204pin DDR3 SDRAM SODIMM
DDR3 SDRAM
Unbuffered SODIMMs
Based on 2Gb B-die
HMT312S6BFR6C
HMT325S6BFR6C
HMT325S6BFR8C
HMT351S6BFR8C
*Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 0.2 / Feb. 2010
1
Revision History
Revision No.
History
Draft Date
Remark
0.1
Initial Release
Dec.2009
Preliminary
0.2
Added IDD Speciricaion
Feb.2010
Preliminary
Rev. 0.2 / Feb. 2010
2
Description
Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM
devices. These Unbuffered DDR3 SDRAM DIMMs are intended for use as main memory when installed in
systems such as mobile personal computers.
Features
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
Density
Organization
Component Composition
# of
ranks
HMT312S6BFR6C-G7/H9/PB
1GB
128Mx64
128Mx16(H5TQ2G63BFR)*4
1
HMT325S6BFR6C-G7/H9/PB
2GB
256Mx64
128Mx16(H5TQ2G63BFR)*8
2
HMT325S6BFR8C-G7/H9/PB
2GB
256Mx64
256Mx8(H5TQ2G83BFR)*8
1
HMT351S6BFR8C-G7/H9/PB
4GB
512Mx64
256Mx8(H5TQ2G83BFR)*16
2
Rev. 0.2 / Feb. 2010
3
Key Parameters
MT/s
Grade
tCK
(ns)
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
DDR3-1066
-G7
1.875
7
13.125
13.125
37.5
50.625
7-7-7
DDR3-1333
-H9
1.5
9
13.5
13.5
36
49.5
9-9-9
DDR3-1600
-PB
1.25
11
13.75
13.75
35
48.75
11-11-11
Speed Grade
Frequency [MHz]
Grade
Remark
CL6
CL7
CL8
CL9
CL10
-G7
800
1066
1066
-H9
800
1066
1066
1333
1333
-PB
800
1066
1066
1333
1333
CL11
1600
Address Table
1GB(1Rx16)
2GB(2Rx16)
2GB(1Rx8)
4GB(2Rx8)
Refresh Method
8K/64ms
8K/64ms
8K/64ms
8K/64ms
Row Address
A0-A13
A0-A13
A0-A14
A0-A14
Column Address
A0-A9
A0-A9
A0-A9
A0-A9
Bank Address
BA0-BA2
BA0-BA2
BA0-BA2
BA0-BA2
Page Size
2KB
2KB
1KB
1KB
Rev. 0.2 / Feb. 2010
4
Pin Descriptions
Pin Name
Description
Num
ber
Pin Name
Num
ber
Description
CK[1:0]
Clock Input, positive line
2
DQ[63:0]
Data Input/Output
64
CK[1:0]
Clock Input, negative line
2
DM[7:0]
Data Masks
8
CKE[1:0]
Clock Enables
2
DQS[7:0]
Data strobes
8
RAS
Row Address Strobe
1
DQS[7:0]
Data strobes, negative line
8
CAS
Column Address Strobe
1
EVENT
Temperature event pin
1
WE
Write Enable
1
TEST
S[1:0]
Chip Selects
2
RESET
Address Inputs
14
A10/AP
Address Input/Autoprecharge
1
A12/BC
Address Input/Burst chop
1
BA[2:0]
SDRAM Bank Addresses
3
VREFDQ
ODT[1:0]
On Die Termination Inputs
2
VREFCA
1
VTT
SPD Data Input/Output
1
VDDSPD
SPD Address Inputs
2
NC
A[9:0],A11,
A[15:13]
SCL
SDA
SA[1:0]
Serial Presence Detect (SPD)
Clock Input
Logic Analyzer specific test pin (No
connect on SODIMM)
1
Reset Pin
1
VDD
Core and I/O Power
18
VSS
Ground
52
Input/Output Reference
1
1
Termination Voltage
2
SPD Power
1
Reserved for future use
2
Total: 204
Rev. 0.2 / Feb. 2010
5
Input/Output Functional Descriptions
Symbol
Type
Polarity
Function
CK0/CK0
CK1/CK1
IN
Cross Point
The system clock inputs. All address and command lines are sampled on the cross point
of the rising edge of CK and falling edge of CK. A Delay Locked Loop (DLL) circuit is
driven from the clock inputs and output timing for read operations is synchronized to the
input clock.
CKE[1:0]
IN
Active
High
S[1:0]
IN
Active
Low
ODT[1:0]
IN
Active
High
Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR3
SDRAM mode register.
RAS, CAS, WE
IN
Active
Low
When sampled at the cross point of the rising edge of CK, signals CAS, RAS, and WE
define the operation to be executed by the SDRAM.
VREFDQ
VREFCA
Supply
BA[2:0]
IN
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when
low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self
Refresh mode.
Enables the associated DDR3 SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabled, new commands
are ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is
selected by S1.
Reference voltage for SSTL15 inputs.
—
Selects which SDRAM internal bank of eight is activated.
A[9:0],
A10/AP,
A11,
A12/BC
A[15:13]
IN
—
During a Bank Activate command cycle, defines the row address when sampled at the
cross point of the rising edge of CK and falling edge of CK. During a Read of Write command cycle, defines the column address when sampled at the cross point of the rising
edge of CK and falling edge of CK. In addition to the column address, AP is used to
invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high
autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low,
autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction
with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used
to define which bank to precharge. A12(BC) is samples during READ and WRITE commands to determine if burst chop (on-the-fly) will be performed (HIGH, no burst chop:
LOW, burst chopped).
DQ[63:0]
I/O
—
Data Input/Output pins.
DM[7:0]
IN
Active
High
VDD, VDDSPD
VSS
Supply
DQS[7:0],
DQS[7:0]
I/O
SA[1:0]
IN
Rev. 0.2 / Feb. 2010
The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation
if it is high. In Read mode, DM lines have no effect.
Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
The data strobes, associated with one data byte, sourced with data transfers. In Write
mode, the data strobe is sourced by the controller and is centered in the data window.
Cross Point In Read mode, the data strobe is sourced by the DDR3 SDRAMs and is sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the
crosspoint of respective DQS and DQS.
—
These signals are tied at the system planar to either VSS or VDDSPD to configure the
serial SPD EEPROM address range.
6
Symbol
Type
Polarity
Function
SDA
I/O
—
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to VDDSPD on the system planar to act as a
pullup.
SCL
IN
—
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time to VDDSPD on the system planar to act as a pullup.
EVENT
OUT
(open
drain)
VDDSPD
Supply
Serial EEPROM positive power supply wired to a separate power pin at the connector
which supports from 3.0 Volt to 3.6 Volt (nominal 3.3V) operation.
RESET
IN
The RESET pin is connected to the RESET pin on the register and to the RESET pin on
the DRAM.
TEST
Rev. 0.2 / Feb. 2010
This signal indicates that a thermal event has been detected in the thermal sensing
device.The system should guarantee the electrical level requirement is met for the
Active Low
EVENT pin on TS/SPD part.
No pull-up resister is provided on DIMM.
