Eudyna FLD5F20NP-C 1,550nm modulator integrated dfb laser Datasheet

1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
FEATURES
• Modulator Integrated DFB Laser Diode Module
• CW operation of DFB laser section
• Modulation voltage applied only to modulator section
• High speed butterfly package with GPO connection
• Built-in optical isolator, monitor photodiode, thermistor, and
thermo-electric cooler
APPLICATION
This MI DFB laser is intended for long reach applications (≤80km)
at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator
monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation
voltage is applied to the modulator section while the laser section operates CW allowing extremely low
wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation.
The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical
coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a
thermo-electric cooler.
ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)
Rating
Parameter
Symbol
Condition
Operating Case Temperature
Top
Storage Temperature
Unit
Min.
Max.
-
-20
+70
Tstg
-
-40
+85
°C
°C
Optical Output Power
Pf
CW
-
5
mW
Laser Forward Current
IF
CW
-
150
mA
Laser Reverse Voltage
VR
CW
-
2
V
Modulator Forward Voltage
Vm
CW
-5
+1
V
Photodiode Forward Current
-
-
-
1
mA
Photodiode Reverse Voltage
VDR
-
-
10
V
Cooling
Heating
Cooling
Heating
-2.5
-0.9
+2.5
+1.4
-
Tth
ATC Operation
-20
+70
°C
-
260°C
-
10
sec
TEC Voltage
Vc
TEC Current
Ic
Thermistor Temperature
Lead Soldering Time
Edition 1.3
July 2004
1
V
A
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified)
Parameter
Limits
Type
Symbol
Test Condition
Peak Wavelength
Wp
Note (1)
1530
-
1565
nm
Threshold Current
Ith
CW, Vm=Vo
-
-
30
mA
Threshold Power
Pth
CW, IF=Ith, Vm=Vo
-
-
75
µW
Operating Current
Iop
-
40
-
100
mA
Forward Voltage
VF
CW, IF=Iop
-
1.4
2.0
V
Output Power
Pf
Note (1)
-1.0
-
-
dBm
Tracking Error
TE
CW, IF=Iop, Vm=Vo, Im-APC,
Tc=-20 to 70°C
-0.5
-
+0.5
dB
10Gb/s, NRZ, PRBS=223-1,
IF=Iop, Vm=Vo & (Vo-Vmod),
-3dB, FWHM
-
-
0.04
10Gb/s, NRZ, PRBS=223-1,
IF=Iop, Vm=Vo & (Vo-Vmod),
-20dB, FWHM
-
-
0.30
Spectral Width
∆λp
Min.
Max.
Unit
nm
Sidemode Suppression Ratio
SSR
Note (1)
35
-
-
dB
Relative Intensity Noise
RIN
f=10MHz to 8.5GHz,
Vm=Vo, IF=Iop, 8% Reflection
-
-
-120
dB/Hz
Kink
K
Ith +5mA to 1.5 x Iop
No Kink
-
Mode Hops
-
Ith +5mA to 1.5 x Iop
No Mode Hops
-
Optical Isolation
Is
Tc=-20 to +70°C
25
35
-
dB
On Level Modulation
Vo
-
-0.7
-
0
V
Vmod
(Vo-Vmod)-3.3V,
Rext=10dB
-
-
2.6
Vpp
Modulator Drive Voltage
2
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified)
Parameter
Limits
Type
Symbol
Test Condition
Rext
IF=Iop, Vm=Vo at On-Level,
Vm=Vo-Vmod at Off-Level
10
-
-
dB
Pd
Note (2)
-
-
2.0
dB
Rise/Fall Time
Tr, Tf
IF=Iop, Vm=Vo, 20% to 80%
-
20
25
ps
Cut-off Frequency
S21
-3dB, IF=Iop,Vm=Vo-0.5|Vmod|
10
-
-
GHz
In-Band Ripple
∆G
IF=Iop, 0.1 to 10GHz,
Vm=Vo-0.5|Vmod|
-1.0
-
+1.0
dB
DC to 5GHz, Vm=Vo, IF=Iop,
50Ω Test Set
8
-
-
dB
5 to 10GHz, Vm=Vo, IF=Iop,
50Ω Test Set
5
-
-
dB
RF Extinction Ratio
Transmission Penalty due
to Dispersion
RF Return Loss
S11
Min.
