IRF IRL5Y7413CM Simple drive requirement Datasheet

PD - 94164A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y7413CM
30V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRL5Y7413CM
30V
RDS(on)
0.025Ω
ID
18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18*
18*
72
75
0.6
±16
230
18
7.5
2.7
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
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1
08/07/01
IRL5Y7413CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
30
—
—
V
VGS = 0V, ID = 250µA
—
0.03
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
1.0
30
—
—
—
—
—
—
—
—
0.025
0.030
—
—
25
250
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
79
9.0
23
20
130
52
46
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1670
660
80
—
—
—
VGS = 10V, ID = 18A ➃
VGS = 4.5V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 18A ➃
VDS = 30V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ =125°C
VGS = 16V
VGS = -16V
VGS =10V, ID = 18A
VDS = 24V
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 15V, ID = 18A,
VGS =10V, RG = 6.2Ω
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
18*
72
1.5
110
300
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL5Y7413CM
100
VGS
TOP
15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
1
2.7V
20µs PULSE WIDTH
Tj = 25°C
VGS
15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
2.7V
20µs PULSE WIDTH
Tj = 150°C
0.1
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
15
V DS = 15V
20µs PULSE WIDTH
4.0
4.5
5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
3.5
100
Fig 2. Typical Output Characteristics
100
3.0
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
2.5
1
ID = 18A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL5Y7413CM
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2000
Ciss
1500
C oss
1000
500
Crss
0
1
10
ID = 18A
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
10
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100
TJ = 150 ° C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.8
1.2
1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 24V
VDS = 15V
VDS = 6V
16
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2500
20
VGS , Gate-to-Source Voltage (V)
3000
2.0
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL5Y7413CM
50
RD
VDS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
40
D.U.T.
RG
+
-VDD
30
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5Y7413CM
15V
L
VDS
D .U .T.
RG
IA S
VGS
20V
D R IV E R
+
- VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
600
ID
8.0A
11.4A
BOTTOM 18A
TOP
500
400
300
200
100
0
25
V (B R )D S S
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL5Y7413CM
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 18A, di/dt ≤ 140 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 1.4mH
Peak IAS = 18A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 30V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
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Data and specifications subject to change without notice. 08/01
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