ON NTD5804NT4G Power mosfet 40 v, 69 a, single n−channel, dpak Datasheet

NTD5804N
Power MOSFET
40 V, 69 A, Single N−Channel, DPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
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Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Steady
State
Pulsed Drain Current
ID
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
S
N−CHANNEL MOSFET
4
4
1 2
71
W
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
IDM
125
A
TJ, Tstg
−55 to
175
°C
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
IS
30
A
EAS
195
mJ
MARKING DIAGRAMS
& PIN ASSIGNMENT
°C
4
Drain
TL
260
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
G
A
69
49
PD
69 A
8.5 mW @ 10 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
12 mW @ 5.0 V
40 V
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
ID MAX
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
106
2
1 Drain 3
Gate Source
Y
WW
5804N
G
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
4
Drain
YWW
58
04NG
•
•
•
•
RDS(on) MAX
V(BR)DSS
Applications
YWW
58
04NG
•
•
•
•
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 0
1
Publication Order Number:
NTD5804N/D
NTD5804N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
45
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
41
mV/°C
Parameter
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.5
7.3
gFS
mV/°C
VGS = 10 V, ID = 30 A
5.7
8.5
VGS = 5 V, ID = 10 A
7.9
12
VDS = 15 V, ID = 15 A
12
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
2460
2850
310
400
215
280
nC
45
VGS = 10 V, VDS = 32 V,
ID = 30 A
pF
2.8
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
12.6
10
td(on)
11.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 32 V,
ID = 30 A, RG = 2.5 W
tf
ns
18.7
26.8
5.9
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.81
TJ = 150°C
0.63
tRR
ta
tb
21.7
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
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2
V
ns
11.9
9.8
11.8
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTD5804N
TYPICAL CHARACTERISTICS
100
ID, DRAIN CURRENT (A)
4.5 V
70
60
50
40
4.0 V
30
20
75
50
TJ = 100°C
25
TJ = 25°C
3.5 V
0
0.5
1
1.5
2
2.5
0
3
4
5
6
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.019
0.017
0.015
0.013
0.011
0.009
0.007
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.05
TJ = 25°C
0.04
0.03
VGS = 5 V
0.02
0.01
VGS = 10 V
0
10
20
30
40
50
60
70
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.9
VGS = 0 V
ID = 69 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
1.8
1.7
1.6
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.021
0.005
TJ = −55°C
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
80
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
100
TJ = 25°C
10 V
90
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
25
50
75
100
125
150
1000
10
175
TJ = 100°C
100
2
12
22
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
42
NTD5804N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
5000
4000
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
VGS = 0 V
TJ = 25°C
45
QT
10
Ciss
3000
2000
Coss
1000
0
10
5
Vgs
Crss
0
5
10
Vds
15
20
25
30
35
40
VGS
Qgs
0
15
15
0
30
0
45
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
30
VDD = 32 V
ID = 30 A
VGS = 10 V
td(off)
tf
tr
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
ID = 30 A
TJ = 25°C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
td(on)
10
1
30
VDS
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
6000
1
10
VGS = 0 V
TJ = 25°C
20
10
0
100
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.0
ORDERING INFORMATION
Order Number
NTD5804NG
NTD5804NT4G
Package
Shipping†
DPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTD5804N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD5804N
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD5804N/D