Used by memory bus analysis tools (unused (NC) on memory DIMMs)
7
Pin Assignments
Pin
#
Front
Side
Pin
#
Back
Side
Pin
#
Front
Side
Pin
#
Back
Side
Pin
#
Front
Side
Pin
#
Back
Side
Pin
#
Front
Side
Pin
#
Back
Side
1
VREFDQ
2
VSS
53
DQ19
54
VSS
105
VDD
106
VDD
157
DQ42
158
DQ46
3
VSS
4
DQ4
55
VSS
56
DQ28
107 A10/AP 108
BA1
159
DQ43
160
DQ47
5
DQ0
6
DQ5
57
DQ24
58
DQ29
109
BA0
110
RAS
161
VSS
162
VSS
7
DQ1
8
VSS
59
DQ25
60
VSS
111
VDD
112
VDD
163
DQ48
164
DQ52
9
VSS
10
DQS0
61
VSS
62
DQS3
113
WE
114
S0
165
DQ49
166
DQ53
11
DM0
12
DQS0
63
DM3
64
DQS3
115
CAS
116
ODT0
167
VSS
168
VSS
13
VSS
14
VSS
65
VSS
66
VSS
117
VDD
118
VDD
169
DQS6
170
DM6
15
DQ2
16
DQ6
67
DQ26
68
DQ30
119
A132
120
ODT1
171
DQS6
172
VSS
17
DQ3
18
DQ7
69
DQ27
70
DQ31
121
S1
122
NC
173
VSS
174
DQ54
19
VSS
20
VSS
71
VSS
72
VSS
123
VDD
124
VDD
175
DQ50
176
DQ55
21
DQ8
22
DQ12
73
CKE0
74
CKE1
125
TEST
126 VREFCA 177
DQ51
178
VSS
23
DQ9
24
DQ13
75
VDD
76
VDD
127
VSS
128
VSS
179
VSS
180
DQ60
25
VSS
26
VSS
77
NC
78
A152
129
DQ32
130
DQ36
181
DQ56
182
DQ61
27
DQS1
28
DM1
79
BA2
80
A142
131
DQ33
132
DQ37
183
DQ57
184
VSS
29
DQS1
30
RESET
81
VDD
82
VDD
133
VSS
134
VSS
185
VSS
186
DQS7
31
VSS
32
VSS
83 A12/BC
84
A11
135
DQS4
136
DM4
187
DM7
188
DQS7
33
DQ10
34
DQ14
85
A9
86
A7
137
DQS4
138
VSS
189
VSS
190
VSS
35
DQ11
36
DQ15
87
VDD
88
VDD
139
VSS
140
DQ38
191
DQ58
192
DQ62
37
VSS
38
VSS
89
A8
90
A6
141
DQ34
142
DQ39
193
DQ59
194
DQ63
39
DQ16
40
DQ20
91
A5
92
A4
143
DQ35
144
VSS
195
VSS
196
VSS
41
DQ17
42
DQ21
93
VDD
94
VDD
145
VSS
146
DQ44
197
SA0
198
EVENT
43
VSS
44
VSS
95
A3
96
A2
147
DQ40
148
DQ45
199 VDDSPD 200
SDA
45
DQS2
46
DM2
97
A1
98
A0
149
DQ41
150
VSS
201
SA1
202
SCL
47
DQS2
48
VSS
99
VDD
100
VDD
151
VSS
152
DQS5
203
VTT
204
VTT
49
VSS
50
DQ22
101
CK0
102
CK1
153
DM5
154
DQS5
51
DQ18
52
DQ23
103
CK0
104
CK1
155
VSS
156
VSS
NC = No Connect; RFU = Reserved Future Use
1. TEST (pin 125) is reserved for bus analysis probes and is NC on normal memory modules.
2. This address might be connected to NC balls of the DRAMs (depending on density); either way they will be connected to the termination resistor.
Rev. 0.2 / Feb. 2010
8
Functional Block Diagram
SPD/TS
VREFCA
VREFDQ
D0–D3
VDD
D0–D3
D0–D3
VSS
D0–D3, SPD, Temp sensor
CK0
D0–D3
CK0
D0–D3
Terminated at near
card edge
ODT1
NC
S1
NC
EVENT
Temp Sensor
RESET
D0-D3
D0
D1
D2
D3
Vtt
A[O:N]/BA[O:N]
ODT
Vtt
VDDSPD
CK1
A[O:N]/BA[O:N]
ODT
SDA
WP
CK1
240ohm
+/-1%
ODT
CKE
Address and Control Lines
A[O:N]/BA[O:N]
CK
CKE
(SPD)
Vtt
240ohm
+/-1%
D3
CK
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CKE
CK
CK
A[O:N]/BA[O:N]
ODT0
CK0
CKE0
WE
CK0
CK
WE
CAS
CAS
WE
ZQ
SCL
A0
A1
A2
SCL
SA0
SA1
240ohm
+/-1%
D2
WE
CK
CAS
ZQ
SDA
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
EVENT
D1
WE
CAS
RAS
CS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
DQS6
DQS6
DM6
DQ [48:55]
DQS7
DQS7
DM7
DQ [56:63]
ZQ
SCL
Sensor
A0 Temp
(with SPD)
A1
A2
EVENT
SCL
SA0
SA1
240ohm
+/-1%
D0
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
DQS4
DQS4
DM4
DQ [32:39]
DQS5
DQS5
DM5
DQ [40:47]
ZQ
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
RAS
DQS2
DQS2
DM2
DQ [16:23]
DQS3
DQS3
DM3
DQ [24:31]
RAS
CS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
RAS
DQS0
DQS0
DM0
DQ [0:7]
DQS1
DQS1
DM1
DQ [8:15]
CAS
S0
RAS
1GB, 128Mx64 Module(1Rank of x16)
NOTES
1. DQ wiring may differ from that shown
however, DQ, DM, DQS, and DQS relationships are maintained as shown
Rank 0
Vtt
Vtt
VDD
Rev. 0.2 / Feb. 2010
9
ODT1
240ohm
+/-1%
SDA
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
EVENT
ODT
CK
CKE
D4
SCL
A0
A1
A2
SCL
SA0
SA1
(SPD)
SDA
WP
Vtt
SPD/TS
VREFCA
VREFDQ
D0–D7
VDD
D0–D7
VSS
D0–D7, SPD, Temp sensor
D0–D7
CK0
D0–D3
CK1
D0–D7
CK0
D0–D3
CK1
D0–D7
EVENT
Temp Sensor
RESET
D0-D7
D4
V1
D0
V2
V2
D5
D1
V3
V3
D6
D2
V4
V4
D7
Vtt
A[O:N]/BA[O:N]
ODT
ODT
CK
CKE
CK
A[O:N]/BA[O:N]
240ohm
+/-1%
D7
WE
A[O:N]/BA[O:N]
ODT
CK
CKE
V1
CK
CKE
CK
ZQ
Vtt
VDDSPD
240ohm
+/-1%
D6
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CAS
CK
ZQ
WE
CAS
RAS
CS
240ohm
+/-1%
D5
WE
CAS
RAS
CS
ZQ
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
RAS
ODT
CK
D3
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
ODT
240ohm
+/-1%
A[O:N]/BA[O:N]
CK
CKE
CK
A[O:N]/BA[O:N]
240ohm
+/-1%
D2
ZQ
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
WE
ZQ
CKE
CAS
RAS
CS
D1
WE
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CAS
DQS6
DQS6
DM6
DQ [48:55]
DQS7
DQS7
DM7
DQ [56:63]
RAS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
DQS4
DQS4
DM4
DQ [32:39]
DQS5
DQS5
DM5
DQ [40:47]
ZQ
WE
CK
CAS
RAS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
DQS2
DQS2
DM2
DQ [16:23]
DQS3
DQS3
DM3
DQ [24:31]
240ohm
+/-1%
D3
Vtt
WE
SCL
A0 Temp Sensor
(with SPD)
A1
A2
EVENT
SCL
SA0
SA1
A[O:N]/BA[O:N]
CK1
ZQ
CK
CAS
CK1
CKE1
S1
RAS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
ODT
CK
CKE
A[O:N]/BA[O:N]
240ohm
+/-1%
D0
CK
A[O:N]/BA[O:N]
ODT0
CK0
CKE0
WE
CK0
ZQ
WE
CAS
RAS
LDQS
LDQS
LDM
DQ [0:7]
UDQS
UDQS
UDM
DQ [8:15]
CS
DQS0
DQS0
DM0
DQ [0:7]
DQS1
DQS1
DM1
DQ [8:15]
CAS
S0
RAS
2GB, 256Mx64 Module(2Rank of x16)
Address and Control Lines
NOTES
