MX29F002/002N T/B
2M-BIT [256K x 8] CMOS FLASH MEMORY
FEATURES
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•
•
•
•
•
•
•
262,144x 8 only
Fast access time: 55/70/90/120ns
Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
Programming and erasing voltage 5V ± 10%
Command register architecture
- Byte Programming (7us typical)
- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte
x1, and 64K-Byte x 3)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors or the
whole chip with Erase Suspend capability.
- Automatically programs and verifies data at specified
address
Erase Suspend/Erase Resume
- Suspends an erase operation to read data from, or
program data to, a sector that is not being erased, then
resumes the erase operation.
Status Reply
•
•
•
•
•
•
•
•
- Data polling & Toggle bit for detection of program and
erase cycle completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Sector protect/unprotect for 5V only system or 5V/12V
system
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1 to VCC+1V
Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Hardware RESET pin(only for 29F002T/B)
- Resets internal state machine to read mode
Low VCC write inhibit is equal to or less than 3.2V
Package type:
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
20 years data retention
GENERAL DESCRIPTION
MXIC's Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields for
erase and programming operations produces reliable
cycling. The MX29F002T/B uses a 5.0V ± 10% VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The MX29F002T/B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits only. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29F002T/B is
packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I). It is
designed to be reprogrammed and erased in-system or instandard EPROM programmers.
The standard MX29F002T/B offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F002T/B has separate chip enable (CE) and output
enable (OE) controls.
The highest degree of latch-up protection is achieved with
MXIC's proprietary non-epi process. Latch-up protection is
proved for stresses up to 100 milliamps on address and
data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F002T/B uses a command register to manage this
functionality. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
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MX29F002/002N T/B
PIN CONFIGURATIONS
32 TSOP (TYPE 1)
32 PDIP
NC on MX29F002NT/B
RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
MX29F002T/B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
A14
A17
WE
VCC
(NC on MX29F002NT/B) RESET
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
MX29F002T/B
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
A3
(NORMAL TYPE)
32 PLCC
SECTOR STRUCTURE
A17~A0
3FFFFH
A7
32
A17
1
WE
VCC
A16
4
RESET
5
A15
A12
NC on MX29F002NT/B
30
29
3BFFFH
A14
A6
A13
A5
A8
A4
A3
MX29F002T/B
9
25
A9
A11
2FFFFH
OE
A1
A10
A0
CE
Q5
Q4
Q3
VSS
K-BYTE
8
K-BYTE
32
K-BYTE
64
K-BYTE
64
K-BYTE
64
K-BYTE
1FFFFH
0FFFFH
Q7
00000H
Q6
21
20
17
Q2
Q1
13
14
8
39FFFH
37FFFH
A2
Q0
16 K-BYTE
(BOOT SECTOR)
MX29F002T Sector Architecture
A17~A0
PIN DESCRIPTION
3FFFFH
SYMBOL
PIN NAME
2FFFFH
A0~A17
Address Input
1FFFFH
Q0~Q7
Data Input/Output
CE
Chip Enable Input
0FFFFH
64
K-BYTE
64
K-BYTE
64
K-BYTE
32
K-BYTE
8
K-BYTE
8
K-BYTE
07FFFH
WE
Write Enable Input
RESET
Hardware Reset Pin/Sector Protect Unlock
OE
Output Enable Input
03FFFH
VCC
Power Supply Pin (+5V)
00000H
GND
Ground Pin
05FFFH
16 K-BYTE
(BOOT SECTOR)
MX29F002B Sector Architecture
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MX29F002/002N T/B
BLOCK DIAGRAM
WRITE
WE
OE
WP
RESET
CONTROL
LOGIC
STATE
HIGH VOLTAGE
MACHINE
(WSM)
LATCH
BUFFER
STATE
REGISTER
MX29F002
FLASH
ARRAY
ARRAY
Y-DECODER
AND
X-DECODER
ADDRESS
A0~A17
PROGRAM/ERASE
INPUT
Y-PASS GATE
SOURCE
HV
COMMAND
DATA
DECODER
SENSE
AMPLIFIER
PGM
DATA
HV
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q7
I/O BUFFER
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MX29F002/002N T/B
AUTOMATIC PROGRAMMING
cally pre-program and verify the entire array. Then the
device automatically times the erase pulse width, verifies
the erase, and counts the number of sequences. A status
bit similar to DATA polling and status bit toggling between
consecutive read cycles provides feedback to the user as
to the status of the programming operation.
The MX29F002T/B is byte programmable using the
Automatic Programming algorithm. The Automatic
Programming algorithm does not require the system to
time out or verify the data programmed. The typical chip
programming time of the MX29F002T/B at room temperature
is less than 3.5 seconds.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as inputs to an internal state-machine which controls
the erase and programming circuitry. During write cycles,
the command register internally latches address and data
needed for the programming and erase operations. During
a system write cycle, addresses are latched on the falling
edge, and data are latched on the rising edge of WE .
AUTOMATIC CHIP ERASE
Typical erasure at room temperature is accomplished in
less than 3 seconds. The device is erased using the
Automatic Erase algorithm. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
internally controlled by the device.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29F002T/B electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
AUTOMATIC SECTOR ERASE
The MX29F002T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically programs
the specified sector(s) prior to electrical erase. The timing
and verification of electrical erase are internally controlled
by the device.
During a program cycle, the state-machine will control the
program sequences and command register will not respond to any command set. During a Sector Erase cycle,
the command register will only respond to Erase Suspend
command. After Erase Suspend is completed, the device
stays in read mode. After the state machine has completed its task, it will allow the command register to
respond to its full command set.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write a program set-up commands include 2
unlock write cycle and A0H and a program command
(program data and address). The device automatically
times the programming pulse width, verifies the program,
and counts the number of sequences. A status bit similar
to DATA polling and a status bit toggling between
consecutive read cycles, provides feedback to the user as
to the status of the programming operation.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard
microprocessor write timings. The device will automati-
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MX29F002/002N T/B
TABLE 1. SOFTWARE COMMAND DEFINITIONS
Bus
First Bus
Cycle
Cycle
Addr Data
Reset
1
XXXH F0H
Read
1
Read Silicon ID
4
Sector Protect
4
Command
Third Bus
Cycle
Fourth Bus
Cycle
Addr Data
Addr Data
Addr Data
555H AAH
2AAH 55H
555H 90H
ADI
DDI
555H AAH
2AAH 55H
555H 90H
(SA)
00H
RA
Second Bus
Cycle
Fifth Bus
Cycle
Addr Data
Sixth Bus
Cycle
Addr Data
RD
Verification
(X02H) 01H
Program
4
555H AAH
2AAH 55H
555H A0H
PA
PD
Chip Erase
6
555H AAH
2AAH 55H
555H 80H
555H AAH
2AAH
55H 555H 10H
Sector Erase
6
555H AAH
2AAH 55H
555H 80H
555H AAH
2AAH
55H SA
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
Unlock for sector
6
555H AAH
2AAH 55H
555H 80H
555H AAH
2AAH 55H
30H
555H 20H
protect/unprotect
Note:
1. ADI = Address of Device identifier; A1=0,A0 =0 for manufacture code,A1=0, A0 =1 for device code (Refer to Table 3).
DDI = Data of Device identifier : C2H for manufacture code, 00B0h/0034h for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3.The system should generate the following address patterns: 555H or 2AAH to Address A0~A10. Address bit A11~A17=X=Don't
care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated
with A11~A17 in either state.
