MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • Complementary Pair One 3904-Type NPN One 3906-Type PNP Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) SOT363 C2 B1 E1 E1, B1, C1 = PNP 3906 E2, B2, C2 = NPN 3904 E2 B2 C1 Device Schematic and Pinout Top View Top View Ordering Information (Note 4) Product MMDT3946-7-F MMDT3946-7R-F Notes: Compliance AEC-Q101 AEC-Q101 Marking K46 K46 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. K46 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMDT3946 Datasheet Number DS30123 Rev.12 - 2 Mar 3 YM Marking Information 2012 Z Apr 4 K46 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2013 A May 5 Jun 6 1 of 8 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D July 2014 © Diodes Incorporated MMDT3946 Absolute Maximum Ratings, NPN 3904 (@TA = +25°C unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Absolute Maximum Ratings, PNP 3906 (@TA = +25°C unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA Thermal Characteristics, Total Device (@TA = +25°C unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C 5. For a device mounted on minimum recommended pad layout that is on a single-sided 0.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. PD, POWER DISSIPATION (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Dissipation vs. Ambient Temperature (Total Device) MMDT3946 Datasheet Number DS30123 Rev.12 - 2 200 2 of 8 www.diodes.com July 2014 © Diodes Incorporated MMDT3946 Electrical Characteristics, NPN 3904 Characteristic OFF CHARACTERISTICS (Note 6) (@TA = +25°C unless otherwise specified.) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 60 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 5.0 6.0 V IE = 10µA, IC = 0 Collector Cutoff Current ICEX 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 300 IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 Output Admittance hoe 1.0 40 µS Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 5.0 dB VCE = 5.0V, IC = 100µA, RS = 1.0kΩ, f = 1.0kHz Delay Time td 35 ns Rise Time tr 35 ns Storage Time ts 200 ns Fall Time tf 50 ns ON CHARACTERISTICS (Note 6) Static Forward Current Transfer Ratio SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% MMDT3946 Datasheet Number DS30123 Rev.12 - 2 3 of 8 www.diodes.com July 2014 © Diodes Incorporated MMDT3946 Typical Electrical Characteristics, NPN 3904 1,000 hFE, DC CURRENT GAIN C IBO, INPUT CAPACITANCE (pF) C OBO, OUTPUT CAPACITANCE (pF) 15 (@TA = +25°C unless otherwise specified.) 10 100 5 0 0.1 10 1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (NPN-3904) 0.1 1,000 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current (NPN-3904) 0.1 0.01 0.1 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904) MMDT3946 Datasheet Number DS30123 Rev.12 - 2 1 4 of 8 www.diodes.com 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904) July 2014 © Diodes Incorporated MMDT3946 Electrical Characteristics, PNP 3906 Characteristic OFF CHARACTERISTICS (Note 6) (@TA = +25°C unless otherwise specified.) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -40 V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5.0 V IE = -10µA, IC = 0 Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cutoff Current IBL -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 300 IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kΩ Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 Output Admittance hoe 3.0 60 µS Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF 4.0 dB VCE = -5.0V, IC = -100µA, RS = 1.0kΩ, f = 1.0kHz Delay Time td 35 ns Rise Time tr 35 ns Storage Time ts 225 ns Fall Time tf 75 ns ON CHARACTERISTICS (Note 6) Static Forward Current Transfer Ratio SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS MMDT3946 Datasheet Number DS30123 Rev.12 - 2 5 of 8 www.diodes.com VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA July 2014 © Diodes Incorporated MMDT3946 Typical Electrical Characteristics, PNP 3906 1,000 hFE, DC CURRENT GAIN C IBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 100 10 1 (@TA = +25°C unless otherwise specified.) 0.1 100 1 0.1 10 100 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (PNP-3906) 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs. Collector Current (PNP-3906) 1,000 1.0 10 0.9 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 1 0.1 0.8 0.7 0.6 IC IB = 10 0.01 0.5 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906) MMDT3946 Datasheet Number DS30123 Rev.12 - 2 6 of 8 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906) July 2014 © Diodes Incorporated MMDT3946 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D L F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X MMDT3946 Datasheet Number DS30123 Rev.12 - 2 7 of 8 www.diodes.com July 2014 © Diodes Incorporated MMDT3946 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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