YFWDIODE ES3DF Surface mount superfast recovery rectifier Datasheet

ES3AF THRU ES3JF
Surface Mount Superfast Recovery Rectifier
R e v e r s e Vo l t a g e – 5 0 t o 6 0 0 V
PINNING
Forward Current – 3 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Juntion
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code:
ES3AF~ES3JF: ES3A~ES3J
Simplified outline SMAF and symbol
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg 0.00086oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
ES3AF
ES3BF
ES3CF
ES3DF
ES3EF
ES3GF
ES3JF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V DC
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current
at T L = 100 °C
I F(AV)
3
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
100
A
Maximum Forward Voltage at 3A
VF
Parameter
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta =125 °C
1.25
1
1.7
V
IR
5
200
μA
Typical Junction Capacitance
at V R =4V, f=1MHz
Cj
45
pF
Maximum Reverse Recovery Time
at I F =0.5A, I R =1A, I rr =0.25A
t rr
35
ns
T j , T stg
-55 ~ +150
°C
Operating and Storage Temperature Range
ES3AF THRU ES3JF
F i g . 1 R e v e r s e R e c o v e r y Ti m e C h a r a c t e r i s t i c A n d Te s t C i r c u i t D i a g r a m
50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
-
0
-0.25
1 ohm
OSCILLOSCOPE
Note 1
NonInductive
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
F i g . 3 Ty p i c a l R e v e r s e C h a r a c t e r i s t i c s
3.5
300
3.0
100
I R - Reverse Current ( μ A)
Average Forward Current (A)
F i g . 2 M a x i m u m Av e r a g e F o r w a r d C u r r e n t R a t i n g
2.4
1.8
1.2
Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0. 315"(8.0×8. 0mm )
pad areas
0.6
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
50
75
100
125
150
175
0
Lead Temperature (°C)
40
60
80
100
% of PIV.VOLTS
F i g . 5 Ty p i c a l J u n c t i o n C a p a c i t a n c e
F i g . 4 Ty p i c a l F o r w a r d C h a r a c t e r i s t i c s
45
10
T J =25°C
Junction Capacitance ( pF)
Instaneous Forward Current (A)
20
ES3AF
1.0
ES3EF
ES3JF
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
Instaneous Forward Voltage (V)
40
35
30
25
20
T J =25°C
f = 1.0MHz
V sig = 50mV p-p
15
10
0.1
1
10
Reverse Voltage (V)
100
ES3AF THRU ES3JF
PA C K A G E O U T L I N E
Plastic surface mounted package; 2 leads
SMAF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.3
0.23
3.7
2.7
1.6
1.3
4.9
min
1.1
0.18
3.3
2.4
1.3
1.0
4.4
max
51
9.1
146
106
63
51
193
min
43
7.1
130
94
51
39
173
UNIT
mm
g
pad
e
E
A
pad
HE
∠
7°
The recommended mounting pad size
Marking
Type number
2.8(110)
Marking code
1.6(63)
1.8(71)
1.6(63)
Unit:mm(mil)
ES3AF
ES3A
ES3BF
ES3B
ES3CF
ES3C
ES3DF
ES3D
ES3EF
ES3E
ES3GF
ES3G
ES3JF
ES3J
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