PHASE CONTROL THYRISTOR H650TBXX Symbol Characteristics Conditions TJ (0C) Value Unit 125 200-600 V 125 200-600 V 125 125 40 40 mA mA 650 A 1020 A 14 kA 980 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage peak off-stage peak reverse current peak off-state current V = VRRM V = VRRM CONDUCTING PARAMETERS IF(AV) Average on-state current IRMS RMS on-state current ITSM Surge on-state current I2 t I2 t VT Peak on-state voltage drop V0 R0 Threshold voltage On-state slope resistance 180 sine, 50H Z, TC = 700C Sine wave, 10mS without reverse voltage 125 On-state current = 2 kA 125 1.35 V 125 125 1.00 0.12 V mΩ 25 25 25 300 2.00 1000 mA V mA 160 W 120 12 40 A/μSec V A TRIGGERING PARAMETERS IGT VGT IL PG –PEAK di/dt VFGM IFGM Gate trigger current Gate trigger voltage Latching Current Maximum Peak Gate Power VD = 5V VD = 5V Pulse width 100μSec Repetitive rate of rise of current Maximum forward gate voltage Maximum forward gate current THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine RTH (C-HK) Thermal impedance TJ TSTG F W Junction to case 0.070 0 C/W Case to heatsink 0.015 0 C/W Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight HIND RECTIFIERS LTD 125 -40 - 125 18 875 0 C C NM gms 0 1 of 6 PHASE CONTROL THYRISTOR H650TBXX All dimensions in mm HIND RECTIFIERS LTD 2 of 6 PHASE CONTROL THYRISTOR H650TBXX On State Power Loss 1200 DC 1100 1000 900 1800 Pt(av) - W 800 1200 700 600 600 500 400 300 200 100 0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 It (av) Maximum Permissible Case Temp 140 120 Tcase (0C) 100 80 60 40 20 600 1200 1800 DC 0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 It(av) A HIND RECTIFIERS LTD 3 of 6 PHASE CONTROL THYRISTOR H650TBXX Itsm (A) Max non repetitive Surge Current 15000 14000 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0.01 0.1 1 10 Tim e in Sec Transient Thermal Impedance Junction to Case 0.08 0.07 0.06 Rth(j-c) 0.05 0.04 0.03 0.02 0.01 0 0.001 0.01 0.1 1 10 Time in Sec HIND RECTIFIERS LTD 4 of 6 PHASE CONTROL THYRISTOR H650TBXX I t(av) A On State Characteristics 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 0.5 1 1.5 2 2.5 3 Vt (V) Gate Trigger Characteristics 4 250C VG(V) - V 3 2 1 0 0 100 200 300 400 500 IG (av) - A HIND RECTIFIERS LTD 5 of 6 PHASE CONTROL THYRISTOR H650TBXX Ordering Information: H Hirect make Thyristor 650 IF(AV) = 650A TB TB – with a Pigtail XX VRRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - [email protected] Website: - www.hirect.com HIND RECTIFIERS LTD June-2008 6 of 6