1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection • Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler APPLICATION This MI DFB laser is intended for long reach applications (≤80km) at 10Gb/s. DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified) Rating Parameter Symbol Condition Operating Case Temperature Top Storage Temperature Unit Min. Max. - -20 +70 Tstg - -40 +85 °C °C Optical Output Power Pf CW - 5 mW Laser Forward Current IF CW - 150 mA Laser Reverse Voltage VR CW - 2 V Modulator Forward Voltage Vm CW -5 +1 V Photodiode Forward Current - - - 1 mA Photodiode Reverse Voltage VDR - - 10 V Cooling Heating Cooling Heating -2.5 -0.9 +2.5 +1.4 - Tth ATC Operation -20 +70 °C - 260°C - 10 sec TEC Voltage Vc TEC Current Ic Thermistor Temperature Lead Soldering Time Edition 1.3 July 2004 1 V A 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified) Parameter Limits Type Symbol Test Condition Peak Wavelength Wp Note (1) 1530 - 1565 nm Threshold Current Ith CW, Vm=Vo - - 30 mA Threshold Power Pth CW, IF=Ith, Vm=Vo - - 75 µW Operating Current Iop - 40 - 100 mA Forward Voltage VF CW, IF=Iop - 1.4 2.0 V Output Power Pf Note (1) -1.0 - - dBm Tracking Error TE CW, IF=Iop, Vm=Vo, Im-APC, Tc=-20 to 70°C -0.5 - +0.5 dB 10Gb/s, NRZ, PRBS=223-1, IF=Iop, Vm=Vo & (Vo-Vmod), -3dB, FWHM - - 0.04 10Gb/s, NRZ, PRBS=223-1, IF=Iop, Vm=Vo & (Vo-Vmod), -20dB, FWHM - - 0.30 Spectral Width ∆λp Min. Max. Unit nm Sidemode Suppression Ratio SSR Note (1) 35 - - dB Relative Intensity Noise RIN f=10MHz to 8.5GHz, Vm=Vo, IF=Iop, 8% Reflection - - -120 dB/Hz Kink K Ith +5mA to 1.5 x Iop No Kink - Mode Hops - Ith +5mA to 1.5 x Iop No Mode Hops - Optical Isolation Is Tc=-20 to +70°C 25 35 - dB On Level Modulation Vo - -0.7 - 0 V Vmod (Vo-Vmod)-3.3V, Rext=10dB - - 2.6 Vpp Modulator Drive Voltage 2 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified) Parameter Limits Type Symbol Test Condition Rext IF=Iop, Vm=Vo at On-Level, Vm=Vo-Vmod at Off-Level 10 - - dB Pd Note (2) - - 2.0 dB Rise/Fall Time Tr, Tf IF=Iop, Vm=Vo, 20% to 80% - 20 25 ps Cut-off Frequency S21 -3dB, IF=Iop,Vm=Vo-0.5|Vmod| 10 - - GHz In-Band Ripple ∆G IF=Iop, 0.1 to 10GHz, Vm=Vo-0.5|Vmod| -1.0 - +1.0 dB DC to 5GHz, Vm=Vo, IF=Iop, 50Ω Test Set 8 - - dB 5 to 10GHz, Vm=Vo, IF=Iop, 50Ω Test Set 5 - - dB RF Extinction Ratio Transmission Penalty due to Dispersion RF Return Loss S11 Min. Max. Unit Monitor Current Im Note (1), VDR=5V 0.04 - 1.5 mA Monitor Dark Current Id VDR=5V - 2 100 nA Monitor Diode Capacitance Ct VDR=5V, f=10MHz - 2 15 pF TEC Capacity ∆T PTEC=2.4W, IF=Iop 45 - - °C TEC Current ITEC IF=Iop, ∆T=45°C - - 1.0 A TEC Voltage VTEC IF=Iop, ∆T=45°C - - 2.4 V TEC Power Dissipation PTEC IF=Iop - - 2.4 W Rth TL=25°C 9.5 - 10.5 kΩ B - 3270 3450 3630 K Thermal Resistance Thermistor B Constant Note (1) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod) Note (2) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=1600ps/nm, Dispersion Penalty at Bit-Error-Rate=1.0E-10 3 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C Fig. 1 Lasing Spectrum Relative Intensity (10 dB/div.) 10 Gb/s PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) Fig. 2 Output Power & Monitor Current vs. Forward Current 4 1 Vo=-0.5V Pf TLD=25°C 3 0.75 Im 2 0.5 1 0.25 0 0 20 40 60 80 Forward Current, IF (mA) 4 0 100 Monitor Current, Im (mA) Output Power, Pf (mW) Wavelength (Span=1 nm/div, Res.=0.1nm) 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C Fig. 3 Extinction Ratio vs. Modulation Applied Voltage Fig. 4 Cut-off Frequency (S21) Relative Output (dB) -5 -10 -15 12 9 6 3 0 -3 -6 -9 -12 0 -20 0 0.5 1.0 1.5 2.0 2.5 5 10 15 20 Frequency, f (GHz) Modulation Applied Voltage (V) Fig. 6 Transmission Characteristics Fig. 5 RF Return Loss (S11) 0 10-4 10-6 TLD=25°C, ILD=70mA, Vo=-0.5V, Vpp=2.0V, 9.95328Gb/s, PRBS=223-1, Power penalty=+1.0dB (@BER=10-10), Dispersion=1600 ps/nm 10-7 Back to Back After 1600 ps/nm 10-5 -10 Bit Error Rate Return Loss (dB) Extinction Ratio (dB) 0 -20 -30 0 5 10 15 20 Frequency, f (GHz) 10-8 10-9 10-10 10-11 10-12 -23 -22 -21 -20 -19 -18 -17 -16 Received Optical Power (dBm) 5 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C “NP” PACKAGE UNIT: mm 17.24±0.25 15.24±0.25 7-0.5 2.54±0.20 PIN 7 8.17±0.25 5.41±0.25 7 4.83±0.20 1.25 7-0.15±0.05 ø0.9±0.1 8.89±0.15 12.7±0.25 8.25±0.20 ø5.2±0.25 PIN 1 6 TOP VIEW 5 4 3 TEC 2 1 TH 10KΩ 50Ω 4-ø2.67±0.2 ø4.16 5.08±0.25 10.0±0.25 8 20.83±0.25 22.00±0.25 26.04±0.25 29.97±0.25 *L 25.0±0.5 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 Thermistor Thermistor LD Anode Power Monitor Anode Power Monitor Cathode Thermoelectirc Cooler (+) Thermoelectric Cooler (-) Modulator Anode (-) Case Ground: LD Cathode 0.5±0.2 PIN 8 5.47±0.2 * Pigtail length (L) and connector type are specified in the detail (individual) specification. CONNECTOR For further information please contact: CAUTION Eudyna Devices USA Inc. Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6