General Purpose Silicon Rectifiers A1N4007G-G Voltage: 1000 V Current: 1.0 A RoHS Device DO-41 Features - Low drop down voltage 1.0(25.40) Min. - High current capability - Low reverse leakage. - High forward surge current capability. 0.205(5.20) 0.160(4.20) - Glass passivated chip junction. 0.107(2.70) 0.080(2.00) - Comply with AEC-Q101 1.0(25.40) Min. Mechanical data - Case: JEDEC DO-41 molded plastic 0.034(0.86) 0.028(0.70) - Epoxy: UL 94V-0 rate flame retardant - Terminals: Solderable per MIL-STD-750 method 2026. - Polarity: Color band denotes cathode end Dimensions in inches and (millimeter) Circuit diagram - Mounting position: Any - Weight: 0.34 grams(approx. ) Maximum Ratings and Electrical Characteristics (at Ta=25°C unless otherwise noted) Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol Value Unit Maximum recurrent peak reverse voltage VRRM 1000 V Maximum RMS voltage VRMS 700 V Maximum DC blocking voltage VDC 1000 V Parameter Conditions Maximum average forward rectified current see figure 1 I(AV) 1 A Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (JEDEC Method) TL=110°C IFSM 30 A Maximum instantaneous forward voltage @IF = 1A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25°C Typical junction Capacitance VR = 4V, f = 1MHz Typical thermal resistance Junction to ambient Operating junction temperature range Storage temperature range 5 μA IR 50 TA = 125°C CJ 10 pF RΘJA 45 °C/W TJ -55 ~ +125 °C TSTG -55 ~ +150 °C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-BG001 Page 1 Comchip Technology CO., LTD. General Purpose Silicon Rectifiers Rating and Characteristic Curves ( A1N4007G-G ) Fig.1 - Forward Current Derating Curve 100 Resistive or inductive load Peak Forward Surge Current, (A) Average Forward Current, (A) 1.2 Fig.2 - Maximum Non-Repetitive Peak Forward Surge Current 1.0 0.8 0.6 0.4 0.2 10 1 0 0 25 75 50 100 1 125 100 10 Lead Temperature, TL (°C) Number of Cycles at 60Hz Fig.3 - Typical Instantaneous Forward Characteristics Fig.4 - Typical Reverse Characteristics 100 10 Instantaneous Reverse Current, (μA) Instantaneous Forward Current, (A) 8.3mS single half sine-wave (JEDEC Method) 10 TJ=25°C 1.0 0.1 Pulse width=300μs. 1% duty cycle 0.01 0.4 TJ=125°C 1.0 0.1 TJ=25°C 0.01 0.001 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage, (V) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Typical Junction Capacitance Junction Capacitance, (pF) 100 10 1 0.01 0.1 1.0 10 100 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-BG001 Page 2 Comchip Technology CO., LTD. General Purpose Silicon Rectifiers Taping Specification For Axial Lead Diodes 90℃±5℃ Z A L L1 B H L2 T W DO-41 DO-41 SYMBOL A B Z T L1 L2 (mm) 5.00 ± 0.50 52.00 ± 0.50 1.20 (max) 6.00 ± 0.40 1.00 (max) 1.00 (max) (inch) 0.197 ± 0.020 2.047 ± 0.020 0.047 (max) 0.236 ± 0.016 0.039 (max) 0.039 (max) SYMBOL L W H (mm) 260.00 ± 10.00 75.00 ± 10.00 140.00 ± 10.00 (inch) 10.236 ± 0.394 2.953 ± 0.394 5.512 ± 0.394 Standard Packaging AMMO PACK Case Type DO-41 BOX CARTON ( pcs ) ( pcs ) 5,000 50,000 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-BG001 Page 3 Comchip Technology CO., LTD.