1. DQ wiring may differ from that shown
however, DQ, DM, DQS, and DQS relationships are maintained as shown
Rank 0
Rank 1
Vtt
Vtt
Vtt
VDD
Rev. 0.2 / Feb. 2010
VDD
10
240ohm
+/-1%
SCL
A0 Temp Sensor
(with SPD)
A1
A2
EVENT
SCL
SA0
SA1
A[O:N]/BA[O:N]
ODT
EVENT
CK
CKE
SCL
A0
A1
A2
SCL
SA0
SA1
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
(SPD)
SDA
WP
Vtt
LDQS
LDQS
LDM
DQ [0:7]
ZQ
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
WE
D5
A[O:N]/BA[O:N]
ODT
CK
CKE
WE
SPD/TS
VREFCA
VREFDQ
D0–D7
VDD
D0–D7
VSS
D0–D7, SPD, Temp sensor
CK0
D0–D7
CK0
D0–D7
CK1
S1
NC
ODT1
CKE1
NC
EVENT
Temp Sensor
RESET
D0-D7
V1
D4
D0
ZQ
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
NC
V2
V2
D5
D1
V3
V3
D6
D2
V4
V4
D7
D3
240ohm
+/-1%
D7
WE
CAS
LDQS
LDQS
LDM
DQ [0:7]
RAS
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
D3
DQS7
DQS7
DM7
DQ[56:63]
CS
ZQ
WE
CAS
RAS
CS
DQS
DQS
DM
DQ [0:7]
240ohm
+/-1%
Terminated near
card edge
CK1
V1
DQS3
DQS3
DM3
Q[48:55]
D0–D7
240ohm
+/-1%
D6
CK
CAS
RAS
240ohm
+/-1%
ZQ
CAS
DQS5
DQS5
DM5
DQ[40:47]
A[O:N]/BA[O:N]
ODT
CK
CKE
DQS
DQS
DM
DQ [0:7]
CS
A[O:N]/BA[O:N]
ODT
CK
WE
CK
CKE
240ohm
+/-1%
D2
CK
CAS
ZQ
WE
CAS
D1
DQS3
DQS3
DM3
DQ[24:31]
RAS
240ohm
+/-1%
CS
ZQ
DQS
DQS
DM
DQ [0:7]
CS
DQS4
DQS4
DM4
Q[32:39]
RAS
CS
DQS
DQS
DM
DQ [0:7]
RAS
DQS2
DQS2
DM2
Q[16:23]
Vtt
VDDSPD
Vtt
WE
D4
SDA
Vtt
ZQ
CK
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
WE
D0
DQS
DQS
DM
DQ [0:7]
CAS
DQS1
DQS1
DM1
DQ[8:15]
RAS
240ohm
+/-1%
CS
CK0
CKE0
ODT0
WE
CK0
CAS
ZQ
CAS
RAS
DQS
DQS
DM
DQ [0:7]
CS
DQS0
DQS0
DM0
DQ[0:7]
RAS
S0
2GB, 256Mx64 Module(1Rank of x8)
Address and Control Lines
NOTES
1. DQ wiring may differ from that
shown however, DQ, DM, DQS, and
DQS relationships are maintained as
shown
Rank 0
Rev. 0.2 / Feb. 2010
11
VDD
SCL
A0
A1
A2
(SPD)
V4
D0
EVENT
Rev. 0.2 / Feb. 2010
V9
D12
V8
Rank 1
D1
V5
D10
V2
V5
D2
D11
V6
D5
V1
V3
Rank 0
D6
V7
V4
SDA
NOTES
1. DQ wiring may differ from that shown
however, DQ, DM, DQS, and DQS relationships are maintained as shown
V1
V3
SDA
WP
SCL
A0 Temp Sensor
(with SPD)
A1
A2
EVENT
D3
D13
D7
V6
Vtt
V1
D15
V7
V9
V8
D4
D14
DQS7
DQS7
DM7
DQ[56:43]
A[O:N]/BA[O:N]
ODT
DQS6
DQS6
DM6
DQ[48:55]
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CKE
CK
D7
WE
240ohm
+/-1%
DQS
DQS
DM
DQ [0:7]
ZQ
A[O:N]/BA[O:N]
ODT
CK
CKE
WE
D5
CK
CAS
CK
WE
240ohm
+/-1%
ZQ
Vtt
V2
D9
DQS4
DQS4
DM4
DQ[32:39]
A[O:N]/BA[O:N]
ODT
WE
CK
CAS
RAS
CS
CK
CKE
240ohm
+/-1%
D6
CAS
RAS
CS
ZQ
DQS
DQS
DM
DQ [0:7]
RAS
240ohm
+/-1%
D12
CAS
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CAS
D13
ZQ
DQS
DQS
DM
DQ [0:7]
CS
A[O:N]/BA[O:N]
ODT
CK
CKE
240ohm
+/-1%
ZQ
DQS
DQS
DM
DQ [0:7]
RAS
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CK
CAS
D15
Vtt
CS
A[O:N]/BA[O:N]
ODT
CK
CKE
WE
CK
CAS
WE
CAS
240ohm
+/-1%
ZQ
WE
RAS
CS
CS
RAS
RAS
CS
CS
A[O:N]/BA[O:N]
ODT
RAS
ODT
A[O:N]/BA[O:N]
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CKE
WE
240ohm
+/-1%
D14
DQS
DQS
DM
DQ [0:7]
D10
D8
SCL
SA0
SA1
ZQ
DQS
DQS
DM
DQ [0:7]
240ohm
+/-1%
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
SCL
SA0
SA1
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
CK
ZQ
CK
CAS
WE
WE
CAS
240ohm
+/-1%
240ohm
+/-1%
D4
DQS
DQS
DM
DQ [0:7]
D8
LDQS
LDQS
LDM
DQ [0:7]
ZQ
WE
ODT0
CK0
CK0
CKE0
CK
CKE
WE
CK
CAS
RAS
CS
CS
RAS
RAS
240ohm
+/-1%
ZQ
Cterm
Vtt
DQS
DQS
DM
DQ [0:7]
D9
CAS
A[O:N]/BA[O:N]
ODT
CK
CKE
CK
WE
CAS
D2
240ohm
+/-1%
ZQ
VDD
Vtt
D3
LDQS
LDQS
LDM
DQ [0:7]
CS
A[O:N]/BA[O:N]
ODT
CK
CK
CKE
240ohm
+/-1%
ZQ
LDQS
LDQS
LDM
DQ [0:7]
RAS
A[O:N]/BA[O:N]
A[O:N]/BA[O:N]
ODT
CK
WE
CAS
CK
CKE
240ohm
+/-1%
D0
ZQ
S0
A[O:N]/BA[O:N]
CK1
WE
CKE1
ODT1
CK
CKE
CK
WE
ODT
240ohm
+/-1%
ZQ
DQS
DQS
DM
DQ [0:7]
RAS
LDQS
LDQS
LDM
DQ [0:7]
D1
CAS
RAS
CS
ZQ
Cterm
CS
DQS
DQS
DM
DQ [0:7]
RAS
DQS0
DQS0
DM0
DQ[0:7]
CS
DQS
DQS
DM
DQ [0:7]
CS
240ohm
+/-1%
D11
DQS1
DQS1
DM1
DQ[8:15]
DQS2
DQS2
DM2
DQ[6:23]
CK1
ZQ
CAS
CS
RAS
DQS
DQS
DM
DQ [0:7]
WE
RAS
S1
DQS3
DQS3
DM3
DQ[24:31]
CAS
4GB, 512Mx64 Module(2Rank of x8)
DQS5
DQS5
DM5
DQ[40:47]
Vtt
VDDSPD
SPD/TS
VREFCA
VREFDQ
D0–D15
VDD
D0–D15
D0–D15
VSS
D0–D15, SPD, Temp sensor
CK0
D0–D7
CK1
D8–D15
CK0
D0–D7
CK1
D8–D15
CKE0
D0-D7
CKE1
D8-D15
S0
D0–D7
S1
D8–D15
ODT0
D0–D7
ODT1
D8–D15
EVENT
Temp Sensor
RESET
D0-D15
12
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,
- 0.4 V ~ 1.975 V
V
1
C
1, 2
VIN, VOUT Voltage on any pin relative to Vss
TSTG
-55 to +100
Storage Temperature
o
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Temperature Range
Symbol
TOPER
Parameter
Rating
Normal Operating Temperature Range
0 to 85
Extended Temperature Range
85 to 95
Units
Notes
C
1,2
oC
1,3
o
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It
is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). Hynix DDR3 SDRAMs support Auto Self-Refresh and Extended Temperature Range and please refer to Hynix component datasheet
and/or the DIMM SPD for tREFI requirements in the Extended Temperature Range.
Rev. 0.2 / Feb. 2010
13
AC & DC Operating Conditions
Recommended DC Operating Conditions
Recommended DC Operating Conditions
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
1.575
V
1,2
1.575
V
1,2
Min.
Typ.
Max.
