Panasonic AN77L05M 3-pin, positive output, low dropout voltage regulator (100 ma type) limit circuit Datasheet

Voltage Regulators
AN77Lxx/AN77LxxM Series
3-pin, positive output, low dropout voltage regulator (100 mA type)
■ Overview
AN77Lxx series
5.1±0.2
(1.0)
4.0±0.2
(1.0)
2.3±0.2
13.5±0.5
0.6±0.15
■ Features
0.43+0.1
–0.05
0.43+0.1
–0.05
2.54
1 : Input
2 : Output
3 : Common
2 3 1
SSIP003-P-0000
AN77LxxM series
Unit: mm
1.6 max.
4.6 max.
2.6 max.
1.5
1.5
0.8 min.
0.58 max.
0.48 max.
4.25 max.
1.8 max.
2.6 typ.
• Minimum input/output voltage difference:
0.22V typ. (3V type)
• Built-in overcurrent limit circuit
• Built-in rush current prevention circuit at input voltage
rise
• Built-in overheat protection circuit
• Built-in input short-circuit protection circuit
• Output voltage: 3V, 3.5V, 4V, 4.5V, 5V, 6V, 7V, 8V, 9V,
10V, 12V
Unit: mm
5.0±0.2
The AN77Lxx series and the AN77LxxM series are
stabilized constant voltage power supplies with a low input/output voltage difference (0.22V typ. for AN77L03).
It is suitable for the low-voltage equipment using batteries and consumer/industrial equipment with great fluctuation of the supply voltage.
0.44 max.
3.0
3
2
1
1 : Output
2 : Common
3 : Input
HSIP003-P-0000B
Note) The packages (SSIP003-P-0000 and HSIP003P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package dimensions section later of this datasheet.
Publication date: October 2002
SFF00004CEB
1
AN77Lxx/AN77LxxM Series
■ Block Diagram (AN77LxxM series)
Over Current
Protection
Over Current
Protection
Voltage
Reference
Starter
Input Short Circuit
Protection
Error Amp.
+
Rush Current
Protection
−
Thermal
Protection
3
IN
(1)
2
GND
(3)
1
OUT
(2)
Note) The number in ( ) shows the pin number for the AN77Lxx series.
■ Absolute Maximum Ratings at Ta = 25°C
Parameter
*
Symbol
Rating
Supply voltage
VIN
30
V
Supply current
IIN
200
mA
mW
Power dissipation *
PD
650
Operating ambient temperature
Topr
−30 to +85
°C
Storage temperature
Tstg
−55 to +150
°C
HSIP003-P-0000B is mounted on a standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more).
■ Recommended Operating Range at Ta = 25°C
Part No.
Output voltage (VO)
Operation supply voltage range (VI)
AN77L03, AN77L03M
AN77L035, AN77L035M
Unit
3
VO +0.3 to 13.62
V
3.5
VO +0.41 to 14.14
V
4
VO +0.3 to 14.66
V
4.5
VO +0.43 to 15.18
V
AN77L05, AN77L05M
5
VO +0.3 to 15.7
V
AN77L06, AN77L06M
6
VO +0.46 to 16.74
V
AN77L07, AN77L07M
7
VO +0.48 to 17.78
V
AN77L08, AN77L08M
8
VO +0.51 to 18.82
V
AN77L09, AN77L09M
9
VO +0.53 to 19.86
V
AN77L10, AN77L10M
10
VO +0.55 to 20.9
V
AN77L12, AN77L12M
12
VO +0.6 to 22.98
V
AN77L04, AN77L04M
AN77L045, AN77L045M
2
Unit
SFF00004CEB
AN77Lxx/AN77LxxM Series
■ Electrical Characteristics at Ta = 25°C
• AN77L03, AN77L03M (3V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
2.88
VI = 3.62 to 13.62V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
Max
Unit
3
3.12
V
2
60
mV
8
60
mV
0.9
1.5
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 2.7V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 3.62 to 5.62V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 2.7V, IO = 50mA, Tj = 25°C
