1 -40.5 -54.5 -66.5 -91.2 0.02 0.06 0.11 0.15 0.20 0.23 0.30 0.33 0.36 0.42 0.45 0.66 0.95 1.98 18.8 16.0 13.0 11.2 10.1 9.2 8.6 7.9 7.5 7.0 6.8 5.9 5.9 1.5 -8.4 -15.9 -30.0 -44.6 -57.8 -70.1 -81.8 -92.3 -102.0 -110.7 -118.7 -153.7 177.3 125.5 4.317 3.510 3.384 3.234 3.069 2.855 2.671 2.502 2.341 2.195 2.041 1.547 1.255 0.940 172.8 166.3 155.6 145.3 134.8 125.6 116.9 109.0 102.0 95.1 89.4 63.8 43.4 10.4 0.016 0.026 0.049 0.069 0.090 0.104 0.115 0.122 0.127 0.133 0.135 0.132 0.124 0.132 87.7 77.4 71.9 60.3 54.9 45.7 40.8 34.6 29.9 25.9 21.6 9.1 6.7 20.2 0.990 0.986 0.971 0.949 0.918 0.883 0.850 0.822 0.798 0.778 0.762 0.706 0.672 0.627 -1.3 -7.5 -13.0 -19.4 -24.6 -29.1 -33.4 -37.2 -40.6 -43.4 -46.4 -58.1 -68.2 -89.7 0.04 0.10 0.09 0.15 0.17 0.25 0.28 0.33 0.38 0.43 0.48 0.75 1.07 1.41 24.3 21.3 18.4 16.7 15.3 14.4 13.7 13.1 12.7 12.2 11.8 10.7 8.4 4.7 -13.0 -22.9 -44.6 -63.4 -79.9 -93.8 -106.0 -116.4 -125.9 -134.1 -141.6 -172.6 162.4 117.0 10.816 9.618 8.856 7.858 6.982 6.172 5.458 4.898 4.429 4.032 3.696 2.618 2.042 1.474 167.8 161.4 145.9 133.0 121.6 112.2 104.1 97.3 91.1 85.5 80.6 59.5 41.8 11.1 0.014 0.023 0.044 0.061 0.071 0.080 0.086 0.089 0.093 0.095 0.099 0.113 0.130 0.187 85.2 76.5 65.5 55.3 48.3 42.4 38.7 36.7 34.0 33.3 32.1 29.1 28.7 24.2 0.970 0.955 0.907 0.830 0.761 0.699 0.651 0.613 0.587 0.565 0.549 0.508 0.485 0.448 -5.3 -12.0 -21.5 -29.5 -35.9 -39.7 -43.3 -46.0 -48.2 -50.1 -52.3 -59.9 -67.6 -85.5 0.08 0.10 0.16 0.25 0.32 0.41 0.48 0.55 0.62 0.69 0.74 0.99 1.15 1.16 28.9 26.2 23.0 21.1 19.9 18.9 18.0 17.4 16.8 16.3 15.7 13.6 9.6 6.5 VCE = 2.5 V, IC = 1.0 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 0.979 0.965 0.944 0.915 0.877 0.836 0.802 0.770 0.741 0.714 0.694 0.616 0.572 0.555 VCE = 2.5 V, IC = 3 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 0.937 0.904 0.839 0.771 0.699 0.642 0.598 0.564 0.534 0.511 0.494 0.438 0.409 0.410 See note on next page. NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 90˚ j50 j25 120˚ j100 j150 j10 0 60˚ S12 2 GHz 150˚ 30˚ j250 10 25 S11 2 GHz 50 S21 0.1 GHz 100 150 250 500 10 S21 2 GHz 180˚ 0 S12 .05 .10 .15 0.1 GHz S22 0.1 GHz -j10 S22 2 GHz S11 0.1 GHz 20 25 0˚ 10 -j250 15 -150˚ -j150 -30˚ 20 -j50 NE68133 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 3000 S11 MAG 0.802 0.639 0.344 0.170 0.115 0.098 0.137 Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 10 mA) -j100 -j25 S21 S12 S21 25 -120˚ -60˚ -90˚ S22 K MAG1 ANG -27.1 -49.2 -83.3 -113.4 -144.1 -176.3 137.6 MAG 17.578 