Supply Voltage
1.425
1.500
Supply Voltage for Output
1.425
1.500
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
AC & DC Input Measurement Levels
AC and DC Logic Input Levels for Single-Ended Signals
AC and DC Input Levels for Single-Ended Command and Address Signals
Single Ended AC and DC Input Levels for Command and ADDress
DDR3-800/1066/1333/1600
Symbol
VIH.CA(DC100)
VIL.CA(DC100)
VIH.CA(AC175)
VIL.CA(AC175)
VIH.CA(AC150)
VIL.CA(AC150)
VRefCA(DC)
Parameter
Unit
Notes
VDD
Vref - 0.100
Note2
Vref - 0.175
Note2
Vref - 0.150
V
V
V
V
V
V
1
1
1, 2
1, 2
1, 2
1, 2
0.51 * VDD
V
3, 4
Min
Max
DC input logic high
DC input logic low
AC input logic high
AC input logic low
AC Input logic high
AC input logic low
Vref + 0.100
VSS
Vref + 0.175
Note2
Vref + 0.150
Note2
Reference Voltage for ADD, CMD inputs
0.49 * VDD
Notes:
1. For input only pins except RESET, Vref = VrefCA (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 27.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefCA(DC) by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Rev. 0.2 / Feb. 2010
14
AC and DC Input Levels for Single-Ended Signals
DDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as specified in the table
below. DDR3 SDRAM will also support corresponding tDS values (Table 41 and Table 47 in “ DDR3 Device
Operation”) as well as derating tables in Table 44 of “DDR3 Device Operation” depending on Vih/Vil AC levels.
Single Ended AC and DC Input Levels for DQ and DM
DDR3-800/1066
Symbol
Unit Notes
Min
VIH.CA(DC100)
VIL.CA(DC100)
VIH.CA(AC175)
VIL.CA(AC175)
VIH.CA(AC150)
VIL.CA(AC150)
VRefDQ(DC)
DDR3-1333/1600
Parameter
DC input logic high
Vref + 0.100
DC input logic low
VSS
AC input logic high
Vref + 0.175
AC input logic low
Note2
AC Input logic high
Vref + 0.150
AC input logic low
Note2
Reference Voltage for DQ,
0.49 * VDD
DM inputs
Max
Min
Max
VDD
Vref - 0.100
Note2
Vref - 0.175
Note2
Vref - 0.150
Vref + 0.100
VSS
Vref + 0.150
Note2
VDD
Vref - 0.100
Note2
Vref - 0.150
V
V
V
V
V
V
1
1
1, 2
1, 2
1, 2
1, 2
0.51 * VDD
0.49 * VDD
0.51 * VDD
V
3, 4
Notes:
1. Vref = VrefDQ (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 27.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Rev. 0.2 / Feb. 2010
15
Vref Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VRefCA and VRefDQ are illustrated in
figure below. It shows a valid reference voltage VRef (t) as a function of time. (VRef stands for VRefCA and
VRefDQ likewise).
VRef (DC) is the linear average of VRef (t) over a very long period of time (e.g. 1 sec). This average has to
meet the min/max requirements in the table “Differential Input Slew Rate Definition” on page 22. Furthermore VRef (t) may temporarily deviate from VRef (DC) by no more than +/- 1% VDD.
voltage
VDD
VRef ac-noise
VRef(DC)
VRef(t)
VRef(DC)max
VDD/2
VRef(DC)min
VSS
time
Illustration of VRef(DC) tolerance and VRef ac-noise limits
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and VIL(DC) are dependent on VRef.
“VRef” shall be understood as VRef(DC), as defined in figure above.
This clarifies that dc-variations of VRef affect the absolute voltage a signal has to reach to achieve a valid
high or low level and therefore the time to which setup and hold is measured. System timing and voltage
budgets need to account for VRef(DC) deviations from the optimum position within the data-eye of the input
signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and
voltage associated with VRefac-noise. Timing and voltage effects due to ac-noise on VRef up to the specified limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.
Rev. 0.2 / Feb. 2010
16
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
tDVAC
Differential Input Voltage(i.e.DQS - DQS#, CK - CK#)
VIL.DIFF.AC.MIN
VIL.DIFF.MIN
0
half cycle
VIL.DIFF.MAX
VIL.DIFF.AC.MAX
tDVAC
time
Definition of differential ac-swing and “time above ac-level” tDVAC
Rev. 0.2 / Feb. 2010
17
Differential swing requirements for clock (CK - CK) and strobe (DQS-DQS)
Differential AC and DC Input Levels
DDR3-800, 1066, 1333, & 1600
Symbol
Parameter
VIHdiff
VILdiff
VIHdiff (ac)
VILdiff (ac)
Differential input high
Differential input logic low
Differential input high ac
Differential input low ac
Unit Notes
Min
Max
+ 0.200
Note 3
2 x (VIH (ac) - Vref)
Note 3
Note 3
- 0.200
Note 3
2 x (VIL (ac) - Vref)
V
V
V
V
1
1
2
2
Notes:
1. Used to define a differential signal slew-rate.
2. For CK - CK use VIH/VIL (ac) of AADD/CMD and VREFCA; for DQS - DQS, DQSL, DQSL, DQSU, DQSU use VIH/VIL
(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low levels is used for a signal group, then the reduced level
applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 27.
Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS
Slew Rate [V/ns]
tDVAC [ps]
@ |VIH/Ldiff (ac)| = 350mV
min
max
tDVAC [ps]
@ |VIH/Ldiff (ac)| = 300mV
min
max
> 4.0
75
-
175
-
4.0
57
-
170
-
3.0
50
-
167
-
2.0
38
-
163
1.8
34
-
162
-
1.6
29
-
161
-
1.4
22
-
159
-
1.2
13
-
155
-
1.0
0
-
150
-
< 1.0
0
-
150
-
Rev. 0.2 / Feb. 2010
18
Single-ended requirements for differential signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, of DQSU) has
also to comply with certain requirements for single-ended signals.
CK and CK have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH
(ac) / VIL (ac)) for ADD/CMD signals) in every half-cycle.
DQS, DQSL, DQSU, DQS, DQSL have to reach VSEHmin / VSELmax (approximately the ac-levels (VIH (ac)
/ VIL (ac)) for DQ signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g., if
VIH.CA(AC150)/VIL.CA(AC150) is used for ADD/CMD signals, then these ac-levels apply also for the singleended signals CK and CK.
VDD or VDDQ
VSEHmin
VSEH
VDD/2 or VDDQ/2
CK or DQS
VSELmax
VSS or VSSQ
VSEL
time
Single-ended requirements for differential signals.
Note that, while ADD/CMD and DQ signal requirements are with respect to Vref, the single-ended components of differential signals have a requirement with respect to VDD / 2; this is nominally the same. the
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended
components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing,
but adds a restriction on the common mode characteristics of these signals.
Rev. 0.2 / Feb. 2010
19
Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU
DDR3-800, 1066, 1333, & 1600
Symbol
VSEH
VSEL
Parameter
Unit Notes
Single-ended high level for strobes
Single-ended high level for Ck, CK
Single-ended low level for strobes
Single-ended low level for CK, CK
Min
Max
(VDD / 2) + 0.175
(VDD /2) + 0.175
Note 3
Note 3
Note 3
Note 3
(VDD / 2) = 0.175
(VDD / 2) = 0.175
V
V
V
V
1,2
1,2
1,2
1,2
Notes:
1. For CK, CK use VIH/VIL (ac) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL (ac)
of DQs.
2. VIH (ac)/VIL (ac) for DQs is based on VREFDQ; VIH (ac)/VIL (ac) for ADD/CMD is based on VREFCA; if a reduced
ac-high or ac-low level is used for a signal group, then the reduced level applies also here.
3. These values are not defined; however, the single-ended signals Ck, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU
need to be within the respective limits (VIH (dc) max, VIL (dc) min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to “Overshoot and Undershoot Specifications” on page 27.
Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and
strobe, each cross point voltage of differential input signals (CK, CK and DQS, DQS) must meet the
requirements in the table below. The differential input cross point voltage VIX is measured from the actual
cross point of true and complement signals to the midlevel between of VDD and VSS
VDD
CK, DQS
VIX
VDD/2
VIX
VIX
CK, DQS
VSS
Vix Definition
Rev. 0.2 / Feb. 2010
20
Cross point voltage for differential input signals (CK, DQS)
DDR3-800, 1066, 1333, & 1600
Symbol
Parameter
Unit Notes
Min
Max
VIX
Differential Input Cross Point Voltage
relative to VDD/2 for CK, CK
-150
-175
150
175
mV
mV
VIX
Differential Input Cross Point Voltage
relative to VDD/2 for DQS, DQS
-150
150
mV
1
Notes:
1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CK and CK are
monotonic with a single-ended swing VSEL / VSEH of at least VDD/2 +/-250 mV, and when the differential
slew rate of CK - CK is larger than 3 V/ns.
