AP09N70R-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching
▼ Simple Drive Requirement
650V
RDS(ON)
0.75Ω
ID
G
▼ RoHS Compliant
BVDSS
9A
S
Description
AP09N70 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-262(R)
.
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Drain Current, VGS @ 10V
5
A
40
A
156
W
1.25
W/℃
305
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
9
A
EAR
Repetitive Avalanche Energy
9
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
201501125
AP09N70R-A-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
650
-
-
V
-
0.6
-
V/℃
VGS=10V, ID=4.5A
-
-
0.75
Ω
VGS=0V, ID=1mA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.5A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=650V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=520V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
ID=9A
-
44
-
nC
3
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
12
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
19
-
ns
tr
Rise Time
ID=9A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
56
-
ns
tf
Fall Time
VGS=10V
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
Coss
Crss
-
2660
-
pF
Output Capacitance
. =25V
VDS
-
170
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
-
-
9
A
-
-
40
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=9A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature
o
2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N70R-A-HF
10
10
10V
6.0V
5.0V
ID , Drain Current (A)
8
10V
6.0V
5.0V
4.5V
o
T C =150 C
8
ID , Drain Current (A)
T C =25 o C
6
4
4.5V
6
4
4.0V
2
2
V G = 3 .5 V
4.0V
V G = 3 .5 V
0
0
0
3
6
9
0
12
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized BVDSS
1.1
1
.
Normalized RDS(ON)
I D =4.5A
V G =10V
2
1
0.9
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
3.5
100
3.1
10
o
T j = 25 C
VGS(th) (V)
IS (A)
2.7
T j = 150 o C
2.3
1
1.9
1.5
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N70R-A-HF
16
I D =9A
C iss
2500
12
V DS =320V
V DS =400V
V DS =480V
8
2000
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
3000
1500
1000
4
500
0
0
0
20
40
60
1
5
9
13
17
21
25
C oss
C rss
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
ID (A)
100us
.
1ms
1
10ms
100ms
DC
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP09N70R-A-HF
MARKING INFORMATION
Part Number
Package Code
09N70R
A
YWWSSS
Option
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5