NUP2115L, SZNUP2115L Dual Line FlexRay Bus Protector The SZ/NUP2115L has been designed to protect the FlexRay transceiver from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • • • • 200 W Peak Power Dissipation per Line (8/20 ms Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed FlexRay Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns) Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices www.onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 200 W PEAK POWER SOT−23 CASE 318 STYLE 27 PIN 1 PIN 3 PIN 2 Applications • Automotive Networks ♦ FlexRay Bus MARKING DIAGRAM 25WMG G 1 25W M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 October, 2016 − Rev. 3 1 Publication Order Number: NUP2115L/D NUP2115L, SZNUP2115L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1) Value Unit 200 W TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body Model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 8.0 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM VBR Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) Min Typ Max Unit 24 − − V 26.2 − 32 V IR Reverse Leakage Current VRWM = 24 V − 15 100 nA VC Clamping Voltage IPP = 1 A (8/20 ms Waveform) (Note 4) − 33.4 36.6 V VC Clamping Voltage IPP = 3 A (8/20 ms Waveform) (Note 4) − 44 50 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 3.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 10 pF DC Diode Capacitance Matching VR = 0 V, 5 MHz (Note 5) − 0.1 2 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics table. ORDERING INFORMATION Package Shipping† NUP2115LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP2115LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP2115LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZNUP2115LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NUP2115L, SZNUP2115L TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 3.5 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 2.5 2.0 1.5 1.0 0.5 0.0 30 30 25 3.0 35 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 × 20 ms 50 9 45 40 125°C 7 35 25°C 6 IT, (mA) C, CAPACITANCE (pF) 8 5 30 25 20 15 4 25°C 10 3 0 10 5 15 20 0 20 25 TA = −55°C 22 24 26 28 30 32 34 VBR, VOLTAGE (V) Figure 4. VBR versus IT Characteristics Figure 3. Typical Junction Capacitance vs Reverse Voltage 120 25 −55°C +25°C TA = +150°C 100 PERCENT DERATING (%) 20 15 10 5 0 65°C 125°C 5 VR, REVERSE VOLTAGE (V) VR, REVERSE BIAS VOLTAGE (V) 50 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 2 45 40 0 1 2 3 IL, LEAKAGE CURRENT (nA) 4 80 60 40 20 0 −60 5 Figure 5. IR versus Temperature Characteristics −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 6. Temperature Power Dissipation Derating www.onsemi.com 3 NUP2115L, SZNUP2115L APPLICATIONS Figure 7 provides an example of a dual bidirectional TVS diode array that can be used for protection with the FlexRay network. The bidirectional array is created from four identical Zener TVS diodes. The clamping voltage of the composite device is equal to the breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. TVS diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of FlexRay transceivers can be easily increased by adding external TVS diodes to prevent transient voltage failures. The NUP2115L provides a transient voltage suppression solution for FlexRay data communication lines. The NUP2115L is a dual bidirectional TVS device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. TVS Diode Protection Circuit TVS diodes provide protection to a transceiver by clamping a surge voltage to a safe level. TVS diodes have high impedance below and low impedance above their breakdown voltage. A TVS Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7. FlexRay TVS Protection Circuit www.onsemi.com 4 NUP2115L, SZNUP2115L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0_ MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 _ MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0_ INCHES NOM MAX 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 0.021 0.027 0.094 0.104 −−− 10 _ STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SDS is a registered trademark of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. 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