ON NTD3055L170T4G Power mosfet Datasheet

NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• NVD Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
http://onsemi.com
9.0 AMPERES, 60 VOLTS
RDS(on) = 170 mW
N−Channel
D
Typical Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
4
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Vdc
VGS
VGS
"15
"20
ID
ID
9.0
3.0
27
Apk
PD
28.5
0.19
2.1
1.5
W
W/°C
W
W
TJ, Tstg
−55 to
175
°C
EAS
30
mJ
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
June, 2012 − Rev. 5
3
Vdc
4
DPAK−3
CASE 369D
(Straight Lead)
STYLE 2
Adc
IDM
RqJC
RqJA
RqJA
5.2
71.4
100
TL
260
1
°C/W
2
3
MARKING DIAGRAMS
1 − Gate
2 − Drain
3 − Source
1 − Gate
2 − Drain
3 − Source
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above
the Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2012
1 2
1
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
A
Y
WW
3170L
G
YWW
31
70LG
4
Drain
YWW
31
70LG
4
Drain
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD3055L170/D
NTD3055L170, NVD3055L170
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Min
Typ
Max
Unit
60
−
−
53.6
−
−
−
−
−
−
1.0
10
−
−
±100
1.0
−
1.7
4.2
2.0
−
−
153
170
−
−
1.8
1.3
2.1
−
gFS
−
7.3
−
mhos
pF
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 4.5 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 5.0 Vdc, ID = 9.0 Adc)
(VGS = 5.0 Vdc, ID = 4.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
195
275
Coss
−
70
100
Crss
−
29
42
td(on)
−
9.7
20
tr
−
69
150
td(off)
−
10
20
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 9.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 9.0 Adc,
VGS = 5.0 Vdc) (Note 3)
ns
tf
−
38
80
QT
−
4.7
10
Q1
−
1.4
−
Q2
−
2.9
−
VSD
−
−
0.98
0.85
1.25
−
Vdc
trr
−
29.8
−
ns
ta
−
17.6
−
tb
−
12.2
−
QRR
−
0.031
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(IS = 9.0 Adc, VGS = 0 Vdc) (Note 3)
(IS = 9.0 Adc, VGS = 0 Vdc, TJ = 150°C)
(IS = 9.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
mC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NTD3055L170G
DPAK
(Pb−Free)
75 Units / Rail
NTD3055L170−1G
DPAK−3
(Pb−Free)
75 Units / Rail
NTD3055L170T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD3055L170T4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
http://onsemi.com
2
NTD3055L170, NVD3055L170
16
20
16
5V
8V
6V
12
4V
8
3.5 V
4
3V
0
0.35
1
3
2
4
5
6
7
8
1.5
2.5
2
3.5
3
4
4.5
5
5.5
Figure 2. Transfer Characteristics
TJ = 100°C
TJ = 25°C
0.15
TJ = −55°C
0.1
0.05
6
8
10
12
14
16
18
VGS = 15 V
0.3
0.25
TJ = 100°C
0.2
TJ = 25°C
0.15
0.1
TJ = −55°C
0.05
0
4
12
8
16
20
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
ID = 4.5 A
VGS = 5 V
1.8
1.6
1.4
1.2
1
6
0.35
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
Figure 1. On−Region Characteristics
0.2
2
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.25
2.2
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS = 10 V
4
8
TJ = 100°C
0.3
0
12
0
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
24
VGS = 0 V
TJ = 150°C
100
TJ = 125°C
10
TJ = 100°C
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
60
NTD3055L170, NVD3055L170
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
700
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
600
500
Ciss
400
300
Crss
Ciss
200
Coss
100
0
Crss
10
5
VGS
0
VDS
10
5
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
http://onsemi.com
4
1000
6
QT
5
Q1
Q2
4
3
t, TIME (ns)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
NTD3055L170, NVD3055L170
VGS
2
1
0
100
tr
tf
td(off)
10
td(on)
VDS = 30 V
ID = 9 A
VGS = 5 V
ID = 9 A
TJ = 25°C
0
1
2
3
4
QG, TOTAL GATE CHARGE (nC)
1
5
1
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
IS, SOURCE CURRENT (AMPS)
10
8
VGS = 0 V
TJ = 25°C
6
4
2
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.96
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
http://onsemi.com
5
NTD3055L170, NVD3055L170
I D, DRAIN CURRENT (AMPS)
100
VGS = 15 V
SINGLE PULSE
TC = 25°C
10
10 ms
100 ms
1 ms
1
0.1
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS , SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
SAFE OPERATING AREA
32
ID = 7.75 A
24
16
8
0
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
D = 0.5
0.2
1
0.1
P(pk)
0.05
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
001
0.00001
0.0001
0.001
0.01
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.1
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
6
1
10
NTD3055L170, NVD3055L170
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD3055L170, NVD3055L170
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD3055L170/D