isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP064NPBF FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.008Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 55 V VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pluse 390 A PD Total Dissipation @TC=25℃ 200 W TJ Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.com 1 MAX UNIT 0.75 ℃/W 40 ℃/W isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP064NPF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 59A 0.008 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 55V; VGS= 0 25 μA VSD Forward On-Voltage IS= 59A; VGS= 0 1.3 V Gfs Forward Transconductance VDS= 25V；ID= 59A 42 S · isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark