Databook.fxp 1/13/99 2:09 PM Page B-37 B-37 01/99 IF4501 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IF4501 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450L Max – 20 – 0.35 5 – 20 V 10 mA 300 mW 2.4 mW/°C – 65°C to 200°C – 0.1 – 1.5 Unit Test Conditions V IG = – 1 µA, VDS = ØV nA V mA VGS = – 10V, VDS = ØV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 9 pF VDS = 15V, ID = 5 mA f = 1 MHz nV/√Hz VDG = 12V, ID = 5 mA f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage ēN TOÐ72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375