14.213 7.671 4.126 2.870 2.254 1.669 ANG 153.8 134.2 105.5 86.7 75.3 66.2 53.2 MAG 0.023 0.039 0.065 0.109 0.160 0.212 0.313 ANG 68.7 69.8 67.8 73.5 74.8 74.7 73.2 MAG 0.918 0.783 0.579 0.491 0.454 0.438 0.409 ANG -12.7 -19.9 -21.5 -17.7 -17.8 -16.9 -21.0 0.37 0.46 0.81 1.01 1.05 1.04 0.99 (dB) 28.8 25.6 20.7 15.2 11.2 9.0 7.3 -31.7 -54.5 -87.1 -115.8 -146.2 180.0 134.2 21.212 16.031 8.093 4.284 2.981 2.350 1.736 148.4 127.9 102.0 85.3 75.2 66.5 53.9 0.017 0.037 0.061 0.109 0.165 0.217 0.320 57.9 69.0 72.6 76.3 75.9 75.2 73.7 0.896 0.737 0.540 0.461 0.430 0.413 0.380 -14.6 -21.7 -20.9 -17.0 -16.5 -16.8 -21.3 0.50 0.54 0.88 1.04 1.04 1.03 0.99 31.0 26.4 21.2 14.7 11.3 9.3 7.3 -43.3 -66.3 -95.5 -127.5 -160.8 167.0 132.5 29.285 19.280 8.683 4.512 3.078 2.406 1.774 138.1 117.5 96.1 82.3 73.3 64.9 53.1 0.013 0.035 0.057 0.110 0.167 0.221 0.322 61.2 73.1 74.0 79.6 78.9 74.9 72.4 0.792 0.614 0.481 0.440 0.416 0.404 0.379 -19.4 -22.6 -16.5 -13.2 -13.9 -13.8 -19.4 0.57 0.69 0.98 1.03 1.04 1.02 0.98 33.5 27.4 21.8 15.1 11.4 9.5 7.4 -46.9 -70.7 -100.5 -136.1 -175.0 156.0 128.4 30.197 19.196 8.499 4.363 3.009 2.348 1.742 135.2 115.1 94.8 81.7 72.7 65.0 53.0 0.017 0.029 0.059 0.111 0.167 0.219 0.325 65.9 73.4 77.7 80.7 80.1 77.1 74.2 0.836 0.664 0.503 0.455 0.428 0.415 0.387 -17.4 -22.2 -17.7 -14.3 -14.2 -14.2 -19.7 0.50 0.67 0.95 1.03 1.03 1.03 0.98 32.5 28.2 21.6 14.9 11.5 9.2 7.3 VCE = 8 V, IC = 10 mA 100 200 500 1000 1500 2000 3000 0.744 0.553 0.277 0.134 0.092 0.079 0.122 VCE = 8 V, IC = 20 mA 100 200 500 1000 1500 2000 3000 0.594 0.389 0.175 0.089 0.064 0.070 0.120 VCE = 8 V, IC = 30 mA 100 200 500 1000 1500 2000 3000 0.557 0.354 0.158 0.080 0.065 0.076 0.127 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 5 GHz 5 GHz S21 0.1 GHz S22 S11 0.1 GHz 0.1 GHz S12 0.1 GHz 5 GHz 5 GHz Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 10 mA) NE68135 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 5 00 1000 1500 2000 3000 4000 5000 S11 S21 S12 S22 K MAG1 (dB) MAG ANG MAG ANG MAG ANG MAG ANG .836 .659 .585 .557 .562 .561 .562 .563 -26.1 -105.0 -146.1 -167.0 -180.0 159.6 142.8 127.0 18.427 11.481 6.625 4.555 3.507 2.413 1.854 1.516 160.4 114.7 90.3 75.5 63.9 43.4 25.1 8.0 .014 .041 .051 .058 .068 .088 .113 .142 73.6 44.3 38.3 39.3 41.3 43.1 41.9 38.7 .959 .654 .512 .472 .462 .468 .490 .522 -11.3 -33.2 -38.5 -43.1 -49.4 -64.3 -80.4 -96.0 0.16 0.38 0.68 0.93 1.02 1.11 1.07 0.98 31.1 24.4 21.1 18.9 16.4 12.4 10.6 10.3 -32.1 -117.6 -154.7 -173.1 175.3 156.5 140.6 