0.12
0.25
V
Minimum input/output voltage difference 2
VDIF(min)2
VI = 2.7V, IO = 100mA, Tj = 25°C
0.22
0.3
V
Output noise voltage
Output voltage temperature coefficient
IO = 0 to 100mA, Tj = 25°C
Typ
60
70
dB
Vno
f = 10Hz to 100kHz
70
µV
∆VO/Ta
Tj = −30 to +125°C
0.2
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4V, IO = 50mA and CO = 10µF
• AN77L035, AN77L035M (3.5V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
3.36
VI = 4.14 to 14.14V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
Bias current fluctuation to load
∆IBias
IO = 0 to 100mA, Tj = 25°C
Bias current before regulation start
Irush
VI = 3.15V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 4.14 to 6.14V, f = 120Hz
59
Typ
Max
3.64
V
3
60
mV
9
60
mV
0.9
1.5
mA
3
5
mA
1.5
5
mA
69
dB
Minimum input/output voltage difference 1
VDIF(min)1
VI = 3.15V, IO = 50mA, Tj = 25°C
0.12
0.25
Minimum input/output voltage difference 2
VDIF(min)2
VI = 3.15V, IO = 100mA, Tj = 25°C
0.22
0.41
Output noise voltage
Output voltage temperature coefficient
Unit
3.5
V
V
Vno
f = 10Hz to 100kHz
75
µV
∆VO/Ta
Tj = −30 to +125°C
0.23
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 4.5V, IO = 50mA and CO = 10µF
• AN77L04, AN77L04M (4V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
3.84
Typ
Max
4.16
V
VI = 4.66 to 14.66V, Tj = 25°C
3
60
mV
IO = 0 to 100mA, Tj = 25°C
9
60
mV
0.9
1.5
mA
3
5
mA
1.5
5
mA
IO = 0mA, Tj = 25°C
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 3.6V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 4.66 to 6.66V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 3.6V, IO = 50mA, Tj = 25°C
0.12
0.25
Minimum input/output voltage difference 2
VDIF(min)2
VI = 3.6V, IO = 100mA, Tj = 25°C
0.23
0.3
Output noise voltage
Output voltage temperature coefficient
Unit
4
IO = 0 to 100mA, Tj = 25°C
59
69
dB
V
V
Vno
f = 10Hz to 100kHz
80
µV
∆VO/Ta
Tj = −30 to +125°C
0.26
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5V, IO = 50mA and CO = 10µF
SFF00004CEB
3
AN77Lxx/AN77LxxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN77L045, AN77L045M (4.5V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
4.32
VI = 5.18 to 15.18V, Tj = 25°C
Typ
Max
Unit
4.5
4.68
V
3
60
mV
IO = 0 to 100mA, Tj = 25°C
10
60
mV
IO = 0mA, Tj = 25°C
0.9
1.5
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 4.05V, IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 7.18 to 6.18V, f = 120Hz
58
68
dB
Minimum input/output voltage difference 1
VDIF(min)1
VI = 4.05V, IO = 50mA, Tj = 25°C
0.12
0.25
V
Minimum input/output voltage difference 2
VDIF(min)2
VI = 4.05V, IO = 100mA, Tj = 25°C
0.23
0.43
V
Output noise voltage
Output voltage temperature coefficient
Vno
f = 10Hz to 100kHz
85
µV
∆VO/Ta
Tj = −30 to +125°C
0.3
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5.5V, IO = 50mA and CO = 10µF
• AN77L05, AN77L05M (5V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
4.8
VI = 5.7 to 15.7V, Tj = 25°C
Typ
Max
5.2
V
4
60
mV
IO = 0 to 100mA, Tj = 25°C
10
60
mV
IO = 0mA, Tj = 25°C
0.9
1.5
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 4.5V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 5.7 to 7.7V, f = 120Hz
