Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 27552 Revision B Amendment +1 Issue Date January 23, 2006 THIS PAGE LEFT INTENTIONALLY BLANK. Am29LV6402M 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 volt read, erase, and program operations ■ VersatileI/O control — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V TM ■ Manufactured on 0.23 µm MirrorBit process technology TM ■ SecSi™ (Secured Silicon) Sector region — 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ 100,000 erase cycles per sector ■ 20-year data retention at 125°C PERFORMANCE CHARACTERISTICS ■ High performance — 100 ns access time — 30 ns page read times — 0.5 s typical sector erase time — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates — 4-doubleword/8-word page read buffer — 16-doubleword/32-word write buffer ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 26 mA typical active read current — 100 mA typical erase/program current — 2 µA typical standby mode current ■ Package options — 80-ball Fortified BGA SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word or byte programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: VID-level method of changing code in locked sectors — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion Publication# 27552 Rev: B Amendment/1 Issue Date: January 23, 2006 Refer to AMD’s Website (www.amd.com) for the latest information. GENERAL DESCRIPTION The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers. An access time of 100 or 110 ns is available. Note that each access time has a specific operating voltage range (VCC) as specified in the Product Selector Guide and the Ordering Information sections. The device is offered in an 80-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 volt power supply for both read and write functions. In addition to a V CC input, a high-voltage accelerated program (WP#/ACC) input provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 and DQ15 (Data# Polling) or DQ6 and DQ14 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) outputs to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four. The VersatileI/O™ (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on the CE# control input and DQ I/Os to the same voltage level that is asserted on the VIO pin. Refer to the Ordering Information section for valid VIO options. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase 2 operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time. The SecSi™ (Secured Silicon) Sector provides a 128-doubleword/256-word area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. The Write Protect (WP#/ACC) feature protects the first or last sector by asserting a logic low on the WP# pin. AMD MirrorBitTM flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. RELATED DOCUMENTS For a comprehensive information on MirrorBit products, including migration information, data sheets, application notes, and software drivers, please see www.amd.com → Flash Memory → Product Information→MirrorBit→Flash Information→Technical Documentation. The following is a partial list of documents closely related to this product: MirrorBit™ Flash Memory Write Buffer Programming and Page Buffer Read Implementing a Common Layout for AMD MirrorBit and Intel StrataFlash Memory Devices Migrating from Single-byte to Three-byte Device IDs Am29LV6402M January 23, 2006 TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 4 Flash Memory Block diagram . . . . . . . . . . . . . . . . 5 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6 Special Package Handling Instructions .................................... 6 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Logic Symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 x16 Mode .................................................................................. 7 x32 Mode .................................................................................. 7 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 9 Table 1. Device Bus Operations ....................................................... 9 VersatileIOTM (VIO) Control ........................................................ 9 Requirements for Reading Array Data ................................... 10 Page Mode Read ............................................................................10 Writing Commands/Command Sequences ............................ 10 Write Buffer .....................................................................................10 Accelerated Program Operation ......................................................10 Autoselect Functions .......................................................................10 Automatic Sleep Mode ........................................................... 11 RESET#: Hardware Reset Pin ............................................... 11 Output Disable Mode .............................................................. 11 Table 2. Sector Address Table........................................................ 12 Table 3. Autoselect Codes, (High Voltage Method) ....................... 15 Sector Group Protection and Unprotection ............................. 16 Chip Erase Command Sequence ........................................... 29 Sector Erase Command Sequence ........................................ 29 Erase Suspend/Erase Resume Commands ........................... 29 Figure 7. Erase Operation .............................................................. 30 Table 10. Command Definitions (x32 Mode, WORD# = VIH) ......... 31 Table 11. Command Definitions (x16 Mode, WORD# = VIL).......... 32 Write Operation Status . . . . . . . . . . . . . . . . . . . . . 33 DQ7 and DQ5: Data# Polling .................................................. 33 Figure 8. Data# Polling Algorithm .................................................. 33 DQ6 and DQ14: Toggle Bits I ................................................. 34 Figure 9. Toggle Bit Algorithm ........................................................ 35 DQ2 and DQ10: Toggle Bits II ................................................ 35 Reading Toggle Bits DQ6 and DQ14/DQ2 and DQ10 ............ 35 DQ5 and DQ13: Exceeded Timing Limits ............................... 36 DQ3 and DQ11: Sector Erase Timer ...................................... 36 DQ1: Write-to-Buffer Abort ..................................................... 37 Table 12. Write Operation Status................................................... 37 Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 38 Figure 10. Maximum Negative Overshoot Waveform ................... 38 Figure 11. Maximum Positive Overshoot Waveform ..................... 38 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 38 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39 Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 12. Test Setup ..................................................................... 40 Table 13. Test Specifications ......................................................... 40 Table 4. Sector Group Protection/Unprotection Address Table ..... 16 Key to Switching Waveforms. . . . . . . . . . . . . . . . 40 Temporary Sector Group Unprotect ....................................... 17 Figure 13. Input Waveforms and Measurement Levels ...................................................................... 40 Figure 1. Temporary Sector Group Unprotect Operation ................17 Figure 2. In-System Sector Group Protect/Unprotect Algorithms ...18 SecSi (Secured Silicon) Sector Flash Memory Region .......... 19 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 41 Read-Only Operations ........................................................... 41 Table 5. SecSi Sector Contents ...................................................... 19 Figure 3. SecSi Sector Protect Verify ..............................................20 Figure 14. Read Operation Timings ............................................... 41 Figure 15. Page Read Timings ...................................................... 42 Hardware Data Protection ...................................................... 20 Hardware Reset (RESET#) .................................................... 43 Low VCC Write Inhibit .....................................................................20 Write Pulse “Glitch” Protection ........................................................20 Logical Inhibit ..................................................................................20 Power-Up Write Inhibit ....................................................................20 Common Flash Memory Interface (CFI) . . . . . . . 20 Table 6. CFI Query Identification String ..........................................21 Table 7. System Interface String..................................................... 21 Table 8. Device Geometry Definition ..............................................22 Table 9. Primary Vendor-Specific Extended Query ........................23 Command Definitions . . . . . . . . . . . . . . . . . . . . . 24 Reading Array Data ................................................................ 24 Reset Command ..................................................................... 24 Autoselect Command Sequence ............................................ 24 Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 25 Doubleword/Word Program Command Sequence ................. 25 Unlock Bypass Command Sequence ..............................................25 Write Buffer Programming ...............................................................25 Accelerated Program ......................................................................26 Figure 4. Write Buffer Programming Operation ...............................27 Figure 5. Program Operation ..........................................................28 Program Suspend/Program Resume Command Sequence ... 