Zetex FMMV2103 Sot23 silicon planar variable capacitance diode Datasheet

FMMV2101
to
FMMV2109
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 – JANUARY 1996
✪
PIN CONFIGURATION
PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
1
2
1
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Reverse Breakdown
Voltage
VBR
30
Reverse current
IR
Series Inductance
LS
TYP.
MAX.
20
3.0
Diode Capacitance
TCC
Temperature Coefficient
280
Case Capacitance
0.15
CC
400
TUNING CHARACTERISTICS (at Tamb = 25°C).
Type No.
FMMV2101
FMMV2103
FMMV2104
FMMV2105
FMMV2107
FMMV2108
FMMV2109
Nominal Capacitance (pF)
VR = 4V, f=1MHz
Min.
6.1
9.0
10.8
13.5
19.8
24.3
29.3
Nom.
6.8
10.0
12.0
15.0
22.0
27.0
33.0
UNIT
CONDITIONS.
V
IR = 10µA
nA
VR = 25V
nH
f=250MHz
Lead length≈1.5mm
ppm/ °C
VR = 4V, f=1MHz
Lead length≈1.5mm
pF
f=1MHz
Q – Figure of MERIT
VR = 4V, f=50MHz
Max.
7.5
11.0
13.2
16.5
24.2
29.7
36.3
450
400
400
400
350
300
280
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
Turning Ratio
C2 / C30
f=1MHz
Min.
Max.
2.5
3.3
2.6
3.3
2.6
3.3
2.6
3.3
2.7
3.3
2.7
3.3
2.7
3.3
Partmark
Detail
6R
6G
6H
6J
6L
6M
6N
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