IO = 0 to 100mA, Tj = 25°C
58
68
dB
Minimum input/output voltage difference 1
VDIF(min)1
VI = 4.5V, IO = 50mA, Tj = 25°C
0.12
0.25
Minimum input/output voltage difference 2
VDIF(min)2
VI = 4.5V, IO = 100mA, Tj = 25°C
0.24
0.3
Output noise voltage
Output voltage temperature coefficient
Unit
5
V
V
Vno
f = 10Hz to 100kHz
90
µV
∆VO/Ta
Tj = −30 to +125°C
0.33
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 6V, IO = 50mA and CO = 10µF
• AN77L06, AN77L06M (6V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
5.76
VI = 6.74 to 16.74V, Tj = 25°C
Typ
Max
Unit
6
6.24
V
4
60
mV
IO = 0 to 100mA, Tj = 25°C
11
60
mV
IO = 0mA, Tj = 25°C
0.9
1.5
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 5.4V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 6.74 to 8.74V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 5.4V, IO = 50mA, Tj = 25°C
0.12
0.25
V
Minimum input/output voltage difference 2
VDIF(min)2
VI = 5.4V, IO = 100mA, Tj = 25°C
0.25
0.46
V
Vno
f = 10Hz to 100kHz
105
µV
∆VO/Ta
Tj = −30 to +125°C
0.4
mV/°C
Output noise voltage
Output voltage temperature coefficient
IO = 0 to 100mA, Tj = 25°C
56
dB
66
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 7V, IO = 50mA and CO = 10µF
4
SFF00004CEB
AN77Lxx/AN77LxxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN77L07, AN77L07M (7V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
6.72
VI = 7.78 to 17.78V, Tj = 25°C
Typ
Max
Unit
7.0
7.28
V
5
70
mV
IO = 0 to 100mA, Tj = 25°C
11
70
mV
IO = 0mA, Tj = 25°C
1.1
1.6
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 6.3V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 7.78 to 9.78V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 6.3V, IO = 50mA, Tj = 25°C
0.12
0.25
V
Minimum input/output voltage difference 2
VDIF(min)2
VI = 6.3V, IO = 100mA, Tj = 25°C
0.26
0.48
V
Output noise voltage
Output voltage temperature coefficient
IO = 0 to 100mA, Tj = 25°C
55
65
dB
Vno
f = 10Hz to 100kHz
120
µV
∆VO/Ta
Tj = −30 to +125°C
0.46
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 8V, IO = 50mA and CO = 10µF
• AN77L08, AN77L08M (8V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
7.68
VI = 8.82 to 18.82V, Tj = 25°C
Typ
Max
Unit
8
8.32
V
5
80
mV
IO = 0 to 100mA, Tj = 25°C
12
80
mV
IO = 0mA, Tj = 25°C
1.1
1.6
mA
3
5
mA
1.5
5
mA
Bias current fluctuation to load
∆IBias
IO = 0 to 100mA, Tj = 25°C
Bias current before regulation start
Irush
VI = 7.2V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 8.82 to 10.82V, f = 120Hz
53
63
dB
Minimum input/output voltage difference 1
VDIF(min)1
VI = 7.2V, IO = 50mA, Tj = 25°C
0.12
0.25
Minimum input/output voltage difference 2
VDIF(min)2
VI = 7.2V, IO = 100mA, Tj = 25°C
0.27
0.51
Vno
f = 10Hz to 100kHz
135
µV
∆VO/Ta
Tj = −30 to +125°C
0.53
mV/°C
Output noise voltage
Output voltage temperature coefficient
V
V
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9V, IO = 50mA and CO = 10µF
• AN77L09, AN77L09M (9V, 100mA type)
Parameter
Symbol
Conditions
Tj = 25°C
V
mV
IO = 0 to 100mA, Tj = 25°C
13
90
mV
IO = 0mA, Tj = 25°C
1.2
1.7
mA
3
5
mA
1.5
5
mA
VI = 9.86 to 19.86V, Tj = 25°C
Load regulation
REGL
