DATA SHEET MUN221 Series SEMICONDUCTOR Bias Resistor Transistor H NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network SOT–23 (TO–236AB) 3 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be soldered using wave or reflow. The 1 2 modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. PIN 3 PIN 1 BASE (INPUT) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating R1 R2 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD *246 1.5 mW °C/W DEVICE MARKING AND RESISTOR VALUES Device Marking R1(K) R2(K) Packing Packing MUN2211 A8A 10 10 SOT-23 3000/Reel MUN2212 A8B 22 22 SOT-23 3000/Reel MUN2213 A8C 47 47 SOT-23 3000/Reel MUN2214 A8D 10 47 SOT-23 3000/Reel MUN2215 A8E 10 ∞ SOT-23 3000/Reel MUN2216 A8F 4.7 ∞ SOT-23 3000/Reel MUN2230 A8G 1.0 1.0 SOT-23 3000/Reel MUN2231 A8H 2.2 2.2 SOT-23 3000/Reel MUN2232 A8J 4.7 4.7 SOT-23 3000/Reel MUN2233 A8K 4.7 47 SOT-23 3000/Reel MUN2234 A8L 22 47 SOT-23 3000/Reel MUN2235 A8M 2.2 47 SOT-23 3000/Reel MUN2238 A8R 2.2 ∞ SOT-23 3000/Reel MUN2241 A8U 100 ∞ SOT-23 3000/Reel 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. http://www.yeashin.com 1 REV.02 20120803 MUN221 Series THERMAL CHARACTERISTICS Rating Symbol Thermal Resistance – Junction-to-Ambient (Note 1.) Operating and Storage Temperature Range Value Unit RθJA 508 °C/W TJ, Tstg –55 to +150 °C TL 260 10 °C Sec Maximum Temperature for Soldering Purposes, Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc IEBO – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 – – – – – – – – – – – – – – VCE(sat) – – 0.25 OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2235 MUN2238 MUN2241 ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2235 MUN2238 MUN2241 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230/MUN2231 MUN2215/MUN2216 (IC = 10 mA, IB = 1 mA) MUN2232/MUN2233/MUN2234 MUN2235/MUN2238 Vdc 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://www.yeashin.com 2 REV.02 20120803 MUN221 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max – – – – – – – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Unit ON CHARACTERISTICS (Note 3.) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω) VOL MUN2211 MUN2212 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2235 MUN2238 MUN2213 MUN2241 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω ) MUN2230 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω ) MUN2215 MUN2216 MUN2233 MUN2238 VOH 4.9 – – Vdc MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2216 MUN2230 MUN2231 MUN2232 MUN2233 MUN2234 MUN2235 MUN2238 MUN2241 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.88 130 kΩ R1/R2 0.8 0.17 – – 0.8 0.055 0.38 0.038 1.0 0.21 – – 1.0 0.1 0.47 0.047 1.2 0.25 – – 1.2 0.185 0.56 0.056 Input Resistor Resistor Ratio MUN2211/MUN2212/MUN2213 MUN2214 MUN2215/MUN2216/MUN2238 MUN2241 MUN2230/MUN2231/MUN2232 MUN2233 MUN2234 MUN2235 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://www.yeashin.com 3 REV.02 20120803 DEVICE CHARACTERISTICS MUN221 Series 200 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 250 1 IC/IB = 10 TA = –25°C 25°C 75°C 0.1 150 100 0.01 RθJA= 625°C/W 50 0 –50 0 50 100 150 0.001 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75°C 25°C –25°C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25°C 0 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage http://www.yeashin.com 30 50 40 10 TA = –25°C 0 20 Figure 4. Output Capcitance 25°C 10 10 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5°C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2211 TA = –25°C 25°C 75°C 1 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current 4 REV.02 20120803 50 DEVICE CHARACTERISTICS MUN221 Series – hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2212 1000 1 TA = –25°C IC/IB = 10 25°C 75°C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 VCE = 10 V TA = 75°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 100 f = 1 MHz lE = 0 A TA = 25°C 2 1 0 0 10 20 30 50 40 75°C 25°C TA = –25°C 10 1 0.1 0.01 VO = 5 V 0.001 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://www.yeashin.com 100 Figure 8. DC Current Gain 4 3 –25°C 25°C 100 5 REV.02 20120803 10 DEVICE CHARACTERISTICS MUN221 Series TYPICAL ELECTRICAL CHARACTERISTICS 10 IC/IB = 10 1000 TA = –25°C 25°C 75°C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) MUN2213 25°C –25°C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25°C 0.8 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) TA = 75°C IC, COLLECTOR CURRENT (mA) 1 0.6 0.4 0.2 0 0 VCE = 10 V 10 20 30 40 50 75°C 10 TA = –25°C 1 0.1 0.01 VO = 5 V 0.001 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 25°C 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA = –25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current http://www.yeashin.com 6 REV.02 20120803 10 DEVICE CHARACTERISTICS MUN221 Series 1 IC/IB = 10 TA = –25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MUN2214 300 VCE = 10 TA = 75°C 250 25°C 200 –25°C 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25°C 3.5 Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 4 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 25°C TA = –25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = –25°C Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current http://www.yeashin.com 7 REV.02 20120803 10 DEVICE CHARACTERISTICS MUN221 Series TYPICAL ELECTRICAL CHARACTERISTICS MUN2232 1000 VCE = 10 V IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = 75°C 0.1 25°C –25°C 0.01 TA = 75°C 100 10 1 0.001 4 12 8 16 24 20 28 0 25 IC, COLLECTOR CURRENT (mA) 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 23. DC Current Gain Figure 22. VCE(sat) vs. IC 6 100 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 25°C –25°C f = 1 MHz IE = 0 A TA = 25°C 5 4 3 2 1 VO = 5 V 75°C 25°C 10 1 TA = –25°C 0.1 0.01 0 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA = –25°C 75°C 1 0.1 0 25°C 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Output Voltage vs. Input Current http://www.yeashin.com 8 REV.02 20120803 8 DEVICE CHARACTERISTICS MUN221 Series TYPICAL ELECTRICAL CHARACTERISTICS MUN2233 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25°C 100 75°C 25°C TA = –25°C 0.01 TA = –25°C 10 VCE = 10 V 1 0.001 2 7 12 17 22 27 1 32 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 3.5 Cob, CAPACITANCE (pF) 75°C 3 2.5 2 1.5 1 0.5 0 75°C TA = –25°C 10 1 0.1 25°C VO = 5 V 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 25°C 75°C 1 0.1 0 6 12 18 24 IC, COLLECTOR CURRENT (mA) 30 Figure 31. Input Voltage vs. Output Current http://www.yeashin.com 9 REV.02 20120803 8 DEVICE CHARACTERISTICS MUN221 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal http://www.yeashin.com Figure 34. Inexpensive, Unregulated Current Source 10 REV.02 20120803 PACKAGE OUTLINE & DIMENSIONS MUN221 Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 http://www.yeashin.com inches mm 11 REV.02 20120803