Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage APPLICATIONS ·Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BUW12 VCBO Collector-base voltage 400 Open base BUW12A VEBO V 1000 BUW12 Collector-emitter voltage Emitter-base voltage UNIT 850 Open emitter BUW12A VCEO VALUE V 450 Open collector 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A PT Total power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~175 ℃ MAX UNIT 1.2 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BUW12 MIN TYP. MAX UNIT 400 IC=0.1A ; IB=0; L=25mH BUW12A V 450 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V 1.0 mA 10 mA ICES Collector cut-off current BUW12 BUW12A VCE=850V; VBE=0 VCE=1000V; VBE=0 IEBO Emitter cut-off current VEB=9V; IC=0 hFE DC current gain IC=1A ; VCE=5V 15 50 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V 2 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUW12 BUW12A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3