HD10U45 HD TO101 TO- 27 7 Plastic-Encapsulate Diodes Features ●Io TO- 27 7 10A ●VRRM 45V ●High surge current capability ●Low Vf Applications ● Rectifier Marking Anode 1 Cathode & Heatsink ● 10U45 Parameter Symbol Peak repetitive reverse voltage VRRM Working peak reverse voltage VRWM Anode 2 Value Unit 45 V DC blocking voltage VR RMS reverse voltage VR(RMS) 32 V IO 10 A IFSM 300 A PD 1.2 W RΘJA 85 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Average rectified output current@ Tc=125℃ Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage VF Typical total capacitance Ctot Test Condition IR=250µA Min Type Max 45 Unit V VR=45V, Ta=25℃ 100 VR=45V, Ta=125℃ 50 500 µA mA IF=5A 0.35 0.40 V IF=10A 0.39 0.45 V VR=4V,f=1MHz 3100 High Diode Semiconductor pF 1 Typical Characteristics Forward Characteristics Reverse 15000 Characteristics 1000 10000 REVERSE CURRENT IR (mA) a T= 12 5℃ FORWARD CURRENT IF (mA) 100 T= a 2 5℃ 1000 Ta=125℃ 10 1 0.1 Ta=25℃ 0.01 1E-3 100 0 50 5 100 150 200 250 300 350 400 450 500 550 600 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE VF (mV) Power Derating Curve Capacitance Characteristics 1.4 5000 Ta=25℃ f=1MHz CAPACITANCE BETWEEN TERMINALS CT (pF) 4500 1.2 POWER DISSIPATION PD (W) 4000 3500 3000 2500 2000 1500 1.0 0.8 0.6 0.4 1000 0.2 500 0.0 0 0 1 2 3 4 5 6 REVERSE VOLTAGE VR (V) 7 8 9 10 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta (℃) High Diode Semiconductor 2 TO- 27 7 TO- 27 7 JSHD JSHD High Diode Semiconductor 3