ON NTHD3102CT1G Power mosfet complementary, 20 v, 5.5 a /â 4.2 a, chipfet Datasheet

NTHD3102C
Power MOSFET
Complementary, 20 V, +5.5 A /−4.2 A,
ChipFETt
Features
•
•
•
•
•
•
Complementary N−Channel and P−Channel MOSFET
Small Size, 40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
This is a Pb−Free Device
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V(BR)DSS
29 mW @ 4.5 V
N−Channel
20 V
5.5 A
37 mW @ 2.5 V
48 mW @ 1.8 V
Applications
•
•
•
•
ID MAX
(Note 1)
RDS(on) TYP
64 mW @ 4.5 V
DC−DC Conversion Circuits
Load/Power Switching
Single or Dual Cell Li−Ion Battery Supplied Devices
Ideal for Power Management Applications in Portable, Battery
Powered Products
P−Channel
−20 V
−4.2 A
83 mW @ 2.5 V
105 mW @ 1.8 V
S2
D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Ch
Value
Unit
VDSS
20
V
VGS
"8.0
V
"8.0
P−Ch
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
ID
TA = 85°C
2.9
t≤5s
TA = 25°C
5.5
Steady
State
TA = 25°C
TA = 85°C
2.2
t≤5s
TA = 25°C
4.2
Steady
State
TA = 25°C
ID
PD
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
N−Channel MOSFET
P−Channel MOSFET
A
4.0
ChipFET
CASE 1206A
STYLE 2
A
3.1
MARKING
DIAGRAM
PIN CONNECTIONS
W
1.1
2.1
ESD
D2
S1
100
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
D1
8
1
S1
1
8
D1
7
2
G1
2
7
D2
6
3
S2
3
D2
5
4
G2
4
(Bottom View)
D6 M
G
t≤5s
G2
G1
6
5
(Top View)
D6 = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 2
1
Publication Order Number:
NTHD3102C/D
NTHD3102C
MAXIMUM RATINGS (continued) (TJ = 25°C unless otherwise noted)
Parameter
N−Channel
Continuous Drain Current (Note 3)
Steady
State
TA = 25°C
P−Channel
Continuous Drain Current (Note 3)
Steady
State
TA = 25°C
Power Dissipation (Note 3)
Pulsed Drain Current
N−Ch
Symbol
Value
Unit
ID
3.0
A
TA = 85°C
2.2
ID
A
2.3
TA = 85°C
1.7
TA = 25°C
PD
tp = 10 ms
IDM
P−Ch
0.6
W
16
A
12.6
TJ, TSTG
−55 to 150
°C
Source Current (Body Diode)
IS
1.7
A
Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds)
TL
260
°C
Symbol
Max
Unit
RqJA
110
°C/W
Operating Junction and Storage Temperature
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t ≤ 5 s (Note 2)
60
Junction−to−Ambient − Steady State (Note 3)
195
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
N/P
Drain−to−Source Breakdown Voltage
(Note 4)
V(BR)DSS
N
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
VGS = 0 V
P
IDSS
IGSS
ID = 250 mA
20
ID = −250 mA
−20
V
N
20.2
P
16.2
N
VGS = 0 V, VDS = 16 V
P
VGS = 0 V, VDS = −16 V
N
VGS = 0 V, VDS = 16 V
P
VGS = 0 V, VDS = −16 V
TJ = 25 °C
TJ = 85 °C
mV/°C
1.0
mA
−1.0
5.0
−5.0
N
VDS = 0 V, VGS = ±8.0 V
±100
P
VDS = 0 V, VGS = ±8.0 V
±100
nA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq).
