STMicroelectronics BZW50-27 Transiltm Datasheet

BZW50-10,B/180,B

TRANSILTM
FEATURES
PEAK PULSE POWER : 5000 W (10/1000µs)
STAND-OFF VOLTAGERANGE :
From 10V to 180V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
AG
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
PPP
Parameter
Value
Unit
5000
W
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
Power dissipation on infinite heatsink
Tamb = 75°C
6.5
W
IFSM
Non repetitive surge peak forward current
for unidirectional types
tp = 10ms
Tj initial = Tamb
500
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 65 to + 175
175
°C
°C
TL
Maximum lead temperature for soldering during 10s at 5mm
from case
230
°C
Value
Unit
15
°C/W
65
°C/W
P
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-l)
Junction to leads
Rth (j-a)
Junction to ambient on printed circuit.
January 1998 Ed : 2
Llead = 10 mm
1/5
BZW50-10,B/180,B
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
Symbol
IF
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
Types
VCL
V RM
IRM @ VRM
V
I RM
VBR
@
IR
min
VCL @ IPP
max
note2
Bidirectional
VF
I PP
max
Unidirectional
VBR
VCL @ IPP
max
10/1000µs
µA
V
V
mA
V
8/20µs
A
V
A
αT
C
max
typ
note3
note4
-4
pF
10 /°C
BZW50-10
BZW50-10B
5
10
11.1
1
18.8
266
23.4
2564
7.8
24000
BZW50-12
BZW50-12B
5
12
13.3
1
22
227
28
2143
8.4
18500
BZW50-15
BZW50-15B
5
15
16.6
1
26.9
186
35
1714
8.8
13500
BZW50-18
BZW50-18B
5
18
20
1
32.2
155
41.5
1446
9.2
11500
BZW50-22
BZW50-22B
5
22
24.4
1
39.4
127
51
1177
9.6
8500
BZW50-27
BZW50-27B
5
27
30
1
48.3
103
62
968
9.8
7000
BZW50-33
BZW50-33B
5
33
36.6
1
59
85
76
789
10
5750
BZW50-39
BZW50-39B
5
39
43.3
1
69.4
72
90
667
10.1
4800
BZW50-47
BZW50-47B
5
47
52
1
83.2
60.1
108
556
10.3
4100
BZW50-56
BZW50-56B
5
56
62.2
1
99.6
50
129
465
10.4
3400
BZW50-68
BZW50-68B
5
68
75.6
1
121
41
157
382
10.5
3000
BZW50-82
BZW50-82B
5
82
91
1
145
34
189
317
10.6
2600
BZW50-100
BZW50-100B
5
100
111
1
179
28
228
263
10.7
2300
BZW50-120
BZW50-120B
5
120
133
1
215
23
274
219
10.8
1900
BZW50-150
BZW50-150B
5
150
166
1
269
19
343
175
10.8
1700
BZW50-180
BZW50-180B
5
180
200
1
322
16
410
146
10.8
1500
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
% I PP
10 0
10 s
PULSE WAVEFORM 10/1000 s
50
0
t
1000 s
Note 2 :
Note 3 :
Note 4 :
Pulse test: tp < 50 ms.
∆VBR = αT * (Tamb - 25) * VBR(25°C)
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
2/5

BZW50-10,B/180,B
Fig. 2 : Peak pulse power versus exponential pulse duration.
Pp p (W)
1E7
Tj initial = 25ø
°C
1E6
1E5
1E4
1E3
tp (ms ) EXPO.
1E2
0.001
Fig. 3 :
0.01
0.1
1
10
100
Clamping voltage versus peak pulse current.
Exponential waveform
tp = 20 µs________
tp = 1 ms------------tp = 10 ms...............
Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆VBR = αT * (Tamb -25) * VBR (25°C).
For intermediate voltages, extrapolate the given results.
3/5

BZW50-10,B/180,B
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration (For FR4 PC Board
with L lead = 10mm).
Note : Multiply by 2 for units with V BR > 220V.
Fig. 7 : Relative variation of leakage current
versus junction temperature.
4/5

BZW50-10,B/180,B
ORDER CODE
BZW 50
-
10 B
5000 W
BIDIRECTIONAL
No suffix : Unidirectional
STAND-OFF VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
AG (Plastic)
DIMENSIONS
B
A
L1
note 1
B
L1
REF.
C
Millimeters
Min.
note 1
A
B
D
D
Min.
9
20
∅C
∅D
L1
Max.
Inches
0.354
0.787
8
1.35
Max.
1.45
1.27
0.315
0.053 0.057
0.050
Note 1 : The lead is not controlled within zone L1
note 2
Note2 : Theminimum axial length within which the device
canbe bentat right anglesis 0.79”(20 mm).
Packaging : standard packaging is tape and reel.
Weight = 1.6 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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