4.For Sector Protect Verification Operation : If read out data is 01H, it means the sector has been protected. If read out data is 00H,
it means the sector is still not being protected.
COMMAND DEFINITIONS
Note that the Erase Suspend (B0H) and Erase Resume
(30H) commands are valid only while the Sector Erase
operation is in progress. Either of the two reset command
sequences will reset the device(when applicable).
Device operations are selected by writing specific address
and data sequences into the command register. Writing
incorrect address and data values or writing them in the
improper sequence will reset the device to the read mode.
Table 1 defines the valid register command sequences.
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MX29F002/002N T/B
TABLE 2. MX29F002T/B BUS OPERATION
Pins
CE
OE
WE
A0
A1
A6
A9
Q0~Q7
L
L
H
L
L
X
VID(2)
C2H
L
L
H
H
L
X
VID(2)
B0h/34h
Read
L
L
H
A0
A1
A6
A9
DOUT
Standby
H
X
X
X
X
X
X
HIGH Z
Output Disable
L
H
H
X
X
X
X
HIGH Z
Write
L
H
L
A0
A1
A6
A9
DIN(3)
Sector Protect with 12V
L
VID(2)
L
X
X
L
VID(2)
X
L
VID(2)
L
X
X
H
VID(2)
X
L
L
H
X
H
X
VID(2)
Code(5)
L
H
L
X
X
L
H
X
L
H
L
X
X
H
H
X
L
L
H
X
H
X
H
Code(5)
X
X
X
X
X
X
X
HIGH Z
Mode
Read Silicon ID
Manufacturer Code(1)
Read Silicon ID
Device Code(1)
system(6)
Chip Unprotect with 12V
system(6)
Verify Sector Protect
with 12V system
Sector Protect without 12V
system (6)
Chip Unprotect without 12V
system (6)
Verify Sector Protect/Unprotect
without 12V system (7)
Reset
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 1 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H means unprotected.
Code=01H means protected.
A17~A13=Sector address for sector protect.
6. Refer to sector protect/unprotect algorithm and waveform.
Must issue "unlock for sector protect/unprotect" command before "sector protect/unprotect without 12V system" command.
7. The "verify sector protect/unprotect without 12V system" is only following "Sector protect/unprotect without 12V system" command.
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MX29F002/002N T/B
READ/RESET COMMAND
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
The read or reset operation is initiated by writing the read/
reset command sequence into the command register.
Microprocessor read cycles retrieve array data. The
device remains enabled for reads until the command
register contents are altered.
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command
must then be written to place the device in the desired
state.
The Automatic Chip Erase does not require the device to
be entirely pre-programmed prior to executing the Automatic
Chip Erase. Upon executing the Automatic Chip Erase,
the device will automatically program and verify the entire
memory for an all-zero data pattern. When the device is
automatically verified to contain an all-zero pattern, a selftimed chip erase and verify begin. The erase and verify
operations are completed when the data on Q7 is "1" at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
SILICON-ID-READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such,
manufacturer and device codes must be accessible while
the device resides in the target system. PROM programmers
typically access signature codes by raising A9 to a high
voltage. However, multiplexing high voltage onto address
lines is not generally desired system design practice.
When using the Automatic Chip Erase algorithm, note that
the erase automatically terminates when adequate erase
margin has been achieved for the memory array(no erase
verify command is required).
The MX29F002T/B contains a Silicon-ID-Read operation
to supplement traditional PROM programming methodology.
The operation is initiated by writing the read silicon ID
command sequence into the command register. Following
the command write, a read cycle with A1=VIL, A0=VIL
retrieves the manufacturer code of C2H. A read cycle with
A1=VIL, A0=VIH returns the device code of B0h for
MX29F002T, 34h for MX29F002B.
If the Erase operation was unsuccessful, the data on Q5
is "1" (see Table 4), indicating the erase operation exceed
internal timing limit.
The automatic erase begins on the rising edge of the last
WE pulse in the command sequence and terminates when
the data on Q7 is "1" and the data on Q6 stops toggling for
two consecutive read cycles, at which time the device
returns to the Read mode.
TABLE 3. EXPANDED SILICON ID CODE
Pins
Code
Manufacture code
Device code
for MX29F002T
Device code
for MX29F002B
Sector Protection
Verification
A0
A1
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Code(Hex)
VIL
VIH
VIL
VIL
1
1
1
0
0
1
0
1
0
0
0
0
1
0
0
0
C2H
B0h
VIH
VIL
0
0
1
1
0
1
0
0
34h
X
X
VIH
VIH
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
01H (Protected)
00H (Unprotected)
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MX29F002/002N T/B
SET-UP AUTOMATIC
COMMANDS
SECTOR
the Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. After
this command has been executed, the command register
will initiate erase suspend mode. The state machine will
return to read mode automatically after suspend is ready.
At this time, state machine only allows the command
register to respond to the Read Memory Array, Erase
Resume and Program commands. The system can
determine the status of the program operation using the Q7
or Q6 status bits, just as in the standard program operation.
After an erase-suspended program operation is complete,
the system can once again read array data within nonsuspended sectors.
ERASE
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the
Automatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically
program and verify the sector(s) memory for an all-zero
data pattern. The system does not require to provide any
control or timing during these operations.
When the sector(s) is automatically verified to contain an
all-zero pattern, a self-timed sector erase and verification
begin. The erase and verification operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time the
device returns to the Read mode. The system does not
required to provide any control or timing during these
operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array (no
erase verify command is required). Sector erase is a sixbus cycle operation. There are two "unlock" write cycles.
These are followed by writing the set-up command-80H.
Two more "unlock" write cycles are then followed by the
sector erase command-30H. The sector address is
latched on the falling edge of WE, while the command(data)
is latched on the rising edge of WE. Sector addresses
selected are loaded into internal register on the sixth falling
edge of WE. Each successive sector load cycle started
by the falling edge of WE must begin within 30us from the
rising edge of the preceding WE. Otherwise, the loading
period ends and internal auto sector erase cycle starts.
(Monitor Q3 to determine if the sector erase timer window
is still open, see section Q3, Sector Erase Timer.) Any
command other than Sector Erase (30H) or Erase Suspend
(BOH) during the time-out period resets the device to read
mode.