Max.
Unit
Monitor Current
Im
Note (1), VDR=5V
0.04
-
1.5
mA
Monitor Dark Current
Id
VDR=5V
-
2
100
nA
Monitor Diode Capacitance
Ct
VDR=5V, f=10MHz
-
2
15
pF
TEC Capacity
∆T
PTEC=2.4W, IF=Iop
45
-
-
°C
TEC Current
ITEC
IF=Iop, ∆T=45°C
-
-
1.0
A
TEC Voltage
VTEC
IF=Iop, ∆T=45°C
-
-
2.4
V
TEC Power Dissipation
PTEC
IF=Iop
-
-
2.4
W
Rth
TL=25°C
9.5
-
10.5
kΩ
B
-
3270
3450
3630
K
Thermal Resistance
Thermistor B Constant
Note (1) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Note (2) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Dispersion=1600ps/nm, Dispersion Penalty at Bit-Error-Rate=1.0E-10
3
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
Fig. 1 Lasing Spectrum
Relative Intensity (10 dB/div.)
10 Gb/s
PRBS=223-1
IF=Iop
Vm=Vo/(Vo-2)
Fig. 2 Output Power & Monitor Current
vs. Forward Current
4
1
Vo=-0.5V
Pf
TLD=25°C
3
0.75
Im
2
0.5
1
0.25
0
0
20
40
60
80
Forward Current, IF (mA)
4
0
100
Monitor Current, Im (mA)
Output Power, Pf (mW)
Wavelength (Span=1 nm/div, Res.=0.1nm)
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
Fig. 3 Extinction Ratio vs.
Modulation Applied Voltage
Fig. 4 Cut-off Frequency (S21)
Relative Output (dB)
-5
-10
-15
12
9
6
3
0
-3
-6
-9
-12
0
-20
0
0.5
1.0
1.5
2.0
2.5
5
10
15
20
Frequency, f (GHz)
Modulation Applied Voltage (V)
Fig. 6 Transmission Characteristics
Fig. 5 RF Return Loss (S11)
0
10-4
10-6
TLD=25°C,
ILD=70mA, Vo=-0.5V,
Vpp=2.0V,
9.95328Gb/s,
PRBS=223-1,
Power penalty=+1.0dB
(@BER=10-10),
Dispersion=1600 ps/nm
10-7
Back to Back
After 1600 ps/nm
10-5
-10
Bit Error Rate
Return Loss (dB)
Extinction Ratio (dB)
0
-20
-30
0
5
10
15
20
Frequency, f (GHz)
10-8
10-9
10-10
10-11
10-12
-23 -22 -21 -20 -19 -18 -17 -16
Received Optical Power (dBm)
5
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-C
“NP” PACKAGE
UNIT: mm
17.24±0.25
15.24±0.25
7-0.5
2.54±0.20
PIN 7
8.17±0.25
5.41±0.25
7
4.83±0.20
1.25
7-0.15±0.05
ø0.9±0.1
8.89±0.15
12.7±0.25
8.25±0.20
ø5.2±0.25
PIN 1
6
TOP VIEW
5
4
3
TEC
2
1
TH
10KΩ
50Ω
4-ø2.67±0.2
ø4.16
5.08±0.25
10.0±0.25
8
20.83±0.25
22.00±0.25
26.04±0.25
29.97±0.25
*L
25.0±0.5
#
PIN DESIGNATIONS
1
2
3
4
5
6
7
8
Thermistor
Thermistor
LD Anode
Power Monitor Anode
Power Monitor Cathode
Thermoelectirc Cooler (+)
Thermoelectric Cooler (-)
Modulator Anode (-)
Case Ground: LD Cathode
0.5±0.2
PIN 8
5.47±0.2
* Pigtail length (L) and connector type are
specified in the detail (individual) specification.
CONNECTOR
For further information please contact:
CAUTION
Eudyna Devices USA Inc.
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
6
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