NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 2, 4 1 BASE Features • Complement to NSS1C300ET4G • NSV Prefix for Automotive and Other Applications Requiring 3 EMITTER Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 4 • 1 2 3 MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector−Base Voltage VCBO 140 Vdc Collector−Emitter Voltage VCEO 100 Vdc VEB 6.0 Vdc Rating Emitter−Base Voltage Collector Current − Continuous IC 3.0 Adc ICM 6.0 Adc Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 33 0.26 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg Collector Current − Peak 2.1 0.017 W W/°C −65 to +150 °C DPAK CASE 369C STYLE 1 MARKING DIAGRAM YWW 1C31EG Y WW 1C31E G = Year = Work Week = Device Code = Pb−Free ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Package Shipping† NSS1C301ET4G DPAK (Pb−Free) 2500/ Tape & Reel NSV1C301ET4G DPAK (Pb−Free) 2500/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 3 1 Publication Order Number: NSS1C301E/D NSS1C301ET4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.8 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 59.5 °C/W Min Typ Max Unit 100 − − 140 − − 6.0 − − − − 0.1 − − 0.1 200 200 120 80 − − − − − − 360 − − − − − 0.015 0.045 0.080 0.115 0.050 0.090 0.150 0.250 − − 1.0 − − 0.90 − 120 − − 360 − − 30 − 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 140 V, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 V) IEBO V V V mA mA ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 0.1 A, VCE = 2.0 V) (IC = 0.5 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 10 mA) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) (IC = 3.0 A, IB = 0.300 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 100 MHz) − V V V fT Input Capacitance (VEB = 5.0 V, f = 1.0 MHz) Cibo Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz pF pF NSS1C301ET4G TYPICAL CHARACTERISTICS 500 500 150°C 400 350 25°C 300 250 200 −55°C 150 100 50 0 0.1 1 400 350 25°C 300 250 200 −55°C 150 100 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. DC Current Gain 0.4 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.4 IC/IB = 10 0.3 150°C 0.2 25°C 0.1 −55°C IC/IB = 50 0.3 0.2 150°C 25°C 0.1 −55°C 0 0 0.01 0.1 1 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Collector−Emitter Saturation Voltage Figure 4. Collector−Emitter Saturation Voltage 1.2 1.2 −55°C IC/IB = 10 1.0 VCE = 2 V 25°C VBE(on), BASE−EMITTER ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 5 V 50 0 0.01 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 450 VCE = 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 0.8 150°C 0.6 0.4 0.2 0 −55°C 1.0 25°C 0.8 150°C 0.6 0.4 0.2 0 0.01 0.1 1 10 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Base−Emitter Saturation Voltage Figure 6. Base−Emitter “On” Voltage http://onsemi.com 3 10 NSS1C301ET4G TYPICAL CHARACTERISTICS 1.6 1,000 1.4 Cib C, CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) TA = 25°C 1.2 IC = 3 A 1.0 IC = 2 A 0.8 IC = 1 A 0.6 IC = 0.5 A 0.4 IC = 0.1 A 10 0.1 1 10 100 1,000 0.1 10,000 1 10 IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Collector Saturation Region Figure 8. Capacitance 100 10 1,000 VCE = 5 V IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) Cob 0.2 0 100 10 10 mSec 100 mSec 1 1.0 Sec 0.1 0.01 0.01 R(t), TRANSIENT THERMAL RESPONSE (°C/W) 100 0.1 1 10 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Current−Gain−Bandwidth Product Figure 10. Safe Operating Area 10 D = 0.5 1 0.2 0.1 0.05 RqJC(t) = r(t) RqJC RqJC = 3.8°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 P(pk) 0.1 Figure 11. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 t1 t2 DUTY CYCLE, D = t1/t2 1 10 NSS1C301ET4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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