ERASE SUSPEND
This command is only valid while the state machine is
executing Automatic Sector Erase operation, and therefore
will only be responded during Automatic Sector Erase
operation. Writing the Erase Suspend command during
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MX29F002/002N T/B
TABLE 4. WRITE OPERATION STATUS
Status
Q7
Q6
Note1
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
In Progress
Erase Suspend Read
Q3
Q2
N/A
No Toggle
Note2
Q7
Toggle
0
Toggle
0
1
Toggle
1
No
0
N/A
Toggle
(Erase Suspended Sector)
Erase Suspended Mode
Q5
0
Toggle
Data
Data
Data
Data
Data
Q7
Toggle
0
N/A
N/A
Q7
Toggle
1
N/A
No Toggle
0
Toggle
1
1
Toggle
Q7
Toggle
1
N/A
N/A
(Non-Erase Suspended Sector)
Erase Suspend Program
Byte Program in Auto Program Algorithm
Exceeded
Auto Erase Algorithm
Time Limits Erase Suspend Program
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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MX29F002/002N T/B
fourth WE pulse of the four write pulse sequences for
automatic program.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all other
conditions. Another Erase Suspend command can be
written after the chip has resumed erasing.
While the Automatic Erase algorithm is in operation, Q7 will
read "0" until the erase operation is competed. Upon
completion of the erase operation, the data on Q7 will read
"1". The Data Polling feature is valid after the rising edge
of the sixth WE pulse of six write pulse sequences for
automatic chip/sector erase.
The Data Polling feature is active during Automatic Program/
Erase algorithm or sector erase time-out.(see section Q3
Sector Erase Timer)
SET-UP AUTOMATIC PROGRAM COMMANDS
To initiate Automatic Program mode, a three-cycle
command sequence is required. There are two "unlock"
write cycles. These are followed by writing the Automatic
Program command A0H.
Q6:Toggle BIT I
The MX29F002T/B features a "Toggle Bit" as a method to
indicate to the host system that the Auto Program/Erase
algorithms are either in progress or completed.
Once the Automatic Program command is initiated, the
next WE pulse causes a transition to an active programming
operation. Addresses are latched on the falling edge, and
data are internally latched on the rising edge of the WE
pulse. The rising edge of WE also begins the programming
operation. The system does not require to provide further
controls or timings. The device will automatically provide
an adequate internally generated program pulse and verify
margin.
During an Automatic Program or Erase algorithm operation,
successive read cycles to any address cause Q6 to toggle.
The system may use either OE or CE to control the read
cycles. When the operation is complete, Q6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, Q6 toggles and returns
to reading array data. If not all selected sectors are
protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that
are protected.
If the program operation was unsuccessful, the data on Q5
is "1", indicating the program operation exceed internal
timing limit. The automatic programming operation is
completed when the data read on Q6 stops toggling for two
consecutive read cycles and the data on Q7 and Q6 are
equivalent to data written to these two bits, at which time
the device returns to the Read mode(no program verify
command is required).
DATA POLLING-Q7
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended.
When the device is actively erasing (that is, the Automatic
Erase algorithm is in progress), Q6 toggling. When the
device enters the Erase Suspend mode, Q6 stops toggling.
However, the system must also use Q2 to determine which
sectors are erasing or erase-suspended. Alternatively, the
system can use Q7(see the subsection on Q7:Data Polling).
The MX29F002T/B also features Data Polling as a method
to indicate to the host system that the Automatic Program
or Erase algorithms are either in progress or completed.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program command
sequence is written, then returns to reading array data.
While the Automatic Programming algorithm is in operation,
an attempt to read the device will produce the complement
data of the data last written to Q7. Upon completion of the
Automatic Program Algorithm an attempt to read the
device will produce the true data last written to Q7. The
Data Polling feature is valid after the rising edge of the
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm
is complete.
WRITE OPERATION STATUS
The Write Operation Status table shows the outputs for
Toggle Bit I on Q6. Refer to the toggle bit algorithm.
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MX29F002/002N T/B
system must start at the beginning of the algorithm when
it returns to determine the status of the operation (top of the
toggle bit algorithm flow chart).
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively erasing (that is, the
Automatic Erase algorithm is in process), or whether that
sector is erase-suspended. Toggle Bit I is valid after the
rising edge of the final WE pulse in the command sequence.
Q5
Exceeded Timing Limits
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. Q6, by comparison,
indicates whether the device is actively erasing, or is in
Erase Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are required for
sectors and mode information. Refer to Table 4 to compare
outputs for Q2 and Q6.
Q5 will indicate if the program or erase time has exceeded
the specified limits(internal pulse count). Under these
conditions Q5 will produce a "1". This time-out condition
which indicates that the program or erase cycle was not
successfully completed. Data Polling and Toggle Bit are
the only operating functions of the device under this
condition.
If this time-out condition occurs during sector erase
operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still
functional and may be used for the program or erase
operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
Reading Toggle Bits Q6/ Q2
Refer to the toggle bit algorithm for the following discussion.
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit after
the first read. After the second read, the system would
compare the new value of the toggle bit with the first. If the
toggle bit is not toggling, the device has completed the
program or erase operation. The system can read array
data on Q7-Q0 on the following read cycle.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or
combination of sectors are bad.
If this time-out condition occurs during the byte programming
operation, it specifies that the entire sector containing that
byte is bad and this sector maynot be reused, (other
sectors are still functional and can be reused).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system
also should note whether the value of Q5 is high (see the
section on Q5). If it is, the system should then determine
again whether the toggle bit is toggling, since the toggle bit
may have stopped toggling just as Q5 went high. If the
toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still
toggling, the device did not complete the operation
successfully, and the system must write the reset command
to return to reading array data.
The Q5 time-out condition may also appear if a user tries
to program a non blank location without erasing. In this
case the device locks out and never completes the
Automatic Algorithm operation. Hence, the system never
reads a valid data on Q7 bit and Q6 never stops toggling.
Once the Device has exceeded timing limits, the Q5 bit will
indicate a "1". Please note that this is not a device failure
condition since the device was incorrectly used.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high. The
system may continue to monitor the toggle bit and Q5
through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the
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MX29F002/002N T/B
Q3
Sector Erase Timer
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL, CE =
VIH or WE = VIH. To initiate a write cycle CE and WE must
be a logical zero while OE is a logical one.
After the completion of the initial sector erase command
sequence the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling and
Toggle Bit are valid after the initial sector erase command
sequence.
POWER SUPPLY DECOUPLING
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be used
to determine if the sector erase timer window is still open.
If Q3 is high ("1") the internally controlled erase cycle has
begun; attempts to write subsequent commands to the
device will be ignored until the erase operation is completed
as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"),
the device will accept additional sector erase commands.
To insure the command has been accepted, the system
software should check the status of Q3 prior to and
following each subsequent sector erase command. If Q3
were high on the second status check, the command may
not have been accepted.
