Intersil ISL89161FBEAZ High speed, dual channel, 6a, 4.5 to 16vout, power mosfet driver Datasheet

ISL89160, ISL89161, ISL89162
Features
The ISL89160, ISL89162, and ISL89162 are high-speed,
6A, dual channel MOSFET drivers. These parts are
identical to the ISL89163, ISL89164, ISL89165 drivers
but without the enable inputs for each channel.
• Dual output, 6A peak current (sink and source)
Precision thresholds on all logic inputs allow the use of
external RC circuits to generate accurate and stable time
delays on both inputs, INA and INB. This capability is
very useful for dead time control.
At high switching frequencies, these MOSFET drivers
use very little bias current. Separate, non-overlapping
drive circuits are used to drive each CMOS output FET
to prevent shoot-thru currents in the output stage.
The undervoltage lock-out (UV) insures that driver
outputs remain off (low) until VDD is sufficiently high for
correct logic control. This prevents unexpected behaviour
when VDD is being turned on or turned off.
• Typical ON-resistance <1Ω
• Specified Miller plateau drive currents
• Very low thermal impedance (θJC = 3°C/W)
• 3.3V to 5V Logic Inputs with Hysteresis are VDD
tolerant
• Precision threshold inputs for time delays with
external RC components
• ~ 20ns rise and fall time driving a 10nF load.
• Low operating bias currents
• Pb-Free (RoHs Compliant)
Applications
• Synchronous Rectifier (SR) Driver
• Switch mode power supplies
• Motor Drives, Class D amplifiers, UPS, Inverters
• Pulse Transformer driver
• Clock/Line driver
Related Literature
• AN1602 “ISL8916xA, ISL8916xB, ISL8916xC,
Evaluation Board User’s Guide”
• AN1603 “ISL6752_54 Evaluation Board Application
Note”
Typical Application
Temp Stable Logic Thresholds
NC
INA
GND
INB
8
1
7
2
3
EPAD
OUTA
6
5
4
NC
OUTB
4.7µF
INPUT LOGIC THRESHOLDS
(VDC)
3.5
VDD
3.0
2.5
POSITIVE THRESHOLD
2.0
1.5
NEGATIVE THRESHOLD
1.0
0.5
0.0
-45
-20
5
30
55
80
105
130
TEMPERATURE (°C)
November 2, 2010
FN7719.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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ISL89160, ISL89161, ISL89162
High Speed, Dual Channel, 6A, 4.5 to 16VOUT,
Power MOSFET Driver
ISL89160, ISL89161, ISL89162
Block Diagram
VDD
Separate FET drives, with
non-overlapping outputs,
prevent shoot-thru
currents in the output
CMOS FETs resulting with
very low high frequency
operating currents.
For options A and B, the UV
comparator holds off the
outputs until VDD ~> 3.3VDC.
For option C, the UV release
is ~> 6.5V
For clarity, only one
channel is shown
ISL89160
INx
OUTx
10k
ISL89161,
ISL89162
EPAD
GND
For proper thermal and electrical
performance, the EPAD must be
connected to the PCB ground plane.
Pin Configurations
ISL89160FR, ISL89160FB
(8 LD TDFN, EPSOIC)
TOP VIEW
Pin Descriptions
ISL89161FR, ISL89161FB
(8 LD TDFN, EPSOIC)
TOP VIEW
NC 1
8 NC
INA 2
7 OUTA
/INA 2
7 OUTA
6 VDD
GND 3
6 VDD
5 OUTB
/INB 4
5 OUTB
GND 3
INB 4
ISL89162FR, ISL89162FB
(8 LD TDFN, EPSOIC)
TOP VIEW
8 NC
/INA 2
7 OUTA
GND 3
6 VDD
INB
DESCRIPTION
1
NC
2
INA or
/INA
3
GND
4
INB or
/INB
Channel B enable, 0V to VDD
5
OUTB
Channel B output
6
VDD
Power input, 4.5V to 16V
7
OUTA
Channel A output, 0V to VDD
8
NC
8 NC
NC 1
NC 1
PIN
NUMBER SYMBOL
EPAD
No Connect. This pin may be left open
or connected to 0V or VDD
Channel A input, 0V to VDD
Power Ground, 0V
No Connect. This pin may be left open
or connected to 0V or VDD
Power Ground, 0V
5 OUTB
4
2
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
ISL89160FRTAZ
PART
MARKING
160A
TEMP RANGE
(°C)
INPUT CONFIGURATION
PACKAGE
(Pb-Free)
PKG.
DWG. #
-40 to +125
non-inverting
8 Ld 3x3 TDFN
L8.3x3I
ISL89161FRTAZ
161A
-40 to +125
inverting
8 Ld 3x3 TDFN
L8.3x3I
ISL89162FRTAZ
162A
-40 to +125
inverting + non-inverting
8 Ld 3x3 TDFN
L8.3x3I
ISL89160FBEAZ
89160 FBEAZ
-40 to +125
non-inverting
8 Ld EPSOIC
M8.15D
ISL89161FBEAZ
89161 FBEAZ
-40 to +125
inverting
8 Ld EPSOIC
M8.15D
ISL89162FBEAZ
89162 FBEAZ
-40 to +125
inverting + non-inverting
8 Ld EPSOIC
M8.15D
NOTES:
1. Add “-T*”, suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach
materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL89160, ISL89161, ISL89162. For more
information on MSL, please see Technical Brief TB363.
3
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD Relative to GND . . . . . . . . -0.3V to 18V
Logic Inputs (INA, INB) . . . . . . . . GND - 0.3v to VDD + 0.3V
Outputs (OUTA, OUTB). . . . . . . . . GND - 0.3v to VDD + 0.3V
Average Output Current (Note 6) . . . . . . . . . . . . . . . 150mA
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
ESD Ratings
Human Body Model Class 2 (Tested per JESD22-A114E) 2000V
Machine Model Class B (Tested per JESD22-A115-A) . . . 200V
Charged Device Model Class IV . . . . . . . . . . . . . . . . . 1000V
8 Ld TDFN Package (Notes 4, 5). . .
44
3
8 Ld EPSOIC Package (Notes 4, 5) .
42
3
Max Power Dissipation at +25°C in Free Air . . . . . . . . . 2.27W
Max Power Dissipation at +25°C with Copper Plane . . . 33.3W
Storage Temperature Range . . . . . . . . . . . . -65°C to +150°C
Operating Junction Temp Range . . . . . . . . . -40°C to +125°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Latch-Up
(Tested per JESD-78B; Class 2, Level A)
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Maximum Recommended Operating
Conditions
Junction Temperature. . . . . . . . . . . .
Supply Voltage, VDD Relative to GND
Logic Inputs (INA, INB) . . . . . . . . . .
Outputs (OUTA, OUTB). . . . . . . . . . .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
-40°C to +125°C
. . . . 4.5V to 16V
. . . . 0V to VDD
. . . . 0V to VDD
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach”
features. See Tech Brief TB379 for details.
5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
6. The average output current, when driving a power MOSFET or similar capacitive load, is the average of the rectified output
current. The peak output currents of this driver are self limiting by transconductance or rDS(ON) and do not required any
external components to minimize the peaks. If the output is driving a non-capacitive load, such as an LED, maximum output
current must be limited by external means to less than the specified absolute maximum.
DC Electrical Specifications
VDD = 12V, GND = 0V, No load on OUTA or OUTB, unless otherwise specified.
Boldface limits apply over the operating junction temperature range,
-40°C to +125°C.
TJ = +25°C
PARAMETERS
SYMBOL
TJ = -40°C to +125°C
MIN
TYP
MAX
MIN
(Note 7)
MAX
(Note 7)
UNITS
-
-
-
4.5
16
V
INx = GND
-
5
-
-
-
mA
INA = INB = 1MHz, square wave
-
25
-
-
mA
-
3.3
-
-
-
-
~25
-
-
-
mV
-
-
-
GND
VDD
V
TEST CONDITIONS
POWER SUPPLY
Voltage Range
VDD
VDD Quiescent Current
IDD
UNDERVOLTAGE
VDD Undervoltage
Lock-out (Note 9)
VUV
INA = INB = True (Note 10)
Hysteresis
V
INPUTs
Input Range for INA, INB
VIN
Logic 0 Threshold
for INA, INB
VIL
Nominally 37% x 3.3V
-
1.22
-
1.12
1.32
V
Logic 1 Threshold
for INA, INB
VIH
Nominally 63% x 3.3V
-
2.08
-
1.98
2.18
V
Input Capacitance of
INA, INB (Note 8)
CIN
-
2
-
-
-
pF
Input Bias Current
for INA, INB
IIN
-
-
-
-10
+10
µA
4
GND<VIN<VDD
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
DC Electrical Specifications
VDD = 12V, GND = 0V, No load on OUTA or OUTB, unless otherwise specified.
Boldface limits apply over the operating junction temperature range,
-40°C to +125°C. (Continued)
TJ = +25°C
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = -40°C to +125°C
MIN
TYP
MAX
MIN
(Note 7)
MAX
(Note 7)
UNITS
OUTPUTS
High Level Output Voltage
VOHA
VOHB
-
-
-
VDD - 0.1
VDD
V
Low Level Output Voltage
VOLA
VOLB
-
-
-
GND
GND + 0.1
V
Peak Output Source
Current
IO
VO (initial) = 0V, CLOAD = 10nF
-
-6
-
-
-
A
Peak Output Sink Current
IO
VO (initial) =12V, CLOAD = 10nF
-
+6
-
-
-
A
NOTES:
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established
by characterization and are not production tested.
8. This parameter is taken from the simulation models for the input FET. The actual capacitance on this input will be dominated
by the PCB parasitic capacitance.
9. A 200µs delay further inhibits the release of the output state when the UV positive going threshold is crossed.
10. The true state of a specific part number is defined by the input logic symbol.
AC Electrical Specifications
VDD = 12V, GND = 0V, No Load on OUTA or OUTB, Unless Otherwise Specified.
Boldface limits apply over the operating junction temperature range,
-40°C to +125°C.
PARAMETERS
SYMBOL
TEST
CONDITIONS
/NOTES
TJ = -40°C
to +125°C
TJ = +25°C
MIN
TYP
MAX
MIN
MAX
UNITS
Output Rise Time (see Figure 2)
tR
CLOAD = 10nF,
10% to 90%
-
20
-
-
40
ns
Output Fall Time (see Figure 2)
tF
CLOAD = 10nF,
90% to 10%
-
20
-
-
40
ns
Output Rising Edge Propagation Delay for
Non-Inverting Inputs (see Figure 1)
tRDLYn
No load
-
25
-
-
50
ns
Output Rising Edge Propagation Delay with
Inverting Inputs (see Figure 1)
tRDLYi
No load
-
25
-
-
50
ns
Output Falling Edge Propagation Delay with
Non-Inverting Inputs (see Figure 1)
tFDLYn
No load
-
25
-
-
50
ns
Output Falling Edge Propagation Delay with
Inverting Inputs (see Figure 1)
tFDLYi
No load
-
25
-
-
50
ns
Rising Propagation Matching (see Figure 1)
tRM
-
<1ns
-
-
-
ns
Falling Propagation Matching (see Figure 1)
tFM
-
<1ns
-
-
-
ns
Miller Plateau Sink Current
(See Test Circuit Figure 3)
-IMP
VDD = 10V,
VMILLER = 5V
-
6
-
-
-
A
-IMP
VDD = 10V,
VMILLER = 3V
-
4.7
-
-
-
A
-IMP
VDD = 10V,
VMILLER= 2V
-
3.7
-
-
-
A
5
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
AC Electrical Specifications
VDD = 12V, GND = 0V, No Load on OUTA or OUTB, Unless Otherwise Specified.
