, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV42 SILICON NPN SWITCHING TRANSISTOR FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION INTERNAL SCHEMATIC DIAGRAM C<j(TAB) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Collector-emitter Voltage (VBE = -1.5V) VCEV Collector-emitter Voltage (!B = 0) VCEO Emitter-Base Voltage (Ic = 0) VEBO Collector Current Ic Collector Peak Current ICM Base Current IB Base Peak Current IBM Reverse Bias Base Dissipation PBase (B.E. junction in avalanche) Total Dissipation at Tcase < 25 °C Plot Storage Temperature Tstg Max Operating Junction Temperature T| Value Unit 350 V 250 V V 7 12 18 A A 2.5 4 1 A 120 -65 to 200 W °C 200 °C A A NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors THERMAL DATA Rthj-case Thermal Max Resistance Junction-case 1,46 °C/W ELECTRICAL CHARACTERISTICS (TcaSe = 25 °C unless otherwise specified) Symbol Test Conditions Parameter Collector Cut-off Current (RBE = 10£1) VCE = VCEV VCE = VCEV ICEV Collector Cut-off Current VCE = VCEV VCE = VCEV IEBO Emitter Cut-off Current (Ic = 0) VEB = 5 V ICER VcE(sat)* VBE(sat)* dio/dt* VcE(2us) VcE(4MS) Typ. T C =100°C VBE = -1.5V VBE = - 1.5VT C =100°C Max. Unit 0.5 2.5 mA mA 0.5 2 mA mA 1 mA lc = 0.2A L = 25 mH 250 V Emitter-base Voltage (lc = 0) IE = 50 mA 7 V Collector-Emitter Saturation Voltage lc lc lc IC lc IC = 2A = 4A = 6A = 2A = 4A = 6A IB = 0.13A IB = 0.4A IB = 0.75A IB = 0.13A IB = 0.4A IB = 0.75A lc lc lc lc = = = = IB = IB = IB = IB = VcEO(sus)* Collector-Emitter Sustaining Voltage VEBO Win. Base-Emitter Saturation Voltage 4A 6A 4A 6A 0.4A 0.75A 0.4A 0.75A TJ = 100°C TJ = 100°C Tj = 100°C 0.25 0.4 0.5 0.25 0.45 0.6 0.8 0.9 1.2 0.9 1.2 1.5 V V V V V V TJ = 100°C TJ = 100°C 1 1.1 0.9 1.1 1.3 1.5 1.3 1.5 V V V V Rated of Rise of on-state Collector Current VCC = 200V Collector Emitter Dynamic Voltage Vcc = 200V RC = 50£i IB1 = 0.4A TJ = 25°C TJ = 1 00°C 1.7 2.5 2.5 4 V V Collector Emitter Dynamic Voltage VCC = 200V Rc = 50H IB1 = 0.4A TJ = 25°C TJ = 100°C 0.9 1.1 1.7 2 V V > Pulsed: Pulse duration = 300 us, duty cycle = 2 % Rc = 0 IB1 = 0.6A TJ = 25°C TJ = 1 00°C 25 20 40 35 A/us A/us BUV42 ELECTRICAL CHARACTERISTICS (continued) Symbol tr ts tf ts tf tt tc ts tf tt to ts tf tt ts tf tt Parameter Test Conditions RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time Vcc = 200V VBB = -5V Rs2 = 3.3£i Ic = 6A IBI = 0.75A Tp = 30ns Vcc = 200V Ice = 4A VBB = -5V Lc = 2.5mH Vciamp = 250V IB = 0.4A R B 2 = 6.312 Storage Time Fall Time Tail Time in Turn-on Crossover Time VCC = 200V Ice = 4A VBB = -5V Lc = 2.5mH Vdamp = 250V IB = 0.4A RB2 = 6.3£i Tj = 100°C Storage Time Fall Time Tail Time in Turn-on Vcc = 200V Vclamp = 250V Ice = 4A VBB = 0 Lc = 2.5mH IB = 0.5A RB2 = 7.5fl Storage Time Fall Time Tail Time in Turn-on Vcc = 200V Ice = 4A VBB = 0 Lc = 2.5mH Vciamp = 250V IB = 0.4A R B 2 = 7.5H Tj = 100°C * Pulsed: Pulse duration = 300 u,s, duty cycle = 2 % Min. Typ. Max. Unit 0.3 1 0.4 1.6 0.3 us (is 1.8 0.2 (IS 0.15 1.2 0.08 0.03 0.15 1.8 0.2 0.08 0.4 0.12 0.35 2.4 0.4 0.2 0.7 (IS (is (is (IS (IS US (IS US 2.5 0.4 MS 0.15 (IS 4.8 0.7 0.4 (IS (IS (IS (IS BUV42 TO-3 (H) MECHANICAL DATA MIN. A B inch mm DIM. TYP. MAX. MIN. MAX. 0.460 11.7 0.96 TYP. 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P R 3.88 4.09 0.152 0.161 39.50 U V 1.031 26.2 30.10 1.555 1.185