IPD350N06L G OptiMOS® Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logicl level V DS 60 V R DS(on),max 35 mΩ ID 29 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPD350N06L G Package PG-TO252-3 Marking 350N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 29 T C=100 °C 20 Unit A Pulsed drain current I D,pulse T C=25 °C1) 116 Avalanche energy, single pulse E AS I D=29 A, R GS=25 Ω 80 mJ Reverse diode dv /dt dv /dt I D=29 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 68 W -55 ... 175 °C 55/175/56 See figure 3 Rev. 1.3 page 1 2008-09-01 IPD350N06L G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.2 minimal footprint - - 75 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=28 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=29 A - 27 35 mΩ V GS=4.5 V, I D=19 A - 36 47 - 1.4 - Ω 16 32 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=29 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.3 page 2 2008-09-01 IPD350N06L G Parameter Values Symbol Conditions Unit min. typ. max. - 600 800 - 150 200 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 40 60 Turn-on delay time t d(on) - 6 9 Rise time tr - 21 32 Turn-off delay time t d(off) - 29 44 Fall time tf - 20 30 Gate to source charge Q gs - 2 3 Gate charge at threshold Q g(th) - 1 1.3 Gate to drain charge Q gd - 6 9 Switching charge Q sw - 8 11 Gate charge total Qg - 10 13 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 6 7 - - 29 - - 116 - 0.98 1.3 V - 40 50 ns - 36 45 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=29 A, R G=11 Ω pF ns Gate Charge Characteristics3) V DD=30 V, I D=29 A, V GS=0 to 5 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 3) T C=25 °C V GS=0 V, I F=29 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.3 page 3 2008-09-01 IPD350N06L G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 30 70 25 60 20 I D [A] P tot [W] 50 40 15 30 10 20 5 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 101 limited by on-state resistance 1 µs 2 10 0.5 10 µs 100 101 1 ms DC 0.2 Z thJC [K/W] I D [A] 100 µs 10 ms 0.1 0.05 10-1 0.02 0 10 0.01 single pulse 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-09-01 IPD350N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 60 10 V 5.5 V 4V 3.5 V 3V 5V 50 60 I D [A] 40 R DS(on) [mΩ] 4.5 V 30 4V 4.5 V 40 5V 5.5 V 10 V 20 20 3.5 V 10 3V 0 0 0 1 2 0 3 10 20 V DS [V] 30 40 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 50 50 40 40 g fs [S] I D [A] 30 30 20 20 10 10 175 °C 25 °C 0 0 0 1 2 3 4 5 V GS [V] Rev. 1.3 0 10 20 30 40 50 60 I D [A] page 5 2008-09-01 IPD350N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=29 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 100 2.5 80 2 60 V GS(th) [V] R DS(on) [mΩ] 280 µA 98 % 40 1.5 28 µA 1 typ 20 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 175 °C 98% 25 °C 103 I F [A] C [pF] Ciss 175 °C 101 25 °C 98% Coss 102 100 Crss 101 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.3 0 1 2 3 V SD [V] page 6 2008-09-01 IPD350N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=29 A pulsed parameter: T j(start) parameter: V DD 102 12 30 V 10 12V 25 °C 48 V 8 V GS [V] I AV [A] 100 °C 101 150 °C 6 4 2 100 0 100 101 102 103 0 5 t AV [µs] 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.3 page 7 2008-09-01 IPD350N06L G PG-TO252-3: Outline Rev. 1.3 page 8 2008-09-01 IPD350N06L G Rev. 1.3 page 9 2008-09-01