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 8.1V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 9.86 to 11.86V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 8.1V, IO = 50mA, Tj = 25°C
0.13
0.25
Minimum input/output voltage difference 2
VDIF(min)2
0.53
Output noise voltage
Output voltage temperature coefficient
Unit
90
REGIN
IBias
Max
6
Line regulation
8.64
Typ
9.36
VO
Bias current under no load
Min
9
Output voltage
IO = 0 to 100mA, Tj = 25°C
52
62
dB
V
VI = 8.1V, IO = 100mA, Tj = 25°C
0.28
Vno
f = 10Hz to 100kHz
150
µV
∆VO/Ta
Tj = −30 to +125°C
0.6
mV/°C
V
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 10V, IO = 50mA and CO = 10µF
SFF00004CEB
5
AN77Lxx/AN77LxxM Series
■ Electrical Characteristics at Ta = 25°C (continued)
• AN77L10, AN77L10M (10V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
9.6
Typ
Max
Unit
10
10.4
V
7
100
mV
IO = 0 to 100mA, Tj = 25°C
14
100
mV
IO = 0mA, Tj = 25°C
1.2
1.7
mA
3
5
mA
1.5
5
mA
VI = 10.9 to 20.9V, Tj = 25°C
Bias current fluctuation to load
∆IBias
Bias current before regulation start
Irush
VI = 9.0V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 10.9 to 12.9V, f = 120Hz
Minimum input/output voltage difference 1
VDIF(min)1
VI = 9.0V, IO = 50mA, Tj = 25°C
0.13
0.25
V
Minimum input/output voltage difference 2
VDIF(min)2
VI = 9.0V, IO = 100mA, Tj = 25°C
0.29
0.55
V
Output noise voltage
Output voltage temperature coefficient
IO = 0 to 100mA, Tj = 25°C
50
60
dB
Vno
f = 10Hz to 100kHz
165
µV
∆VO/Ta
Tj = −30 to +125°C
0.67
mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 11V, IO = 50mA and CO = 10µF
• AN77L12, AN77L12M (12V, 100mA type)
Parameter
Symbol
Output voltage
VO
Line regulation
REGIN
Load regulation
REGL
Bias current under no load
IBias
Conditions
Tj = 25°C
Min
11.52
Typ
Max
Unit
12
12.48
V
8
120
mV
IO = 0 to 100mA, Tj = 25°Cv
15
120
mV
IO = 0mA, Tj = 25°C
1.4
1.9
mA
3
5
mA
1.5
5
mA
VI = 12.98 to 22.98V, Tj = 25°C
Bias current fluctuation to load
∆IBias
IO = 0 to 100mA, Tj = 25°C
Bias current before regulation start
Irush
VI = 10.8V, IO = 0mA, Tj = 25°C
Ripple rejection ratio
RR
VI = 12.98 to 14.98V, f = 120Hz
48
58
dB
Minimum input/output voltage difference 1
VDIF(min)1
VI = 10.8V, IO = 50mA, Tj = 25°C
0.13
0.25
Minimum input/output voltage difference 2
VDIF(min)2
VI = 10.8V, IO = 100mA, Tj = 25°C
0.31
0.6
Vno
f = 10Hz to 100kHz
190
µV
∆VO/Ta
Tj = −30 to +125°C
0.8
mV/°C
Output noise voltage
Output voltage temperature coefficient
V
V
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 13V, IO = 50mA and CO = 10µF
6
SFF00004CEB
AN77Lxx/AN77LxxM Series
■ Main Characteristics
Input/output characteristic
VO  VI
Line regulation
VO  VI
Rush current (under no load)
II  VI
3
AN77L03/M
IO = 50mA
AN77L03/M
IO = 50mA
AN77L03/M
IO = 0A
4
3
2
3.02
Input current II (mA)
Output voltage VO (V)
Output voltage VO (V)
5
3.01
3.00
2.99
2
1
1
2.98
0
0
1
2
3
4
0
5
0
10
20
2
3
4
5
Input voltage VI (V)
Bias current
IBias  IO
Load regulation
VO  IO
Overcurrent limit characteristic
VO  IO
AN77L03/M
VI = 4V
3
2
1
Output voltage VO (V)
4
3.01
3.00
2.99
2.98
50
0
100
AN77L03/M
VI = 4V
IO (short) = 200mA
(typ.)
