HANBit HMF2M32M4VGL Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design Part No. HMF2M32M4VGL GENERAL DESCRIPTION The HMF2M32M4VGL is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8 bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.3V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES w Access time : 70, 80, 90, 120ns PIN Symbol PIN Symbol PIN Symbol w High-density 8MByte design 1 Vss 25 DQ17 49 /BANKE0 w High-reliability, low-power design 2 NC 26 DQ18 50 A3 w Single + 3.3V ± 0.3V power supply 3 DQ0 27 DQ19 51 A4 w Easy memory expansion 4 DQ1 28 DQ20 52 A5 w All inputs and outputs are TTL-compatible 5 DQ2 29 DQ21 53 A6 6 DQ3 30 Vcc 54 A7 7 DQ4 31 DQ22 55 A8 32 DQ23 56 A9 w FR4-PCB design w Low profile 72-pin SIMM 8 DQ5 w Minimum 1,000,000 write/erase cycle 9 DQ6 33 /WE2 57 A10 w Sectors erase architecture 10 Vcc 34 NC 58 A11 w Sector group protection 11 DQ7 35 DQ24 59 Vcc w Temporary sector group unprotection 12 /WE0 36 DQ25 60 A12 13 /RY_BY 37 DQ26 61 A13 14 DQ8 38 DQ27 62 A14 15 DQ9 39 Vss 63 A15 16 DQ10 40 DQ28 64 A16 OPTIONS MARKING w Timing 70ns access -70 17 DQ11 41 DQ29 65 A17 80ns access -80 18 DQ12 42 DQ30 66 A18 90ns access -90 19 DQ13 43 DQ31 67 A19 120ns access -120 20 DQ14 44 /WE3 68 A20 21 DQ15 45 NC 69 A0 22 /WE1 46 /RESET 70 A1 23 NC 47 A2 71 NC 24 DQ16 48 /OE 72 Vss w Packages 72-pin SIMM URL : www.hbe.co.kr REV,02(August,2002) M 1 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL FUNCTIONAL BLOCK DIAGRAM 32 DQ0 - DQ31 20 A0 – A19 A0-19 DQ 0-7 /WE /WE0 U1 /OE /CE RY-BY /Reset A0-20 DQ 8-15 /WE /WE1 U2 /OE /CE RY-BY /Reset A0-20 DQ16-23 /WE2 /WE U3 /OE /CE RY-BY /Reset A0-20 DQ24-31 /WE3 /WE /OE /OE /BANK-E0 /CE RY-BY /RY_BY /Reset /Reset URL : www.hbe.co.kr REV,02(August,2002) U4 2 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device . This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 2.7V Ground VSS 0 TYP. MAX 3.6V 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBO L MIN TYP MAX UNI T Input Load Current Vcc=Vcc max, V IN= Vss to Vcc IL1 ±1.0 µA A9 Input Loda Current Vcc=Vcc max, ; A9=12.5 V IL1T 35 µA Output Leakage Current Vcc=Vcc max, V OUT= Vss to Vcc IL0 ±1.0 µA /CE= VIL, /OE= VIH, 5MHz Byte Mode 1MHz Vcc Active Read Current (1) 9 16 2 4 ICC1 /CE= VIL, /OE= VIH, 5MHz 9 16 Word Mode 1MHz 2 4 µA Vcc Active Write Current /CE = VIL, /OE=VIH ICC2 20 30 mA /CE, /RESET=Vcc±0.3V ICC3 0.2 5 mA (Note2,3,4) Vcc Standby Current(Note2) URL : www.hbe.co.kr REV,02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL Vcc Standby Current During /RESET=Vss±0.3V ICC4 0.2 5 mA VCC5 0.2 5 V -0.5 0.8 V 0.7×Vc Vcc+0 Reset(Note2) Automatic Sleep Mode(Note2,5) VIH= Vcc ±0.3V; VIL= Vss ±0.3V; Input Low Voltage VIL Input High Voltage VIH V .3 c Voltage for Autoselect and VCC = 3.3V VID IOL = 4.0mA, Vcc =Vcc min VOL 11.5 12.5 V 0.45 V Temporary Sector Unprotect Output Low Voltage 0.85×Vc IOH = -2.0mA, Vcc =Vcc min V Output High Voltage c IOH = -100µA, Vcc =Vcc min Vcc-0.4 Low Vcc Lock-Out Voltage(Note VLKO 2.3 2.5 V 4) Notes 1. The Icc Current listed is typically less than 2 ma/MHz,with /OE at VIH. Typical Vcc is 3.0V. 2. Maximum Icc Specifications are tested with Vcc=Vccmax. 3. Icc active while Embedded Erase of Embedded Program is in progress . ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Sector Erase Time - Chip Erase Time TYP. MAX. 0.7 15 25 COMMENTS sec Excludes 00H programming prior to erasure sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF o Notes : Test conditions TA = 25 C, f=1.0 MHz. URL : www.hbe.co.kr REV,02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS Speed Options DESCRIPTION TEST SETUP UNIT JEDEC STANDARD tAVAV tRC Read Cycle Time (Note 1) -70R -80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns tAVQV tACC Address to Output Delay /CE = V IL /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 30 30 35 35 ns tEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns tGHQZ tDF Output Enable to Output High-Z Max 25 25 30 30 ns Read Min 0 Hold Time(Note 1) Min 10 /Data Polling Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 Output Enable ns Toggle and tAXQX tQH Notes : 1. Not 100% tested. 2. See Figure 5 and Table 10 for test specifications. ns TEST SPECIFICATIONS TEST CONDITION 70R, 80 Output load 90, 120 UNIT 100 pF 1TTL gate Output load capacitance,CL (Including jig capacitance) 30 Input rise and fall times 5 ns 0.0-3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL : www.hbe.co.kr REV,02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVWH tDS Data Setup Time Min 35 35 45 50 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 ns tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 tWHWH1 tWHWH1 tWHWH2 70R 80 90 120 70 80 90 120 0 35 35 ns ns 35 50 ns ns Byte Programming Byte Typ 9 Operation Word Typ 11 Sector Erase Operation (Note1) Typ 0.7 sec tVCS Vcc set up time Min 50 µs tRB Recovery Time from RY//BY Min 0 ns Min 90 ns tWHWH2 µs Program/Erase Valid to RY//BY tBUSY Delay Notes : 1. Not 100% tested. 2. See the “Erase and Programming Performance ” section for more information. URL : www.hbe.co.kr REV,02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 45 50 ns tDVEH tDS Data Setup Time Min 35 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS /WE Setup Time Min 0 ns tEHEH tWH /WE Hold Time Min 0 ns tELEH tCP /CE Pulse Width Min TEHEL tCPH /CE Pulse Width High Min 30 ns tWHWH1 tWHWH1 µs tWHWH2 tWHWH2 -70R -80 -90 120 70 80 90 120 0 35 35 Byte Typ 9 Operation Word Typ 11 Typ 0.7 Sector Erase Operation ns 35 Byte Programming 50 Notes : 1. Not 100% tested. 2. See the “Erase and Programming Performance ”section for more information. URL : www.hbe.co.kr REV,02(August,2002) 7 ns HANBit Electronics Co., Ltd. ns sec HANBit HMF2M32M4VGL u READ OPERATIONS TIMING u RESET TIMING URL : www.hbe.co.kr REV,02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL : www.hbe.co.kr REV,02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL : www.hbe.co.kr REV,02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL : www.hbe.co.kr REV,02(August,2002) 11 HANBit Electronics Co., Ltd. HANBit HMF2M32M4VGL PACKAGE DIMENSIONS 2.54 mm 0.25 mm MAX MIN 1.27±0.08 mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF2M32M4VGL-70 8MByte 2Mx 32Bit 72Pin -SIMM HMF2M32M4VGL-80 8MByte 2Mx 32Bit HMF2M32M4VGL-90 8MByte HMF2M32M4VGL-120 8MByte URL : www.hbe.co.kr REV,02(August,2002) Component Vcc SPEED 4EA 3.3V 70ns 72Pin -SIMM 4EA 3.3V 80ns 2Mx 32Bit 72Pin -SIMM 4EA 3.3V 90ns 2Mx 32Bit 72Pin -SIMM 4EA 3.3V 120ns 12 Number HANBit Electronics Co., Ltd.