Diodes DMN2004WK-7 N-channel enhancement mode mosfet Datasheet

DMN2004WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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•
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•
•
•
•
•
•
•
•
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
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•
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Drain
SOT-323
D
Gate
Gate
Protection
Diode
TOP VIEW
ESD protected up to 2kV
G
Source
TOP VIEW
EQUIVALENT CIRCUIT
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Symbol
VDSS
VGSS
Value
20
±8
Units
V
V
ID
540
390
mA
IDM
1.5
A
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
TA = 25°C
TA = 85°C
Steady
State
Pulsed Drain Current (Note 3)
Thermal Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
S
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±1
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 16V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
⎯
1.0
V
RDS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
|Yfs|
VSD
200
0.5
⎯
⎯
⎯
1.4
ms
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
150
25
20
pF
pF
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN2004WK
Document number: DS30934 Rev. 4 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated
ID, DRAIN CURRENT (A)
DMN2004WK
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
1
0.1
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
6
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004WK
Document number: DS30934 Rev. 4 - 2
2 of 4
www.diodes.com
January 2009
© Diodes Incorporated
RDS(on), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
DMN2004WK
Tj, JUNCTION TEMPERATURE (°C)
Fig. 8 Static Drain-Source, On-Resistance vs. Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR , REVERSE DRAIN CURRENT (A)
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
ID, DRAIN CURRENT (A)
Fig. 7 On-Resistance vs. Drain Current and Gate Voltage
1000
ID, DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance vs. Drain Current
DMN2004WK
Document number: DS30934 Rev. 4 - 2
3 of 4
www.diodes.com
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 12 Capacitance Variation
January 2009
© Diodes Incorporated
DMN2004WK
Ordering Information
(Note 6)
Part Number
DMN2004WK-7
Notes:
Case
SOT-323
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year
Code
2006
T
Month
Code
YM
NAB
2007
U
Jan
1
Feb
2
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
2008
V
Mar
3
Apr
4
May
5
2009
W
Jun
6
2010
X
Jul
7
Aug
8
2011
Y
Sep
9
Oct
O
2012
Z
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
α
All Dimensions in mm
B C
G
H
K
M
J
L
D
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2004WK
Document number: DS30934 Rev. 4 - 2
4 of 4
www.diodes.com
January 2009
© Diodes Incorporated
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