CY7C1046CV33 1M x 4 Static RAM Features • High speed — tAA = 10ns • Low active power for 10 ns speed — 324 mW (max.) • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features Functional Description[1] The CY7C1046CV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The four input/output pins (I/O0 through I/O3) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW, and WE LOW). The CY7C1046CV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolutionary) pinout. Logic Block Diagram Pin Configuration SOJ Top View INPUT BUFFER ROW DECODER I/O0 1M x 4 ARRAY SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A0 A1 A2 A3 A4 CE I/O0 VCC GND I/O1 WE A5 A6 A7 A8 A9 I/O1 I/O2 I/O3 COLUMN DECODER CE POWER DOWN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O3 GND VCC I/O2 A14 A13 A12 A11 A10 NC OE A 11 A 12 A 13 A14 A15 A16 A17 A18 A19 WE Selection Guide -8[2] 8 100 10 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current -10 10 90 10 -12 12 85 10 -15 15 80 10 Unit ns mA mA Notes: 1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. 2. Shaded areas contain advance information. Cypress Semiconductor Corporation Document #: 38-05003 Rev. *A • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised September 13, 2002 CY7C1046CV33 Current into Outputs (LOW)......................................... 20 mA Maximum Ratings Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) (Above which the useful life may be impaired. For user guidelines, not tested.) Latch-up Current..................................................... > 200 mA Storage Temperature .................................–65°C to +150°C Operating Range Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VCC to Relative GND[3] .... –0.5V to +4.6V Range Ambient Temperature VCC DC Voltage Applied to Outputs in High-Z State[3] ....................................–0.5V to VCC + 0.5V Commercial 0°C to +70°C 3.0V – 3.6V –40°C to + 85°C 3.0V – 3.6V Industrial DC Input Voltage[3] .................................–0.5V to VCC + 0.5V DC Electrical Characteristics Over the Operating Range -8[2] Parameter Description Test Conditions -10 -12 Min. Max. Min. Max. Min. Max. Min. Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage 2.0 VCC + 0.3 2.0 VIL Input LOW Voltage[3] –0.3 0.8 –0.3 0.8 IIX Input Load Current GND < VI < VCC –1 +1 –1 IOZ Output Leakage Current GND < VOUT < VCC, Output Disabled –1 +1 –1 ICC VCC Operating Supply Current VCC = Max., f = fMAX = 1/tRC ISB1 Automatic CE Max. VCC, CE > VIH Power-Down Current VIN > VIH or —TTL Inputs VIN < VIL, f = fMAX Automatic CE Max. VCC, Commercial Power-Down Current CE > VCC – 0.3V, VIN > VCC – 0.3V, —CMOS Inputs or VIN < 0.3V, f=0 ISB2 -15 2.4 2.4 0.4 2.4 0.4 2.4 0.4 VCC 2.0 + 0.3 V 0.4 V VCC + 0.3 2.0 VCC + 0.3 V –0.3 0.8 –0.3 0.8 V +1 –1 +1 –1 +1 µA +1 –1 +1 –1 +1 µA 100 90 85 80 mA 40 40 40 40 mA 10 10 10 10 mA Capacitance[4] Parameter Description CIN Input Capacitance COUT I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.3V Max. Unit 6 pF 6 pF Notes: 3. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05003 Rev. *A Page 2 of 9 CY7C1046CV33 AC Test Loads and Waveforms[5] 12-, 15-ns devices: 8-, 10-ns devices: Z=50Ω 50 Ω * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT R 317Ω 3.3V OUTPUT 30 pF* OUTPUT R2 351Ω 30 pF 1.5V (b) (a) High-Z characteristics: R 317Ω 90% GND 3.3V ALL INPUT PULSES 3.0V 90% 10% Rise Time: 1 V/ns 10% (c) Fall Time: 1 V/ns OUTPUT R2 351Ω 5 pF (d) Notes: 5. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d). Document #: 38-05003 Rev. *A Page 3 of 9 CY7C1046CV33 AC Switching Characteristics[6] Over the Operating Range -8[2] Parameter Description Min. -10 Max. Min. -12 Max. Min. -15 Max. Min. Max. Unit Read Cycle tpower[7] VCC(typical) to the first access 1 1 1 1 µs tRC Read Cycle Time 8 10 12 15 ns tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 8 10 12 15 ns tDOE OE LOW to Data Valid 4 5 6 7 ns Low-Z[9] tLZOE OE LOW to tHZOE OE HIGH to High-Z[8, 9] CE LOW to Low-Z[9] tHZCE CE HIGH to High-Z[8, 9] tPU CE LOW to Power-up tPD CE HIGH to Power-Down tLZCE Write 8 3 10 3 0 0 4 3 4 3 0 3 0 10 ns 7 6 ns ns 7 0 12 ns ns 0 6 5 8 15 3 0 5 3 0 12 3 ns ns 15 ns Cycle[10, 11] tWC Write Cycle Time 8 10 12 15 ns tSCE CE LOW to Write End 6 7 8 10 ns tAW Address Set-up to Write End 6 7 8 10 ns tHA Address Hold from Write End 0 0 0 0 ns tSA Address Set-up to Write Start 0 0 0 0 ns tPWE WE Pulse Width 6 7 8 10 ns tSD Data Set-up to Write End 4 5 6 7 ns tHD Data Hold from Write End 0 0 0 0 ns 3 3 3 3 ns tLZWE tHZWE WE HIGH to Low-Z[9] WE LOW to High-Z[8, 9] 4 5 6 7 ns Notes: 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. 7. tPOWER gives the minimum amount of time that the power supply should be at stable, typical Vcc values until the first memory access can be performed. 8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured ± 500 mV from steady-state voltage. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. The internal Write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of either of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. The minimum Write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05003 Rev. *A Page 4 of 9 CY7C1046CV33 s Switching Waveforms Read Cycle No. 1[14, 15] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[15, 16] ADDRESS tRC CE tACE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZCE HIGH IMPEDANCE DATA VALID tPD tPU 50% ICC 50% ISB Notes: 12. tr < 3 ns for the -10, -12, and -15 speeds. 13. No input may exceed VCC + 0.5V. 14. Device is continuously selected. OE, CE = VIL. 15. WE is HIGH for Read cycle. 16. Address valid prior to or coincident with CE transition LOW. Document #: 38-05003 Rev. *A Page 5 of 9 CY7C1046CV33 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[17, 18] tWC ADDRESS tSCE CE tSA tSCE tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[17, 18] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE tSD DATA I/O tHD DATAIN VALID NOTE 19 tHZOE Notes: 17. Data I/O is high impedance if OE = VIH. 18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 19. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05003 Rev. *A Page 6 of 9 CY7C1046CV33 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[18] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD NOTE 19 DATA I/O tHD DATA VALID tLZWE tHZWE Truth Table CE OE WE I/O0 – I/O7 Mode Power H X X High-Z Power-down Standby (ISB) L L H Data Out Read Active (ICC) L X L Data In Write Active (ICC) L H H High-Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 10 12 15 Ordering Code Package Name Package Type Operating Range CY7C1046CV33-10VC V33 32-lead (400-mil) Molded SOJ Commercial CY7C1046CV33-10VI V33 32-lead (400-mil) Molded SOJ Industrial CY7C1046CV33-12VC V33 32-lead (400-mil) Molded SOJ Commercial CY7C1046CV33-12VI V33 32-lead (400-mil) Molded SOJ Industrial CY7C1046CV33-15VC V33 32-lead (400-mil) Molded SOJ Commercial CY7C1046CV33-15VI V33 32-lead (400-mil) Molded SOJ Industrial Document #: 38-05003 Rev. *A Page 7 of 9 CY7C1046CV33 Package Diagram 32-Lead (400-Mil) Molded SOJ V33 51-85033-*B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05003 Rev. *A Page 8 of 9 © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1046CV33 Document History Page Document Title: CY7C1046CV33 1M x 4 Static RAM Document Number: 38-05003 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 112570 03/06/02 HGK New data sheet for RAM 7 *A 116478 09/16/02 CEA Add applications foot note to data sheet, page 1. Document #: 38-05003 Rev. *A Page 9 of 9