Boldface limits apply over the operating junction temperature range,
-40°C to +125°C. (Continued)
PARAMETERS
TEST
CONDITIONS
/NOTES
SYMBOL
Miller Plateau Source Current
(See Test Circuit Figure 4)
TJ = -40°C
to +125°C
TJ = +25°C
MIN
TYP
MAX
MIN
MAX
UNITS
IMP
VDD = 10V,
VMILLER = 5V
-
5.2
-
-
-
A
IMP
VDD = 10V,
VMILLER = 3V
-
5.8
-
-
-
A
IMP
VDD = 10V,
VMILLER = 2V
-
6.9
-
-
-
A
Test Waveforms and Circuits
3.3V*
INA,
INB
50%
50%
tRDLY
tFDLY
0V
90%
/OUTA
OUTA
tRDLY
tFDLY
OUTA
OR
OUTB
/OUTB
OUTB
10%
tR
tF
tFM
tRM
* logic levels: A option = 3.3V, B option = 5.0V, C option = VDD
FIGURE 1. PROP DELAYS AND MATCHING
ISL8916x
FIGURE 2. RISE/FALL TIMES
10V
10V
ISL8916x
0.1µF
10k
0.1µF
VMILLER
VMILLER
10µF
200ns
10nF
+ISENSE
-ISENSE
FIGURE 3. MILLER PLATEAU SINK CURRENT TEST
CIRCUIT
6
10µF
200ns
+ISENSE
10nF
50m
10k
50m
-ISENSE
FIGURE 4. MILLER PLATEAU SOURCE CURRENT TEST
CIRCUIT
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Test Waveforms and Circuits
10V
Current through
0.1Ω Resistor
IM P
0A
V M IL LER
V O UT
V OUT
V M ILLER
Current through
0.1Ω Resistor
-I M P
0V
0
200 ns
20 0n s
FIGURE 5. MILLER PLATEAU SINK CURRENT
FIGURE 6. MILLER PLATEAU SOURCE CURRENT
Typical Performance Curves
35
+125°C
+125°C
3.0
1MHz BIAS CURRENT (mA)
STATIC BIAS CURRENT (mA)
3.5
+25°C
-40°C
2.5
2.0
4
8
12
30
25
-40°C
20
15
10
5
16
+25°C
4
8
12
VDD
16
VDD
FIGURE 8. IDD vs VDD (1 MHz)
FIGURE 7. IDD vs VDD (STATIC)
50
1.1
16V
NO LOAD
10V
30
12V
20
5V
10
0
rDS(ON) (Ω)
IDD (mA)
40
VOUT LOW
1.0
0.9
VOUT HIGH
0.8
0.7
0.6
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FREQUENCY (MHz)
FIGURE 9. IDD vs FREQUENCY (+25°C)
7
0.5
-45
-20
5
30
55
80
105
130
TEMPERATURE (°C)
FIGURE 10. rDS(ON) vs TEMPERATURE
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Typical Performance Curves (Continued)
25
3.0
FALL TIME, CLOAD = 10nF
RISE/FALL TIME (ns)
INPUT LOGIC THRESHOLDS (3.3V)
3.5
2.5
2.0
POSITIVE THRESHOLD
1.5
NEGATIVE THRESHOLD
1.0
20
RISE TIME, CLOAD = 10nF
0.5
0.0
-45
-20
5
30
55
80
105
15
-45
130
-20
5
TEMPERATURE (°C)
30
55
80
105
130
TEMPERATURE (°C)
FIGURE 11. INPUT THRESHOLDS
FIGURE 12. OUTPUT RISE/FALL TIME
PROPAGATION DELAY (ns)
30
OUTPUT FALLING PROP DELAY
25
OUTPUT RISING PROP DELAY
20
15
5
7
9
11
VDD
13
15
FIGURE 13. PROPAGATION DELAY vs VDD
Functional Description
Overview
The ISL89160, ISL89161, ISL89162 drivers incorporate
several features including precision input logic
thresholds, undervoltage lock-out, and fast rising high
output drive currents.
The precision input thresholds facilitate the use of an
external RC network to delay the rising or falling
propagation of the driver output. This is a useful feature
to create dead times for bridge applications to prevent
shoot through.