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between
its VCC and GND.
SECTOR PROTECTION WITH 12V SYSTEM
The MX29F002T/B features hardware sector protection.
This feature will disable both program and erase operations
for these sectors protected. To activate this mode, the
programming equipment must force VID on address pin A9
and control pin OE, (suggest VID = 12V) A6 = VIL and CE
= VIL.(see Table 2) Programming of the protection
circuitry begins on the falling edge of the WE pulse and is
terminated on the rising edge. Please refer to sector
protect algorithm and waveform.
DATA PROTECTION
The MX29F002T/B is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transition.
During power up the device automatically resets the state
machine in the Read mode. In addition, with its control
register architecture, alteration of the memory contents
only occurs after successful completion of specific
command sequences. The device also incorporates
several features to prevent inadvertent write cycles resulting
from VCC power-up and power-down transition or system
noise.
To verify programming of the protection circuitry, the
programming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH. When A1=1, it will
produce a logical "1" code at device output Q0 for a
protected sector. Otherwise the device will produce 00H
for the unprotected sector. In this mode, the addresses,
except for A1, are in "don't care" state. Address locations
with A1 = VIL are reserved to read manufacturer and device
codes.(Read Silicon ID)
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce a
logical "1" at Q0 for the protected sector.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will not
initiate a write cycle.
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MX29F002/002N T/B
Temporary Sector Unprotect Operation (For 29F002T/B only)
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
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MX29F002/002N T/B
TEMPORARY SECTOR UNPROTECT
Parameter Std. Description
Test Setup All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
Temporary Sector Unprotect Timing Diagram (For 29F002T/B only)
12V
RESET
0 or 5V
0 or 5V
Program or Erase Command Sequence
tVIDR
tVIDR
CE
WE
tRSP
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MX29F002/002N T/B
AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options
tREADY
RESET PIN Low (Not During Automatic Algorithms)
Unit
MAX
500
ns
to Read or Write (See Note)
tRP1
RESET Pulse Width (During Automatic Algorithms)
MIN
10
us
tRP2
RESET Pulse Width (NOT During Automatic Algorithms) MIN
500
ns
tRH
RESET High Time Before Read(See Note)
0
ns
MIN
Note:
Not 100% tested
RESET TIMING WAVEFORM (For 29F002T/B only)
CE, OE
tRH
RESET
tRP2
tReady
Reset Timing NOT during Automatic Algorithms
RESET
tRP1
Reset Timing during Automatic Algorithms
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MX29F002/002N T/B
CHIP UNPROTECT WITH 12V SYSTEM
ABSOLUTE MAXIMUM RATINGS
The MX29F002T/B also features the chip unprotect mode,
so that all sectors are unprotected after chip unprotect is
completed to incorporate any changes in the code. It is
recommended to protect all sectors before activating chip
unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.(see
Table 2) Refer to chip unprotect algorithm and waveform
for the chip unprotect algorithm. The unprotection
mechanism begins on the falling edge of the WE pulse and
is terminated on the rising edge.
RATING
VALUE
Ambient Operating Temperature
0oC to 70oC
Storage Temperature
-65oC to 125oC
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to 7.0V
VCC to Ground Potential
-0.5V to 7.0V
A9
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for
extended period may affect reliability.
It is also possible to determine if the chip is unprotected in
the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector. It is
noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
NOTICE:
Specifications contained within the following tables are subject to
change.
SECTOR PROTECTION WITHOUT 12V SYSTEM
The MX29F002T/B also feature a hardware sector protection
method in a system without 12V power supply. The
programming equipment do not need to supply 12 volts to
protect sectors. The details are shown in sector protect
algorithm and waveform.
CHIP UNPROTECT WITHOUT 12V SYSTEM
The MX29F002T/B also feature a hardware chip unprotection
method in a system without 12V power supply. The
programming equipment do not need to supply 12 volts to
unprotect all sectors. The details are shown in chip
unprotect algorithm and waveform.
POWER-UP SEQUENCE
The MX29F002T/B powers up in the Read only mode. In
addition, the memory contents may only be altered after
successful completion of a two-step command sequence.
Vpp and Vcc power up sequence is not required.
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MX29F002/002N T/B
DC/AC Operating Conditions for Read/Programming/Erase Operation
Operating Temperature
Commercial
Industrial
Vcc Power Supply
-55
0oC to 70oC
5V±5%
MX29F002/002N
-70
-90
0oC to 70oC
0oC to 70oC
-40oC to 85oC -40oC to 85oC
5V±10%
5V±10%
-12
0oC to 70oC
-40oC to 85oC
5V±10%
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
PARAMETER
CIN1
CIN2
COUT
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Capacitance
8
pF
VIN = 0V
Control Pin Capacitance
12
pF
VIN = 0V
Output Capacitance
12
pF
VOUT = 0V
MAX.
UNIT
CONDITIONS
READ OPERATION
DC CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
TYP
ILI
Input Leakage Current
1(Note 3)
uA
VIN = GND to VCC
ILO
Output Leakage Current
10
uA
VOUT = GND to VCC
ISB1
Standby VCC current
1
mA
CE = VIH
5
uA
CE = VCC + 0.3V
ISB2
ICC1
1
Operating VCC current
ICC2
30(Note 4) mA
IOUT = 0mA, f=5MHz
50
IOUT = 0mA, f=10MHz
mA
VIL
Input Low Voltage
-0.3(NOTE 1)
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.3
V
VOL
Output Low Voltage
0.45
V
IOL = 2.1mA
VOH1
Output High Voltage(TTL)
2.4
V
IOH = -2mA
VOH2
Output High Voltage(CMOS)
VCC-0.4
V
IOH = -100uA,
VCC=VCC MIN
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns.
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. ILI=10uA for Industrial grade.
4. ICC1=45mA for Industrial grade.
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MX29F002/002N T/B
AC CHARACTERISTICS
29F002T/B-55
MIN.
SYMBOL
PARAMETER
MAX.
UNIT
CONDITION
tACC
Address to Output Delay
55
70
ns
CE=OE=VIL
tCE
CE to Output Delay
55
70
ns
OE=VIL
tOE
OE to Output Delay
25
30
ns
CE=VIL
tDF
OE High to Output Float (Note1)
0
tOH
Address to Output hold
0
MAX.
29F002T/B-70
MIN.
20
0
20
0
29F002T/B-90
MIN.
MAX.
ns
CE=VIL
ns
CE=OE=VIL
UNIT
CONDITIONS
29F002T/B-12
SYMBOL
PARAMETER
MIN.
tACC
Address to Output Delay
90
120
ns
CE=OE=VIL
tCE
CE to Output Delay
90
120
ns
OE=VIL
tOE
OE to Output Delay
40
50
ns
CE=VIL
tDF
OE High to Output Float (Note1)
0
30
ns
CE=VIL
tOH
Address to Output hold
0
ns
CE=OE=VIL
30
0
MAX.
