HMC564 v00.0206 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC564 is ideal for use as a LNA or driver amplifier for: Noise Figure: 1.8 dB • Point-to-Point Radios OIP3: 24 dBm • Point-to-Multi-Point Radios Single Supply: +3V @ 51 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military & Space Small Size: 1.96 x 0.98 x 0.10 mm Functional Diagram General Description Gain: 17 dB The HMC564 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 7 to 13.5 GHz. The HMC564 features extremely flat performance characteristics including 17 dB of small signal gain, 1.8 dB of noise figure and output IP3 of 24 dBm across the operating band. This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd 1, 2 = +3V Parameter Min. Frequency Range Gain 14 Gain Variation Over Temperature Noise Figure Max. Units GHz 17 dB 0.02 0.03 dB/ °C 1.8 2.2 dB Input Return Loss 15 dB Output Return Loss 16 dB Output Power for 1 dB Compression (P1dB) 12 dBm 14.5 dBm Output Third Order Intercept (IP3) 24 dBm Supply Current (Idd)(Vdd = +3V) 51 mA Saturated Output Power (Psat) 1 - 78 Typ. 7 - 13.5 9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC564 v00.0206 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz 1 Gain vs. Temperature 25 25 20 20 10 5 GAIN (dB) RESPONSE (dB) 15 S21 S11 S22 0 -5 15 10 -10 +25C +85C -55C 5 -15 -20 -25 0 6 7 8 9 10 11 12 13 6 14 7 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 11 12 13 14 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 10 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 6 7 8 9 10 11 12 13 14 6 7 8 FREQUENCY (GHz) 9 10 11 12 13 14 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 6 5 -10 +25C +85C -55C 4 ISOLATION (dB) NOISE FIGURE (dB) 9 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP Broadband Gain & Return Loss 3 2 +25C +85C -55C -20 -30 -40 1 0 -50 6 7 8 9 10 11 FREQUENCY (GHz) 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 79 HMC564 v00.0206 Psat vs. Temperature 20 20 16 16 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 8 +25C +85C -55C 4 12 +25C +85C -55C 8 4 0 0 6 7 8 9 10 11 12 13 14 6 7 8 9 FREQUENCY (GHz) 10 11 12 14 Power Compression @ 8 GHz 35 Pout (dBm), GAIN (dB), PAE(%) 20 30 25 20 +25C +85C -55C 15 10 5 6 7 8 9 10 11 12 13 15 10 Pout Gain PAE 5 0 -15 14 -10 FREQUENCY (GHz) -5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 8 GHz 10 8 16 P1dB Gain 6 12 4 8 Noise Figure 2 4 0 0 2.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) 20 3 3.5 Vdd (Vdc) 1 - 80 13 FREQUENCY (GHz) Output IP3 vs. Temperature OIP3 (dBm) LOW NOISE AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 HMC564 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) +3.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.5 49 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 12.97 mW/°C above 85 °C) 1.17 W Thermal Resistance (channel to die bottom) 77 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C +3.0 51 +3.5 53 Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP v00.0206 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 81 HMC564 v00.0206 LOW NOISE AMPLIFIERS - CHIP 1 1 - 82 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz Pad Descriptions Pad Number Function Description 1 IN This pad is AC coupled and matched to 50 Ohms from 7 - 13.5 GHz. 2, 3 Vdd1, 2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 4 OUT This pad is AC coupled and matched to 50 Ohms from 7 - 13.5 GHz. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC564 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 13.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 1 LOW NOISE AMPLIFIERS - CHIP v00.0206 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 83