NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 17, BFN 19 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BFN 16 BFN 18 DD DE Q62702-F885 Q62702-F1056 B SOT-89 C E Maximum Ratings Parameter Symbol BFN 16 Values BFN 18 Unit Collector-emitter voltage VCE0 250 300 Collector-base voltage VCB0 250 300 Emitter-base voltage VEB0 Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V 5 mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 75 Junction - soldering point Rth JS ≤ 20 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 16 BFN 18 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 16 BFN 18 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA BFN 16 BFN 18 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 Collector-base cutoff current VCB = 200 V VCB = 250 V VCB = 200 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C ICB0 BFN 16 BFN 18 BFN 16 BFN 18 Emitter-base cutoff current VEB = 3 V IEB0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) hFE BFN 16 BFN 18 V 250 300 – – – – 250 300 – – – – 5 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA 25 40 40 30 – – – – – – – – – – – – 0.4 0.5 – V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN 16 BFN 18 VCEsat Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat – – 0.9 Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT – 70 – MHz Output capacitance VCB = 30 V, f = 1 MHz Cobo – 1.5 – pF AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BFN 16 BFN 18 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Operating range IC = f (VCE0) TA = 25 ˚C, D = 0 Permissible pulse load Ptot max/Ptot DC = f (tp) Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 3 BFN 16 BFN 18 Transition frequency fT = f (IC) VCE = 10 V Collector cutoff current ICB0 = f (TA) VCB = 200 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4