125.2 24.097 13.015 7.233 4.925 3.778 2.590 1.990 1.629 157.2 109.6 87.5 73.9 62.9 43.3 25.5 8.7 .013 .036 .045 .055 .067 .091 .119 .149 73.4 44.6 43.2 45.8 47.6 47.4 44.2 39.4 .937 .582 .457 .425 .420 .428 .452 .486 -13.9 -35.2 -38.5 -42.6 -48.8 -63.7 -79.7 -95.2 0.15 0.47 0.79 1.00 1.05 1.09 1.05 0.96 32.6 25.6 22.0 19.4 16.1 12.7 10.9 10.4 -49.9 -139.7 -168.1 -177.7 168.5 151.9 137.2 122.7 36.807 14.980 7.916 5.328 4.072 2.780 2.131 1.745 149.3 101.5 83.2 71.3 61.1 42.7 25.5 9.0 .012 .027 .038 .051 .065 .094 .124 .156 67.4 49.0 53.7 56.2 56.6 53.4 47.8 41.3 .877 .475 .392 .375 .376 .389 .415 .451 -19.2 -34.9 -35.7 -39.9 -46.5 -61.9 -78.1 -93.7 0.21 0.66 0.95 1.08 1.09 1.07 1.01 0.94 35.0 27.5 23.2 18.4 16.2 13.1 11.6 10.5 -64.1 -150.2 -173.7 173.7 165.5 149.8 135.7 121.2 43.452 15.238 7.926 5.318 4.058 2.767 2.118 1.731 144.0 97.9 81.2 69.9 60.1 41.9 24.9 8.5 .010 .023 .036 .049 .064 .094 .125 .157 64.1 52.7 58.9 60.7 60.2 55.9 49.8 42.9 .831 .441 .381 .370 .374 .390 .416 .453 -21.9 -32.3 -32.9 -37.8 -44.9 -60.9 -77.4 -93.3 0.26 0.77 1.01 1.11 1.09 1.06 1.00 0.92 36.3 28.2 22.7 18.3 16.1 13.2 12.1 10.4 VCE = 8 V, IC = 10 mA 100 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 VCE = 8 V, IC = 30 mA 100 500 1000 1500 2000 3000 4000 5000 .575 .539 .537 .532 .541 .549 .552 .553 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) 90˚ 1 .6 2 S12 3 GHz 135˚ S22 3 GHz 45˚ 4 .2 10 0 .2 .6 1 2 4 10 S22 0.5 GHz -10 S11 0.5 GHz S11 3 GHz S12 0.5 GHz S21 180˚ 0.5 GHz S21 3 GHz 0.05 0.10 0.15 0˚ 2.5 5 -.2 -4 -2 -.6 -1 NE68139 VCE = 2.5 V, IC = 0.3 mA FREQUENCY (MHz) 50 100 200 300 400 500 600 800 1000 1500 2000 3000 S11 S21 MAG 0.996 0.995 0.990 0.973 0.953 0.931 0.909 0.862 0.819 0.744 0.732 0.762 ANG 7.5 Coordinates in Ohms Frequency in GHz (VCE = 2.5 V, IC = 3 mA) 315˚ 225˚ 10 270˚ S12 S22 K ANG MAG1 (dB) MAG ANG MAG ANG MAG -3.4 -11.4 -20.3 -30.7 -41.2 -50.3 -60.5 -79.9 -98.5 -140.0 -173.0 142.1 1.089 1.079 1.071 1.032 0.993 0.991 1.008 0.908 0.871 0.729 0.632 0.438 175.2 173.1 161.9 153.6 145.9 137.2 129.9 114.3 101.2 72.2 51.7 28.5 0.014 0.027 0.050 0.075 0.098 0.122 0.138 0.167 0.184 0.192 0.155 0.089 83.2 80.3 74.5 68.7 64.3 59.3 53.5 42.7 33.4 14.1 3.4 8.4 0.995 0.993 0.989 0.985 0.976 0.965 0.949 0.918 0.888 0.828 0.802 0.770 -1.1 -2.7 -5.7 -8.7 -11.4 -13.8 -16.4 -21.0 -25.0 -35.2 -46.3 -76.7 0.13 0.06 0.16 0.19 0.19 0.25 0.28 0.37 0.45 0.66 0.85 1.62 18.9 16.0 13.3 11.4 10.1 9.1 8.6 7.4 6.8 5.8 5.0 2.3 -6.8 -14.8 -27.5 -40.4 -53.8 -65.2 -76.9 -98.4 -117.6 -157.8 173.8 136.9 3.763 3.648 3.497 3.346 3.184 3.043 2.880 2.516 2.237 1.686 1.346 0.941 175.3 171.0 159.1 149.4 140.6 131.8 124.1 109.8 98.4 74.8 56.9 30.9 0.016 0.029 0.050 0.070 0.092 0.106 0.119 0.137 0.145 0.145 0.130 0.144 86.4 82.4 74.3 65.4 58.7 53.8 47.7 38.9 32.3 23.5 24.6 47.4 0.989 0.980 0.963 0.946 0.916 0.884 0.845 0.778 0.726 0.631 0.583 0.538 -2.8 -4.8 -9.5 -13.9 -17.8 -20.9 -24.1 -28.6 -31.9 -39.8 -48.9 -75.9 0.01 0.01 0.10 0.17 0.20 0.25 0.30 0.40 0.49 0.75 1.04 1.21 23.7 21.0 18.4 16.8 15.4 14.6 13.8 12.6 11.9 10.7 8.9 5.4 -10.7 -23.5 -42.0 -60.3 -76.4 -90.0 -103.0 -125.0 -143.4 -178.4 159.4 130.6 10.426 9.954 9.011 8.067 7.165 6.329 5.660 4.558 3.815 2.684 2.078 1.442 172.1 164.8 148.6 136.2 125.8 117.1 109.8 97.8 88.7 70.7 56.4 34.1 0.015 0.027 0.046 0.061 0.074 0.083 0.089 0.099 0.106 0.123 0.141 0.197 84.7 79.0 67.6 57.7 52.4 49.8 46.7 43.3 42.0 43.6 47.3 49.7 0.975 0.972 0.910 0.826 0.754 0.690 0.634 0.552 0.496 0.412 0.362 0.302 -4.6 -9.6 -18.1 -24.5 -29.3 -32.3 -34.4 -37.1 -38.6 -43.3 -51.3 -78.6 0.07 0.05 0.19 0.29 0.35 0.43 0.50 0.65 0.77 0.99 1.11 1.08 28.4 25.7 22.9 21.2 19.9 18.8 18.0 16.6 15.6 13.4 9.7 6.9 VCE = 2.5 V, IC = 1.0 mA 50 100 200 300 400 500 600 800 1000 1500 2000 3000 0.985 0.971 0.942 0.914 0.876 0.828 0.790 0.715 0.663 0.596 0.600 0.660 VCE = 2.5 V, IC = 3 mA 50 100 200 300 400 500 600 800 1000 1500 2000 3000 0.916 0.895 0.829 0.755 0.694 0.619 0.574 0.500 0.470 0.453 0.481 0.567 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) NE68139 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 2000 3000 4000 5000 S11 MAG 0.764 0.675 0.569 0.481 0.432 0.398 0.374 0.354 0.339 0.332 0.333 0.343 0.332 0.343 0.348 0.414 0.502 0.595 0.650 S21 ANG -28 -55 -76 -94 -110 -120 -133 -141 -152 -159 -166 -174 180 173 171 150 126 110 97 MAG 17.806 15.233 12.659 10.620 8.886 7.696 6.888 6.073 5.422 4.963 4.576 4.264 3.912 3.656 3.433 2.656 1.829 1.426 1.119 S12 ANG 156 138 126 116 107 102 97 93 88 85 81 78 76 73 71 56 38 17 1 MAG 0.002 0.008 0.018 0.025 0.035 0.043 0.046 0.056 0.055 0.066 0.069 0.076 0.080 0.089 0.098 0.129 0.192 0.256 0.317 S22 ANG 53 70 61 59 59 58 59 59 60 61 62 62 63 63 66 60 60 50 44 MAG ANG 0.944 -12 0.855 -19 0.734 -22 0.698 -25 0.602 -24 0.589 -24 0.530 -26 0.522 -25 0.493 -28 0.493 -25 0.488 -28 0.457 -27 0.467 -29 0.449 -29 0.447 -29 0.388 -40 0.323 -63 0.302 -95 0.343 -126 K 0.91 0.54 0.69 0.74 0.86 0.86 0.99 0.97 1.13 1.05 1.08 1.09 1.12 1.09 1.06 1.04 1.00 0.88 0.83 MAG1 (dB) 39.5 