LRC LMBTA14LT3G Darlington amplifier transistors rohs requirements. Datasheet

LESHAN RADIO COMPANY, LTD.
Darlington Amplifier Transistors
z We declare that the material of product
compliance with RoHS requirements.
LMBTA13LT1G
LMBTA14LT1G
ORDERING INFORMATION
Device
Marking
Shipping
LMBTA13LT1G
1M
LMBTA14LT1G
LMBTA13LT3G
1N
3000/Tape & Reel
3000/Tape & Reel
1M
LMBTA14LT3G
1N
10000/Tape & Reel
10000/Tape & Reel
3
1
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CES
30
Vdc
Collector–Base Voltage
V CBO
30
Vdc
Emitter–Base Voltage
V EBO
10
Vdc
IC
300
mAdc
Collector Current — Continuous
SOT–23
COLLECTOR
3
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
R θJA
556
°C/W
PD
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
R θJA
T J , T stg
2
EMITTER
DEVICE MARKING
LMBTA13LT1G = 1M; LMBTA14 LT1G = 1N;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V
(BR)CEO
30
—
Vdc
I CBO
—
100
nAdc
I EBO
—
100
nAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 100 µAdc, V BE = 0)
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (3)
DC Current Gain
(I C = 10 mAdc, V CE = 5.0 Vdc)
hFE
LMBTA13
LMBTA14
LMBTA13
LMBTA14
(I C = 100mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 100 mAdc, I B = 0.1 mAdc)
Base–Emitter On Voltage
(I C = 100mAdc, V CE = 5.0Vdc)
––
5,000
10,000
10,000
20,000
—
—
—
—
VCE(sat)
––
1.5
Vdc
V BE
—
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
fT
125
—
MHz
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4. f T = |h f e | *f test .
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
2.0
500
BANDWIDTH = 1.0 Hz
1.0
0.7
S
200
I n , NOISE CURRENT (pA)
e n , NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
R ~
~0
100
10 µA
50
100µA
20
IC=1.0mA
10
0.5
IC=1.0mA
0.3
0.2
100µA
0.1
0.07
0.05
10µA
0.03
5.0
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
0.02
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k 20k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
50k 100k
500
BANDWIDTH = 10 Hz TO 15.7 kHz
NF, NOISE FIGURE (dB)
V T, TOTAL WIDEBAND NOISE VOLTAGE (nV)
10
BANDWIDTH = 10 Hz TO 15.7 kHz
100
I C = 10 µA
70
50
100 µA
30
20
1.0 mA
2.0
10 µA
100
50
100 µA
20
I C = 1.0 mA
10
10
1.0
200
5.0
10
20
50
100
200
500
1.0k
5.0
1.0
2.0
5.0
10
20
50
100
200
R S , SOURCE RESISTANCE (kΩ)
R S , SOURCE RESISTANCE (kΩ)
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
500
1.0k
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
SMALL–SIGNAL CHARACTERISTICS
7.0
C ibo
C obo
5.0
3.0
2.0
0.1
0.2
0.4
1.0
1.2
4.0
10
20
40
h FE , DC CURRENT GAIN
70k
25°C
30k
20k
10k
–55°C
V CE= 5.0V
3.0k
2.0k
5.0 7.0
10
20
30
50
70
100
200
300
500
V, VOLTAGE ( VOLTS )
0.4
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
T J= 25°C
2.5
I C = 10mA
50 mA
250mA
500mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1000
I B , BASE CURRENT (µA)
V BE(sat) @ I C /I B = 1000
1.2
V BE(on) @ V CE = 5.0 V
1.0
V CE(sat) @ I C /I B = 1000
0.6
10
20
30
50
70
100 200 300
C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
500
500
3.0
Figure 9. Collector Saturation Region
1.4
7.0
0.6
Figure 8. DC Current Gain
T J = 25°C
5.0
0.8
I C , COLLECTOR CURRENT (mA)
1.6
0.8
1.0
I C , COLLECTOR CURRENT (mA)
100k
5.0k
T J = 25°C
Figure 7. High Frequency Current Gain
T J= 125°C
7.0k
2.0
Figure 6. Capacitance
200k
50k
V CE = 5.0 V
f = 100 MHz
V R, REVERSE VOLTAGE (VOLTS)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
0.04
|h fe |, SMALL– SIGNAL CURRENT GAIN
T J =25°C
10
4.0
R θV , TEMPERATURE COEFFICIENTS (mV/°C)
C, CAPACITANCE (pF)
20
–1.0
*APPLIES FOR I C /I B <h FE /3.0
–2.0
+25°C TO +125°C
* R θVC for V CE(sat)
–55°C TO +25°C
–3.0
+25°C TO +125°C
–4.0
θ VB for V BE
–5.0
–55°C TO +25°C
–6.0
5.0 7.0
10
20
30
50
70
100
200
300
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
Rev.O 4/6
500
LESHAN RADIO COMPANY, LTD.
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
LMBTA13LT1G
1.0
0.7
0.5
LMBTA14LT1G
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
SINGLE PULSE
0.07
0.05
0.03
Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z
0.02
Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t)
θJC(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
t, TIME (ms)
Figure 12. Thermal Response
I C , COLLECTOR CURRENT (mA)
1.0k
1.0 ms
700
FIGURE A
500
300
T C = 25°C
T A = 25°C
200
tP
100µs
PP
1.0 s
P
P
100
70
50
t
30
CURRENT LIMIT
20
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1
1/f
DUTY CYCLE =t 1 f =
10
0.4
0.6
1.0
2.0
4.0
6.0
10
20
40
t1
tP
PEAK PULSE POWER = P P
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13.Active Region Safe Operating Area
Design Note: Use of Transient Thermal
Resistance Data
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LMBTA13LT1G
LMBTA14LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 6/6
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