ES1AL - ES1JL 1.0 AMP. Surface Mount Super Fast Rectifiers Sub SMA Features For surface mounted application Low profile package Low power loss, high efficiency, Ideal for automated placement Glass passivated chip junction High temperature soldering: 260OC/10 seconds at terminals Mechanical Data Cases: Sub SMA plastic case Terminal : Pure tin plated, lead free. Polarity: Color band cathode end Packing: 12mm tape per EIA STD RS-481 Weight: approx. 15mg Marking: As below table Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES ES ES Type Number 1AL 1BL 1CL 1DL 1FL 1GL Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 VRRM Maximum RMS Voltage Maximum DC Blocking Voltage Marking Code Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 1.0A o Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA=100 C 35 70 105 140 210 280 350 VDC 50 100 150 200 300 400 500 600 EHLYM EJLYM EALYM EBLYM ECLYM EDLYM EFLYM EGLYM 1.0 A IFSM 30 A VF 0.95 1.3 Cj RθJA RθJL TJ TSTG 1.7 5.0 100 35 IR Trr Notes: V I(AV) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Storage Temperature Range ES Units 1JL V 600 V 420 VRMS Maximum Reverse Recovery Time ( Note 1 ) Operating Temperature Range ES 1HL 500 10 8 85 35 -55 to +150 -55 to +150 V uA uA nS pF o C /W o o C C 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area. Version: A06 RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 1.2 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE. ( C) -E S1 DL L 1F ES -E S1 JL 1 L 0.2 L G S1 -E 1H 0.4 10 ES 0.6 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS ES 1A L 0.8 INSTANTANEOUS FORWARD CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 1.0 0.1 30 0.01 25 0.4 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 0.8 1.0 1.2 1.4 1.6 1.8 20 15 10 FIG.5- TYPICAL REVERSE CHARACTERISTICS 1000 5.0 100 10 1 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 14 JUNCTION CAPACITANCE.(pF) 0.6 FORWARD VOLTAGE. (V) Tj=25 0C f=1.0MHz Vsig=50mVp-p 12 ES1 10 AL - ES 1DL ES 8.0 1FL -E S1J L 6.0 INSTANTANEOUS REVERSE CURRENT. ( A) PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Tj=125 0C 10 Tj=85 0C 1 Tj=25 0C 0.1 4.0 2.0 0 1 0 0.01 100 10 0 REVERSE VOLTAGE. (V) 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06