2. Refer to the table “Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL or DQSU” on page 20
for VSEL and VSEH standard values.
Slew Rate Definitions for Single-Ended Input Signals
See 7.5 “Address / Command Setup, Hold and Derating” on page 137 in “DDR3 Device Operation” for single-ended slew rate definitions for address and command signals.
See 7.6 “Data Setup, Hold and Slew Rate Derating” on page 144 in “DDR3 Device Operation” for singleended slew rate definition for data signals.
Rev. 0.2 / Feb. 2010
21
Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in table
and figure below.
Differential Input Slew Rate Definition
Measured
Description
Min
Differential input slew rate for rising edge
(CK-CK and DQS-DQS)
Differential input slew rate for falling edge
(CK-CK and DQS-DQS)
Defined by
Max
VILdiffmax
VIHdiffmin [VIHdiffmin-VILdiffmax] / DeltaTRdiff
VIHdiffmin
VILdiffmax [VIHdiffmin-VILdiffmax] / DeltaTFdiff
Notes:
Differential Input Voltage (i.e. DQS-DQS; CK-CK)
The differential signal (i.e. CK-CK and DQS-DQS) must be linear between these thresholds.
Delta
TRdiff
vIHdiffmin
0
vILdiffmax
Delta
TFdiff
Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
Differential Input Slew Rate Definition for DQS, DQS and CK, CK
Rev. 0.2 / Feb. 2010
22
AC & DC Output Measurement Levels
Single Ended AC and DC Output Levels
Table below shows the output levels used for measurements of single ended signals.
Single-ended AC and DC Output Levels
Symbol
Parameter
VOH(DC)
DC output high measurement level (for IV curve linearity)
DDR3-800, 1066,
1333 and 1600
0.8 x VDDQ
Unit
Notes
V
V
DC output low measurement level (for IV curve linearity)
0.5 x VDDQ
0.2 x VDDQ
AC output high measurement level (for output SR)
VTT + 0.1 x VDDQ
V
1
AC output low measurement level (for output SR)
VTT - 0.1 x VDDQ
V
1
VOM(DC)
DC output mid measurement level (for IV curve linearity)
VOL(DC)
VOH(AC)
VOL(AC)
V
Notes:
1. The swing of ± 0.1 x VDDQ is based on approximately 50% of the static single ended output high or low
swing with a driver impedance of 40Ω and an effective test load of 25Ω to VTT = VDDQ / 2.
Differential AC and DC Output Levels
Table below shows the output levels used for measurements of single ended signals.
Differential AC and DC Output Levels
DDR3-800, 1066,
Symbol
Parameter
VOHdiff (AC)
AC differential output high measurement level (for output SR)
1333 and 1600
+ 0.2 x VDDQ
VOLdiff (AC)
AC differential output low measurement level (for output SR)
- 0.2 x VDDQ
Unit
Notes
V
1
V
1
Notes:
1. The swing of ± 0.2 x VDDQ is based on approximately 50% of the static differential output high or low
swing with a driver impedance of 40Ω and an effective test load of 25Ω to VTT = VDDQ/2 at each of the
differential outputs.
Rev. 0.2 / Feb. 2010
23
Single Ended Output Slew Rate
When the Reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOL(AC) and VOH(AC) for single ended signals are shown in table and figure below.
Single-ended Output slew Rate Definition
Measured
Description
Defined by
From
To
Single-ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC)-VOL(AC)] / DeltaTRse
Single-ended output slew rate for falling edge
VOH(AC)
VOL(AC)
[VOH(AC)-VOL(AC)] / DeltaTFse
Notes:
1. Output slew rate is verified by design and characterisation, and may not be subject to production test.
Single Ended Output Voltage(l.e.DQ)
Delta TRse
vOH(AC)
V∏
vOl(AC)
Delta TFse
Single Ended Output Slew Rate Definition
Single Ended Output slew Rate Definition
Output Slew Rate (single-ended)
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Single-ended Output Slew Rate
SRQse
2.5
5
2.5
5
2.5
5
TBD
5
Units
V/ns
Description: SR; Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Rev. 0.2 / Feb. 2010
24
Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined
and measured between VOLdiff (AC) and VOHdiff (AC) for differential signals as shown in table and Figure
below.
Differential Output Slew Rate Definition
Measured
Description
Defined by
From
To
Differential output slew rate for rising edge
VOLdiff (AC)
VOHdiff (AC)
[VOHdiff (AC)-VOLdiff (AC)] / DeltaTRdiff
Differential output slew rate for falling edge
VOHdiff (AC)
VOLdiff (AC)
[VOHdiff (AC)-VOLdiff (AC)] / DeltaTFdiff
Notes:
1. Output slew rate is verified by design and characterization, and may not be subject to production test.
Differential Output Voltage(i.e. DQS-DQS)
Delta
TRdiff
vOHdiff(AC)
O
vOLdiff(AC)
Delta
TFdiff
Differential Output Slew Rate Definition
Differential Output slew Rate Definition
Differential Output Slew Rate
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Differential Output Slew Rate
SRQdiff
5
10
5
10
5
10
TBD
10
Units
V/ns
Description: SR; Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
Rev. 0.2 / Feb. 2010
25
Reference Load for AC Timing and Output Slew Rate
Figure below represents the effective reference load of 25 ohms used in defining the relevant AC timing
parameters of the device as well as output slew rate measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the
actual load presented by a production tester. System designers should use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers correlate to their production
test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
VDDQ
CK, CK
DUT
DQ
DQS
DQS
25 Ohm
VTT = VDDQ/2
Reference Load for AC Timing and Output Slew Rate
Rev. 0.2 / Feb. 2010
26
Overshoot and Undershoot Specifications
Address and Control Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Address and Control Pins
DDR3- DDR3- DDR3- DDR3-
Parameter
Maximum peak amplitude allowed for overshoot area. (See Figure below)
Maximum peak amplitude allowed for undershoot area. (See Figure below)
Maximum overshoot area above VDD (See Figure below)
Maximum undershoot area below VSS (See Figure below)
800
1066
1333
1600
0.4
0.4
0.67
0.67
0.4
0.4
0.5
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.33
0.33
Units
V
V
V-ns
V-ns
(A0-A15, BA0-BA3, CS, RAS, CAS, WE, CKE, ODT)
See figure below for each parameter definition
M axim um A m plitude
O vershoot A rea
V olts
(V)
VDD
V SS
U ndershoot Area
M axim um A m plitud e
Tim e (ns)
Add ress and Control O vershoot and U ndershoot D efinition
Address and Control Overshoot and Undershoot Definition
Rev. 0.2 / Feb. 2010
27
Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe and Mask
DDR3- DDR3- DDR3- DDR3-
Parameter
Maximum peak amplitude allowed for overshoot area. (See Figure below)
Maximum peak amplitude allowed for undershoot area. (See Figure below)
Maximum overshoot area above VDD (See Figure below)
Maximum undershoot area below VSS (See Figure below)
800
1066
1333
1600
0.4
0.4
0.25
0.25
0.4
0.4
0.19
0.19
0.4
0.4
0.15
0.15
0.4
0.4
0.13
0.13
Units
V
V
V-ns
V-ns
(CK, CK, DQ, DQS, DQS, DM)
See figure below for each parameter definition
M a x im u m A m p litu d e
O v e rs h o o t A re a
V o lts
(V )
VDDQ
VSSQ
U n d e rs h o o t A re a
M a x im u m A m p litu d e
T im e (n s)
C lo c k , D a ta S tro b e a n d M a sk O v e rs h o o t a n d U n d e rs h o o t D e fin itio n
Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
Rev. 0.2 / Feb. 2010
28
Refresh parameters by device density
Refresh parameters by device density
Parameter
REF command ACT or
REF command time
Average periodic
refresh interval
Rev. 0.2 / Feb. 2010
RTT_Nom Setting
512Mb
1Gb
2Gb
4Gb
8Gb
Units
tRFC
90
110
160
300
350
ns
7.8
7.8
7.8
7.8
7.8
us
3.9
3.9
3.9
3.9
3.9
us
tREFI
0 °C ≤ TCASE ≤ 85 °C
85 °C < TCASE ≤ 95 °C
29
Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 34.