To prevent unexpected glitches on the output of the
ISL89160, ISL89161, ISL89162 during power-on or
power-off when VDD is very low, the Undervoltage (UV)
lock-out prevents the outputs of the ISL89160,
ISL89161, ISL89162 driver from turning on. The UV
lock-out forces the driver outputs to be low when
VDD < ~3.2 VDC regardless of the input logic level.
Fast rising (or falling) output drive current of the
ISL89160, ISL89161, ISL89162 minimizes the turn-on
(off) delay due to the input capacitance of the driven FET.
The switching transition period at the Miller plateau is
also minimized by the high drive currents. (See the
specified Miller plateau currents in the AC Electrical
Specifications on page 5).
Application Information
Precision Thresholds for Time Delays
The nominal input negative transition threshold is 1.22V
and the positive transition threshold is 2.08V (37% and
63% of 3.3V).
D
INx
Rdel
OUTx
cdel
FIGURE 14. DELAY USING RCD NETWORK
8
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
The 37% and 63% thresholds were chosen to simplify
the calculations for the desired time delays. When using
an RC circuit to generate a time delay, the delay is simply
T (secs) = R (ohms) x C (farads). Please note that this
equation only applies if the input logic voltage amplitude
is 3.3V. If the logic high amplitude is higher than 3.3V,
the equations in EQ 1 can be used for more precise delay
calculations.
V
V
V
H
L
R
= 100Ω
Low level of the logic signal into the RC
Timing values
C del = 1nF
⎛ V L – V THRESH
⎞
t del = – R del C del × LN ⎜ -------------------------------------------- + 1⎟
V –V
⎝
⎠
H
L
t del = 51.731ns
Nominal delay time
(EQ. 1)
In this example, the high input logic voltage is 5V, the
positive threshold is 63% of 3.3V and the low level input
logic is 0.1V. Note the rising edge propagation delay
of the driver must be added to this value.
The minimum recommended value of C is 100pF. The
parasitic capacitance of the PCB and any attached scope
probes will introduce significant delay errors if smaller
values are used. Larger values of C will further minimize
errors.
VDS = 64V
8
VDS = 40V
6
4
2
0
= 63% × 3.3V Positive going threshold
= 0.1V
del
10
High level of the logic signal into the RC
= 5V
THRESH
12
Vgs GATE-SOURCE VOLTAGE (V)
In Figure 14, Rdel and Cdel delay the rising edge of the
input signal. For the falling edge of the input signal, the
diode shorts out the resistor resulting in a minimal falling
edge delay. If the diode polarity is reversed, the falling
edge is delayed and the rising delay is minimal.
0
2
4
6
8
10 12 14 16 18 20 22 24
Qg, GATE CHARGE (nC)
FIGURE 15. MOSFET GATE CHARGE vs GATE VOLTAGE
Figure 15 illustrates how the gate charge varies with
the gate voltage in a typical power MOSFET. In this
example, the total gate charge for Vgs = 10V is 21.5nC
when VDS = 40V. This is the charge that a driver must
source to turn-on the MOSFET and must sink to
turn-off the MOSFET.
Equation 2 shows calculating the power dissipation of
the driver:
R gate
P D = 2 • Q c • freq • V GS • --------------------------------------------- + I DD ( freq ) • V DD
R
+r
gate
DS ( ON )
(EQ. 2)
where:
freq = Switching frequency,
VGS = VDD bias of the ISL89160, ISL89161, ISL89162
Qc = Gate charge for VGS
Acceptable values of R are primarily effected by the
source resistance of the logic inputs. Generally, 100Ω
resistors or larger are usable. A practical maximum
value, limited by contamination on the PCB, is 1MΩ.
IDD(freq) = Bias current at the switching frequency
(see Figure 7)
Power Dissipation of the Driver
Rgate = External gate resistance (if any).
The power dissipation of the ISL89160, ISL89161,
ISL89162 is dominated by the losses associated with the
gate charge of the driven bridge FETs and the switching
frequency. The internal bias current also contributes to
the total dissipation but is usually not significant as
compared to the gate charge losses.
