NTE NTE346 Silicon npn transistor rf power transistor Datasheet

NTE346
Silicon NPN Transistor
RF Power Transistor
Description:
The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
or pre–driver stages, in VHF and UHF equipment.
Features:
D Current–Gain–Bandwidth Product–fT = 500MHz (Min) @ IC = 50mAdc
D Power Gain–Gpe = 10dB (Min) @ VCE =12Vdc
D 1 Watt Minimum Power Output @ f = 175MHz
D Multiple–Emitter Construction for Excellent High–Frequency Performance
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Base Current–Continuous. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5Wa
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCEO(sus) IC = 5mA, IB = 0
20
–
–
V
VCER(sus) IC = 5mA, RBE = 10Ω
40
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 12V, IB = 0
–
–
0.02
mA
ICEV
VCE = 40V, VBE = –1.5V
–
–
0.1
mA
VCE = 12V, VBE = –1.5V, TC = +150°C
–
–
5.0
mA
VEB = 2V, IC = 0
–
–
0.1
mA
IEBO
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
IC = 100mA, VCE = 5V
10
–
200
IC = 360mA, VCE = 5V
5
–
–
IC = 100mA, IB = 20mA
–
–
0.5
V
500
–
–
MHz
ON Characteristics
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
Output Capacitance
IC = 50mA, VCE = 15V, f = 1MHz
Cob
VCB = 12V, IE = 0, f = 1MHz
–
–
4
pF
Pin
Pout = 1W, ZS = 50Ω, VCC = 12V,
f = 175MHz
–
–
100
W
50
–
–
%
10
–
–
dB
Functional Test
Power Input
η
Collector Efficiency
Common–Emitter Amplifier Power Gain
Gpe
Pin = 100mW, ZS = 50Ω, VCC = 12V,
f = 175MHz
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.018 (0.45) Dia
B
E
C/Case
45°
.031 (.793)