AP4959GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Lower Turn-on Voltage
D2
D1
▼ Simple Drive Requirement
D1
▼ Dual P MOSFET Package
G2
BVDSS
-16V
RDS(ON)
65mΩ
ID
-4.7A
S2
SO-8
G1
S1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-16
V
±8
V
3
-4.7
A
3
-3.8
A
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200803202
AP4959GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-16
-
-
V
-
-0.01
-
V/℃
VGS=-4.5V, ID=-4A
-
-
65
mΩ
VGS=-2.5V, ID=-3A
-
-
75
mΩ
VGS=-1.8V, ID=-1A
-
-
100
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-
-1.0
V
gfs
Forward Transconductance
VDS=-5V, ID=-4A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-12V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±8V
-
-
±100
nA
ID=-4A
-
13
20
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-12V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-10V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
19
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
38
-
ns
tf
Fall Time
RD=10Ω
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
920
1780
pF
Coss
Output Capacitance
VDS=-15V
-
175
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-1.7A, VGS=0V
Max. Units
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP4959GM
15
15
-5.0V
-4.5V
-3.5V
-1.8V
-ID , Drain Current (A)
-5.0V
-4.5V
-3.5V
T A = 150 o C
12
-ID , Drain Current (A)
o
T A = 25 C
12
9
6
9
-1.8V
6
3
3
V G = - 1. 0 V
V G = - 1. 0 V
0
0
0
1
2
3
0
4
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
I D =-4A
V G =-4.5V
330
I D = -1 A
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
270
210
150
1.2
1.0
0.8
90
30
0.6
0
1
2
3
4
-50
5
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
2.0
Normalized -VGS(th) (V)
4
3
-IS(A)
T j =150 o C
T j =25 o C
2
1.5
1.0
0.5
1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4959GM
14
I D = -4 A
V DS = - 1 2 V
12
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
6
1000
C iss
4
2
C oss
C rss
0
100
0
10
20
30
1
40
5
Fig 7. Gate Charge Characteristics
13
17
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
12
VG
-ID , Drain Current (A)
V DS =-5V
9
QG
-4.5V
T j =25 o C
6
T j =150 o C
QGS
QGD
3
Charge
Q
0
0
0.5
1
1.5
2
2.5
3
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
4959GM
YWWSSS
Package Code
meet Rohs requirement
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5