0
TEST CONDITIONS:
NOTE:
• Input pulse levels: 0.45V/2.4V for 70ns max., 0V/3V for 55ns
• Input rise and fall times: < 10ns for 70ns max.
< 5ns for 55ns
• Output load:
1 TTL gate + 100pF (Including scope and jig) for 70ns max.
1 TTL gate + 50pF (Including scope and jig) for 55ns speed
grade
• Reference levels for measuring timing: 0.8V, 2.0V for 70ns
max.
: 1.5V for 55ns
1. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.
READ TIMING WAVEFORMS
VIH
ADD Valid
A0~17
VIL
tCE
VIH
CE
VIL
WE
VIH
OE
VIH
tACC
VIL
DATA
Q0~7
tDF
tOE
VIL
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
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MX29F002/002N T/B
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
DC CHARACTERISTICS
SYMBOL
PARAMETER
ICC1 (Read)
Operating VCC Current
MIN.
TYP
MAX.
UNIT
CONDITIONS
30(Note 5) mA
IOUT=0mA, f=5MHz
ICC2
50
mA
IOUT=0mA, F=10MHz
ICC3 (Program)
50
mA
In Programming
ICC4 (Erase)
50
mA
In Erase
mA
CE=VIH, Erase Suspended
ICCES
VCC Erase Suspend Current
2
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.
2. If VIH is over the specified maximum value, programming operation cannot be guaranteed.
3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is the sum of ICCES
and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
5. ICC1(Read)=45mA for Industrial Grade.
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MX29F002/002N T/B
AC CHARACTERISTICS
29F002T/B-55(NOTE 2)
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
tOES
OE setup time
0
ns
tCWC
Command programming cycle
70
ns
tCEP
WE programming pulse width
45
ns
tCEPH1
WE programming pulse width High
20
ns
tCEPH2
WE programming pulse width High
20
ns
tAS
Address setup time
0
ns
tAH
Address hold time
45
ns
tDS
Data setup time
20
ns
tDH
Data hold time
0
ns
tCESC
CE setup time before command write
0
ns
tDF
Output disable time (Note 1)
tAETC
Total erase time in auto chip erase
tAETB
tAVT
20
ns
3(TYP.)
24
s
Total erase time in auto sector erase
1(TYP.)
8
s
Total programming time in auto verify
7
210
us
(Byte Program time)
tBAL
Sector address load time
100
us
tCH
CE Hold Time
0
ns
tCS
CE setup to WE going low
0
ns
tVLHT
Voltage Transition Time
4
us
tOESP
OE Setup Time to WE Active
4
us
tWPP1
Write pulse width for sector protect
10
us
tWPP2
Write pulse width for sector unprotect
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. The test conditin of MX29F002T/B-55 : VCC=5V ± 5%,CL=50pf,VIH/VIL=3.0V/0V
VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=-2mA
TA= 0oC TO 70oC
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MX29F002/002N T/B
AC CHARACTERISTICS
29F002T/B-70 29F002T/B-90 29F002T/B-12
SYMBOL
PARAMETER
MIN.
tOES
OE setup time
0
MAX. MIN.
MAX. MIN.
0
MAX.
UNIT
0
ns
tCWC
Command programming cycle
70
90
120
ns
tCEP
WE programming pulse width
45
45
50
ns
tCEPH1
WE programming pulse width High
20
20
20
ns
tCEPH2
WE programming pulse width High
20
20
20
ns
tAS
Address setup time
0
0
0
ns
tAH
Address hold time
45
45
50
ns
tDS
Data setup time
30
45
50
ns
tDH
Data hold time
0
0
0
ns
tCESC
CE setup time before command write
0
tDF
Output disable time (Note 1)
tAETC
Total erase time in auto chip erase
3(TYP.) 24
3(TYP.)
24
tAETB
Total erase time in auto sector erase
1(TYP.) 8
1(TYP.)
tAVT
Total programming time in auto verify
7
7
0
30
210
0
40
ns
40
ns
3(TYP.)
24
s
8
1(TYP.)
8
s
210
7
210
us
(Byte Program time)
tBAL
Sector address load time
100
100
100
us
tCH
CE Hold Time
0
0
0
ns
tCS
CE setup to WE going low
0
0
0
ns
tVLHT
Voltage Transition Time
4
4
4
us
tOESP
OE Setup Time to WE Active
4
4
4
us
tWPP1
Write pulse width for sector protect
10
10
10
us
tWPP2
Write pulse width for sector unprotect
12
12
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
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MX29F002/002N T/B
SWITCHING TEST CIRCUITS
DEVICE UNDER
1.6K ohm
+5V
TEST
CL
1.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL=100pF Including jig capacitance
CL=50pF for MX29F002T/B-55
SWITCHING TEST WAVEFORMS(I) for speed grade 70ns max.
2.4V
2.0V
2.0V
TEST POINTS
0.8V
0.8V
0.45V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 2.4V for a logic "1" and 0.45V for a logic "0".
Input pulse rise and fall times are equal to or less than 20ns.
SWITCHING TEST WAVEFORMS(II) for speed grade 55ns(MX29F002T/B-55)
3.0V
1.5V
TEST POINTS
1.5V
0V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
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MX29F002/002N T/B
COMMAND WRITE TIMING WAVEFORM
VCC
5V
ADD
A0~17
VIH
WE
VIH
ADD Valid
VIL
tAH
tAS
VIL
tOES
tCEPH1
tCEP
tCWC
CE
VIH
VIL
tCS
OE
VIH
VIL
DATA
Q0-7
tCH
tDS
tDH
VIH
DIN
VIL
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MX29F002/002N T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
verified by DATA polling and toggle bit checking after
automatic verification starts. Device outputs DATA during
programming and DATA after programming on Q7.(Q6 is
for toggle bit; see toggle bit, DATA polling, timing waveform)
One byte data is programmed. Verify in fast algorithm and
additional programming by external control are not required
because these operations are executed automatically by
internal control circuit. Programming completion can be
AUTOMATIC PROGRAMMING TIMING WAVEFORM
Vcc 5V
A11~A17
A0~A10
ADD Valid
2AAH
555H
tAS
WE
ADD Valid
555H
tCWC
tAH
tCEPH1
tCESC
tAVT
CE
tCEP
OE
tDS
Q0~Q1,Q2
tDH
Command In
tDF
Command In
Command In
DATA
Data In
DATA polling
,Q4(Note 1)
Q7
Command In
Command #AAH
Command In
Command In
Command #55H
Command #A0H
(Q0~Q7)
DATA
Data In
DATA
tOE
Notes:
(1). Q6:Toggle bit, Q5:Tin=Timing-limit bit, Q3: Time-out bit
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MX29F002/002N T/B
AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Toggle Bit Checking
Q6 not Toggled
NO
YES
Invalid
Command
NO
Verify Byte Ok
YES
NO
.
