PD - 97739
AUTOMOTIVE GRADE
AUIRF2804WL
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
V(BR)DSS
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
40V
RDS(on) max.
1.8m
ID (Silicon Limited)
295A
ID (Package Limited)
240A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
G
D
TO-262 WideLead
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Parameter
295
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
208
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
240
IDM
Pulsed Drain Current
Maximum Power Dissipation
1250
PD @TC = 25°C
300
W
VGS
EAS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
2.0
± 20
W/°C
V
420
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
ID @ TC = 25°C
c
c
h
d
g
640
See Fig.12a,12b,15,16
°C
-55 to + 175
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
A
mJ
300
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
Max.
Units
–––
0.50
°C/W
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RJC
Junction-to-Case
RCS
RJA
i
Parameter
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/10/11
AUIRF2804WL
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
VDSS/TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units
40
–––
–––
2.0
129
–––
–––
–––
–––
–––
0.0297
–––
–––
V
V/°C
1.57
–––
–––
–––
–––
–––
–––
1.8
4.0
–––
20
250
200
-200
m
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 187A
VDS = VGS, ID = 250μA
VDS = 10V, ID = 187A
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
150
42
47
19
241
71
100
4.5
225
–––
–––
–––
–––
–––
–––
–––
nC
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7978
1693
934
5422
1522
2115
–––
–––
–––
–––
–––
–––
pF
Min.
Typ.
Max.
Units
–––
–––
312
ns
nH
Conditions
ID = 187A
VDS = 32V
VGS = 10V
VDD = 20V
ID = 187A
RG = 2.6
VGS = 10V
Between lead,
e
d
D
6mm (0.25in.)
from package
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.024mH, RG = 50, IAS = 187A, VGS =10V.
Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
2
A
–––
–––
–––
–––
–––
–––
29
68
Conditions
MOSFET symbol
D
1250
showing the
integral reverse
1.3
44
102
p-n junction diode.
TJ = 25°C, IS = 187A, VGS = 0V
TJ = 25°C, IF = 187A, VDD = 20V
di/dt = 100A/μs
V
ns
nC
G
e
S
e
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value is determined from sample failure population,
starting TJ = 25°C, L=0.024mH, R G = 50, IAS = 187A, VGS =10V.
Ris measured at TJ of approximately 90°C.
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AUIRF2804WL
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
TO-262
WideLead
N/A
Class M4 (+/- 425V)†††
AEC-Q101-002
ESD
Human Body Model
Class H3A (+/- 4000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF2804WL
1000
1000
100
BOTTOM
BOTTOM
100
10
4.5V
4.5V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
1
0.1
1
10
100
0.1
1000
Fig 1. Typical Output Characteristics
10
100
1000
Fig 2. Typical Output Characteristics
10000
300
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
1000
100
10
T J = 175°C
T J = 25°C
1
VDS = 25V
60μs PULSE WIDTH
0.1
250
T J = 25°C
200
150
T J = 175°C
100
50
V DS = 10V
0
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
10
0
25
50
75
100
125
150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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AUIRF2804WL
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 187A
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
10000
12.0
VGS, Gate-to-Source Voltage (V)
C rss = C gd
Coss
Crss
1000
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
100
0.0
1
10
100
0
20
VDS, Drain-to-Source Voltage (V)
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
40
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
1msec
100μsec
100
10msec
10
DC
1
VGS = 0V
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.6
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2804WL
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
300
Limited By Package
ID, Drain Current (A)
250
200
150
100
50
ID = 187A
1.8
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0
25
50
75
100
125
150
-60 -40 -20 0 20 40 60 80 100120140160180
175
T J , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.001
0.0001
1E-006
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF2804WL
15V
DRIVER
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1800
ID
TOP
40A
75A
BOTTOM 187A
1600
1400
D.U.T
RG
20V
VGS
+
V
- DD
IAS
1200
A
1000
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
800
600
400
200
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
4.5
10 V
QGD
VGS(th) , Gate threshold Voltage (V)
QGS
VG
Charge
Fig 13a. Basic Gate Charge Waveform
4.0
3.5
3.0
2.5
2.0
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25
L
DUT
0
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
VCC
Fig 14. Threshold Voltage vs. Temperature
1K
Fig 13b. Gate Charge Test Circuit
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7
AUIRF2804WL
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
450
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 187A
EAR , Avalanche Energy (mJ)
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF2804WL
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width µs
Duty Factor
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF2804WL
TO-262 WideLead Package Outline
Dimensions are shown in millimeters (inches)
TO-262 WideLead Part Marking Information
Part Number
AUIRF2804WL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF2804WL
Ordering Information
Base part
number
Package Type
AUIRF2804WL
TO-262 WideLead
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Standard Pack
Form
Tube
Quantity
50
Complete Part Number
AUIRF2804WL
11
AUIRF2804WL
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU
prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and
process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IRs standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
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designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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