Speed Bin
DDR3-800E
CL - nRCD - nRP
6-6-6
Unit
Parameter
Symbol
min
max
Internal read command to first data
tAA
15
20
ns
ACT to internal read or write delay time
tRCD
15
—
ns
PRE command period
tRP
15
—
ns
ACT to ACT or REF command period
tRC
52.5
—
ns
ACT to PRE command period
tRAS
37.5
9 * tREFI
ns
CL = 5
CL = 6
CWL = 5
tCK(AVG)
CWL = 5
tCK(AVG)
Reserved
2.5
3.3
ns
1, 2, 3, 4
ns
1, 2, 3
Supported CL Settings
6
nCK
Supported CWL Settings
5
nCK
Rev. 0.2 / Feb. 2010
Notes
30
DDR3-1066 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 34.
Speed Bin
DDR3-1066F
CL - nRCD - nRP
Parameter
Symbol
Unit
7-7-7
min
max
Internal read command to
first data
tAA
13.125
20
ns
ACT to internal read or
write delay time
tRCD
13.125
—
ns
PRE command period
tRP
13.125
—
ns
ACT to ACT or REF
command period
tRC
50.625
—
ns
ACT to PRE command
period
tRAS
37.5
9 * tREFI
ns
CL = 5
CL = 6
CL = 7
CL = 8
Note
CWL = 5
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 5
CWL = 6
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
ns
1, 2, 3, 5
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3
2.5
3.3
1.875
< 2.5
Reserved
1.875
< 2.5
Supported CL Settings
6, 7, 8
nCK
Supported CWL Settings
5, 6
nCK
Rev. 0.2 / Feb. 2010
31
DDR3-1333 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 34.
Speed Bin
DDR3-1333H
CL - nRCD - nRP
Parameter
Symbol
Unit
9-9-9
min
max
Internal read command
to first data
tAA
13.5
(13.125)8
20
ns
ACT to internal read or
write delay time
tRCD
13.5
(13.125)8
—
ns
PRE command period
tRP
13.5
(13.125)8
—
ns
ACT to ACT or REF
command period
tRC
49.5
(49.125)8
—
ns
ACT to PRE command
period
tRAS
36
9 * tREFI
ns
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
Note
CWL = 5
tCK(AVG)
Reserved
ns
1,2, 3,4, 6
CWL = 6, 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
ns
1, 2, 3, 6
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 6
CWL = 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 4, 6
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 6
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5, 6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5, 6
tCK(AVG)
2.5
3.3
1.875
< 2.5
Reserved
1.875
< 2.5
1.5
<1.875
ns
4
1, 2, 3
Reserved
ns
ns
Supported CL Settings
6, 8, (7), 9, (10)
nCK
Supported CWL Settings
5, 6, 7
nCK
CL = 10
CWL = 7
Rev. 0.2 / Feb. 2010
tCK(AVG)
Reserved
1.5
<1.875
32
DDR3-1600 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 34.
Speed Bin
DDR3-1600K
CL - nRCD - nRP
Parameter
Symbol
Unit
11-11-11
min
max
Internal read command
to first data
tAA
13.75
(13.125)8
20
ns
ACT to internal read or
write delay time
tRCD
13.75
(13.125)8
—
ns
PRE command period
tRP
13.75
(13.125)8
—
ns
ACT to ACT or REF
command period
tRC
48.75
(48.125)8
—
ns
ACT to PRE command
period
tRAS
35
9 * tREFI
ns
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
Note
CWL = 5
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 7
CWL = 6, 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
ns
1, 2, 3, 7
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 4, 7
CWL = 7
tCK(AVG)
ns
1, 2, 3, 4, 7
CWL = 8
tCK(AVG)
ns
4
CWL = 5
tCK(AVG)
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 7
CWL = 7
tCK(AVG)
ns
1, 2, 3, 4, 7
CWL = 8
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5, 6
tCK(AVG)
ns
4
CWL = 7
tCK(AVG)
ns
1, 2, 3, 4, 7
CWL = 8
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5, 6 tCK(AVG)
CL = 10
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
CWL = 5, 6,7 tCK(AVG)
CL = 11
tCK(AVG)
CWL = 8
2.5
3.3
1.875
< 2.5
Reserved
Reserved
Reserved
1.875
< 2.5
Reserved
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.25
<1.5
ns
4
ns
ns
1, 2, 3, 7
1,2,3,4
ns
4
ns
1, 2, 3
Supported CL Settings
6, (7), 8, (9), 10, 11
nCK
Supported CWL Settings
5, 6, 7, 8
nCK
Rev. 0.2 / Feb. 2010
33
Speed Bin Table Notes
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
Notes:
1, The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making
a selection of tCK (AVG), both need to be fulfilled: Requirements from CL setting as well as requirements
from CWL setting.
2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (AVG) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] =
tAA [ns] / tCK (AVG) [ns], rounding up to the next ‘Supported CL’.
3. tCK(AVG).MAX limits: Calculate tCK (AVG) = tAA.MAX / CLSELECTED and round the resulting tCK (AVG)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is tCK(AVG).MAX
corresponding to CLSE LECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table
which are not subject to Production Tests but verified by Design/Characterization.
6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table
which are not subject to Production Tests but verified by Design/Characterization.
7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table
which are not subject to Production Tests but verified by Design/Characterization.
8. Hynix DDR3 SDRAM devices support down binning to CL=7 and CL=9, and tAA/tRCD/tRP satisfy minimum value of 13.125 ns. SPD settings are also programmed to match. For example, DDR3 1333H devices
supporting down binning to DDR3-1066F should program 13.125 ns in SPD bytes for tAAmin (Byte 16),
tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600K devices supporting down binning to DDR3-1333H
or DDR3 1600F should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125 ns) for DDR3-1333H
and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3-1600K.
Rev. 0.2 / Feb. 2010
34
Environmental Parameters
Symbol
Parameter
Rating
Units
Notes
1, 3
TOPR
Operating temperature
0 to 65
oC
HOPR
Operating humidity (relative)
10 to 90
%
1
TSTG
Storage temperature
o
C
1
HSTG
Storage humidity (without condensation)
5 to 95
%
1
PBAR
Barometric Pressure (operating & storage)
105 to 69
K Pascal
1, 2
-50 to +100
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only,
and device functional operation at or above the conditions indicated is not implied. Expousure to absolute
maximum rating conditions for extended periods may affect reliablility.
2. Up to 9850 ft.
3. The designer must meet the case temperature specifications for individual module components.
Rev. 0.2 / Feb. 2010
35
Pin Capacitance (VDD=1.5V, VDDQ=1.5V)
1GB: HMT312S6BFR6C
Pin
CK0, CK0
CKE, ODT, CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
Symbol
Min
Max
Unit
CCK
TBD
TBD
pF
CCTRL
TBD
TBD
pF
CI
TBD
TBD
pF
CIO
TBD
TBD
pF
Symbol
Min
Max
Unit
CCK
TBD
TBD
pF
CCTRL
TBD
TBD
pF
CI
TBD
TBD
pF
CIO
TBD
TBD
pF
Symbol
Min
Max
Unit
CCK
TBD
TBD
pF
CCTRL
TBD
TBD
pF
CI
TBD
TBD
pF
CIO
TBD
TBD
pF
Symbol
Min
Max
Unit
CCK
TBD
TBD
pF
CCTRL
TBD
TBD
pF
CI
TBD
TBD
pF
CIO
TBD
TBD
pF
2GB: HMT325S6BFR6C
Pin
CK0, CK0
CKE, ODT, CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
2GB: HMT325S6BFR8C
Pin
CK0, CK0
CKE, ODT, CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
4GB: HMT351S6BFR8C
Pin
CK0, CK0
CKE, ODT, CS
Address, RAS, CAS, WE
DQ, DM, DQS, DQS
Note:
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Rev. 0.2 / Feb. 2010
36
IDD and IDDQ Specification Parameters and Test Conditions
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure
1. shows the setup and test load for IDD and IDDQ measurements.
•
IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R,
IDD4W, IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all
VDD balls of the DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
•
IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all
VDDQ balls of the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR3 SDRAM. They can
be used to support correlation of simulated IO power to actual IO power as outlined in Figure 2. In
DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are using one
merged-power layer in Module PCB.