Note that the gate power dissipation is proportionally
shared with the external gate resistor and the output
rDS(ON). When sizing an external gate resistor, do not
overlook the power dissipated by this resistor.
9
rDS(ON) = ON-resistance of the driver
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Typical Application Circuit
Vbridge
ZVS Full Bridge
SQR
PWM
L
R
L
QUL
VGUL
U1A
QUR
VGUR
SQR
LL
ISL89162
LR
VLL
U1B
Red dashed lines
emphasize the
resonant
switching delay LL
of the low-side
bridge FETs
VLR
VGLL
VGUL
LL: lower left
LR: lower right
UL: upper left
UR: upper right
GLL: gate lower left
VGLR
VGUR
T2
T1A
This is an example of how the ISL89160, ISL89161,
ISL89162, MOSFET drivers can be applied in a zero
voltage switching full bridge. Two main signals are
required: a 50% duty cycle square wave (SQR) and a
PWM signal synchronized to the edges of the SQR input.
An ISL89162 is used to drive T1 with alternating half
cycles driving QUL and QUR. An ISL89160 is used to drive
QLL and QLR also with alternating half cycles. Unlike the
two high-side bridge FETs, the two low side bridge FETs
are turned on with a rising edge delay. The delay is setup
by the RCD network on the inputs to the ISL89160. The
duration of the delay is chosen to turn on the low-side
FETs when the voltage on their respective drains is at the
resonant valley. For a complete description of the ZVS
topology, refer to AN1603 “ISL6752_54 Evaluation Board
Application Note”.
General PCB Layout Guidelines
The AC performance of the ISL89160, ISL89161,
ISL89162 depends significantly on the design of the PC
board. The following layout design guidelines are
recommended to achieve optimum performance:
• Place the driver as close as possible to the driven
power FET.
• Understand where the switching power currents flow.
The high amplitude di/dt currents of the driven
power FET will induce significant voltage transients
on the associated traces.
• Keep power loops as short as possible by paralleling
the source and return traces.
T1B
QLL
VGLL
QLR
VGLR
LR
U2A
½ ISL89160
U2B
½ ISL89160
• When practical, minimize impedances in low level
signal circuits. The noise, magnetically induced on a
10k resistor, is 10x larger than the noise on a 1k
resistor.
• Be aware of magnetic fields emanating from
transformers and inductors. Gaps in these structures
are especially bad for emitting flux.
• If you must have traces close to magnetic devices,
align the traces so that they are parallel to the flux
lines to minimize coupling.
• The use of low inductance components such as chip
resistors and chip capacitors is highly recommended.
• Use decoupling capacitors to reduce the influence of
parasitic inductance in the VDD and GND leads. To
be effective, these caps must also have the shortest
possible conduction paths. If vias are used, connect
several paralleled vias to reduce the inductance of
the vias.
• It may be necessary to add resistance to dampen
resonating parasitic circuits especially on OUTA and
OUTB. If an external gate resistor is unacceptable,
then the layout must be improved to minimize lead
inductance.
• Keep high dv/dt nodes away from low level circuits.
Guard banding can be used to shunt away dv/dt
injected currents from sensitive circuits. This is
especially true for control circuits that source the
input signals to the ISL89163/164/165.
• Use planes where practical; they are usually more
effective than parallel traces.
• Avoid having a signal ground plane under a high
amplitude dv/dt circuit. This will inject di/dt currents
into the signal ground paths.
• Avoid paralleling high amplitude di/dt traces with low
level signal lines. High di/dt will induce currents and
consequently, noise voltages in the low level signal
lines.
• Do power dissipation and voltage drop calculations of
the power traces. Many PCB/CAD programs have
built in tools for calculation of trace resistance.
10
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
• Large power components (Power FETs, Electrolytic
caps, power resistors, etc.) will have internal
parasitic inductance which cannot be eliminated. This
must be accounted for in the PCB layout and circuit
design.
• If you simulate your circuits, consider including
parasitic components especially parasitic inductance.
