To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET ARY FL12KM-7A MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀➁➂ ¡10V DRIVE ¡VDSS ................................................................................ 350V ¡rDS (ON) (MAX) ................................................................ 0.4Ω ¡ID ............................................................................................ 7A ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Ratings Unit 350 ±30 V V 12 36 A A 12 35 A W Channel temperature –55 ~ +150 °C Storage temperature Isolation voltage AC for 1minute, Terminal to case –55 ~ +150 2000 °C V Weight Typical value 2.0 g VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Viso — Conditions VGS = 0V VDS = 0V L = 200µH Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance ID = 6A, VGS = 10V Drain-source on-state voltage ID = 6A, VGS = 10V y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions Unit Min. Typ. Max. 350 ±30 — — — — V V VGS = ±25V, VDS = 0V VDS = 350V, VGS = 0V — — — — ±10 1.0 µA mA ID = 1mA, VDS = 10V 2.0 3.0 4.0 V — — 0.32 1.90 0.40 2.40 Ω V ID = 6A, VDS = 10V — — 10 1050 — — S pF VDS = 25V, VGS = 0V, f = 1MHz — — 150 25 — — pF pF — — 20 30 — — ns ns — 160 — ns IS = 6A, VGS = 0V — — 60 1.5 — 2.0 ns V Channel to case — — 3.57 °C/W VDD = 150V, ID = 6A, VGS = 10V, R GEN = RGS = 50Ω PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 40 7 5 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 30 20 10 3 2 tw = 10µs 101 100µs 7 5 3 2 1ms 100 10ms 7 5 TC = 25°C Single Pulse 3 2 100ms 101 0 50 150 7 200 DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V,10V,8V,6V 20 DRAIN CURRENT ID (A) 100 Tc = 25°C Pulse Test 16 VGS = 20V,10V,8V,6V 10 12 5V 8 4 Tc = 25°C Pulse Test DRAIN CURRENT ID (A) 0 8 5V 6 4 PD = 35W 2 PD = 35W 4V 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 Tc = 25°C Pulse Test 16 ID = 24A 12 8 12A 4 6A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 Tc = 25°C Pulse Test 0.8 VGS = 20V 0.6 10V 0.4 0.2 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 20 16 12 Tc = 25°C VDS = 10V Pulse Test 8 4 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 3 2 101 7 5 2 0 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 103 3 Ciss 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) TC = 25°C 75°C 125°C GATE-SOURCE VOLTAGE VGS (V) 3 2 3 2 102 7 5 3 2 Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 101 7 5 3 VDS =10V Pulse Test 3 100 2 3 5 7101 2 3 2 td(off) 102 tf 7 5 tr 3 td(on) 2 Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50Ω 101 5 7 102 2 3 5 7103 DRAIN-SOURCE VOLTAGE VDS (V) 7 5 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL12KM-7A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 50V 16 100V 200V 12 Tch = 25°C ID =12A 8 4 0 0 20 40 60 80 16 TC = 125°C 12 75°C 4 0 100 1.6 2.4 3.2 4.0 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 100 7 5 VGS = 10V ID = 6A Pulse Test 3 2 –50 0 50 100 4.0 VDS = 10V ID = 1mA 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 VGS = 0V ID = 1mA 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) 0.8 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 0.4 0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 10–1 25°C 8 GATE CHARGE Qg (nC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) VGS = 0V Pulse Test VDS = SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 10–1 7 5 3 2 0.05 0.02 PDM 0.01 tw Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999