5
3.02
Output voltage VO (V)
Bias current IBias (mA)
1
Input voltage VI (V)
5
1
0
Input voltage VI (V)
AN77L03/M
VI = 4V
0
0
30
4
3
2
1
0
50
0
100
0
100
200
300
Output current IO (mA)
Output current IO (mA)
Minimum input/output voltage difference
VDIF(min)  IOUT
Ripple rejection ratio
RR  f
Output voltage temperature characteristic
VO  Ta
100
AN77L03/M
VI = 2.88V
0.4
0.3
0.2
0.1
0
0
50
Output current IO (mA)
100
AN77L03/M
IO = 50mA
60
40
AN77L03/M
VI = 4V
IO = 0mA
3.10
80
Output voltage VO (V)
0.5
Ripple rejection ratio RR ( dB)
Minimum input/output voltage difference VDIF(min) (V)
Output current IO (mA)
3.00
20
0
10
100
1k
10k
Frequency f (Hz)
SFF00004CEB
100k
2.90
−25
0
25
50
75
Ambient temperature Ta (°C)
7
AN77Lxx/AN77LxxM Series
■ Main Characteristics (continued)
Power dissipation
PD  Ta (AN77Lxx series)
Power dissipation
PD  Ta (AN77LxxM series)
1.0
Independent IC
without a heat sink
Rth(j-a) = 190°C/W
PD = 658mW (25°C)
0.5
0
0
25
50
75 85 100
125
Ambient temperature Ta (°C)
150
Power dissipation PD (W)
Power dissipation PD (W)
1.0
Mounted on standard board
(glass epoxy: 20 mm × 20 mm × t1.7mm
with Cu foil of 1cm2 or more)
0.5
0
0
25
50
75 85 100
125
150
Ambient temperature Ta (°C)
■ Usage Notes
Not required
(1) 3
VI
1 (2)
+
− CO
10µF
2
CI
0.33µF
VO
(3)
Note) The number in ( ) shows the pin number for the
AN77Lxx series.
50
;
;; ;;
;; ;;
2. Short-circuit between the output pin and the GND pin
Because there is no in-built protection circuit in the AN77Lxx/
AN77LxxM series, they have the drooping characteristics as
shown in the "■ Main Characteristics, Overcurrent limit characteristics". When your use under a high voltage happens to
cause any short-circuit between the output pin (pin 1) and the
GND pin (pin 2), the IC is likely to be broken.
(AN77LxxM series)
Equivalent series resistance ESR (Ω)
1. Input short-circuit protection circuit
For the conventional Matsushita 3-pin regulators (such as of
the AN80xx series), when DC input pin (pin 3) is short-circuited with GND pin (pin 2) in the normal operation condition,
the potential of output pin (pin 1) becomes higher than that of
DC input pin and the electric charges which is charged in output capacitor CO flows in the input side, having resulted in the
breakage of elements.
In the above case, the common silicon diode is connected
as shown in the right figure (the dotted line). However, for the
AN77Lxx/AN77LxxM series, since the protection circuit, which
protects the elements from the discharging current, is incorporated in the internal circuit, the protection diode is not required.
3. Capacitor for external compensation
In order to secure the stability, the capacitor of 10µF is
required in the output side and it should be added as near to
output pin (pin 1) and GND pin (pin 2) as possible. When it is
used under low temperature, oscillation may occur due to the
decrease of the aluminum electrolytic capacitor's capacitance
and an increase of ESR.
For the AN77Lxx/AN77LxxM series, it is recommended that
the tantalum capacitor or aluminum electrolytic capacitor whose
equivalent serial resistance with temperature characteristics within
the recommended range specified in the right figure should be used.
8
SFF00004CEB
40
30
20
Recommended range
10
0
20
40
60
80
Output current IO (mA)
100
AN77Lxx/AN77LxxM Series
■ Application Circuit Example
VI
VO
AN77Lxx/
AN77LxxM
series
+
0.33µF
−
10µF
• For the AN77Lxx/AN77LxxM series, the gain inside the IC is set high to improve the performance. For the reason,
use the capacitor of 10µF or more when the power line in the output side is long.
In addition, install the capacitor in the output side as near as possible to the IC.
■ New Package Dimensions (Unit: mm)
• SSIP003-P-0000S (Lead-free package)
4.00±0.20
(1.00)
(1.00)
5.00±0.20
5.00±0.20
0.60±0.15
1
1.27
2.30±0.20
0.40+0.10
-0.05
13.30±0.50
0.40±0.10
3
1.27
• HSIP003-P-0000Q (Lead-free package)
1.00+0.10
-0.20
2.50±0.10
1
0.40+0.10
-0.05
1.50
3
0.40+0.10
-0.05
0.50+0.10
-0.05
0.15 M
0.42+0.10
-0.05
(0.75)
1.50±0.10
3.00
2.65±0.10
0.10
(0.40)
4.00+0.25
-0.20
4.50±0.10
1.55±0.20
SFF00004CEB
9
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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