APTGT100DDA60T3 Dual Boost chopper Trench + Field Stop IGBT® Power Module VCES = 600V IC = 100A* @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR2 7 23 8 Q1 Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability. Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 * 100 * 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A May, 2005 22 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design • High level of integration • Internal thermistor for temperature monitoring V W * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT100DDA60T3 – Rev 0 CR1 APTGT100DDA60T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Dynamic Characteristics Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A R G = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A R G = 10Ω Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage 5.0 Test Conditions Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 100A VGE = 0V trr Reverse Recovery Time IF = 100A VR = 300V Qrr Reverse Recovery Charge di/dt =2000A/µs 1.5 1.7 5.8 Typ 6100 390 190 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V pF ns 55 130 50 300 ns 70 1.8 3.5 Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C 9.9 mJ Max 250 500 Unit V µA A 2 V ns µC May, 2005 IRM Typ APT website – http://www.advancedpower.com 2-5 APTGT100DDA60T3 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT100DDA60T3 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.44 0.77 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 1.5 °C/W V 175 125 100 4.7 110 °C N.m g Package outline (dimensions in mm) 12 APT website – http://www.advancedpower.com 3-5 APTGT100DDA60T3 – Rev 0 May, 2005 28 17 1 APTGT100DDA60T3 Typical Performance Curve Output Characteristics (V GE=15V) 200 T J=25°C 175 150 150 TJ=125°C 125 T J=150°C 100 V GE=13V 125 VGE =15V 100 75 75 50 50 VGE =9V 25 25 TJ=25°C 0 0 0.5 1 1.5 V CE (V) 0 2 2.5 0 3 0.5 1 1.5 2 V CE (V) 3 3.5 7 175 V CE = 300V V GE = 15V RG = 10Ω T J = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 Eoff Eon 4 3 2 50 T J=150°C TJ=25°C 0 5 6 7 Er 1 25 8 9 Eon 0 10 11 0 12 25 50 75 Switching Energy Losses vs Gate Resistance VCE = 300V VGE =15V IC = 100A TJ = 150°C 10 8 Reverse Bias Safe Operating Area 250 Eon 200 IC (A) 12 Eoff 6 100 125 150 175 200 IC (A) V GE (V) E (mJ) 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=19V T J = 150°C 175 IC (A) IC (A) Output Characteristics 200 Eoff 150 100 4 Eon 2 VGE=15V T J=150°C RG=10Ω 50 Er 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 IGBT 0.9 May, 2005 0.7 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT100DDA60T3 – Rev 0 Thermal Impedance (°C/W) 0.5 APTGT100DDA60T3 Forward Characteristic of diode 200 VCE =300V D=50% RG=10Ω TJ=150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 T J=125°C 75 40 50 Hard switching 20 T J=150°C 25 T J=25°C 0 0 0 25 50 75 100 125 0 150 0.4 0.8 IC (A) 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT100DDA60T3 – Rev 0 May, 2005 Rectangular Pulse Duration in Seconds