28 Figure 16. Reset Timings ............................................................... 43 Erase and Program Operations .............................................. 44 Figure 17. Program Operation Timings .......................................... 45 Figure 18. Accelerated Program Timing Diagram .......................... 45 Figure 19. Chip/Sector Erase Operation Timings .......................... 46 Figure 20. Data# Polling Timings (During Embedded Algorithms) . 47 Figure 21. Toggle Bit Timings (During Embedded Algorithms) ...... 48 Figure 22. DQ2 vs. DQ6 ................................................................. 48 Temporary Sector Unprotect .................................................. 49 Figure 23. Temporary Sector Group Unprotect Timing Diagram ... 49 Figure 24. Sector Group Protect and Unprotect Timing Diagram .. 50 Alternate CE# Controlled Erase and Program Operations ..... 51 Figure 25. Alternate CE# Controlled Write (Erase/Program) Operation Timings .......................................................................... 52 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 52 Erase And Programming Performance. . . . . . . . 53 TSOP Pin and BGA Package Capacitance . . . . . 53 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 LSB080—80-Ball Fortified Ball Grid Array (Fortified BGA) 13 x 11 mm Package .............................................................. 54 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 55 Figure 6. Program Suspend/Program Resume ...............................28 January 23, 2006 Am29LV6402M 3 PRODUCT SELECTOR GUIDE Part Number Am29LV1282M 100R (VIO = 2.7–3.6 V) 110R (VIO = 1.65–3.6 V) Max. Access Time (ns) 100 110 Max. CE# Access Time (ns) 100 110 Max. Page access time (tPACC) 30 30 Max. OE# Access Time (ns) 30 30 Speed Option VCC = 3.0–3.6 V MCP BLOCK DIAGRAM A21 to A0 RY/BY# CE# OE# WE# RESET# WORD# WP#/ACC 64 Mbit Flash Memory #1 DQ23/A-1 to DQ16; DQ7-DQ0 X16 X32 64 Mbit Flash Memory #2 DQ31 to DQ0 X16 DQ31/A-1 to DQ24; DQ15 TO DQ8 Note:In x16 Mode, DQ31 and DQ23 must be connected together on the board. 4 Am29LV6402M January 23, 2006 FLASH MEMORY BLOCK DIAGRAM DQ31–DQ0 (A-1) RY/BY# VCC Sector Switches VSS Erase Voltage Generator RESET# WE# WP#/ACC WORD# VIO State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# VCC Detector Timer Address Latch STB A21–A0 Input/Output Buffers STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix Note:In x16 Mode, DQ31 and DQ23 must be connected together on the board. January 23, 2006 Am29LV6402M 5 CONNECTION DIAGRAMS 80-ball Fortified BGA Top View, Balls Facing Down A8 B8 C8 D8 E8 F8 G8 H8 J8 K8 DQ21 DQ28 RFU RFU VIO VSS RFU RFU DQ29 DQ22 A7 B7 C7 D7 E7 F7 G7 H7 J7 K7 DQ23/A-1 A13 A12 A14 A15 A16 WORD# DQ15 VSS DQ20 A6 B6 C6 D6 E6 F6 G6 H6 J6 K6 DQ30 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 DQ27 A5 B5 C5 D5 E5 F5 G5 H5 J5 K5 VSS WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 DQ26 A4 B4 C4 D4 E4 F4 G4 H4 J4 K4 A18 A20 DQ2 DQ10 DQ11 DQ3 DQ19 VCC RY/BY# WP#/ACC A3 B3 C3 D3 E3 F3 G3 H3 J3 K3 DQ31/A-1 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 DQ17 A2 B2 C2 D2 E2 F2 G2 H2 J2 K2 VSS VCC DQ18 A3 A4 A2 A1 A0 CE# OE# A1 B1 C1 D1 E1 F1 G1 H1 J1 K1 RFU DQ16 VCC RFU RFU RFU VIO RFU DQ24 DQ25 Note: The FBGA package pinout configuration shown is preliminary. The ball count and package physical dimensions have not yet been determined. Contact AMD for further information. Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP, BGA, PLCC, PDIP, SSOP). The package and/or data integrity may be 6 compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29LV6402M January 23, 2006 PIN CONFIGURATION A–1 = Least significant address bit for the 16-bit data bus, and selects between the high and low word. A –1 is not used for the 32-bit mode (WORD# = VIH). A21–A0 = 22-bit address bus for 128 Mb device. DQ31–DQ0 = 32-bit data inputs/outputs/float WORD# = Selects 16-bit or 32-bit mode. When WORD# = VIH, data is output on DQ31–DQ0. When WORD# = VIL, data is output on DQ15–DQ0. CE# = Chip Enable Input. OE# = Output Enable Input. WE# = Write enable. VSS = Device ground RY/BY# = Ready/Busy output and open drain. When RY/BY# = VOH, the device is ready to accept read operations and commands. When RY/BY# = VOL, the device is either executing an embedded algorithm or the device is executing a hardware reset operation. WP#/ACC = Write Protect input/Acceleration input. VCC = Power Supply (2.7 V to 3.6 V) RESET# = Hardware reset input NC = Pin not connected internally LOGIC SYMBOLS x16 Mode x32 Mode 23 22 A21 to A-1 CE# 16 A21–A0 DQ15–DQ0 CE# OE# OE# WE# WE# WP#/ACC WP#/ACC RESET# RESET# WP# WP# WORD# WORD# RY/BY# VIO 32 DQ31–DQ0 RY/BY# VIO Note:In x16 mode, DQ31 and DQ23 must be connected to each other on the board. January 23, 2006 Am29LV6402M 7 ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV6402M H 100R PH I TEMPERATURE RANGE I = Industrial (–40°C to +85°C) PACKAGE TYPE PH = 80-Ball Fortified Ball Grid Array (FBGA), 1.00 mm ball pitch, 13 x 11 mm, (LSB080) SPEED OPTION See Product Selector Guide and Valid Combinations SECTOR ARCHITECTURE AND SECTOR WRITE PROTECTION (WP# = VIL) H = Uniform sector device, highest address sector protected L = Uniform sector device, lowest address sector protected DEVICE NUMBER/DESCRIPTION Am29LV6402MH/L 2 x 64 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBitTM Uniform Sector Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations Valid Combinations for Fortified BGA Package Order Number Speed VCC VIO (ns) Range Range Package Marking Am29LV6402MH100R, PHI L6402MH10R I Am29LV6402ML100R 100 Am29LV6402MH110R, PHI L6402ML11R Am29LV6402ML110R 110 8 I 3.0– 3.6 V Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. 2.7– 3.6 V 1.65– 3.6 V Am29LV6402M January 23, 2006 DEVICE BUS OPERATIONS register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the Table 1. Device Bus Operations DQ31–DQ16 CE# OE# WE# RESET# WP# ACC Addresses (Note 2) DQ15– DQ0 WORD# = VIH Read L L H H X X AIN DOUT DOUT Write (Program/Erase) L H L H (Note 3) X AIN Accelerated Program L H L H (Note 3) VHH AIN VCC ± 0.3 V X X VCC ± 0.3 V X H X High-Z High-Z High-Z Output Disable L H H H X X X High-Z High-Z High-Z Reset X X X L X X X High-Z High-Z High-Z Sector Group Protect (Note 2) L H L VID H X SA, A6 =L, A3=L, A2=L, A1=H, A0=L (Note 4) X X Sector Group Unprotect (Note 2) L H L VID H X SA, A6=H, A3=L, A2=L, A1=H, A0=L (Note 4) X X Temporary Sector Group Unprotect X X X VID H X AIN Operation Standby WORD# = VIL DQ31–DQ16 = High-Z, (Note 4) (Note 4) DQ31 & (Note 4) (Note 4) DQ23= A-1 (Note 4) (Note 4) High-Z Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5V, X = Don’t Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A21:A0 in doubleword mode; A21:A-1 in word mode. Sector addresses are A21:A15 in both modes. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group Protection and Unprotection” section. 3. If WP# = VIL, the first or last sector remains protected. If WP# = VIH, the first or last sector will be protected or unprotected as determined by the method described in “Sector Group Protection and Unprotection”. All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version ordered.) 4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2). Word/Byte Configuration The WORD# pin controls whether the device data I/O pins operate in the word or doubleword configuration. If the WORD# pin is set at VIH, the device is in doubleword configuration, DQ31–DQ0 are active and controlled by CE# and OE#. If the WORD# pin is set at VIL, the device is in word configuration, and only data I/O pins DQ15–DQ0 are active and controlled by CE# and OE#. The data I/O pins DQ31–DQ16 are tri-stated, and the DQ23 and January 23, 2006 DQ31 pins are used as inputs for the LSB (A-1) address function. VersatileIOTM (VIO) Control The VersatileIOTM (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted on VIO. See Ordering Information for VIO options on this device. Am29LV6402M 9 Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram. Refer to the DC Characteristics table for the active current specification on reading array data. Page Mode Read The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 4 doublewords/8 words. The appropriate page is selected by the higher address bits A(max)–A2. Address bits A1–A0 in doubleword mode (A1–A-1 in word mode) determine the specific word within a page. This is an asynchronous operation; the microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is t ACC or t CE . Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Doubleword/Word Program Command Sequence” section has details on programming data to the device 10 using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address space that each sector occupies. Refer to the DC Characteristics table for the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Write Buffer Write Buffer Programming allows the system write to a maximum of 16 doublewords/32 words in one programming operation. This results in faster effective programming time than the standard programming algorithms. See “Write Buffer” for more information. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin returns the device to normal operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than Am29LV6402M January 23, 2006 VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. Refer to the DC Characteristics table for the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Refer to the DC Characteristics table for the automatic sleep mode current specification. RESET#: Hardware Reset Pin SET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Refer to the AC Characteristics tables for RESET# parameters and to Figure 16 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. The RESET# pin provides a hardware method of resetting the device to reading array data. When the RE- January 23, 2006 Am29LV6402M 11 Table 2. A21–A15 Sector 12 Sector Address Table Sector Size (Kwords/Kdoublewords) 16-bit Address Range (in hexadecimal) 32-bit Address Range (in hexadecimal) SA0 0 0 0 0 0 0 0 64/32 000000–00FFFF 000000–007FFF SA1 0 0 0 0 0 0 1 64/32 010000–01FFFF 008000–00FFFF SA2 0 0 0 0 0 1 0 64/32 020000–02FFFF 010000–017FFF SA3 0 0 0 0 0 1 1 64/32 030000–03FFFF 018000–01FFFF SA4 0 0 0 0 1 0 0 64/32 040000–04FFFF 020000–027FFF SA5 0 0 0 0 1 0 1 64/32 050000–05FFFF 028000–02FFFF SA6 0 0 0 0 1 1 0 64/32 060000–06FFFF 030000–037FFF SA7 0 0 0 0 1 1 1 64/32 070000–07FFFF 038000–03FFFF SA8 0 0 0 1 0 0 0 64/32 080000–08FFFF 040000–047FFF SA9 0 0 0 1 0 0 1 64/32 090000–09FFFF 048000–04FFFF SA10 0 0 0 1 0 1 0 64/32 0A0000–0AFFFF 050000–057FFF SA11 0 0 0 1 0 1 1 64/32 0B0000–0BFFFF 058000–05FFFF SA12 0 0 0 1 1 0 0 64/32 0C0000–0CFFFF 060000–067FFF SA13 0 0 0 1 1 0 1 64/32 0D0000–0DFFFF 068000–06FFFF SA14 0 0 0 1 1 1 0 64/32 0E0000–0EFFFF 070000–077FFF SA15 0 0 0 1 1 1 1 64/32 0F0000–0FFFFF 078000–07FFFF SA16 0 0 1 0 0 0 0 64/32 100000–10FFFF 080000–087FFF SA17 0 0 1 0 0 0 1 64/32 110000–11FFFF 088000–08FFFF SA18 0 0 1 0 0 1 0 64/32 120000–12FFFF 090000–097FFF SA19 0 0 1 0 0 1 1 64/32 130000–13FFFF 098000–09FFFF SA20 0 0 1 0 1 0 0 64/32 140000–14FFFF 0A0000–0A7FFF SA21 0 0 1 0 1 0 1 64/32 150000–15FFFF 0A8000–0AFFFF SA22 0 0 1 0 1 1 0 64/32 160000–16FFFF 0B0000–0B7FFF SA23 0 0 1 0 1 1 1 64/32 170000–17FFFF 0B8000–0BFFFF SA24 0 0 1 1 0 0 0 64/32 180000–18FFFF 0C0000–0C7FFF SA25 0 0 1 1 0 0 1 64/32 190000–19FFFF 0C8000–0CFFFF SA26 0 0 1 1 0 1 0 64/32 1A0000–1AFFFF 0D0000–0D7FFF SA27 0 0 1 1 0 1 1 64/32 1B0000–1BFFFF 0D8000–0DFFFF SA28 0 0 1 1 1 0 0 64/32 1C0000–1CFFFF 0E0000–0E7FFF SA29 0 0 1 1 1 0 1 64/32 1D0000–1DFFFF 0E8000–0EFFFF SA30 0 0 1 1 1 1 0 64/32 1E0000–1EFFFF 0F0000–0F7FFF SA31 0 0 1 1 1 1 1 64/32 1F0000–1FFFFF 0F8000–0FFFFF SA32 0 1 0 0 0 0 0 64/32 0200000–20FFFF 100000–107FFF SA33 0 1 0 0 0 0 1 64/32 210000–21FFFF 108000–10FFFF SA34 0 1 0 0 0 1 0 64/32 220000–22FFFF 110000–117FFF SA35 0 1 0 0 0 1 1 64/32 230000–23FFFF 118000–11FFFF SA36 0 1 0 0 1 0 0 64/32 240000–24FFFF 120000–127FFF SA37 0 1 0 0 1 0 1 64/32 250000–25FFFF 128000–12FFFF SA38 0 1 0 0 1 1 0 64/32 260000–26FFFF 130000–137FFF SA39 0 1 0 0 1 1 1 64/32 270000–27FFFF 138000–13FFFF SA40 0 1 0 1 0 0 0 64/32 280000–28FFFF 140000–147FFF SA41 0 1 0 1 0 0 1 64/32 290000–29FFFF 148000–14FFFF SA42 0 1 0 1 0 1 0 64/32 2A0000–2AFFFF 150000–157FFF SA43 0 1 0 1 0 1 1 64/32 2B0000–2BFFFF 158000–15FFFF SA44 0 1 0 1 1 0 0 64/32 2C0000–2CFFFF 160000–167FFF SA45 0 1 0 1 1 0 1 64/32 2D0000–2DFFFF 168000–16FFFF SA46 0 1 0 1 1 1 0 64/32 2E0000–2EFFFF 170000–177FFF Am29LV6402M January 23, 2006 Table 2. Sector Address Table (Continued) A21–A15 Sector Sector Size (Kwords/Kdoublewords) 16-bit Address Range (in hexadecimal) 32-bit Address Range (in hexadecimal) SA47 0 1 0 1 1 1 1 64/32 2F0000–2FFFFF 178000–17FFFF SA48 0 1 1 0 0 0 0 64/32 300000–30FFFF 180000–187FFF SA49 0 1 1 0 0 0 1 64/32 310000–31FFFF 188000–18FFFF SA50 0 1 1 0 0 1 0 64/32 320000–32FFFF 190000–197FFF SA51 0 1 1 0 0 1 1 64/32 330000–33FFFF 198000–19FFFF SA52 0 1 1 0 1 0 0 64/32 340000–34FFFF 1A0000–1A7FFF SA53 0 1 1 0 1 0 1 64/32 350000–35FFFF 1A8000–1AFFFF SA54 0 1 1 0 1 1 0 64/32 360000–36FFFF 1B0000–1B7FFF SA55 0 1 1 0 1 1 1 64/32 370000–37FFFF 1B8000–1BFFFF SA56 0 1 1 1 0 0 0 64/32 380000–38FFFF 1C0000–1C7FFF SA57 0 1 1 1 0 0 1 64/32 390000–39FFFF 1C8000–1CFFFF SA58 0 1 1 1 0 1 0 64/32 3A0000–3AFFFF 1D0000–1D7FFF SA59 0 1 1 1 0 1 1 64/32 3B0000–3BFFFF 1D8000–1DFFFF SA60 0 1 1 1 1 0 0 64/32 3C0000–3CFFFF 1E0000–1E7FFF SA61 0 1 1 1 1 0 1 64/32 3D0000–3DFFFF 1E8000–1EFFFF SA62 0 1 1 1 1 1 0 64/32 3E0000–3EFFFF 1F0000–1F7FFF SA63 0 1 1 1 1 1 1 64/32 3F0000–3FFFFF 1F8000–1FFFFF SA64 1 0 0 0 0 0 0 64/32 400000–40FFFF 200000–207FFF SA65 1 0 0 0 0 0 1 64/32 410000–41FFFF 208000–20FFFF SA66 1 0 0 0 0 1 0 64/32 420000–42FFFF 210000–217FFF SA67 1 0 0 0 0 1 1 64/32 430000–43FFFF 218000–21FFFF SA68 1 0 0 0 1 0 0 64/32 440000–44FFFF 220000–227FFF SA69 1 0 0 0 1 0 1 64/32 450000–45FFFF 228000–22FFFF SA70 1 0 0 0 1 1 0 64/32 460000–46FFFF 230000–237FFF SA71 1 0 0 0 1 1 1 64/32 470000–47FFFF 238000–23FFFF SA72 1 0 0 1 0 0 0 64/32 480000–48FFFF 240000–247FFF SA73 1 0 0 1 0 0 1 64/32 490000–49FFFF 248000–24FFFF SA74 1 0 0 1 0 1 0 64/32 4A0000–4AFFFF 250000–257FFF SA75 1 0 0 1 0 1 1 64/32 4B0000–4BFFFF 258000–25FFFF SA76 1 0 0 1 1 0 0 64/32 4C0000–4CFFFF 260000–267FFF SA77 1 0 0 1 1 0 1 64/32 4D0000–4DFFFF 268000–26FFFF SA78 1 0 0 1 1 1 0 64/32 4E0000–4EFFFF 270000–277FFF SA79 1 0 0 1 1 1 1 64/32 4F0000–4FFFFF 278000–27FFFF SA80 1 0 1 0 0 0 0 64/32 500000–50FFFF 280000–287FFF SA81 1 0 1 0 0 0 1 64/32 510000–51FFFF 288000–28FFFF SA82 1 0 1 0 0 1 0 64/32 520000–52FFFF 290000–297FFF SA83 1 0 1 0 0 1 1 64/32 530000–53FFFF 298000–29FFFF SA84 1 0 1 0 1 0 0 64/32 540000–54FFFF 2A0000–2A7FFF SA85 1 0 1 0 1 0 1 64/32 550000–55FFFF 2A8000–2AFFFF SA86 1 0 1 0 1 1 0 64/32 560000–56FFFF 2B0000–2B7FFF SA87 1 0 1 0 1 1 1 64/32 570000–57FFFF 2B8000–2BFFFF SA88 1 0 1 1 0 0 0 64/32 580000–58FFFF 2C0000–2C7FFF SA89 1 0 1 1 0 0 1 64/32 590000–59FFFF 2C8000–2CFFFF SA90 1 0 1 1 0 1 0 64/32 5A0000–5AFFFF 2D0000–2D7FFF SA91 1 0 1 1 0 1 1 64/32 5B0000–5BFFFF 2D8000–2DFFFF SA92 1 0 1 1 1 0 0 64/32 5C0000–5CFFFF 2E0000–2E7FFF SA93 1 0 1 1 1 0 1 64/32 5D0000–5DFFFF 2E8000–2EFFFF SA94 1 0 1 1 1 1 0 64/32 5E0000–5EFFFF 2F0000–2F7FFF January 23, 2006 Am29LV6402M 13 Table 2. Sector Address Table (Continued) A21–A15 Sector 14 Sector Size (Kwords/Kdoublewords) 16-bit Address Range (in hexadecimal) 32-bit Address Range (in hexadecimal) SA95 1 0 1 1 1 1 1 64/32 5F0000–5FFFFF 2F8000–2FFFFF SA96 1 1 0 0 0 0 0 64/32 600000–60FFFF 300000–307FFF SA97 1 1 0 0 0 0 1 64/32 610000–61FFFF 308000–30FFFF SA98 1 1 0 0 0 1 0 64/32 620000–62FFFF 310000–317FFF SA99 1 1 0 0 0 1 1 64/32 630000–63FFFF 318000–31FFFF SA100 1 1 0 0 1 0 0 64/32 640000–64FFFF 320000–327FFF SA101 1 1 0 0 1 0 1 64/32 650000–65FFFF 328000–32FFFF SA102 1 1 0 0 1 1 0 64/32 660000–66FFFF 330000–337FFF SA103 1 1 0 0 1 1 1 64/32 670000–67FFFF 338000–33FFFF SA104 1 1 0 1 0 0 0 64/32 680000–68FFFF 340000–347FFF SA105 1 1 0 1 0 0 1 64/32 690000–69FFFF 348000–34FFFF SA106 1 1 0 1 0 1 0 64/32 6A0000–6AFFFF 350000–357FFF SA107 1 1 0 1 0 1 1 64/32 6B0000–6BFFFF 358000–35FFFF SA108 1 1 0 1 1 0 0 64/32 6C0000–6CFFFF 360000–367FFF SA109 1 1 0 1 1 0 1 64/32 6D0000–6DFFFF 368000–36FFFF SA110 1 1 0 1 1 1 0 64/32 6E0000–6EFFFF 370000–377FFF SA111 1 1 0 1 1 1 1 64/32 6F0000–6FFFFF 378000–37FFFF SA112 1 1 1 0 0 0 0 64/32 700000–70FFFF 380000–387FFF SA113 1 1 1 0 0 0 1 64/32 710000–71FFFF 388000–38FFFF SA114 1 1 1 0 0 1 0 64/32 720000–72FFFF 390000–397FFF SA115 1 1 1 0 0 1 1 64/32 730000–73FFFF 398000–39FFFF SA116 1 1 1 0 1 0 0 64/32 740000–74FFFF 3A0000–3A7FFF SA117 1 1 1 0 1 0 1 64/32 750000–75FFFF 3A8000–3AFFFF SA118 1 1 1 0 1 1 0 64/32 760000–76FFFF 3B0000–3B7FFF SA119 1 1 1 0 1 1 1 64/32 770000–77FFFF 3B8000–3BFFFF SA120 1 1 1 1 0 0 0 64/32 780000–78FFFF 3C0000–3C7FFF SA121 1 1 1 1 0 0 1 64/32 790000–79FFFF 3C8000–3CFFFF SA122 1 1 1 1 0 1 0 64/32 7A0000–7AFFFF 3D0000–3D7FFF SA123 1 1 1 1 0 1 1 64/32 7B0000–7BFFFF 3D8000–3DFFFF SA124 1 1 1 1 1 0 0 64/32 7C0000–7CFFFF 3E0000–3E7FFF SA125 1 1 1 1 1 0 1 64/32 7D0000–7DFFFF 3E8000–3EFFFF SA126 1 1 1 1 1 1 0 64/32 7E0000–7EFFFF 3F0000–3F7FFF SA127 1 1 1 1 1 1 1 64/32 7F0000–7FFFFF 3F8000–3FFFFF Am29LV6402M January 23, 2006 Autoselect Mode In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 2). Table 3 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Tables 10 and 11. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6, A3, A2, A1, and A0 must be as shown in Table 3. Table 3. CE# Manufacturer ID: AMD L Device ID Description OE# WE# L H Autoselect Codes, (High Voltage Method) A21 A14 to to A15 A10 X A8 to A7 A6 A5 to A4 A3 to A2 A1 A0 X VID X L X L L L 00 X 01h L L H 22 X 7Eh X VID Cycle 1 Cycle 2 L L H X DQ23 to DQ16 A9 X L X Cycle 3 WORD# WORD# = VIH = VIL DQ7 to DQ0 H H L 22 X 0Ch H H H 22 X 01h Sector Protection Verification L L H SA X VID X L X L H L X X 01h (protected), 00h (unprotected) SecSi Sector Indicator Bit (DQ7), WP# protects highest address sector L L H X X VID X L X L H H X X 98h (factory locked), 18h (not factory locked) SecSi Sector Indicator Bit (DQ7), WP# protects lowest address sector L L H X X VID X L X L H H X X 88h (factory locked), 08h (not factory locked) Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. January 23, 2006 Am29LV6402M 15 Sector Group Protection and Unprotection Table 4. Sector Group Protection/Unprotection Address Table The hardware sector group protection feature disables both program and erase operations in any sector group. In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Table 4). The hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. Sector group protection/unprotection can be implemented via two methods. Sector Group A21–A15 SA0 0000000 SA1 0000001 SA2 0000010 SA3 0000011 SA4–SA7 00001xx SA8–SA11 00010xx SA12–SA15 00011xx Sector protection/unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group unprotect write cycle. SA16–SA19 00100xx SA20–SA23 00101xx SA24–SA27 00110xx SA28–SA31 00111xx SA32–SA35 01000xx SA36–SA39 01001xx SA40–SA43 01010xx SA44–SA47 01011xx SA48–SA51 01100xx SA52–SA55 01101xx SA56–SA59 01110xx SA60–SA63 01111xx SA64–SA67 10000xx SA68–SA71 10001xx SA72–SA75 10010xx SA76–SA79 10011xx SA80–SA83 10100xx SA84–SA87 10101xx SA88–SA91 10110xx SA92–SA95 10111xx SA96–SA99 11000xx SA100–SA103 11001xx SA104–SA107 11010xx SA108–SA111 11011xx SA112–SA115 11100xx SA116–SA119 11101xx The device is shipped with all sector groups unprotected. AMD offers the option of programming and protecting sector groups at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector group is protected or unprotected. See the Autoselect Mode section for details. 