AP9926TGO Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 2.5V gate drive G1 ▼ Surface mount package BVDSS 20V RDS(ON) 32mΩ S2 ID S1 TSSOP-8 D1 S1 4.7A Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±12 V Continuous Drain Current 3 4.7 A Continuous Drain Current 3 3.8 A 20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 125 ℃/W 200315051 AP9926TGO o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, ID=4A - - 32 mΩ VGS=2.5V, ID=2A - - 45 mΩ 0.5 - 1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=VGS, ID=250uA VDS=5V, ID=6A - 12 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=6A - 9 15 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=10V - 8 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 16 - ns tf Fall Time RD=10Ω - 7 - ns Ciss Input Capacitance VGS=0V - 550 880 pF Coss Output Capacitance VDS=20V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 94 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.9 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. AP9926TGO 30 30 5.0V 4.5V 3.5V TA=25 C ID , Drain Current (A) 25 2.5V 20 5.0V 4.5V 3.5V T A =150 o C 25 ID , Drain Current (A) o 15 10 5 20 2.5V 15 10 V G =1.5V 5 V G =1.5V 0 0 0 1 2 3 0 1 Fig 1. Typical Output Characteristics 3 Fig 2. Typical Output Characteristics 50 1.6 ID=2A o ID=4A V G =4.5V 1.4 Normalized R DS(ON) T A =25 C 40 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 30 1.2 1.0 0.8 0.6 20 0 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 6 IS(A) 4 o T j =150 C T j =25 o C 2 0 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9926TGO f=1.0MHz 1000 15 C iss V DS =10V V DS =12V V DS =16V 9 C (pF) VGS , Gate to Source Voltage (V) I D =6A 12 C oss 100 C rss 6 3 10 0 0 5 10 15 1 20 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Normalized Thermal Response (Rthja) 10 100us 1ms ID (A) 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 10ms 1 100ms 0.1 9 V DS , Drain-to-Source Voltage (V) 1s o T A =25 C Single Pulse 1 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta DC Rthja=208oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q