General EPAD Heatsinking
Considerations
The thermal pad is electrically connected to the GND
supply through the IC substrate. The epad of the
ISL89163/164/165 has two main functions: to provide a
quiet Gnd for the input threshold comparators and to
provide heat sinking for the IC. The EPAD must be
connected to a ground plane and no switching currents
from the driven FET should pass through the ground
plane under the IC.
Figure 16 is a PCB layout example of how to use vias to
remove heat from the IC through the epad.
EPAD GND
PLANE
EPAD GND
PLANE
BOTTOM
LAYER
COMPONENT LAYER
FIGURE 16. TYPICAL PCB PATTERN FOR THERMAL
VIAS
For maximum heatsinking, it is recommended that a
ground plane, connected to the EPAD, be added to both
sides of the PCB. A via array, within the area of the EPAD,
will conduct heat from the EPAD to the gnd plane on the
bottom layer. The number of vias and the size of the gnd
planes required for adequate heatsinking is determined
by the power dissipated by the ISL89160, ISL89161,
ISL89162, the air flow and the maximum temperature of
the air around the IC.
11
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to
web to make sure you have the latest Rev.
DATE
REVISION
11/2/10
FN7719.0
CHANGE
Initial Release
Products
Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The
Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones,
handheld products, and notebooks. Intersil's product families address power management and analog signal
processing functions. Go to www.intersil.com/products for a complete list of Intersil product families.
*For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device
information page on intersil.com: ISL89160, ISL89161, ISL89162
To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff
FITs are available from our website at http://rel.intersil.com/reports/sear
12
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Package Outline Drawing
L8.3x3I
8 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
Rev 1 6/09
2X 1.950
3.00
B
0.15
8
5
3.00
(4X)
6X 0.65
A
1.64 +0.10/ - 0.15
6
PIN 1
INDEX AREA
6
PIN #1 INDEX AREA
1
4
4
8X 0.30
8X 0.400 ± 0.10
TOP VIEW
0.10 M C A B
2.38
+0.10/ - 0.15
BOTTOM VIEW
SEE DETAIL "X"
( 2.38 )
( 1.95)
0.10 C
Max 0.80
C
0.08 C
SIDE VIEW
( 8X 0.60)
(1.64)
( 2.80 )
PIN 1
C
0 . 2 REF
5
(6x 0.65)
0 . 00 MIN.
0 . 05 MAX.
( 8 X 0.30)
DETAIL "X"
TYPICAL RECOMMENDED LAND PATTERN
NOTES:
1.
Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3.
Unless otherwise specified, tolerance : Decimal ± 0.05
4.
Dimension applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5. Tiebar shown (if present) is a non-functional feature.
6.
13
The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
FN7719.0
November 2, 2010
ISL89160, ISL89161, ISL89162
Small Outline Exposed Pad Plastic Packages (EPSOIC)
M8.15D
N
INDEX
AREA
0.25(0.010) M
H
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
B M
E
INCHES
-B-
1
2
SYMBOL
3
TOP VIEW
L
SEATING PLANE
-A-
A
D
-C-
α
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
SIDE VIEW
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.059
0.067
1.52
1.72
-
A1
0.003
0.009
0.10
0.25
-
B
0.0138
0.0192
0.36
0.46
9
C
0.0075
0.0098
0.19
0.25
-
D
0.189
0.196
4.80
4.98
3
E
0.150
0.157
3.811
3.99
4
e
h x 45°
MIN
0.050 BSC
1.27 BSC
-
H
0.230
0.244
5.84
6.20
-
h
0.010
0.019
0.25
0.50
5
L
0.016
0.050
0.41
1.27
6
8°
0°
N
α
8
0°
8
7
8°
-
P
0.118
0.137
3.00
3.50
11
P1
0.078
0.099
2.00
2.50
11
Rev. 0 5/07
NOTES:
1
2
3
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
P1
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
N
P
BOTTOM VIEW
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical enhanced
variations. Values shown are maximum size of exposed pad
within lead count and body size.
For additional products, see www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications
at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by
Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any
infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
14
FN7719.0
November 2, 2010
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