16 Am29LV6402M SA120–SA123 11110xx SA124 1111100 SA125 1111101 SA126 1111110 SA127 1111111 January 23, 2006 Write Protect (WP#) The Write Protect function provides a hardware method of protecting the first or last sector without using VID. Write Protect is one of two functions provided by the WP#/ACC input. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first or last sector independently of whether those sectors were protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. See the table in “DC Characteristics”. START RESET# = VID (Note 1) If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the first or last sector was previously set to be protected or unprotected using the method described in “Sector Group Protection and Unprotection”. Note that WP# has an internal pullup; when unconnected, WP# is at VIH. Perform Erase or Program Operations RESET# = VIH Temporary Sector Group Unprotect Note: In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Figure 5). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing diagrams, for this feature. Temporary Sector Group Unprotect Completed (Note 2) Notes: 1. All protected sector groups unprotected (If WP# = VIL, the first or last sector will remain protected). 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Operation January 23, 2006 Am29LV6402M 17 START START PLSCNT = 1 RESET# = VID Wait 1 μs Temporary Sector Group Unprotect Mode No PLSCNT = 1 Protect all sector groups: The indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address RESET# = VID Wait 1 μs First Write Cycle = 60h? First Write Cycle = 60h? Temporary Sector Group Unprotect Mode Yes Yes Set up sector group address No Sector Group Protect: Write 60h to sector group address with A6 = 0, A1 = 1, A0 = 0 All sector groups protected? Yes Set up first sector group address Sector Group Unprotect: Write 60h to sector group address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT No Verify Sector Group Protect: Write 40h to sector group address twith A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Read from sector group address with A6 = 0, A1 = 1, A0 = 0 Wait 15 ms Verify Sector Group Unprotect: Write 40h to sector group address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Read from sector group address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Yes No Yes Device failed Protect another sector group? Yes PLSCNT = 1000? No Yes Remove VID from RESET# Device failed Write reset command Sector Group Protect Algorithm Set up next sector group address No Data = 00h? Yes Last sector group verified? No Yes Sector Group Protect complete Sector Group Unprotect Algorithm Remove VID from RESET# Write reset command Sector Group Unprotect complete Figure 2. 18 In-System Sector Group Protect/Unprotect Algorithms Am29LV6402M January 23, 2006 SecSi (Secured Silicon) Sector Flash Memory Region Factory Locked: SecSi Sector Programmed and Protected At the Factory The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 128 doublewords/256 words in length, and uses SecSi Sector Indicator Bits (DQ7 and DQ15) to indicate whether or not the SecSi Sector is locked when shipped from the factory. These bits are permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. In devices with an ESN, the SecSi Sector is protected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. A factory locked device has an 8-doubleword/16-word random ESN at addresses 000000h–000007h. AMD offers the device with the SecSi Sector either factor y locke d or custom er lockable. The factory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bits permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to program the sector after receiving the device. The customer-lockable version also has the SecSi Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bits prevent customer-lockable devices from being used to replace devices that are factory locked. The SecSi sector address space in this device is allocated as follows: Table 5. SecSi Sector Address Range x32 x16 000000h– 000007h 000000h– 00000Fh 000008h– 00007Fh 000010h– 0000FFh SecSi Sector Contents Standard Factory Locked ExpressFlash Factory Locked ESN ESN or determined by customer Unavailable Determined by customer Customer Lockable Determined by customer The system accesses the SecSi Sector through a command sequence (see “Enter SecSi Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to sector SA0. January 23, 2006 Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory As an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the 128-doubleword/256 word SecSi sector. The system may program the SecSi Sector using the write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See To reduce power consumption read Lower Byte only.. Programming and protecting the SecSi Sector must be used with caution since, once protected, there is no procedure available for unprotecting the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the SecSi Sector without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ To verify the protect/unprotect status of the SecSi Sector, follow the algorithm shown in Figure 3. Once the SecSi Sector is programmed, locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing within the remainder of the array. Am29LV6402M 19 caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. START RESET# = VIH IH or VID ID Wait 1 ms Write 60h to any address Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Figure 3. If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when V CC is greater than VLKO. Remove VIH IH or VID ID from RESET# Write reset command Write Pulse “Glitch” Protection SecSi Sector Protect Verify complete Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. SecSi Sector Protect Verify Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Tables 10 and 11 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses 20 given in Tables 6–9. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 6–9. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an AMD representative for copies of these documents. Am29LV6402M January 23, 2006 Table 6. CFI Query Identification String Addresses (x32) Data Description 10h 11h 12h 00005151h 00005252h 00005959h Query Unique ASCII string “QRY” 13h 14h 00000202h 00000000h Primary OEM Command Set 15h 16h 00004040h 00000000h Address for Primary Extended Table 17h 18h 00000000h 00000000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 00000000h 00000000h Address for Alternate OEM Extended Table (00h = none exists) Table 7. System Interface String Addresses (x16) Data 1Bh 00002727h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 00003636h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 00000000h VPP Min. voltage (00h = no VPP pin present) 1Eh 00000000h VPP Max. voltage (00h = no VPP pin present) 1Fh 00000707h Typical timeout per single byte/word write 2N µs 20h 00000707h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 00000A0Ah Typical timeout per individual block erase 2N ms 22h 00000000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 00000101h Max. timeout for byte/word write 2N times typical 24h 00000505h Max. timeout for buffer write 2N times typical 25h 00000404h Max. timeout per individual block erase 2N times typical 26h 00000000h Max. timeout for full chip erase 2N times typical (00h = not supported) January 23, 2006 Description Am29LV6402M 21 Table 8. Addresses (x16) 22 Device Geometry Definition Data Description N 27h 00001717h Device Size = 2 byte 28h 29h 00000101h 00000000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 00000505h 00000000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 00000101h Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) 2Dh 2Eh 2Fh 30h 00007F7Fh 00000000h 00000000h 00000101h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 00000000h 00000000h 00000000h 00000000h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 00000000h 00000000h 00000000h 00000000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 00000000h 00000000h 00000000h 00000000h Erase Block Region 4 Information (refer to CFI publication 100) Am29LV6402M January 23, 2006 Table 9. Primary Vendor-Specific Extended Query Addresses (x16) Data Description 40h 41h 42h 00005050h 00005252h 00004949h Query-unique ASCII string “PRI” 43h 00003131h Major version number, ASCII 44h 00003333h Minor version number, ASCII 45h 000000808h Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit 46h 000000202h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 00000101h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 00000101h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 00000404h Sector Protect/Unprotect scheme 04 = 29LV800 mode 4Ah 00000000h Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank 4Bh 00000000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 00000101h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 4Dh 0000B5B5h 4Eh 0000C5C5h 4Fh 00000404h/ 00000505h 50h 00000101h ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP# protect Program Suspend 00h = Not Supported, 01h = Supported Note:To reduce power consumption read Lower Byte only. January 23, 2006 Am29LV6402M 23 COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Tables 10 and 11 define the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 or DQ13 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram. Reset Command Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to 24 the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. If DQ5 or DQ13 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Note that if DQ1 or DQ9 goes high during a Write Buffer Programming operation, the system must write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. Table 11 shows the address and data requirements. This method is an alternative to that shown in Table 3, which is intended for PROM programmers and requires V ID on address pin A9. The autoselect command sequence may be written to an address that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence: ■ A read cycle at address XX00h returns the manufacturer code. ■ Three read cycles at addresses 01h, 0Eh, and 0Fh return the device code. ■ A read cycle to an address containing a sector address (SA), and the address 02h on A7–A0 in doubleword mode returns 0101h if the sector is protected, or 0000h if it is unprotected. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend). Am29LV6402M January 23, 2006 Enter SecSi Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing an 8-doubleword/16-word random Electronic Serial Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector command sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal operation. Tables 10 and 11 show the address and data requirements for both command sequences. See also “SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Doubleword/Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Tables 10 and 11 show the address and data requirements for the word program command sequence. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 and DQ15 or DQ6 and DQ14. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause the device to set DQ5 and/or DQ13 = 1, or cause the DQ7 and/or DQ15, and DQ6 and/or DQ14 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the stan- January 23, 2006 dard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 2020h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Tables 10 and 11 show the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 9090h. The second cycle must contain the data 00h. The device then returns to the read mode. Write Buffer Programming Write Buffer Programming allows the system write to a maximum of 16 doublewords/32 words in one programming operation. This results in faster effective programming time than the standard programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming will occur. The fourth cycle writes the sector address and the number of word locations, minus one, to be programmed. For example, if the system will program 6 unique address locations, then 0505h should be written to the device. This tells the device how many write buffer addresses will be loaded with data and therefore when to expect the Program Buffer to Flash command. The number of locations to program cannot exceed the size of the write buffer or the operation will abort. The fifth cycle writes the first address location and data to be programmed. The write-buffer-page is selected by address bits A23–A4. All subsequent add r e s s / d a t a p a i r s m u s t fa l l w i t h i n t h e selected-write-buffer-page. The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be loaded in any order. The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple write-buffer pages. This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts Am29LV6402M 25 to load programming data outside of the selected write-buffer page, the operation will abort. Starting Address during the write buffer data loading stage of the operation. Note that if a Write Buffer address location is loaded multiple times, the address/data pair counter will be decremented for every data load operation. The host s y s t e m mu s t t h e r e fo r e a c c o u n t fo r l o a d i n g a write-buffer location more than once. The counter decrements for each data load operation, not for each unique write-buffer-address location. Note also that if an address location is loaded more than once into the buffer, the final data loaded for that address will be programmed. ■ Write data other than the Confirm Command after the specified number of data load cycles. Once the specified number of write buffer locations have been loaded, the system must then write the Program Buffer to Flash command at the sector address. Any other address and data combination aborts the Write Buffer Programming operation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into the write buffer. DQ7 and DQ15, DQ6 and DQ14, DQ5 and DQ13, and DQ1 and DQ9 should be monitored to determine the device status during Write Buffer Programming. The write-buffer programming operation can be suspended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command. The Write Buffer Programming Sequence can be aborted in the following ways: ■ Load a value that is greater than the page buffer size during the Number of Locations to Program step. ■ Write to an address in a sector different than the one specified during the Write-Buffer-Load command. ■ Write an Address/Data pair to a different write-buffer-page than the one selected by the 26 The abort condition is indicated by DQ1 and DQ9 = 1, DQ7 and DQ15 = DATA# (for the last address location loaded), DQ6 and DQ14 = toggle, and DQ5 and DQ13 =0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for the next operation. Note that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is required when using Write-Buffer-Programming features in Unlock Bypass mode. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause the device to set DQ5 and/or DQ13= 1, or cause the DQ7 and/or DQ15 and DQ6 and/or DQ14 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Accelerated Program The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# has an internal pullup; when unconnected, WP# is at VIH. Figure 5 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Am29LV6402M January 23, 2006 Write “Write to Buffer” command and Sector Address Part of “Write to Buffer” Command Sequence Write number of addresses to program minus 1(WC) and Sector Address Write first address/data Yes WC = 0 ? No Write to a different sector address Abort Write to Buffer Operation? Yes Write to buffer ABORTED. Must write “Write-to-buffer Abort Reset” command sequence to return to read mode. No (Note 1) Write next address/data pair WC = WC - 1 Write program buffer to flash sector address Notes: Read DQ7 - DQ0 at Last Loaded Address When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses must fall within the selected Write-Buffer Page. 2. DQ7 and DQ15 may change simultaneously with DQ5 and DQ13. Therefore, DQ7 and DQ15 should be verified. 3. If this flowchart location was reached because DQ5 and DQ13 = “1”, then the device FAILED. If this flowchart location was reached because DQ1= “1”, then the Write to Buffer operation was ABORTED. In either case, the proper reset command must be written before the device can begin another operation. If DQ1 and DQ9 =1, write the Write-Buffer-Programming-Abort-Reset command. if DQ5 and DQ13 =1, write the Reset command. 4. See Tables 10 and 11 for command sequences required for write buffer programming. Yes DQ7 = Data? No 1. No No DQ1 = 1? DQ5 = 1? Yes Yes Read DQ7 - DQ0 with address = Last Loaded Address (Note 2) DQ7 = Data? Yes No (Note 3) FAIL or ABORT Figure 4. January 23, 2006 PASS Write Buffer Programming Operation Am29LV6402M 27 user must use the proper command sequences to enter and exit this region. The system may also write the autoselect command sequence when the device is in the Program Suspend mode. The system can read as many autoselect codes as required. When the device exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence for more information. START Write Program Command Sequence After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 and DQ15 or DQ6 and DQ14 status bits, just as in the standard program operation. See Write Operation Status for more information. Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? The system must write the Program Resume command (address bits are don’t care) to exit the Program Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be written after the device has resume programming. Yes Program Operation or Write-to-Buffer Sequence in Progress Programming Completed Note: See Tables 10 and 11 for program command sequence. Figure 5. Write address/data XXXh/B0h Program Operation Write Program Suspend Command Sequence Command is also valid for Erase-suspended-program operations Wait 15 µs Program Suspend/Program Resume Command Sequence The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer programming operation so that data can be read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 15 µs max (5 µs typical) and updates the status bits. Addresses are not required when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the SecSi Sector area (One-time Program area), then 28 Read data as required No Autoselect and SecSi Sector read operations are also allowed Data cannot be read from erase- or program-suspended sectors Done reading? Yes Write address/data XXXh/30h Write Program Resume Command Sequence Device reverts to operation prior to Program Suspend Figure 6. Am29LV6402M Program Suspend/Program Resume January 23, 2006 Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Tables 10 and 11 show the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 and DQ15, DQ6 and DQ14, or DQ2 and DQ10. Refer to the Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 11 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 January 23, 2006 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 and DQ11 to determine if the sector erase timer has timed out (See the section on DQ3 and DQ11: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing sector. The system can determine the status of the erase operation by reading DQ7 and DQ15, DQ6 and DQ14, or DQ2 and DQ10 in the erasing sector. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 19 section for timing diagrams. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a typical of 5 µs (maximum of 20 µs) to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Am29LV6402M 29 After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ15–DQ0. The system can use DQ7 and DQ15, or DQ6 and DQ14 and DQ2 and DQ10 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 and DQ15 or DQ6 and DQ14 status bits, just as in the standard word program operation. Refer to the Write Operation Status section for more information. No Data = FFh? Yes In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Erasure Completed Notes: 1. See Tables 10 and 11 for program command sequence. 2. See the section on DQ3 and DQ10 for information on the sector erase timer. Figure 7. 30 Embedded Erase algorithm in progress Am29LV6402M Erase Operation January 23, 2006 Command Definitions Table 10. Read (Note 6) Autoselect (Note 8) Reset (Note 7) Bus Cycles (Notes 2–5) Cycles Command Sequence (Note 1) Command Definitions (x32 Mode, WORD# = VIH) Addr Data 1 RA RD First Second Third Fourth Fifth Addr Data Addr Data Addr Data 1 XXX F0F0 Manufacturer ID 4 555 AAAA 2AA 5555 555 9090 X00 00000101 Device ID (Note 9) 6 555 AAAA 2AA 5555 555 9090 X01 2222 7E7E SecSiTM Sector Factory Protect (Note 10) 4 555 AAAA 2AA 5555 555 9090 X03 (Note 10) Sector Protect Verify (Note 12) 4 555 AAAA 2AA 5555 555 9090 (SA)X02 Sixth Addr Data Addr Data X0E 2222 0C0C X0F 2222 0101 PA PD WBL PD 0000/ 0101 Enter SecSi Sector Region 3 555 AAAA 2AA 5555 555 8888 Exit SecSi Sector Region 4 555 AAAA 2AA 5555 555 9090 XXX Program 4 555 AAAA 2AA 5555 555 A0A0 PA PD Write to Buffer (Note 11) 3 555 AAAA 2AA 5555 SA 2525 SA DWC Program Buffer to Flash 1 SA 2929 Write to Buffer Abort Reset (Note 13) 3 555 AAAA 2AA 5555 555 F0F0 Unlock Bypass 3 555 AAAA 2AA 5555 555 2020 Unlock Bypass Program (Note 14) 2 XXX A0A0 PA PD Unlock Bypass Reset (Note 15) 2 XXX 9090 XXX 0000 Chip Erase 6 555 AAAA 2AA 5555 555 8080 555 AAAA 2AA 5555 555 1010 Sector Erase 6 555 AAAA 2AA 5555 555 8080 555 AAAA 2AA 5555 SA 3030 Program/Erase Suspend (Note 16) 1 XXX B0B0 Program/Erase Resume (Note 17) 1 XXX 3030 CFI Query (Note 18) 1 55 9898 Legend: X = Don’t care RA = Read Address of the memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ31–DQ16 are don’t care in command sequences, except for RD, PD, and DWC. 5. Unless otherwise noted, address bits A21–A11 are don’t cares. 6. No unlock or command cycles required when device is in read mode. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when the device is in the autoselect mode, or if DQ5 and/or DQ13 goes high while the device is providing status information. 8. The fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ31–DQ16 are don’t care. See the Autoselect Command Sequence section for more information. 9. The device ID must be read in three cycles. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within the same write buffer page as PA. DWC = Doubleword Count. Number of write buffer locations to load minus 1. 11. The total number of cycles in the command sequence is determined by the number of doublewords written to the write buffer. The maximum number of cycles in the command sequence is 21. 12. The data is 0000h for an unprotected sector and 0101h for a protected sector. 13. Command sequence resets device for next command after aborted write-to-buffer operation. 14. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 15. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 16. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 17. The Erase Resume command is valid only during the Erase Suspend mode. 10. If WP# protects the highest address sector, the data is 9898h for factory locked and 1818h for not factory locked. If WP# protects the lowest address sector, the data is 8888h for factory locked and 0808h for not factor locked. January 23, 2006 0000 18. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV6402M 31 Table 11. Command Definitions (x16 Mode, WORD# = VIL) Cycles Bus Cycles (Notes 2–5) Addr Read (Note 6) 1 RA Reset (Note 7) Autoselect (Note 8) Command Sequence (Note 1) First Data RD Second Addr Data Third Addr Data Fourth Addr Fifth Data 1 XXX F0F0 Manufacturer ID 4 AAA AAAA 555 5555 AAA 9090 X00 0101 Device ID (Note 9) 6 AAA AAAA 555 5555 AAA 9090 X02 7E7E SecSiTM Sector Factory Protect (Note 10) 4 AAA AAAA 555 5555 AAA 9090 X06 (Note 10) Sector Protect Verify (Note 12) 4 AAA AAAA 555 5555 AAA 9090 (SA)X04 Sixth Addr Data Addr Data X1C 0C0C X1E 0101 PD WBL PD 0000/ 0101 Enter SecSi Sector Region 3 AAA AAAA 555 5555 AAA 8888 Exit SecSi Sector Region 4 AAA AAAA 555 5555 AAA 9090 XXX Program 4 AAA AAAA 555 5555 AAA A0A0 PA PD Write to Buffer (Note 11) 3 AAA AAAA 555 5555 SA 2525 SA WC PA Program Buffer to Flash 1 SA 2929 Write to Buffer Abort Reset (Note 13) 3 AAA AAAA 555 5555 AAA F0F0 Unlock Bypass 3 AAA AAAA 555 5555 AAA 2020 Unlock Bypass Program (Note 14) 2 XXX A0A0 PA PD 0000 Unlock Bypass Reset (Note 15) 2 XXX 9090 XXX 0000 Chip Erase 6 AAA AAAA 555 5555 AAA 8080 AAA AAAA 555 5555 AAA 1010 Sector Erase 6 AAA AAAA 555 5555 AAA 8080 AAA AAAA 555 5555 SA 3030 Program/Erase Suspend (Note 16) 1 XXX B0B0 Program/Erase Resume (Note 17) 1 XXX 3030 CFI Query (Note 18) 1 AA 9898 Legend: X = Don’t care RA = Read Address of the memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ31–DQ15 are don’t care in command sequences. 5. Unless otherwise noted, address bits A21–A11 are don’t cares. 6. No unlock or command cycles required when device is in read mode. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when the device is in the autoselect mode, or if DQ5 and/or DQ13goes high while the device is providing status information. 8. The fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ31–DQ16 are don’t care. See the Autoselect Command Sequence section for more information. 9. The device ID must be read in three cycles. 11. The total number of cycles in the command sequence is determined by the number of words written to the write buffer. The maximum number of cycles in the command sequence is 37. 12. The data is 0000h for an unprotected sector group and 0101h for a protected sector group. 13. Command sequence resets device for next command after aborted write-to-buffer operation. 14. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 15. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 16. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 17. The Erase Resume command is valid only during the Erase Suspend mode. 10. If WP# protects the highest address sector, the data is 9898h for factory locked and 1818h for not factory locked. If WP# protects the lowest address sector, the data is 8888h for factory locked and 0808h for not factor locked. 32 SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within the same write buffer page as PA. WC = Word Count. Number of write buffer locations to load minus 1. 18. Command is valid when device is ready to read array data or when device is in autoselect mode. Am29LV6402M January 23, 2006 WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2 and DQ10, DQ3 and DQ11, DQ5 and DQ13, DQ6 and DQ14, and DQ7 and DQ15. Table 12 and the following subsections describe the function of these bits. DQ7 and DQ15 and DQ6 and DQ14 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. pleted the program or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 and DQ14–DQ8 may be still invalid. Valid data on DQ15–DQ0 will appear on successive read cycles. Table 12 shows the outputs for Data# Polling on DQ7 and DQ15. Figure 8 shows the Data# Polling algorithm. Figure 20 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7 and DQ5: Data# Polling START The Data# Polling bit, DQ7 and DQ15, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Read DQ7–DQ0 Addr = VA During the Embedded Program algorithm, the device outputs on DQ7 and DQ15 the complement of the datum programmed to DQ7 and DQ15. This DQ7 and DQ15 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7 and DQ15. The system must provide the program address to read valid status information on DQ7 and DQ15. If a program address falls within a protected sector, Data# Polling on DQ7 and DQ15 is active for approximately 1 µs, then the device returns to the read mode. DQ7 = Data? No No Just prior to the completion of an Embedded Program or Erase operation, DQ7 and DQ15 may change asynchronously with DQ6–DQ0 and DQ14–DQ8 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7 and DQ15. Depending on when the system samples the DQ7 and DQ15 output, it may read the status or valid data. Even if the device has com- January 23, 2006 DQ5 = 1? Yes During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7 and DQ15. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7 and DQ15. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7 and DQ15. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 and DQ15 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 and DQ15 at an address within a protected sector, the status may not be valid. Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 and DQ15 should be rechecked even if DQ5 and/or DQ13 = “1” because DQ7 and DQ15 may change simultaneously with DQ5 and DQ13. Am29LV6402M Figure 8. Data# Polling Algorithm 33 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-suspend-read mode. Table 12 shows the outputs for RY/BY#. DQ6 and DQ14: Toggle Bits I Toggle Bit I on DQ6 and DQ14 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 and DQ14 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 and DQ14 stops toggling. 