ADPOW APTGT100DDA60T3 Dual boost chopper trench field stop igbt power module Datasheet

APTGT100DDA60T3
Dual Boost chopper
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 100A* @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
13 14
CR2
7
23
8
Q1
Q2
26
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
150 *
100 *
200
±20
340
Tj = 150°C
200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
May, 2005
22
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
V
W
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT100DDA60T3 – Rev 0
CR1
APTGT100DDA60T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
R G = 10Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
R G = 10Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
5.0
Test Conditions
Maximum Reverse Leakage Current
VR=600V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 100A
VGE = 0V
trr
Reverse Recovery Time
IF = 100A
VR = 300V
Qrr
Reverse Recovery Charge
di/dt =2000A/µs
1.5
1.7
5.8
Typ
6100
390
190
115
45
225
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
pF
ns
55
130
50
300
ns
70
1.8
3.5
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
100
1.6
1.5
125
220
4.7
Tj = 150°C
9.9
mJ
Max
250
500
Unit
V
µA
A
2
V
ns
µC
May, 2005
IRM
Typ
APT website – http://www.advancedpower.com
2-5
APTGT100DDA60T3 – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT100DDA60T3
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.44
0.77
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
1.5
°C/W
V
175
125
100
4.7
110
°C
N.m
g
Package outline (dimensions in mm)
12
APT website – http://www.advancedpower.com
3-5
APTGT100DDA60T3 – Rev 0
May, 2005
28
17
1
APTGT100DDA60T3
Typical Performance Curve
Output Characteristics (V GE=15V)
200
T J=25°C
175
150
150
TJ=125°C
125
T J=150°C
100
V GE=13V
125
VGE =15V
100
75
75
50
50
VGE =9V
25
25
TJ=25°C
0
0
0.5
1
1.5
V CE (V)
0
2
2.5
0
3
0.5
1
1.5
2
V CE (V)
3
3.5
7
175
V CE = 300V
V GE = 15V
RG = 10Ω
T J = 150°C
6
TJ=25°C
150
5
E (mJ)
125
100
TJ=125°C
75
Eoff
Eon
4
3
2
50
T J=150°C
TJ=25°C
0
5
6
7
Er
1
25
8
9
Eon
0
10
11
0
12
25
50
75
Switching Energy Losses vs Gate Resistance
VCE = 300V
VGE =15V
IC = 100A
TJ = 150°C
10
8
Reverse Bias Safe Operating Area
250
Eon
200
IC (A)
12
Eoff
6
100 125 150 175 200
IC (A)
V GE (V)
E (mJ)
2.5
Energy losses vs Collector Current
Transfert Characteristics
200
IC (A)
VGE=19V
T J = 150°C
175
IC (A)
IC (A)
Output Characteristics
200
Eoff
150
100
4
Eon
2
VGE=15V
T J=150°C
RG=10Ω
50
Er
0
0
0
10
20
30
40
50
Gate Resistance (ohms)
60
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.4
IGBT
0.9
May, 2005
0.7
0.3
0.5
0.2
0.1
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT website – http://www.advancedpower.com
4-5
APTGT100DDA60T3 – Rev 0
Thermal Impedance (°C/W)
0.5
APTGT100DDA60T3
Forward Characteristic of diode
200
VCE =300V
D=50%
RG=10Ω
TJ=150°C
100
ZCS
80
150
125
Tc=85°C
ZVS
60
175
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
100
T J=125°C
75
40
50
Hard
switching
20
T J=150°C
25
T J=25°C
0
0
0
25
50
75
100
125
0
150
0.4
0.8
IC (A)
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
Diode
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT100DDA60T3 – Rev 0
May, 2005
Rectangular Pulse Duration in Seconds
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