32.8 28.5 26.3 24.0 22.5 21.8 20.4 17.7 17.4 16.5 15.7 14.8 14.3 13.9 11.9 9.8 7.5 5.5 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE681 SERIES NE68118 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE CBEPKG LE LC CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 UNITS Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC 0 NF 1.02 CJS 0 0.75 VAF 15 VJS IKF 0.055 MJS 0 ISE 1.77e-11 FC 0.5 14e-12 NE 2.1 TF BR 1 XTF 3 NR 1 VTF 25 VAR Infinity ITF 0.1 IKR Infinity PTF 0 ISC 0 TR 0.3e-9 NC 2 EG 1.11 RE 0.6 XTB 0 RB 12 XTI 3 RBM 3.7 KF 0 IRB 1.2e-5 AF 1 RC 8 CJE 1.2e-12 VJE 0.77 MJE 0.5 CJC 0.8e-12 VJC 0.27 (1) Gummel-Poon Model Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68118 0.07e-12 0.01e-12 1.16e-9 1.54e-9 0.83e-9 0.09e-12 0.51e-12 0.25e-12 0.18e-9 0.8e-9 0.09e-9 MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 Note: 1. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68119 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter UNITS BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS BF 2.7e-16 MJC 0.56 185.0 XCJC 0 NF 1.02 CJS 0 VAF 15.0 VJS 0.75 IKF 0.055 MJS 0 ISE 1.77e-11 FC 0.5 NE 2.1 TF 14.0e-12 BR 1 XTF 3 NR 1 VTF 25 VAR Infinity ITF 0.1 IKR Infinity PTF 0 ISC 0 TR 0.3e-9 NC 2 EG 1.11 RE 0.6 XTB 0 RB 12 XTI 3 RBM 3.7 KF 0 IRB 1.2e-5 AF 1 RC 8 CJE 1.2e-12 VJE 0.77 MJE 0.5 CJC 0.8e-12 VJC 0.27 (1) Gummel-Poon Model Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68119 0.07e-12 0.01e-12 1.13e-9 0.85e-9 0.18e-12 0.21e-12 0.19e-9 0.19e-9 0.19e-9 MODEL RANGE Frequency: 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters UNITS Q1 Parameter time seconds Units farads IS 2.7e-16 MJC 0.56 BF 185 XCJC 0 capacitance NF 1.02 CJS 0 inductance henries resistance ohms VAF 15 VJS 0.75 IKF 0.055 MJS 0 voltage volts ISE 1.77e-11 FC 0.5 current amps NE 2.1 TF 14e-12 BR 1 XTF 3 NR 1 VTF 25 VAR Infinity ITF 0.1 CCB 0.07e-12 IKR Infinity PTF 0 CCE 0.01e-12 ISC 0 TR 0.3e-9 LB 0.52e-9 NC 2 EG 1.11 LE 1.18e-9 RE 0.6 XTB 0 CCBPKG 0.12e-12 ADDITIONAL PARAMETERS Parameters 68130 RB 12 XTI 3 CCEPKG 0.16e-12 RBM 3.7 KF 0 CBEPKG 0.04e-12 IRB 1.2e-5 AF 1 LBX 0.2e-9 RC 8 LCX 0.8e-9 CJE 1.2e-12 LEX 0.2e-9 VJE 0.77 MJE 0.5 CJC 0.8e-12 VJC 0.27 MODEL RANGE Frequency: 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8 V, IC = 0.3 mA to 10 mA Date: 10/11/96 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68133 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters (1) UNITS Q1 Parameter Units IS 2.7e-16 MJC 0.56 time