IXYS IXTH50N30 Advance technical information high current power mosfet Datasheet

Advance Technical Information
IXTH 50N30
IXTT 50N30
High Current
Power MOSFET
VDSS
ID25
= 300 V
= 50 A
Ω
= 65 mΩ
RDS(on)
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
50
A
IDM
TC = 25°C, pulse width limited by TJM
200
A
IAR
TC = 25°C
50
A
EAR
TC = 25°C
50
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
V/ns
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-247 (IXTH)
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque (TO-247)
Weight
TO-247
TO-268
1.13/10 Nm/lb.in.
6
5
g
g
G = Gate
S = Source
Features
z
z
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
300
VGS(th)
V DS = VGS, ID = 250µA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.0
V
nA
TJ = 25°C
TJ = 125°C
25
250
µA
µA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
65
mΩ
© 2003 IXYS All rights reserved
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
±100
D = Drain
TAB = Drain
z
Easy to mount
Space savings
High power density
DS99011A(08/03)
IXTH 50N30
IXTT 50N30
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
36
S
4400
pF
700
pF
C rss
240
pF
td(on)
24
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
24
tr
V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
33
ns
td(off)
RG = 2 Ω (External)
70
ns
17
ns
165
nC
30
nC
80
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31
(TO-247)
Source-Drain Diode
0.21
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
50
A
ISM
Repetitive
200
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
Trr
IF = 25A
-di/dt = 100 A/µs
VR = 100V
QRM
360
ns
4.0
µC
TO-247 Outline
1
2
Terminals: 1 - Gate
3 - Source
Dim.
3
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTH 50N30
IXTT 50N30
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
50
140
VGS = 10V
9V
8V
7V
VGS = 10V
9V
8V
120
100
ID - Amperes
ID - Amperes
40
6V
30
20
5V
10
7V
80
60
6V
40
5V
20
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
V DS - Volts
3
12
15
Junction Temperature
@ 125 Deg. C
3
50
VGS = 10V
9V
8V
7V
VGS = 10V
RDS(on) - Normalized
40
ID - Amperes
9
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Fig. 3. Output Characteristics
6V
30
20
5V
10
2.5
2
ID = 50A
1.5
ID = 25A
1
0.5
0
0
1
2
3
4
5
6
7
-50
8
-25
V DS - Volts
25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Temperature
Value vs. I D
60
3.4
VGS = 10V
3
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D25
50
2.6
ID - Amperes
RDS(on) - Normalized
6
V DS - Volts
T J = 125ºC
2.2
1.8
1.4
1
40
30
20
10
T J = 25ºC
0.6
0
0
20
40
60
80
ID - Amperes
© 2003 IXYS All rights reserved
100
120
140
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTH 50N30
IXTT 50N30
Fig. 8. Transconductance
100
75
80
60
Gfs - Siemens
ID - Amperes
Fig. 7. Input Admittance
60
T J = -40ºC
25ºC
125ºC
40
T J = -40ºC
25ºC
125ºC
45
30
15
20
0
0
3.5
4
4.5
5
5.5
6
6.5
0
7
20
40
V GS - Volts
80
100
120
140
150
175
Fig. 10. Gate Charge
150
10
125
8
100
VGS - Volts
IS - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
75
T J = 125ºC
50
60
ID - Amperes
T J = 25ºC
VDS = 150V
ID = 25A
IG = 10mA
6
4
2
25
0
0
0.4
0.55
0.7
0.85
1
1.15
1.3
0
V SD - Volts
25
50
75
100
125
QG - nanoCoulombs
Fig. 11. Capacitance
1
10000
Fig. 12. Maximum Transient Thermal
Resistance
C iss
R(th)JC - (ºC/W)
Capacitance - pF
f = 1M Hz
1000
C oss
0.1
C rss
100
0.01
0
5
10
15
20
25
V DS - Volts
30
35
40
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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