For IDD and IDDQ measurements, the following definitions apply:
•
”0” and “LOW” is defined as VIN <= VILAC(max).
•
”1” and “HIGH” is defined as VIN >= VIHAC(max).
•
“MID_LEVEL” is defined as inputs are VREF = VDD/2.
•
Timing used for IDD and IDDQ Measurement-Loop Patterns are provided in Table 1.
•
Basic IDD and IDDQ Measurement Conditions are described in Table 2.
•
Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 3 through Table 10.
•
IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting
RON = RZQ/7 (34 Ohm in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ohm in MR1);
RTT_Wr = RZQ/2 (120 Ohm in MR2);
TDQS Feature disabled in MR1
•
Attention: The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time
before actual IDD or IDDQ measurement is started.
• Define D = {CS, RAS, CAS, WE}:= {HIGH, LOW, LOW, LOW}
Define D = {CS, RAS, CAS, WE}:= {HIGH, HIGH, HIGH, HIGH}
Rev. 0.2 / Feb. 2010
37
IDDQ (optional)
IDD
VDD
VDDQ
RESET
CK/CK
DDR3
SDRAM
CKE
CS
RAS, CAS, WE
DQS, DQS
DQ, DM,
TDQS, TDQS
A, BA
ODT
ZQ
VSS
RTT = 25 Ohm
VDDQ/2
VSSQ
Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above
Application specific
memory channel
environment
IDDQ
Test Load
Channel
IO Power
Simulation
IDDQ
Simulation
IDDQ
Simulation
Correction
Channel IO Power
Number
Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported
by IDDQ Measurement
Rev. 0.2 / Feb. 2010
38
Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
DDR3-1066
DDR3-1333
DDR3-1600
7-7-7
9-9-9
11-11-11
tCK
1.875
1.5
1.25
ns
Symbol
Unit
CL
7
9
11
nCK
nRCD
7
9
11
nCK
nRC
27
33
39
nCK
nRAS
20
24
28
nCK
nRP
7
9
11
nCK
1KB page size
20
20
24
nCK
2KB page size
27
30
32
nCK
1KB page size
4
4
5
nCK
nFAW
nRRD
6
5
6
nCK
nRFC -512Mb
2KB page size
48
60
72
nCK
nRFC-1 Gb
59
74
88
nCK
nRFC- 2 Gb
86
107
128
nCK
nRFC- 4 Gb
160
200
240
nCK
nRFC- 8 Gb
187
234
280
nCK
Table 2 -Basic IDD and IDDQ Measurement Conditions
Symbol
Description
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT and
IDD0
PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO: MID-LEVEL;
DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 3); Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 3.
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT,
IDD1
RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to Table 4; DM:
stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table 4); Output Buffer and
RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 4.
Rev. 0.2 / Feb. 2010
39
Symbol
Description
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD2N
Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 5.
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD2NT Address Inputs: partially toggling according to Table 6; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: toggling according to Table 6;
Pattern Details: see Table 6.
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD2P0 Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Slow
Exitc)
Precharge Power-Down Current Fast Exit
IDD2P1
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down Mode: Fast Exitc)
Precharge Quiet Standby Current
IDD2Q
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Active Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
IDD3N
Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all
banks open; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 5.
Active Power-Down Current
IDD3P
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address, Bank
Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks open; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Rev. 0.2 / Feb. 2010
40
Symbol
Description
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Command, Address,
IDD4R
Bank Address Inputs: partially toggling according to Table 7; Data IO: seamless read data burst with different
data between one burst and the next one according to Table 7; DM: stable at 0; Bank Activity: all banks open,
RD commands cycling through banks: 0,0,1,1,2,2,...(see Table 7); Output Buffer and RTT: Enabled in Mode
Registersb); ODT Signal: stable at 0; Pattern Details: see Table 7.
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between WR; Command, Address,
IDD4W
Bank Address Inputs: partially toggling according to Table 8; Data IO: seamless read data burst with different
data between one burst and the next one according to Table 8; DM: stable at 0; Bank Activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,...(see Table 8); Output Buffer and RTT: Enabled in Mode
Registersb); ODT Signal: stable at HIGH; Pattern Details: see Table 8.
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 1; BL: 8a); AL: 0; CS: High between REF; Command,
IDD5B
Address, Bank Address Inputs: partially toggling according to Table 9; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: REF command every nREF (see Table 9); Output Buffer and RTT: Enabled in Mode Registersb);
ODT Signal: stable at 0; Pattern Details: see Table 9.
Self-Refresh Current: Normal Temperature Range
TCASE: 0 - 85 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Normale); CKE:
IDD6
Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Self-Refresh Current: Extended Temperature Range
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Extendede);
IDD6ET
CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Extended Temperature Self-Refresh
operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Rev. 0.2 / Feb. 2010
41
Symbol
Description
Auto Self-Refresh Current
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Enabledd);Self-Refresh Temperature Range (SRT): Normale); CKE:
IDD6TC
Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address, Bank
Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Auto Self-Refresh operation; Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a,f); AL: CL-1; CS:
High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling according to Table
IDD7
10; Data IO: read data burst with different data between one burst and the next one according to Table 10;
DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1,...7) with different addressing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern
Details: see Table 10.
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2]
= 011B; RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature
range
f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 0.2 / Feb. 2010
42
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 3 - IDD0 Measurement-Loop Patterna)
0
3,4
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
0
0
1
1
0
0
00
0
0
F
0
-
1*nRC+1, 2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
D, D
1
1
1
1
0
0
00
0
0
F
0
-
0
-
1*nRC+3, 4
...
1*nRC+nRAS
repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
...
repeat pattern 1...4 until 2*nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
F
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.2 / Feb. 2010
43
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
00000000
0
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 4 - IDD1 Measurement-Loop Patterna)
0
3,4
...
nRCD
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRCD - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
0
0
1
1
0
0
00
0
0
F
0
-
1*nRC+1,2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
D, D
1
1
1
1
0
0
00
0
0
F
0
-
1*nRC+3,4
...
1*nRC+nRCD
...
1*nRC+nRAS
repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
F
...
repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
0
-
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MIDLEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are
MID_LEVEL.