Q5 = 1
Auto Program Completed
YES
Reset
Auto Program Exceed
Timing Limit
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MX29F002/002N T/B
TOGGLE BIT ALGORITHM
START
Read Q7~Q0
(Note 1)
Read Q7~Q0
NO
Toggle Bit Q6
=Toggle?
YES
NO
Q5=1?
YES
(Note 1,2)
Read Q7~Q0 Twice
Toggle Bit Q6
=Toggle?
YES
Program/Erase Operation Not
Complete, Write Reset Command
Program/Erase Operation Complete
Note:
1. Read toggle bit Q6 twice to determine whether or not it is toggle. See test.
2. Recheck toggle bit Q6 because it may stop toggling as Q5 changes to "1". See test.
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MX29F002/002N T/B
AUTOMATIC CHIPE RASETIMING WAVEFORM
starts. Device outputs 0 during erasure and 1 after erasure
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)
All data in chip are erased. External erase verify is not
required because data is erased automatically by internal
control circuit. Erasure completion can be verified by
DATA polling and toggle bit checking after automatic erase
AUTOMATIC CHIP ERASE TIMING WAVEFORM
Vcc 5V
A11~A17
A0~A10
2AAH
555H
555H
555H
tAS
WE
2AAH
555H
tCWC
tAH
tCEPH1
tAETC
CE
tCEP
OE
tDS tDH
Q0,Q1,
Command In
Command In
Command In
Command In
Command In
Command In
Q4(Note 1)
Q7
DATA polling
Command In
Command In
Command In
Command In
Command In
Command In
Command #AAH
Command #55H
Command #80H
Command #AAH
Command #55H
Command #10H
(Q0~Q7)
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
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MX29F002/002N T/B
AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Toggle Bit Checking
Q6 not Toggled
NO
YES
Invalid
Command
NO
DATA Polling
Q7 = 1
YES
NO
Q5 = 1
Auto Chip Erase Completed
.
YES
Reset
Auto Chip Erase Exceed
Timing Limit
REV. 1.5, MAR. 28, 2005
P/N: PM0547
28
MX29F002/002N T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
after automatic erase starts. Device outputs 0 during
erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see
toggle bit, DATA polling, timing waveform)
Sector data indicated by A13 to A17 are erased. External
erase verification is not required because data are erased
automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Vcc 5V
Sector
Address0
A13~A17
A0~A10
555H
2AAH
555H
555H
Sector
Address1
Sector
Addressn
2AAH
tAS
tCWC
tAH
WE
tCEPH1
tBAL
tAETB
CE
tCEP
OE
tDS tDH
Q0,Q1,
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Q4(Note 1)
Q7
DATA polling
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #AAH Command #55H Command #80H Command #AAH Command #55H Command #30H
(Q0~Q7)
Command
In
Command #30H
Command
In
Command #30H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
REV. 1.5, MAR. 28, 2005
P/N: PM0547
29
MX29F002/002N T/B
AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Toggle Bit Checking
Q6 Toggled ?
NO
Invalid Command
YES
Load Other Sector Addrss If Necessary
(Load Other Sector Address)
NO
Last Sector
to Erase
YES
Time-out Bit
Checking Q3=1 ?
NO
YES
Toggle Bit Checking
Q6 not Toggled
NO
YES
NO
Q5 = 1
DATA Polling
Q7 = 1
YES
Reset
Auto Sector Erase Completed
Auto Sector Erase Exceed
Timing Limit
REV. 1.5, MAR. 28, 2005
P/N: PM0547
30
MX29F002/002N T/B
ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
Toggle Bit checking Q6
not toggled
NO
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
Continue Erase
.
.
Another
Erase Suspend ?
NO
YES
REV. 1.5, MAR. 28, 2005
P/N: PM0547
31
MX29F002/002N T/B
TIMING WAVEFORM FOR SECTOR PROTECTION FOR SYSTEM WITH 12V
A1
A6
12V
5V
A9
tVLHT
Verify
12V
5V
OE
tVLHT
tVLHT
tWPP 1
WE
tOESP
CE
Data
01H
F0H
tOE
A17-A13
Sector Address
REV. 1.5, MAR. 28, 2005
P/N: PM0547
32
MX29F002/002N T/B
TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITH 12V
A1
12V
5V
A9
tVLHT
A6
Verify
12V
5V
OE
tVLHT
tVLHT
tWPP 2
WE
tOESP
CE
Data
00H
F0H
tOE
REV. 1.5, MAR. 28, 2005
P/N: PM0547
33
MX29F002/002N T/B
SECTOR PROTECTION ALGORITHM FOR SYSTEM WITH 12V
START
Set Up Sector Addr
(A17,A16,A15,A14,A13)
PLSCNT=1
OE=VID,A9=VID,CE=VIL
A6=VIL
Activate WE Pulse
Time Out 10us
Set WE=VIH, CE=OE=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
No
PLSCNT=32?
No
Data=01H?
.
Yes
Device Failed
Protect Another
Sector?
Yes
Remove VID from A9
Write Reset Command
Sector Protection
Complete
REV. 1.5, MAR. 28, 2005
P/N: PM0547
34
MX29F002/002N T/B
CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITH 12V
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 12ms
Increment
PLSCNT
Set OE=CE=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
Yes
No
No
PLSCNT=1000?
Yes
Device Failed
All sectors have
been verified?
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect the whole chip, all sectors should be protected in advance.
REV. 1.5, MAR. 28, 2005
P/N: PM0547
35
MX29F002/002N T/B
TIMING WAVEFORM FOR SECTOR PROTECTION FOR SYSTEM WITHOUT 12V
A1
A6
Toggle bit polling
Verify
5V
OE
tCEP
WE
* See the following Note!
CE
Data
Don't care
(Note 2)
01H
F0H
tOE
A17-A13
Sector Address
Note1: Must issue "unlock for sector protect/unprotect" command before sector protection
for a system without 12V provided.
Note2: Except F0H
REV. 1.5, MAR. 28, 2005
P/N: PM0547
36
MX29F002/002N T/B
TIMING WAVEFORM FOR CHIP UNPROTECTION FOR SYSTEM WITHOUT 12V
A1
A6
Toggle bit polling
Verify
5V
OE
tCEP
WE
* See the following Note!
CE
Data
Don't care
(Note 2)
00H
F0H
tOE
Note1: Must issue "unlock for sector protect/unprotect" command before sector unprotection
for a system without 12V provided.
Note2: Except F0H
REV. 1.5, MAR. 28, 2005
P/N: PM0547
37
MX29F002/002N T/B
SECTOR PROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V
START
PLSCNT=1
Write "unlock for sector protect/unprotect"
Command(Table1)
Set Up Sector Addr
(A17,A16,A15,A14,A13)
OE=VIH,A9=VIH
CE=VIL,A6=VIL
Activate WE Pulse to start
Data don't care
Toggle bit checking
Q6 not Toggled
No
Yes
Increment PLSCNT
Set CE=OE=VIL
A9=VIH
Read from Sector
Addr=SA, A1=1
No
No
PLSCNT=32?