4. Switching characteristics are independent of operating junction temperatures.
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2
NTHD3102C
ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Parameter
Symbol
N/P
VGS(TH)
N
Test Conditions
Min
Typ
Max
Unit
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS = VDS
P
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
ID = 250 mA
0.4
1.2
ID = −250 mA
−0.4
−1.2
N
VGS = 4.5 V , ID = 4.4 A
29
45
P
VGS = −4.5 V , ID = −3.2 A
64
80
N
VGS = 2.5 V , ID = 4.1 A
37
50
P
VGS = −2.5 V, ID = −2.5 A
83
110
N
VGS = 1.8 V , ID = 1.9 A
48
70
P
VGS = −1.8 V, ID = −0.6 A
105
150
N
VDS = 10 V, ID = 4.4 A
7.7
P
VDS = −10 V , ID = −3.2 A
5.9
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
N
VDS = 10 V
510
P
VDS = −10 V
650
Output Capacitance
COSS
N
VDS = 10 V
100
VDS = −10 V
100
N
VDS = 10 V
50
P
VDS = −10 V
50
P
Reverse Transfer Capacitance
CRSS
f = 1.0 MHz, VGS = 0 V
Total Gate Charge
QG(TOT)
N
VGS = 4.5 V, VDS = 10 V, ID = 4.4 A
P
Threshold Gate Charge
QG(TH)
N
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
5.8
7.9
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
6.6
8.9
VGS = 4.5 V, VDS = 10 V, ID = 4.4 A
0.96
P
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
0.98
N
VGS = 4.5 V, VDS = 10 V, ID = 4.4 A
1.2
P
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
1.4
N
VGS = 4.5 V, VDS = 10 V, ID = 4.4 A
1.56
P
VGS = −4.5 V, VDS = −10 V, ID = −3.2 A
1.64
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
7.2
N
VGS = 4.5 V, VDD = 10 V,
ID = 4.4 A, RG = 2.5 W
td(OFF)
15.9
15.7
tf
4.6
td(ON)
6.4
tr
td(OFF)
VGS = −4.5 V, VDD = −10 V,
ID = −3.2 A, RG = 2.5 W
P
tf
16.9
16.4
15.0
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
ns
NTHD3102C
ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
IS = 1.7 A
0.68
1.2
V
IS = −1.7 A
−0.7
−1.2
N
IS = 1.7 A
13.5
P
IS = −1.7 A
12.6
IS = 1.7 A
8.6
IS = −1.7 A
8.4
IS = 1.7 A
4.9
P
IS = −1.7 A
4.2
N
IS = 1.7 A
7.0
P
IS = −1.7 A
6.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
N
P
Reverse Recovery Time
tRR
Charge Time
ta
N
Discharge Time
tb
N
P
Reverse Recovery Charge
QRR
VGS = 0 V, TJ = 25 °C
VGS = 0 V,
dIS / dt = 100 A/ms
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4
ns
nC
NTHD3102C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
8
8
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.6 V
VGS = 8 V to 1.8 V
6
1.4 V
4
1.2 V
2
6
4
25°C
2
1.0 V
125°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
1.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.08
VGS = 4.5 V
0.06
TJ = 125°C
0.04
TJ = 25°C
TJ = −55°C
0.02
2
4
6
8
ID, DRAIN CURRENT (AMPS)
10
0.08
VGS = 2.5 V
TJ = 125°C
0.06
TJ = 25°C
0.04
TJ = −55°C
0.02
0
Figure 3. On−Resistance vs. Drain Current
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
2.0
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0
TJ = −55°C
2
4
6
8
ID, DRAIN CURRENT (AMPS)
10
Figure 4. On−Resistance vs. Drain Current and
Temperature
0.044
1.6
VGS = 2.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 25°C
0.036
VGS = 4.5 V
0.028
0.02
0
2
4
8
6
ID, DRAIN CURRENT (AMPS)
ID = 4 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
0.6
−50
10
Figure 5. On−Resistance vs. Drain Current
−25
75
0
25
50
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On−Resistance Variation with
Temperature
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5
150
NTHD3102C
TYPICAL N−CHANNEL PERFORMANCE CURVES
5
10
IS, SOURCE CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
(TJ = 25°C unless otherwise noted)
4
3
2
1
ID = 4.4 A
TJ = 25°C
0
0
2
4
6
1
TJ = 125°C
TJ = 25°C
0.1
0.01
8
0
0.2
Qg, TOTAL GATE CHARGE (nC)
0.4
0.8
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
100
0.2
ID = 250 mA
0.1
t, TIME (ns)
0
−0.1
tr
td(off)
tf
td(on)
10
−0.2
VDS = 10 V
ID = 4.4 A
VGS = 4.5 V
−0.3
−0.4
−50
1
−25
0
25
75
50
100
125
150
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE (OHMS)
Figure 9. Threshold Voltage