seconds BF 185 XCJC 0 capacitance farads NF 1.02 CJS 0 inductance henries 0.75 resistance ohms VAF 15 VJS IKF 0.055 MJS 0 voltage volts ISE 1.77e-11 FC 0.5 current amps NE 2.1 TF 14e-12 BR 1 XTF 3 NR 1 VTF 25 VAR Infinity ITF 0.1 IKR Infinity PTF 0 ISC 0 TR 0.3e-9 NC 2 EG 1.11 RE 0.6 XTB 0 RB 12 XTI 3 RBM 3.7 KF 0 IRB 1.2e-5 AF 1 RC 8 CJE 1.2e-12 VJE 0.77 MJE 0.5 CJC 0.8e-12 VJC 0.27 ADDITIONAL PARAMETERS Parameters 68133 CCB 0.07e-12 CCE 0.01e-12 LB 0.9e-9 LE 1.2e-9 CCBPKG 0.2e-12 CCEPKG 0.2e-12 CBEPKG 0.01e-12 LBX 0.3e-9 LCX 0.6e-9 LEX 0.3e-9 MODEL RANGE Frequency: 0.1 to 8.0 GHz Bias: VCE = 1 V to 8 V, IC = 1 mA to 30 mA Date: 7/97 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68135 NONLINEAR MODEL SCHEMATIC Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms RC_PKG LC_PKG 0.15nH CCE_PKG 0.2pF CBE_PKG 0.05pF LE_PKG 0.38nH RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF EMITTER BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter IS 2.7e-16 MJC 0.56 time seconds Units BF 185.0 XCJC 0 capacitance farads NF 1.02 CJS 0 inductance henries VAF 15.0 VJS 0.75 resistance ohms IKF 0.055 MJS 0 voltage volts current amps ISE 1.77e-11 FC 0.5 NE 2.1 TF 14e-12 BR 1 XTF 3 NR 1 VTF 25 0.1 VAR Infinity ITF IKR Infinity PTF 0 ISC 0 TR 0.3e-9 1.11 NC 2 EG RE 0.6 XTB 0 RB 12 XTI 3 RBM 3.7 KF 0 IRB 1.2e-5 AF 1 RC 8 CJE 1.2e-12 VJE 0.77 MJE 0.5 CJC 0.8e-12 VJC 0.27 (1) Gummel-Poon Model MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 8.0 V, IC = 7 mA to 30 mA Date: 11/1/96 NE681 SERIES NE68139 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) UNITS Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185.0 XCJC 0 NF 1.02 CJS 0 VAF 15.0 VJS 0.750 IKF 0.055 MJS 0 ISE 1.77e-11 FC 0.50 NE 2.1 TF 14.0e-12 Parameter time capacitance inductance resistance voltage current BR 1.0 XTF 3.0 NR 1.0 VTF 25.0 ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX VAR Infinity ITF 0.1 IKR Infinity PTF 0 ISC 0 TR 0.3e-9 NC 2.0 EG 1.11 RE 0.6 XTB 0 3.0 RB 12.0 XTI RBM 3.7 KF 0 IRB 1.2e-5 AF 1.0 RC 8.0 CJE 1.2e-12 VJE 0.77 MJE 0.50 CJC 0.8e-12 VJC 0.27 (1) Gummel-Poon Model Units seconds farads henries ohms volts amps 68139 0.07e-12 0.01e-12 0.88e-9 0.79e-9 0.7e-9 0.165e-12 0.165e-12 0.01e-12 0.39e-9 0.39e-9 0.2e-9 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 7 mA Date: 6/17/96 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) NE68100 (CHIP) (Chip Thickness: 160 mm) 0.35±0.01 0.13 BASE EMITTER 0.02 0.35±0.01 0.03φ PACKAGE OUTLINE 18 