34 After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 and DQ14 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ14 and DQ2 and DQ10 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 and DQ14 toggle. When the device enters the Erase Suspend mode, DQ6 and DQ14 stop toggling. However, the system must also use DQ2 and DQ10 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 and DQ15 (see the subsection on DQ7 and DQ15: Data# Polling). If a program address falls within a protected sector, DQ6 and DQ14 toggle for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 and DQ14 also toggle during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 12 shows the outputs for Toggle Bit I on DQ6 and DQ14. Figure 9 shows the toggle bit algorithm. Figure 21 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ10 and DQ6 and DQ14 in graphical form. See also the subsection on DQ2 and DQ10: Toggle Bits II. Am29LV6402M January 23, 2006 DQ2 and DQ10: Toggle Bits II The “Toggle Bits II” on DQ2 and DQ10, when used with DQ6 and DQ14, indicate whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bits II are valid after the rising edge of the final WE# pulse in the command sequence. START Read DQ7–DQ0 DQ2 and DQ10 toggle when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 and DQ10 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6 and DQ14, by comparison, indicate whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 12 to compare outputs for DQ2 and DQ10 and DQ6 and DQ14. Read DQ7–DQ0 Toggle Bit = Toggle? No Yes No DQ5 = 1? Figure 9 shows the toggle bit algorithm in flowchart form, and the section “DQ2 and DQ10: Toggle Bits II” explains the algor ithm. See also the RY/BY#: Ready/Busy# subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2 and DQ10 and DQ6 and DQ14 in graphical form. Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? Reading Toggle Bits DQ6 and DQ14/DQ2 and DQ10 No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 and DQ13= “1” because the toggle bit may stop toggling as DQ5 and DQ13 changes to “1.” See the subsections on DQ6 and DQ14 and DQ2 and DQ10 for more information. Figure 9. January 23, 2006 Toggle Bit Algorithm Refer to Figure 9 for the following discussion. Whenever the system initially begins reading toggle bits status, it must read DQ15–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bits are not toggling, the device has completed the program or erase operation. The system can read array data on DQ15–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that one of the toggle bits are still toggling, the system also should note whether the value of DQ5 and DQ13 is high (see the section on DQ5 and DQ13). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 and/or DQ13 went high. If the toggle bits are no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. Am29LV6402M 35 The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 and/or DQ13 has not gone high. The system may continue to monitor the toggle bits and DQ5 and DQ13 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 9). DQ5 and DQ13: Exceeded Timing Limits DQ5 indicates whether the program, erase, or write-to-buffer time has exceeded a specified internal pulse count limit. Under these conditions DQ5 and DQ13 produce a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 and/or DQ13 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 and/or DQ13 produces a “1.” In all these cases, the system must write the reset command to return the device to the reading the array (or to erase-suspend-read if the device was previously in the erase-suspend-program mode). DQ3 and DQ11: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 and DQ11 to deter mine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 and DQ11 switch from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3 and DQ11. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 and DQ15 (Data# Polling) or DQ6 and DQ14 (Toggle Bits I) to ensure that the device has accepted the command sequence, and then read DQ3 and DQ11. If DQ3 and DQ11 are “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 and DQ11 are “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 and DQ11 prior to and following each subsequent sector erase command. If DQ3 and DQ11 are high on the second status check, the last command might not have been accepted. Table 12 shows the status of DQ3 and DQ11 relative to the other status bits. 36 Am29LV6402M January 23, 2006 DQ1: Write-to-Buffer Abort DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 and DQ9 produce a “1”. The system must issue the Table 12. Write-to-Buffer-Abort-Reset command sequence to return the device to reading array data. See Write Buffer Programming section for more details. Write Operation Status DQ7/DQ15 (Note 2) DQ6/DQ14 DQ7/DA15# Toggle 0 Toggle Status Standard Embedded Program Algorithm Mode Embedded Erase Algorithm Program-Suspended Program Program- Sector Suspend Suspend Non-Program Mode Read Suspended Sector Erase-Suspended 1 EraseSector Suspend Erase Non-Erase Read Suspend Suspended Sector Mode Erase-Suspend-Program DQ7/DQ15# (Embedded Program) DQ7/DQ15# Write-to- Busy (Note 3) Buffer Abort (Note 4) DQ7/DQ15# DQ5/ DA13 (Note 1) 0 0 DQ3/ DQ11 N/A 1 DQ2/DQ10 (Note 2) No toggle Toggle DQ1/ DQ9 0 N/A RY/BY# 0 0 Invalid (not allowed) 1 Data 1 No toggle 0 N/A Toggle N/A Data 1 1 Toggle 0 N/A N/A N/A 0 Toggle Toggle 0 0 N/A N/A N/A N/A 0 1 0 0 Notes: 1. DQ5 and DQ13 switch to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits. Refer to the section on DQ5 and DQ13 for more information. 2. DQ7 and DQ15 and DQ2 and DQ10 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. 4. DQ1 and DQ9 switch to ‘1’ when the device has aborted the write-to-buffer operation. January 23, 2006 Am29LV6402M 37 ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . . . . . . . . –55°C to +125°C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V 20 ns +0.8 V –0.5 V –2.0 V A9, OE#, WP#/ACC, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V 20 ns All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Figure 10. Maximum Negative Overshoot Waveform Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. Dur ing voltage transitions, input or I/O pins may overshoot V SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 10. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 11. 2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is –0.5 V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 10. Maximum DC input voltage on pin A9, OE#, WP#/ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. 20 ns 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 11. Maximum Positive Overshoot Waveform 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C Supply Voltages VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0–3.6 V VIO (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . 1.65–3.6 V 4. Operating ranges define those limits between which the functionality of the device is guaranteed. 5. See ordering information for valid VCC/VIO combinations. The I/Os will not operate at 3 V when VIO = 1.8 V 38 Am29LV6402M January 23, 2006 DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description (Notes) Test Conditions ILI Input Load Current (1) VIN = VSS to VCC, VCC = VCC max ILIT A9, ACC Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current (2, 3) CE# = VIL, OE# = VIH, ICC2 VCC Initial Page Read Current (2, 3) CE# = VIL, OE# = VIH ICC3 VCC Intra-Page Read Current (2, 3) CE# = VIL, OE# = VIH ICC4 VCC Active Write Current (3, 4) CE# = VIL, OE# = VIH ICC5 VCC Standby Current (3) ICC6 Typ Max Unit ±2.0 µA 70 µA ±2.0 µA 1 MHz 6 68 5 MHz 26 86 1 MHz 8 100 mA 10 MHz 80 160 mA 10 MHz 6 40 mA 33 MHz 12 80 mA 100 120 mA CE#, RESET# = VCC ± 0.3 V, WP# = VIH 2 10 µA VCC Reset Current (3) RESET# = VSS ± 0.3 V, WP# = VIH 2 10 µA ICC7 Automatic Sleep Mode (3, 5) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V, WP# = VIH 2 10 µA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 1.9 VIO + 0.3 V VHH Voltage for ACC Program Acceleration VCC = 2.7 –3.6 V 11.5 12.5 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 2.7 –3.6 V 11.5 12.5 V VOL 0.4 V Output Low Voltage 0.1 V mA IOL = 4.0 mA, VCC = VCC min IOL = 100 µA, VCC = VCC min VOH Output High Voltage VLKO Low VCC Lock-Out Voltage (6) IOH = –2.0 mA, VCC = VCC min 2.4 IOH = –100 µA, VCC = VCC min VCC – 0.1 2.3 Notes: 1. On the WP#/ACC pin only, the maximum input load current when WP# = VIL is ± 10.0 µA. 2. The ICC current listed is typically less than 4 mA/MHz, with OE# at VIH. 3. Min Maximum ICC specifications are tested with VCC = VCCmax. January 23, 2006 V 2.5 V 4. ICC active while Embedded Erase or Embedded Program is in progress. 5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. 6. Not 100% tested. Am29LV6402M 39 TEST CONDITIONS Table 13. 3.3 V Test Condition 2.7 kΩ Device Under Test CL Test Specifications 6.2 kΩ All Speeds Output Load 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 pF Input Rise and Fall Times 5 ns 0.0–3.0 V Input timing measurement reference levels (See Note) 1.5 V Output timing measurement reference levels 0.5 VIO V Input Pulse Levels Note: Diodes are IN3064 or equivalent. Figure 12. Unit Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 3.0 V Input Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 1.5 V Measurement Level 0.5 VIO V Output 0.0 V Figure 13. Input Waveforms and Measurement Levels 40 Am29LV6402M January 23, 2006 AC CHARACTERISTICS Read-Only Operations Parameter Speed Options JEDEC Std. Description Test Setup tAVAV tRC tAVQV tACC Address to Output Delay tELQV tCE 100R 110R Unit Min 100 110 ns CE#, OE# = VIL Max 100 110 ns Max 100 110 ns Max 30 30 ns 30 30 ns Read Cycle Time (Note 1) Chip Enable to Output Delay OE# = VIL tPACC Page Access Time tGLQV tOE Output Enable to Output Delay Max tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 25 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 25 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Min 0 ns tOEH Read Output Enable Hold Toggle and Time (Note 1) Data# Polling Min 10 ns Notes: 1. Not 100% tested. 2. See Figure 12 and Table 13 for test specifications. 3. AC Specifications are tested with VIO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 14. January 23, 2006 Read Operation Timings Am29LV6402M 41 AC CHARACTERISTICS Same Page A21-A2 A1-A0* Aa Ab tPACC tACC Data Bus Qa Ad Ac tPACC Qb tPACC Qc Qd CE# OE# * Figure shows doubleword mode. Addresses are A1–A-1 for word mode. Figure 15. 