Data=01H?
Yes
Yes
.
Device Failed
Protect Another
Sector?
Yes
No
Write Reset Command
Sector Protection
Complete
REV. 1.5, MAR. 28, 2005
P/N: PM0547
38
MX29F002/002N T/B
CHIP UNPROTECTION ALGORITHM FOR SYSTEM WITHOUT 12V
START
Protect All Sectors
PLSCNT=1
Write "unlock for sector protect/unprotect"
Command (Table 1)
Set OE=A9=VIH
CE=VIL,A6=1
Activate WE Pulse to start
Data don't care
No
Toggle bit checking
Q6 not Toggled
Increment
PLSCNT
Yes
Set OE=CE=VIL
A9=VIH,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
Yes
No
No
PLSCNT=1000?
Yes
Device Failed
All sectors have
been verified?
Yes
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect the whole chip, all sectors should be protected in advance.
REV. 1.5, MAR. 28, 2005
P/N: PM0547
39
MX29F002/002N T/B
ID CODE READ TIMING WAVEFORM MODE
VCC
5V
VID
ADD
VIH
VIL
A9
ADD
AD
tACC
tACC
A1
VIH
VIL
ADD
A2-A8
A10-A17
CE
VIH
VIL
VIH
VIL
WE
VIH
tCE
VIL
OE
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q7
DATA OUT
DATA OUT
VIL
B0h/34h
C2H
REV. 1.5, MAR. 28, 2005
P/N: PM0547
40
MX29F002/002N T/B
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
MX29F002TPC-55
Access Time
Operating Current
Standby Current
Temperature
(ns)
(mA)
MAX.(uA)
Range
55
30
5
0oC~70oC
o
o
PACKAGE
32 Pin PDIP
MX29F002TPC-70
70
30
5
0 C~70 C
32 Pin PDIP
MX29F002TPC-90
90
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002TPC-12
120
30
5
0 C~70 C
32 Pin PDIP
MX29F002TTC-55
55
30
5
0oC~70oC
32 Pin TSOP
MX29F002TTC-70
70
30
5
0oC~70oC
MX29F002TTC-90
90
30
5
0oC~70oC
MX29F002TTC-12
120
30
5
0oC~70oC
MX29F002TQC-55
55
30
5
0oC~70oC
(Normal Type)
32 Pin TSOP
(Normal Type)
32 Pin TSOP
(Normal Type)
32 Pin TSOP
(Normal Type)
o
o
32 Pin PLCC
MX29F002TQC-70
70
30
5
0 C~70 C
32 Pin PLCC
MX29F002TQC-90
90
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002TQC-12
120
30
5
0 C~70 C
32 Pin PLCC
MX29F002BPC-55
55
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002BPC-70
70
30
5
0 C~70 C
32 Pin PDIP
MX29F002BPC-90
90
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002BPC-12
120
30
5
0 C~70 C
32 Pin PDIP
MX29F002BTC-55
55
30
5
0oC~70oC
32 Pin TSOP
MX29F002BTC-70
70
30
5
0oC~70oC
MX29F002BTC-90
90
30
5
0oC~70oC
MX29F002BTC-12
120
30
5
0oC~70oC
MX29F002BQC-55
55
30
5
0oC~70oC
(Normal Type)
32 Pin TSOP
(Normal Type)
32 Pin TSOP
(Normal Type)
32 Pin TSOP
(Normal Type)
o
o
32 Pin PLCC
MX29F002BQC-70
70
30
5
0 C~70 C
32 Pin PLCC
MX29F002BQC-90
90
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002BQC-12
120
30
5
0 C~70 C
32 Pin PLCC
MX29F002NTPC-55
55
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002NTPC-70
70
30
5
0 C~70 C
32 Pin PDIP
MX29F002NTPC-90
90
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002NTPC-12
120
30
5
0 C~70 C
32 Pin PDIP
MX29F002NTTC-55
55
30
5
0oC~70oC
32 Pin TSOP
(Normal Type)
REV. 1.5, MAR. 28, 2005
P/N: PM0547
41
MX29F002/002N T/B
PART NO.
MX29F002NTTC-70
Access Time
Operating Current
Standby Current
Temperature
(ns)
(mA)
MAX.(uA)
Range
70
30
5
0oC~70oC
PACKAGE
32 Pin TSOP
(Normal Type)
MX29F002NTTC-90
90
30
5
o
o
o
o
o
o
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NTTC-12
120
30
5
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NTQC-55
55
30
5
0 C~70 C
32 Pin PLCC
MX29F002NTQC-70
70
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002NTQC-90
90
30
5
0 C~70 C
32 Pin PLCC
MX29F002NTQC-12
120
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002NBPC-55
55
30
5
0 C~70 C
32 Pin PDIP
MX29F002NBPC-70
70
30
5
0oC~70oC
32 Pin PDIP
o
o
MX29F002NBPC-90
90
30
5
0 C~70 C
32 Pin PDIP
MX29F002NBPC-12
120
30
5
0oC~70oC
32 Pin PDIP
MX29F002NBTC-55
55
30
5
o
o
o
o
o
o
o
o
o
o
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NBTC-70
70
30
5
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NBTC-90
90
30
5
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NBTC-12
120
30
5
0 C~70 C
32 Pin TSOP
(Normal Type)
MX29F002NBQC-55
55
30
5
0 C~70 C
32 Pin PLCC
MX29F002NBQC-70
70
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002NBQC-90
90
30
5
0 C~70 C
32 Pin PLCC
MX29F002NBQC-12
120
30
5
0oC~70oC
32 Pin PLCC
o
o
MX29F002TPI-70
70
45
5
-40 C~85 C
32 Pin PDIP
MX29F002TPI-90
90
45
5
-40oC~85oC
32 Pin PDIP
o
o
MX29F002TPI-12
120
45
5
-40 C~85 C
32 Pin PDIP
MX29F002TTI-70
70
45
5
-40oC~85oC
32 Pin TSOP
MX29F002TTI-90
90
45
5
-40oC~85oC
MX29F002TTI-12
120
45
5
-40oC~85oC
IMX29F002TQI-70
70
45
5
-40oC~85oC
(Normal Type)
32 Pin TSOP
(Normal Type)
32 Pin TSOP
(Normal Type)
o
o
32 Pin PLCC
MX29F002TQI-90
90
45
5
-40 C~85 C
32 Pin PLCC
MX29F002TQI-12
120
45
5
-40oC~85oC
32 Pin PLCC
o
o
IMX29F002BPI-70
70
45
5
-40 C~85 C
32 Pin PDIP
MX29F002BPI-90
90
45
5
-40oC~85oC
32 Pin PDIP
MX29F002BPI-12
120
45
5
o
o
-40 C~85 C
32 Pin PDIP
REV. 1.5, MAR. 28, 2005
P/N: PM0547
42
MX29F002/002N T/B
PART NO.
