UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn MARKING G1 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-010,D MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO 180 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PD 350 mW ℃ Operating and Storage Junction Temperature TJ, TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) SYMBOL VCBO VCEO VEBO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product Output Capacitance fT Cob Noise Figure NF TEST CONDITIONS IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VBE=4V, IC =0 VCE=5V, IC =1mA VCE=5V, IC =10mA VCE=5V, IC =50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC =10mA, f=100MHz VCB=10V, IE=0, f=1MHz IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz MIN 180 160 6 TYP MAX 50 50 80 80 80 100 160 UNIT V V V nA nA 400 0.15 0.2 1 1 300 6.0 MHz pF 8 dB V V Note: Pulse test: PW<300µs, Duty Cycle<2% CLASSIFICATION OF hFE RANK RANGE A 80-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 150-240 C 200-400 2 of 4 QW-R206-010,D MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR ■ TYPICAL CHARACTERICS Fig.2 DC Current Gain Fig.1 Collector Output Capacitance 3 10 VCE=5V 8 f=1MHz IE =0 DC current Gain, h FE Capacitance, Cob (pF) 10 6 4 10 10 2 1 2 0 10 0 10 0 1 10 2 10 -1 10 Collector-Base Voltage (V) 0 10 10 1 2 10 3 10 Collector Current, Ic (mA) Fig.3 Base-Emitter on Voltage Fig.4 Saturation Voltage 3 10 1 10 Saturation Voltage (V) Collector Current, Ic (mA) Ic=10*IB VCE=5V 2 10 1 10 0 10 0.2 0.4 0.6 0.8 1.0 Base-Emitter Voltage (V) Current Gain-Bandwidth Product, fT (MHz) -1 10 VCE(SAT ) -2 10 0 VBE(SAT) 0 10 -1 10 0 10 1 10 3 10 2 10 Collector Current, Ic (mA) Fig.5 Current Gain -Bandwidth Product 3 10 VCE=10V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-010,D MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-010,D