AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View Top View VDS 700V@150℃ ID (at VGS=10V) 1.3A RDS(ON) (at VGS=10V) < 9Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View TO251 Top View D Bottom View D D G S G D G AOI1N60 AOD1N60 G S S G D VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C D G AOU1N60 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage S S D S G Maximum 600 Units V ±30 V 1.3 ID 0.8 A IDM 4 Avalanche Current C IAR 1 A Repetitive avalanche energy C EAR 15 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 30 5 45 mJ V/ns W 0.36 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 5: Aug 2011 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 2.3 0.5 2.8 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD1N60/AOU1N60/AOI1N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.6 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V 100 Gate Threshold Voltage VDS=5V,ID=250µA 3 µA 4.1 4.5 nΑ V 9 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A 7.5 gFS Forward Transconductance VDS=40V, ID=0.65A 0.9 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current 1 A ISM Maximum Body-Diode Pulsed Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=1A S 105 130 160 pF 12 14.5 18 pF 1.5 1.8 2.2 pF 2.9 3.5 5.3 Ω 6.1 8 nC Qgs Gate Source Charge 1.3 2 nC Qgd Gate Drain Charge 3.1 4 nC tD(on) Turn-On DelayTime 10 13 ns tr Turn-On Rise Time 6.7 13 ns tD(off) Turn-Off DelayTime 20 26 ns tf trr Turn-Off Fall Time 11.5 23 ns IF=1.3A,dI/dt=100A/µs,VDS=100V 114 137 Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V 0.63 0.76 ns µC Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=1A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Aug 2011 www.aosmd.com Page 2 of 6 AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 10 10V -55°C VDS=40V 6.5V 1 ID(A) ID (A) 1.5 6V 125°C 1 0.5 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 14.0 Normalized On-Resistance 13.0 12.0 RDS(ON) (Ω Ω) 4 VGS=10V 11.0 10.0 9.0 8.0 7.0 VGS=10V ID=0.5A 2 1.5 1 0.5 0 0 0.5 1 1.5 2 -100 2.5 1.2 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 1.0E+00 40 1.1 125°C 1.0E-01 1 25°C IS (A) BVDSS (Normalized) ID=30A 125° 1.0E-02 0.9 1.0E-03 25° 0.8 1.0E-04 -100 Rev 5: Aug 2011 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=1A 12 9 6 100 Coss 10 Crss 3 1 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 8 10 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10µs 100µs ID (Amps) RDS(ON) limited 1ms 10ms 0.1s 0.1 TJ(Max)=150°C TC=25°C DC TJ(Max)=150°C TC=25°C 600 Power (W) 1 400 200 0.01 0 1 10 100 1000 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.8C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Aug 2011 www.aosmd.com Page 4 of 6 AOD1N60/AOU1N60/AOI1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 50 1.2 Current rating ID(A) Power Dissipation (W) 60 40 30 20 0.9 0.6 0.3 10 0 0.0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 400 TJ(Max)=150°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev 5: Aug 2011 www.aosmd.com Page 5 of 6 AOD1N60/AOU1N60/AOI1N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 5: Aug 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6