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 18 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 0.8 3 2 3 0.65 2 0.65 2.0 ± 0.2 1.3 0.60 0.6 0.65 1 4 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter +0.10 0.4 -0.05 0.3 0.9 ± 0.1 1.25 1 +0.10 0.15 -0.05 0 to 0.1 4 1.7 PACKAGE OUTLINE 19 1 PACKAGE OUTLINE 19 RECOMMENDED P.C.B. LAYOUT 1.6 ± 0.1 0.8 ± 0.1 2 1.3 1.6 ± 0.1 0.5 1.0 +0.1 0.2 - 0 3 2 +0.10 0.3 -0.05 LEAD 3 ONLY 1 3 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1.0 0.5 0.6 0.75 ± 0.05 0.6 1 0.6 +0.1 0.15 -0.05 0 to 0.1 PACKAGE OUTLINE 30 PACKAGE OUTLINE 30 RECOMMENDED P.C.B. LAYOUT 2.1 ± 0.2 1.25 ± 0.1 1.7 0.65 2.0 ± 0.2 2 2 1.3 3 +0.1 0.3 -0.05 (ALL LEADS) 3 1 MARKING PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0.15 0.9 ± 0.1 1.3 0.65 0.6 1 0.8 0 to 0.1 +0.10 0.15 -0.05 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT +0.2 2.8 -0.3 2.4 2 2.9 ± 0.2 0.95 2 1.9 +0.10 0.4 -0.05 (ALL LEADS) 3 3 1.9 1 +0.10 0.65 -0.15 +0.2 1.5 -0.1 1.1 to 1.4 0.8 0.95 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0.8 1 1.0 +0.10 0.16 -0.06 0 to 0.1 PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0.06 B C PIN CONNECTIONS 1.Collector 2. Emitter 3. Base 4. Emitter 45˚ E 2.55±0.2 φ2.1 +0.06 0.1 -0.04 1.8 MAX 0.55 PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 2.9 ± 0.2 0.95 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.4 3 3 2 1.9 0.85 PIN CONNECTIONS 1.Collector 2. Emitter 3. Base 4. Emitter 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 1.9 1.0 0.8 0.16 +0.10 -0.06 1 5˚ 5˚ 0 to 0.1 4 1.0 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39R PACKAGE OUTLINE 39R RECOMMENDED P.C.B. LAYOUT +0.2 2.8 -0.3 +0.10 0.6 -0.05 2.4 +0.2 1.5 -0.1 3 2 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 (LEADS 1, 3, 4) 0.16 +0.10 -0.06 0.8 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base 1.9 1.0 1 4 1.0 5˚ 5˚ 0 to 0.1 ORDERING INFORMATION (Solder Contains Lead) PART NUMBER QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 100 3000 3000 3000 3000 1 3000 3000 Waffle Pack Tape & Reel Tape & Reel Tape & Reel Tape & Reel ESD Bag Tape & Reel Tape & Reel ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY PACKAGING NE68100 NE68118-T1-A NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 100 3000 3000 3000 3000 1 3000 3000 Waffle Pack Tape & Reel Tape & Reel Tape & Reel Tape & Reel ESD Bag Tape & Reel Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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