Comchip CSFA105-G Smd super fast recovery rectifier Datasheet

SMD Super Fast Recovery Rectifiers
CSFA101-G Thru. CSFA105-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Super fast recovery time 35nS.
-Built-in strain relief.
-Low forward voltage drop.
0.209(5.31)
0.185(4.70)
Mechanical data
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Case: JEDEC DO-214AC, molded plastic.
0.059(1.50)
0.035(0.89)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
Dimensions in inches and (millimeter)
-Approx. weight: 0.063 grams
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CSFA101-G CSFA102-G CSFA103-G CSFA104-G CSFA105-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Max. DC blocking voltage
VDC
50
100
200
400
600
V
Max. RMS voltage
VRMS
35
70
140
280
420
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30
A
Max. average forward current
IO
1.0
A
Max. instantaneous forward voltage
@1.0A
VF
Reverse recovery time
Trr
35
nS
Max. DC reverse current at TA=25°C
rated DC blocking voltage TA=100°C
IR
5.0
100
μA
RθJL
35
TJ
150
O
C
TSTG
-55 to +150
O
C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
0.95
1.25
V
1.5
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.
2
REV:A
Page 1
QW-BS001
Comchip Technology CO., LTD.
SMD Super Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CSFA101-G thru CSFA105-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
10
CSFA101-G~103-G
O
Reverse Current, (μA)
TJ=125 C
Forward Current, (A)
100
TJ=75 OC
10
1
TJ=25 OC
1
CSFA104-G
0.1
CSFA105-G
0.01
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.1
0.001
0
20
40
60
80
100
120
0
140
0.4
0.6
0.8
1.0
1.2
1.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
14
Peak Forward Surge Current, ( A )
30
12
Junction Capacitance, (pF)
0.2
10
8
6
4
O
2
TJ=25 C
f=1MHz
Vsig=50mVp-p
TJ=25 OC
8.3ms single half sine
wave, JEDEC method
25
20
15
10
5
0
0
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
Average Forward Current, (A)
1.4
50Ω
NONINDUCTIVE
trr
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1.2
1.0
0.8
0.6
Single phase
Half wave 60Hz
0.4
0.2
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
150
175
Ambient Temperature (°C)
REV:A
Page 2
QW-BS001
Comchip Technology CO., LTD.
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