EMA11 / UMA11N / FMA11A Transistors Emitter common (dual digital transistors) EMA11 / UMA11N / FMA11A !External dimensions (Units : mm) !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. 1.3 2.0 0.65 0.65 (1) (5) (2) 0.2 (4) (3) EMA11 / UMA11N 1.25 !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) 0to0.1 0.1Min. ROHM : UMT5 EIAJ : SC-88A The following characteristics apply to both DTr1 and DTr2. 0.9 0.7 0.15 2.1 All terminals have same dimensions Abbreviated symbol: A11 0.95 0.95 1.9 2.9 1.1 (5) (1) !Equivalent circuit 0.8 (4) 0.3 (2) (3) FMA11A 1.6 (2) R2 (1) R1 DTr1 R2 (4) (3) R1 DTr2 (5) R2 2.8 (4) (2) R1=4.7kΩ R2=47kΩ (5) R1 DTr1 R2 0.3to0.6 ROHM : SMT5 EIAJ : SC-74A (1) R1=4.7kΩ R2=47kΩ !Packaging specifications Taping Package Type Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 − − EMA11 UMA11N − FMA11A − − − !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage VCC Input voltage VIN Output current Power dissipation Symbol EMA11 / UMA11N Limits −50 −30 IO −100 −100 Pd V V 5 IC (Max.) FMA11A Unit 150 (TOTAL) mA mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. ∗1 ∗2 0to0.1 (3) R1 DTr2 FMA11A 0.15 EMA11 / UMA11N All terminals have same dimensions Abbreviated symbol: A11 EMA11 / UMA11N / FMA11A Transistors !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.5 VI (on) −1.3 − − VO (on) − −0.1 −0.3 V Input voltage Output voltage V II − − −1.8 mA − − −0.5 µA GI 80 − − − DC current gain Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−5mA IO (off) Input current Output current Unit IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA Transition frequency fT − 250 − MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 8 10 12 − − ∗ VCE=10mA, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Electrical characteristic curves −10m VO=−0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) −20 −10 −5 Ta=−40°C 25°C 100°C −2 −1 −500m −200m −100m −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) −1 OUTPUT VOLTAGE : VO (on) (V) −200m 500 −2m −1m −500µ Ta=100°C 25°C −40°C −200µ −100µ −50µ −20µ −10µ lO/lI=20 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current VO=−5V 200 Ta=100°C 25°C −40°C 100 50 20 10 5 −5µ 2 −2µ −100µ −200µ −500m 1k VCC=−5V −5m −50 DC CURRENT GAIN : GI −100 −1µ 0 −0.5 −1 −1.5 −2 −2.5 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) −3 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current