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
1000
TJ = 25°C
VGS = 0 V
C, CAPACITANCE (pF)
VGS(th), THRESHOLD VARIANCE (V)
VGS = 0 V
TJ = 25°C
800
CISS
600
400
COSS
200
CRSS
0
0
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Capacitance Variation
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6
NTHD3102C
TYPICAL P−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
8
TJ = 25°C
VGS = −8 V to −4 V
−2 V
−1.8 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
8
6
−1.6 V
4
−1.4 V
2
−1.2 V
6
4
2
25°C
−1.0 V
125°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0.8
2.8
0.4
1.2
1.6
2.0
2.4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 13. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 12. On−Region Characteristics
0.1
VGS = −4.5 V
TJ = 125°C
0.09
0.08
0.07
TJ = 25°C
0.06
TJ = −55°C
0.05
0.04
0
2
8
4
6
−ID, DRAIN CURRENT (AMPS)
10
0.16
VGS = −2.5 V
0.14
TJ = 125°C
0.12
0.10
TJ = 25°C
0.08
TJ = −55°C
0.06
0.04
0
Figure 14. On−Resistance vs. Drain Current
2
6
8
4
−ID, DRAIN CURRENT (AMPS)
10
Figure 15. On−Resistance vs. Drain Current
and Temperature
0.1
1.6
TJ = 25°C
VGS = −2.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = −55°C
0.09
0.08
0.07
VGS = −4.5 V
0.06
0.05
0.04
0
2
4
8
6
−ID, DRAIN CURRENT (AMPS)
ID = −4 A
VGS = −4.5 V
1.4
1.2
1.0
0.8
0.6
−50
10
Figure 16. On−Resistance vs. Drain Current
−25
0
25
50
100
125
75
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. On−Resistance Variation with
Temperature
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7
150
NTHD3102C
TYPICAL P−CHANNEL PERFORMANCE CURVES
5
10
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
(TJ = 25°C unless otherwise noted)
4
3
2
1
ID = −3.2 A
TJ = 25°C
0
0
2
4
6
1
TJ = 125°C
TJ = 25°C
0.1
0.01
0.2
8
Qg, TOTAL GATE CHARGE (nC)
0.4
0.6
0.8
1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 18. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 19. Diode Forward Voltage vs. Current
100
0.2
ID = −250 mA
0.1
tr
t, TIME (ns)
0
−0.1
td(off)
tf
10
td(on)
−0.2
VDS = −10 V
ID = −4.2 A
VGS = −4.5 V
−0.3
−0.4
−50
1
−25
0
25
75
50
100
150
125
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE (OHMS)
Figure 20. Threshold Voltage
Figure 21. Resistive Switching Time Variation
vs. Gate Resistance
800
TJ = 25°C
VGS = 0 V
C, CAPACITANCE (pF)
−VGS(th), THRESHOLD VARIANCE (V)
VGS = 0 V
TJ = 25°C
600
CISS
400
200
COSS
CRSS
0
0
4
8
12
16
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 22. Capacitance Variation
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8
NTHD3102C
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
Notes:
PDM
0.2
t1
0.1
t2
0.1
t1
1. Duty Cycle, D = t
2
2. Per Unit Base = RthJA = 90°C/W
0.05
0.02
0.01
10−4
3. TJM − TA = PDMZqJA(t)
4. Surface Mounted
Single Pulse
10−3
10−2
10 −1
1
Square Wave Pulse Duration (sec)
10
100
600
Figure 23. Thermal Response
ORDERING INFORMATION
Device
NTHD3102CT1G
Package
Shipping†
ChipFET
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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9
NTHD3102C
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
D
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
c
e
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
A
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
DIM
A
b
c
D
E
e
e1
L
HE
q
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.011
0.014
0.071
0.075
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
MIN
0.039
0.010
0.004
0.116
0.061
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
0.05 (0.002)
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.092
0.043
0.635
0.025
0.178
0.007
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
ǒ
mm
inches
Ǔ
0.66
0.026
Basic
0.254
0.010
SCALE 20:1
Style 2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
mm Ǔ
ǒinches
NTHD3102C
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTHD3102C/D
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