IMX29F002BTI-70
Access Time
Operating Current
Standby Current
Temperature
(ns)
(mA)
MAX.(uA)
Range
70
45
5
-40oC~85oC
PACKAGE
32 Pin TSOP
(Normal Type)
MX29F002BTI-90
90
45
5
o
o
o
o
o
o
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002BTI-12
120
45
5
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002BQI-70
70
45
5
-40 C~85 C
32 Pin PLCC
MX29F002BQI-90
90
45
5
-40oC~85oC
32 Pin PLCC
o
o
MX29F002BQI-12
120
45
5
-40 C~85 C
32 Pin PLCC
MX29F002NTPI-70
70
45
5
-40oC~85oC
32 Pin PDIP
o
o
MX29F002NTPI-90
90
45
5
-40 C~85 C
32 Pin PDIP
MX29F002NTPI-12
120
45
5
-40oC~85oC
32 Pin PDIP
MX29F002NTTI-70
70
45
5
o
o
o
o
o
o
o
o
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NTTI-90
90
45
5
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NTTI-12
120
45
5
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NTQI-70
70
45
5
-40 C~85 C
32 Pin PLCC
MX29F002NTQI-90
90
45
5
-40oC~85oC
32 Pin PLCC
o
o
MX29F002NTQI-12
120
45
5
-40 C~85 C
32 Pin PLCC
MX29F002NBPI-70
70
45
5
-40oC~85oC
32 Pin PDIP
o
o
MX29F002NBPI-90
90
45
5
-40 C~85 C
32 Pin PDIP
MX29F002NBPI-12
120
45
5
-40oC~85oC
32 Pin PDIP
MX29F002NBTI-70
70
45
5
o
o
o
o
o
o
o
o
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NBTI-90
90
45
5
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NBTI-12
120
45
5
-40 C~85 C
32 Pin TSOP
(Normal Type)
MX29F002NBQI-70
70
45
5
-40 C~85 C
32 Pin PLCC
MX29F002NBQI-90
90
45
5
-40oC~85oC
32 Pin PLCC
MX29F002NBQI-12
120
45
5
o
o
-40 C~85 C
32 Pin PLCC
REV. 1.5, MAR. 28, 2005
P/N: PM0547
43
MX29F002/002N T/B
PART NO.
MX29F002TTC-70G
Access Time
Operating Current
Standby Current
Temperature
(ns)
(mA)
MAX.(uA)
Range
70
30
5
0oC~70oC
PACKAGE
32 Pin TSOP
(Pb-free)
MX29F002TTC-90G
90
30
5
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002BTC-70G
70
30
5
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002BTC-90G
90
30
5
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002TQC-70G
70
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002TQC-90G
90
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002BQC-70G
70
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002BQC-90G
90
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002TPC-70G
70
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002TPC-90G
90
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002BPC-70G
70
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002BPC-90G
90
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002TPI-70G
70
45
5
o
o
o
o
o
o
o
o
-40 C~85 C
32 Pin PDIP
(Pb-free)
MX29F002TPI-90G
90
45
5
-40 C~85 C
32 Pin PDIP
(Pb-free)
MX29F002BPI-70G
70
45
5
-40 C~85 C
32 Pin PDIP
(Pb-free)
MX29F002BPI-90G
90
45
5
-40 C~85 C
32 Pin PDIP
(Pb-free)
REV. 1.5, MAR. 28, 2005
P/N: PM0547
44
MX29F002/002N T/B
PART NO.
Access Time
Operating Current
Standby Current
Temperature
(ns)
(mA)
MAX.(uA)
Range
70
30
5
0oC~70oC
MX29F002NTTC-70G
PACKAGE
32 Pin TSOP
(Pb-free)
MX29F002NTTC-90G
90
30
5
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
o
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002NBTC-70G
70
30
5
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002NBTC-90G
90
30
5
0 C~70 C
32 Pin TSOP
(Pb-free)
MX29F002NTQC-70G
70
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002NTQC-90G
90
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002NBQC-70G
70
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002NBQC-90G
90
30
5
0 C~70 C
32 Pin PLCC
(Pb-free)
MX29F002NTPC-70G
70
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002NTPC-90G
90
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002NBPC-70G
70
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
MX29F002NBPC-90G
90
30
5
0 C~70 C
32 Pin PDIP
(Pb-free)
REV. 1.5, MAR. 28, 2005
P/N: PM0547
45
MX29F002/002N T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
1
8
s
Chip Erase Time
3
24
s
Byte Programming Time
7
210
us
Chip Programming Time
3.5
10.5
sec
PARAMETER
Erase/Program Cycles
Note:
MIN.
100,000
Cycles
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25° C, 5V.
3.Maximum values measured at 25° C, 4.5V.
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
13.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
-100mA
+100mA
MIN.
UNIT
20
Years
Current
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
DATA RETENTION
PARAMETER
Data Retention Time
REV. 1.5, MAR. 28, 2005
P/N: PM0547
46
MX29F002/002N T/B
PACKAGE INFORMATION
REV. 1.5, MAR. 28, 2005
P/N: PM0547
47
MX29F002/002N T/B
REV. 1.5, MAR. 28, 2005
P/N: PM0547
48
MX29F002/002N T/B
REV. 1.5, MAR. 28, 2005
P/N: PM0547
49
MX29F002/002N T/B
REVISION HISTORY
Revision Description
Page
Date
1.0
P1
DEC/27/1999
1.1
1.2
1.3
1.4
1.5
1.Removed "Advanced Information" datasheet marking and
contain information on products in full production
2.The modification summary of Revision 0.9.8 to Revision 1.0:
2-1.Program/erase cycle times:10K cycles-->100K cycles
2-2.To add data retention 20 years
2-3.To add industrial grade range from "Read Mode" to "Full Range"
2-4.To remove A9 from "timing waveform for sector protection for
system without 12V"
To remove A9 from "timing waveform for chip unprotection for
system without 12V"
2-5.Multi-sector erase time-out:30ms-->30us, tBAL:80us-->100us
Modified "Package Information"
1. Corrected typing error
1. Changed part no. from MX29F002/002N to MX29F002/002NT/B
1. Added Pb-free option for PDIP package
1. Added Pb-free option for all commercial-grade package with 70ns & 90ns
P1,46
P1,46
P17,19,21,41-43
P36
P37
P8,20,21
P45~47
All
All
P43
P44,45
JUN/14/2001
JUN/11/2002
NOV/11/2002
NOV/08/2004
MAR/28/2005
REV. 1.5, MAR. 28, 2005
P/N: PM0547
50
MX29F002/002N T/B
MACRONIX INTERNATIONAL CO., LTD.
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http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.