LRC LMBZ10VALT1G 24 and 40 watt peak power zener transient voltage suppressor Datasheet

LESHAN RADIO COMPANY, LTD.
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
LMBZ6V8ALT1G
Series
3
SOT–23 Dual Common Anode Zeners
for ESD Protection
1
2
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
SOT–23
1.CATHODE
3.ANODE
2.CATHODE
Specification Features:
• SOT–23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
MARKING
DIAGRAM
xxx
xxx
M
M
•
•
•
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range – 3 V to 26 V
Standard Zener Breakdown Voltage Range – 5.6 V to 33 V
Peak Power – 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5. Waveform
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 µA
Flammability Rating UL 94V–O
We declare that the material of product
compliance with RoHS requirements.
= Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
LMBZ5V6ALT1G/T3G SOT–23
3000/10000Tape & Reel
LMBZ6V2ALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ6V8ALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ9V1ALT1G/T3G SOT–23
3000/10000Tape & Reel
LMBZ10VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ12VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ15VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ18VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ20VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ27VALT1G/T3G
SOT–23
3000/10000Tape & Reel
LMBZ33VALT1G/T3G
SOT–23
3000/10000Tape & Reel
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
LMBZ6V8ALT1G–1/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1.) LMBZ5V6ALT1G thru LMBZ10VALT1G
@ TL ≤ 25°C
LMBZ12VALT1G thru LMBZ33VALT1G
Ppk
24
40
Watts
Total Power Dissipation on FR–5 Board (Note 2.) @ TA = 25°C
Derate above 25°C
°PD°
225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3.) @ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance Junction to Ambient
RθJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
TL
260
°C
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
1. Non–repetitive current pulse per Figure 5. and derate above TA = 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VBR
IF
Working Peak Reverse Voltage
VC VBR VRWM
IR VF
IT
V
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
IPP
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
Uni–Directional TVS
LMBZ6V8ALT1G–2/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
24 WATTS
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
VRWM
Device
Device
Marking
IR @
VRWM
Volts
A
Min
Nom
Max
LMBZ5V6ALT1G
5A6
3.0
5.0
5.32
5.6
LMBZ6V2ALT1G
6A2
3.0
0.5
5.89
6.2
Max Zener
Impedance (Note 5.)
VC @ IPP
(Note 6.)
@ IT
ZZT @ IZT
ZZK @ IZK
VC
IPP
VBR
mA
Ω
Ω
mA
V
A
mV/C
5.88
20
11
1600
0.25
8.0
3.0
1.26
6.51
1.0
–
–
–
8.7
2.76
2.80
VBR (Note 4.) (V)
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
VBR (Note 4.) (V)
VC @ IPP (Note 6.)
@ IT
VC
IPP
VBR
VRWM
IR @ VRWM
Device
Device
Marking
Volts
A
Min
Nom
Max
mA
V
A
mV/C
LMBZ6V8ALT1G
6A8
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
3.4
LMBZ9V1ALT1G
9A1
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
7.5
LMBZ10VALT1G
10A
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
7.5
40 WATTS
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
VRWM
IR @ VRWM
Device
Device
Marking
Volts
nA
LMBZ12VALT1G
12A
8.5
LMBZ15VALT1G
15A
12
LMBZ18VALT1G
18A
LMBZ20VALT1G
20A
LMBZ27VALT1G
LMBZ33VALT1G
VBR (Note 4.) (V)
VC @ IPP (Note 6.)
@ IT
VC
IPP
VBR
mV/C
Min
Nom
Max
mA
V
A
200
11.40
12
12.60
1.0
17
2.35
7.5
50
14.25
15
15.75
1.0
21
1.9
12.3
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
17
50
19.00
20
21.00
1.0
28
1.4
17.2
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5. and derate per Figure 6.
LMBZ6V8ALT1G–3/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
TYPICAL CHARACTERISTICS
1000
15
100
12
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ I T )
18
9
10
1
6
0.1
3
0
-40
0
+50
TEMPERATURE (°C)
+100
+150
0.01
-40
Figure 1. Typical Breakdown Voltage
versus Temperature
+25
+85
TEMPERATURE (°C)
+125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
300
PD , POWER DISSIPATION (mW)
C, CAPACITANCE (pF)
280
240
200
5.6 V
160
120
15 V
80
40
0
0
1
2
3
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
250
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 4. Steady State Power Derating Curve
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
LMBZ6V8ALT1G–4/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
tr ≤ 10 s
PEAK VALUE-IPP
VALUE (%)
100
HALF VALUE-
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
IPP
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 5. Pulse Waveform
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
LMBZ5V6ALT1
LMBZ5V6ALT1
100
Ppk PEAK SURGE POWER (W)
Ppk PEAK SURGE POWER (W)
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
1
UNIDIRECTIONAL
0.1
200
Figure 6. Pulse Derating Curve
100
10
175
1
10
100
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non–repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
1000
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
UNIDIRECTIONAL
1
10
100
1000
PW, PULSE WIDTH (ms)
Figure 8. Maximum Non–repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
LMBZ6V8ALT1G –5/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT–23
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
LMBZ5V6ALT1G
THRU
LMBZ33VALT1G
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
CLOCK
LMBZ5V6ALT1G
THRU
LMBZ33VALT1G
CONTROL BUS
GND
LMBZ5V6ALT1G
THRU
LMBZ33VALT1G
LMBZ6V8ALT1G–6/7
LESHAN RADIO COMPANY, LTD.
LMBZ6V8ALT1G Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
LMBZ6V8ALT1G-7/7
LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
A
50mm Min
20.2mm Min
(.795’’)
(1.969’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
G
8 mm
330mm
(12.992’’)
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
T Max
14.4mm
(.56’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
LESHAN RADIO COMPANY, LTD.
Shipment Specification
CPN
LABEL
LABEL
LABEL
Dim(Unit:mm)
195mm*195mm*150mm
10 Reel
3000PCS/Reel
8000PCS/Reel (SOT-723,SOD-723)
10Reel/Inner Box
30KPCS/Inner Box
80KPCS/Inner Box (SOT-723,SOD-723)
Dim(Unit:mm)
LABEL
460mm*400mm*420mm
MARK
乐山无线电股份有限公司
Leshan Radio Company,Ltd.
12 Inner Box/Carton
360KPCS/Carton
960KPCS/Carton (SOT-723,SOD-723)
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