Rev. 0.2 / Feb. 2010
44
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 5 - IDD2N and IDD3N Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
8-11
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
12-15
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
16-19
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
20-23
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
24-17
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
28-31
repeat Sub-Loop 0, use BA[2:0] = 7 instead
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
2
8-11
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2
3
12-15
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3
4
16-19
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
5
20-23
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
6
24-17
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6
7
28-31
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.2 / Feb. 2010
45
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
RD
0
1
0
1
0
0
00
0
0
0
0
00000000
1
D
1
0
0
0
0
0
00
0
0
0
0
-
2,3
D,D
1
1
1
1
0
0
00
0
0
0
0
-
4
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
5
D
1
0
0
0
0
0
00
0
0
F
0
-
D,D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
Command
Static High
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 7 - IDD4R and IDDQ4R Measurement-Loop Patterna)
6,7
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
0,
0,
0,
0,
0,
0,
0,
A[2:0]
1
1
1
1
1
1
=
=
=
=
=
=
=
A[6:3]
ODT
0
0
1
0
0
1
BA[2:0]
BA[2:0]
BA[2:0]
BA[2:0]
BA[2:0]
BA[2:0]
BA[2:0]
A[9:7]
0
0
1
0
0
1
but
but
but
but
but
but
but
WE
CAS
RAS
CS
0
1
1
0
1
1
0
1
1
0
1
1
Sub-Loop
Sub-Loop
Sub-Loop
Sub-Loop
Sub-Loop
Sub-Loop
Sub-Loop
A[10]
1
2
3
4
5
6
7
WR
D
D,D
WR
D
D,D
repeat
repeat
repeat
repeat
repeat
repeat
repeat
A[15:11]
0
1
2,3
4
5
6,7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
BA[2:0]
0
Command
Cycle
Number
Sub-Loop
CKE
Static High
toggling
CK, CK
Table 8 - IDD4W Measurement-Loop Patterna)
Datab)
0
0
0
0
0
0
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
0
0
0
0
0
0
00000000
00110011
-
1
2
3
4
5
6
7
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 0.2 / Feb. 2010
46
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
0
REF
0
0
0
1
0
0
0
0
0
0
0
-
1
1.2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 9 - IDD5B Measurement-Loop Patterna)
Static High
toggling
3,4
2
5...8
repeat cycles 1...4, but BA[2:0] = 1
9...12
repeat cycles 1...4, but BA[2:0] = 2
13...16
repeat cycles 1...4, but BA[2:0] = 3
17...20
repeat cycles 1...4, but BA[2:0] = 4
21...24
repeat cycles 1...4, but BA[2:0] = 5
25...28
repeat cycles 1...4, but BA[2:0] = 6
29...32
repeat cycles 1...4, but BA[2:0] = 7
33...nRFC-1
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 0.2 / Feb. 2010
47
Table 10 - IDD7 Measurement-Loop Patterna)
2
3
4
Static High
5
6
7
8
9
10
4*nRRD
nFAW
nFAW+nRRD
nFAW+2*nRRD
nFAW+3*nRRD
nFAW+4*nRRD
2*nFAW+0
2*nFAW+1
2&nFAW+2
11
2*nFAW+nRRD
2*nFAW+nRRD+1
2&nFAW+nRRD+2
12
13
2*nFAW+2*nRRD
2*nFAW+3*nRRD
14
2*nFAW+4*nRRD
15
16
17
18
3*nFAW
3*nFAW+nRRD
3*nFAW+2*nRRD
3*nFAW+3*nRRD
19
3*nFAW+4*nRRD
00110011
-
0
-
0
-
0
0
0
00110011
-
0
0
0
00000000
-
0
-
0
-
A[10]
0
0
0
ODT
00000000
-
WE
0
0
0
CAS
ACT
0
0
1
1
0
0
00
0
0
0
RDA
0
1
0
1
0
0
00
1
0
0
D
1
0
0
0
0
0
00
0
0
0
repeat above D Command until nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
F
RDA
0
1
0
1
0
1
00
1
0
F
D
1
0
0
0
0
1
00
0
0
F
repeat above D Command until 2* nRRD - 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 1, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
F
Assert and repeat above D Command until nFAW - 1, if necessary
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 1, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 1, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
F
Assert and repeat above D Command until 2* nFAW - 1, if necessary
ACT
0
0
1
1
0
0
00
0
0
F
RDA
0
1
0
1
0
0
00
1
0
F
D
1
0
0
0
0
0
00
0
0
F
Repeat above D Command until 2* nFAW + nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
0
RDA
0
1
0
1
0
1
00
1
0
0
D
1
0
0
0
0
1
00
0
0
0
Repeat above D Command until 2* nFAW + 2* nRRD - 1
repeat Sub-Loop 10, but BA[2:0] = 2
repeat Sub-Loop 11, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
0
Assert and repeat above D Command until 3* nFAW - 1, if necessary
repeat Sub-Loop 10, but BA[2:0] = 4
repeat Sub-Loop 11, but BA[2:0] = 5
repeat Sub-Loop 10, but BA[2:0] = 6
repeat Sub-Loop 11, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
0
Assert and repeat above D Command until 4* nFAW - 1, if necessary
RAS
Datab)
CS
A[9:7]
A[15:11]
BA[2:0]
Command
A[2:0]
1
0
1
2
...
nRRD
nRRD+1
nRRD+2
...
2*nRRD
3*nRRD
A[6:3]
0
toggling
Cycle
Number
Sub-Loop
CKE
CK, CK
ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 0.2 / Feb. 2010
48
IDD Specifications (Tcase: 0 to 95oC)
* Module IDD values in the datasheet are only a calculation based on the component IDD spec.
The actual measurements may vary according to DQ loading cap.
1GB, 128M x 64 SO-DIMM: HMT312S6BFR6C
Symbol
IDD0
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
IDD6TC
IDD7
DDR3 1066
240
280
100
140
48
60
100
120
60
420
420
600
48
60
60
520
DDR3 1333
260
300
120
160
48
60
120
120
60
520
520
620
48
60
60
680
DDR3 1600
260
300
120
180
48
60
120
160
60
560
600
640
48
60
60
720
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
note
2GB, 256M x 64 SO-DIMM: HMT325S6BFR6C
Symbol
IDD0
IDD1
IDD2N
DDR3 1066
340
380
200
DDR3 1333
380
420
240
DDR3 1600
380
420
240
Unit
mA
mA
mA
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
IDD6TC
IDD7
280
96
120
200
240
120
520
520
700
96
120
120
620
320
96
120
240
240
120
640
640
740
96
120
120
800
360
96
120
240
320
120
680
720
760
96
120
120
840
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Rev. 0.2 / Feb. 2010
49
2GB, 256M x 64 SO-DIMM: HMT325S6BFR8C
Symbol
IDD0
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
DDR3 1066
360
440
200
256
96
120
DDR3 1333
400
480
240
280
96
120
DDR3 1600
440
520
240
320
96
120
Unit
mA
mA
mA
mA
mA
mA
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
IDD6TC
IDD7
200
240
120
640
640
1200
96
120
120
880
240
280
120
760
760
1240
96
120
120
1080
240
320
120
840
880
1280
96
120
120
1160
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR3 1600
760
840
480
640
192
240
480
640
240
1160
1200
1600
192
240
240
1480
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
note
4GB, 512M x 64 SO-DIMM: HMT351S6BFR8C
Symbol
IDD0
IDD1
IDD2N
IDD2NT
IDD2P0
IDD2P1
IDD2Q
IDD3N
IDD3P
IDD4R
IDD4W
IDD5B
IDD6
IDD6ET
IDD6TC
IDD7
Rev. 0.2 / Feb. 2010
DDR3 1066
560
640
400
512
192
240
400
480
240
840
840
1400
192
240
240
1081
DDR3 1333
640
720
480
560
192
240
480
560
240
1000
1000
1480
192
240
240
1320
note
50
Module Dimensions
128Mx64 - HMT312S6BFR6C
Front
Side
67.60mm
3.80mm max
2.0
30.0mm
4.00 ±0.10
Detail-A
pin 1
2.15
2 X φ 1.80 ± 0.10
pin 203
21.00
20.0mm
6.00
SPD
1.00 ± 0.08 mm
39.00
1.65 ± 0.10
3.00
Back
0.45 ± 0.03
2.55
0.3 ± 0.15
4.00 ± 0.10
Detail of Contacts A
0.3~1.0
0.60
1.00 ± 0.05
Note:
1. ± 0.13 tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.2 / Feb. 2010
51
256Mx64 - HMT325S6BFR6C
Front
Side
67.60mm
3.80mm max
2.0
30.0mm
4.00 ±0.10
Detail-A
pin 1
2.15
2 X φ 1.80 ± 0.10
pin 203
21.00
20.0mm
6.00
SPD
1.00 ± 0.08 mm
39.00
1.65 ± 0.10
3.00
Back
0.45 ± 0.03
2.55
0.3 ± 0.15
4.00 ± 0.10
Detail of Contacts A
0.3~1.0
0.60
1.00 ± 0.05
Note:
1. ± 0.13 tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.2 / Feb. 2010
52
256Mx64 - HMT325S6BFR8C
Front
Side
67.60mm
3.80mm max
2.0
30.0mm
4.00 ±0.10
Detail-A
pin 1
2.15
2 X φ 1.80 ± 0.10
pin 203
21.00
20.0mm
6.00
SPD
1.00 ± 0.08 mm
39.00
1.65 ± 0.10
3.00
Back
0.45 ± 0.03
2.55
0.3 ± 0.15
4.00 ± 0.10
Detail of Contacts A
0.3~1.0
0.60
1.00 ± 0.05
Note:
1. ± 0.13 tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.2 / Feb. 2010
53
512Mx64 - HMT351S6BFR8C
Front
Side
67.60mm
3.80mm max
2.0
Detail-B
pin 1
pin 203
21.00
1.65 ± 0.10
2.15
2 X φ 1.80 ± 0.10
20.0mm
Detail- A
6.00
30.0mm
4.00 ± 0.10
1.00 ± 0.08 mm
39.00
3.00
Back
SPD
0.45 ± 0.03
2.55
0.3 ± 0.15
4.00 ± 0.10
Detail of Contacts A
0.3~1.0
0.60
1.00 ± 0.05
Note:
1. ± 0.13 tolerance on all dimensions unless otherwise stated.
Units: millimeters
Rev. 0.2 / Feb. 2010
54