42 Page Read Timings Am29LV6402M January 23, 2006 AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std. Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 µs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 µs 1. Not 100% tested 2. AC Specifications are tested with VIO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 16. January 23, 2006 Reset Timings Am29LV6402M 43 AC CHARACTERISTICS Erase and Program Operations Speed Options Parameter JEDEC Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 45 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Per Word Typ 11 µs Per Doubleword Typ 22 µs Per Word Typ 8.8 µs Per Doubleword Typ 17.6 µs Word Typ 100 µs Doubleword Typ 100 µs Word Typ 90 µs Doubleword Typ 90 µs tWLAX Effective Write Buffer Program Operation (Notes 2, 4) tWHWH1 tWHWH1 Accelerated Effective Write Buffer Program Operation (Notes 2, 4) Single Doubleword/Word Program Operation (Note 2) Accelerated Single Doubleword/Word Programming Operation (Note 2) tWHWH2 100R 110R Unit 100 110 ns tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 doublewords/1–32 words programmed. 4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation. 5. AC Specifications are tested with VIO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC. 44 Am29LV6402M January 23, 2006 AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17. Program Operation Timings VHH ACC VIL or VIH VIL or VIH tVHH Figure 18. January 23, 2006 tVHH Accelerated Program Timing Diagram Am29LV6402M 45 AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”). 2. These waveforms are for the doubleword mode. Figure 19. 46 Chip/Sector Erase Operation Timings Am29LV6402M January 23, 2006 AC CHARACTERISTICS tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Data# Polling Timings (During Embedded Algorithms) January 23, 2006 Am29LV6402M 47 AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6 and DQ14. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 21. Enter Embedded Erasing WE# Erase Suspend Erase Toggle Bit Timings (During Embedded Algorithms) Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6, DQ14 DQ2, DQ10 Note: DQ2 and DQ10 toggle only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ1- and DQ6 and DQ14. Figure 22. DQ2 vs. DQ6 48 Am29LV6402M January 23, 2006 AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description tVIDR VID Rise and Fall Time (See Note) tRSP RESET# Setup Time for Temporary Sector Unprotect All Speed Options Unit Min 500 ns Min 4 µs 1. Not 100% tested. 2. AC Specifications are tested with VIO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC. VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# Figure 23. January 23, 2006 Temporary Sector Group Unprotect Timing Diagram Am29LV6402M 49 AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect or Unprotect Data 60h 60h Valid* Verify 40h Status Sector Group Protect: 150 µs, Sector Group Unprotect: 15 ms 1 µs CE# WE# OE# * For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 24. 50 Sector Group Protect and Unprotect Timing Diagram Am29LV6402M January 23, 2006 AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Speed Options Parameter JEDEC Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 45 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 45 ns tEHEL tCPH CE# Pulse Width High Min 30 ns Write Buffer Program Operation (Notes 2, 3) Typ 352 µs Per Word Typ 11 µs Per Doubleword Typ 22 µs Per Word Typ 8.8 µs Per Doubleword Typ 17.6 µs Word Typ 100 µs Doubleword Typ 100 µs Word Typ 90 µs Doubleword Typ 90 µs Typ 0.5 sec Effective Write Buffer Program Operation (Notes 2, 4) tWHWH1 tWHWH1 Effective Accelerated Write Buffer Program Operation (Notes 2, 4) Single Doubleword/Word Program Operation (Note 2) Accelerated Single Doubleword/Word Programming Operation (Note 2) tWHWH2 tWHWH2 Sector Erase Operation (Note 2) 100R 110R Unit 100 110 ns Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 3. For 1–16 doublewords/1–32 words programmed. 4. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation. 5. AC Specifications are tested with VIO=VCC. Please contact the factory for information on using the device with VIO ≠ VCC. January 23, 2006 Am29LV6402M 51 AC CHARACTERISTICS PA for program SA for sector erase 555 for chip erase 555 for program 2AA for erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# and DQ15# are the complement of the data written to the device. DOUT is the data written to the device. 4. Waveforms are for the word mode. Figure 25. Alternate CE# Controlled Write (Erase/Program) Operation Timings LATCHUP CHARACTERISTICS Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. 52 Am29LV6402M January 23, 2006 ERASE AND PROGRAMMING PERFORMANCE Parameter Typ (Note 1) Max (Note 2) Unit Comments Excludes 00h programming prior to erasure (Note 5) Sector Erase Time 0.5 15 sec Chip Erase Time 32 128 sec Word 100 TBD µs Doubleword 100 TBD µs Word 90 TBD µs Doubleword 90 TBD µs 352 TBD µs Per Word 11 TBD µs Per Doubleword 22 TBD µs 282 TBD µs Per Word 8.8 TBD µs Per Doubleword 17.6 TBD µs 92 TBD sec Single Doubleword/Word Program Time (Note 3) Accelerated Single Doubleword/ Word Program Time Total Write Buffer Program Time (Note 4) Effective Write Buffer Program Time (Note 3) Total Accelerated Write Buffer Program Time (Note 4) Effective Write Buffer Accelerated Program Time (Note 3) Chip Program Time Excludes system level overhead (Note 6) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 10,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles. 3. Effective write buffer specification is based upon a 16-doubleword/32-word write buffer operation. 4. For 1–16 doublewords or 1-32 words programmed in a single write buffer programming operation. 5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 10 and 11 for further information on command definitions. TSOP PIN AND BGA PACKAGE CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 BGA TBD TBD pF COUT Output Capacitance VOUT = 0 BGA TBD TBD pF CIN2 Control Pin Capacitance VIN = 0 BGA TBD TBD pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Minimum Pattern Data Retention Time January 23, 2006 Am29LV6402M 53 PHYSICAL DIMENSIONS LSB080—80-Ball Fortified Ball Grid Array (Fortified BGA) 13 x 11 mm Package D1 A D 0.20 C eD (2X) 8 7 SE 6 7 5 4 E E1 3 eE 2 1 K INDEX MARK PIN A1 CORNER B 10 TOP VIEW J H G F E D C B A PIN A1 CORNER 7 SD 0.20 C (2X) BOTTOM VIEW 0.25 C A A2 A1 80X C SIDE VIEW 6 0.20 C b 0.25 M C A B 0.10 M C NOTES: PACKAGE LSB 080 JEDEC N/A DxE 13.00 mm x 11.00 mm PACKAGE SYMBOL MIN NOM MAX A --- --- 1.60 A1 0.40 --- --- A2 1.00 --- 1.11 NOTE PROFILE E 11.00 BSC. BODY SIZE D1 9.00 BSC. MATRIX FOOTPRINT E1 7.00 BSC. MATRIX FOOTPRINT MD 10 MATRIX SIZE D DIRECTION ME 8 MATRIX SIZE E DIRECTION 80 0.60 ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. BODY SIZE 0.50 2. BODY THICKNESS 13.00 BSC. n DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. BALL HEIGHT D φb 1. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. BALL COUNT 0.70 WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. BALL DIAMETER WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 eE 1.00 BSC. BALL PITCH eD 1.00 BSC BALL PITCH SD / SE 0.50 BSC. SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALLS 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. N/A 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3265 \ 16-038.15a 54 Am29LV6402M January 23, 2006 REVISION SUMMARY Revision A (January 20, 2003) Initial release. Revision B (September 17, 2003) Global Changed data sheet status from Advance Information to Preliminary. Changed values for the following parameters: Write Buffer Program Operation, Effective Write Buffer Program Operation, Accelerated Effective Write Buffer Program Operation, Sector Erase Operation, Single Doubleword/Word Program Operation, Accelerated Single Doubleword/Word Program Operation (the phrase “Single Doubleword/Word” was added to the last two parameter titles). Erase and Programming Performance Distinctive Characteristics Changed description of device erase cycle endurance. Changed typical sector erase time, typical write buffer programming time, and typical active read current specification. Customer Lockable: SecSi Sector NOT Programmed or Protected at the factory. Added second bullet, SecSi sector-protect verify text and figure 3. Erase Suspend/Erase Resume Commands Deleted reference to erase-suspended sector address requirement for commands. Tables 10 and 11, Command Definitions Corrected addresses for Erase Suspend and Erase Resume to “XXX” (don’t care). DC Characteristics Changed typical and maximum values for ICC1, ICC2, and ICC3. Values for different frequencies were added to ICC2 and ICC3. AC Characteristics Erase and Program Operations table; Alternate CE# Controlled Erase and Program Operations table. Changed typical sector erase time. Changed typical chip erase time and added maximum erase time. Replaced TBDs for all typical specifications with actual values. Added phrase “Single Doubleword/Word” to Program Time and Accelerated Program Time parameters titles. Added Total Write Buffer Program Time and Total Accelerated Write Buffer Program Time parameters to table. Changed device endurance in Note 1 to 10,000 cycles. Changed write buffer operation size in Note 3. Note 4 now refers to write buffer programming instead of chip programming. Deleted Note 7. Revision B+1 (January 23, 2006) This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedesS29LV6402M and is the factory-recomm e n d e d m i g r a t i o n p a t h . P l e a s e r e fe r t o t h e S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. Updated migration statement on cover page and first page of data sheet. Updated trademarks. Trademarks Copyright © 2005-2006 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. January 23, 2006 Am29LV6402M 55