isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW73 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.) @IC= 12A APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 175 ℃ -65~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW73 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 3.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.5 V Base-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.5 V ICES Collector Cutoff Current VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA Current-Gain—Bandwidth Product IC= 1A; VCE= 10V VBE(sat) fT CONDITIONS MIN TYP. MAX 200 UNIT V 15 MHz Switching times ton Turn-on Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 15A; IB1= -IB2= 1.5A; VCC= 60V; tp= 10μs 2 1.5 μs 1.5 μs 0.5 μs