MOSFET SMD Type Dual P-Channel MOSFET AO6801A (KO6801A) ( SOT-23-6 ) Unit: mm +0.1 0.4 -0.1 ● VDS (V) =-30V 6 5 4 1 2 3 0.4 ■ Features ● RDS(ON) ＜ 115mΩ (VGS =-10V) +0.2 2.8 -0.1 +0.2 1.6 -0.1 ● ID =-2.3A (VGS =-10V) ● RDS(ON) ＜ 200mΩ (VGS =-2.5V) 0.55 ● RDS(ON) ＜ 150mΩ (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 D1 +0.1 1.1 -0.1 +0.2 -0.1 0-0.1 G2 G1 S1 +0.1 0.68 -0.1 D2 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -2.3 -2 A -11 1.15 0.73 W 110 150 RthJL 80 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual P-Channel MOSFET AO6801A (KO6801A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current VGS(th) RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Test Conditions ID=-250μA, VGS=0V Min -1 VDS=-30V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±12V VDS=VGS , ID=-250μA -0.6 190 150 VGS=-2.5V, ID=-1A 200 -11 260 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 4 VGS=-10V, VDS=-15V, ID=-2.3A 7 4 0.7 Turn-Off DelayTime td(off) Diode Forward Voltage VSD VGS=-10V, VDS=-15V, RL=6.5Ω, RGEN=3Ω ■ Marking Marking 81** www.kexin.com.cn Ω nC 3.5 ns 20 5 IF=-2.3A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 2 5.9 2.8 tr IS pF 12 Turn-On Rise Time Qrr 315 20 6 Maximum Body-Diode Continuous Current S 37 1 Body Diode Reverse Recovery Charge mΩ A 8 Qgd trr V VGS=-10V, ID=-2.3A TJ=125℃ td(on) Body Diode Reverse Recovery Time -1.4 VGS=-4.5V, ID=-2A Gate Drain Charge tf nA 115 VDS=-5V, ID=-2.3A uA ±100 VGS=-10V, ID=-2.3A VGS=-10V, VDS=-5V Unit V Turn-On DelayTime Turn-Off Fall Time Max VDS=-30V, VGS=0V Qg Qgs Typ -30 11.5 15 4.5 nC -1.5 A -1 V MOSFET SMD Type Dual P-Channel MOSFET AO6801A (KO6801A) ■ Typical Characterisitics 15 10 -4.5V -10V 12 VDS=-5V 8 -3V 6 -2.5V -ID(A) -ID (A) -6V 9 6 VGS=-2V 3 4 125°C 2 25°C 0 0 0 1 2 3 4 0 5 210 3 4 Normalized On-Resistance 2 190 VGS=-2.5V 170 RDS(ON) (mΩ Ω) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 130 VGS=-4.5V 110 90 VGS=-10V 70 50 1.8 VGS=-10V ID=-2.3A 1.6 1.4 VGS=-2.5V ID=-1A 1.2 VGS=-4.5V ID=-2A 1 0.8 0 1 0 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 250 100 125 150 175 1.0E+00 -IS (A) 25°C 75 1.0E+01 125°C 100 50 1.0E+02 ID=-2.3A 150 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 200 RDS(ON) (mΩ Ω) 1 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type Dual P-Channel MOSFET AO6801A (KO6801A) ■ Typical Characterisitics 10 400 VDS=-15V ID=-2.3A Ciss 300 Capacitance (pF) -VGS (Volts) 8 6 4 200 100 2 0 Coss Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 1000 10µs RDS(ON) limited 1.0 100µs 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 0.1 DC 1 VDS (Volts) 100 10 10s 1 0.0 0.01 Power (W) ID (Amps) 10.0 10 100 0.00001 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 10 100