ON NVR4501N Power mosfet Datasheet

NTR4501N, NVR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•
•
•
•
•
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
20 V
RDS(on) Typ
ID Max
(Note 1)
70 mW @ 4.5 V
3.6 A
88 mW @ 2.5 V
3.1 A
N−Channel
Applications
• Load/Power Switch for Portables
• Load/Power Switch for Computing
• DC−DC Conversion
D
G
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
ID
3.2
A
2.4
A
Continuous Drain
Current (Note 1)
Steady
State
Steady State Power
Dissipation (Note 1)
Pulsed Drain Current
TA = 25°C
TA = 85°C
Steady State
tp = 10 ms
PD
1.25
W
10.0
A
TJ,
Tstg
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
3
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
1
IDM
Operating Junction and Storage Temperature
S
Symbol
Max
Unit
Junction−to−Ambient (Note 1)
RqJA
100
°C/W
Junction−to−Ambient (Note 2)
RqJA
300
xR1 MG
G
2
SOT−23
CASE 318
STYLE 21
1
Gate
2
Source
TR1 = Device Code for NTR4501N
VR1 = Device Code for NVR4501N
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device
Package
Shipping†
NTR4501NT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
NVR4501NT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 15
1
Publication Order Number:
NTR4501N/D
NTR4501N, NVR4501N
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
24.5
V
22
mV/°C
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V(BR)DSS/TJ
IDSS
VGS = 0 V
TJ = 25°C
1.5
mA
VDS = 16 V
TJ = 85°C
10
mA
±100
nA
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = 250 mA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3)
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.65
1.2
−2.3
V
mV/°C
VGS = 4.5 V, ID = 3.6 A
70
80
VGS = 2.5 V, ID = 3.1 A
88
105
VDS = 5.0 V, ID = 3.6 A
9
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
200
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
80
pF
50
QG(TOT)
2.4
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A
6.0
Gate−to−Source Gate Charge
QGS
0.5
Gate−to−Drain Charge
QGD
0.6
td(on)
6.5
13
12
24
12
24
3
6
0.8
1.2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 10 V,
ID = 3.6 A, RG = 6.0 W
tf
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Reverse Recovery Charge
ta
tb
VGS = 0 V, ISD = 1.6 A
V
7.1
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 1.6 A
QRR
5
1.9
3.0
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTR4501N, NVR4501N
8
VGS = 2.0 V T = 25°C
J
VGS = 10 V
VGS = 2.2 V
6.0
5.0
VGS = 3.0 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
7.0
VGS = 1.8 V
4.0
3.0
VGS = 1.6 V
2.0
VGS = 1.4 V
1.0
VDS ≥ 10 V
7
6
5
4
3
2
TJ = −55°C
VGS = 1.2 V
0
0
0
1
2
3
4
5
6
7
8
9
0.5
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = 3.2 A
TJ = 25°C
0.20
0.15
0.10
2
4
3
5
6
0.10
TJ = 25°C
VGS = 2.5 V
0.09
0.08
VGS = 4.5 V
0.07
0.06
0.05
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1000
VGS = 0 V
ID = 3.2 A
VGS = 4.5 V
1.2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.4
1.0
0.8
0.6
−50
2.0
Figure 2. Transfer Characteristics
0.25
1
1.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.05
TJ = 25°C
TJ = 125°C
1
−25
0
25
50
75
100
125
TJ = 150°C
100
10
TJ = 100°C
1.0
150
2
TJ, JUNCTION TEMPERATURE (°C)
4
6
8
10
12
14
16
18
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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3
20
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
300
250
Ciss
200
150
100
Coss
50
Crss
0
0
2.5
5
7.5
10
12.5
15
20
17.5
5.0
15
QT
4.0
12
VDS
VGS
9
3.0
QGD
QGS
2.0
6
3
1.0
TJ = 25°C
ID = 3.2 A
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
QG, TOTAL GATE CHARGE (nC)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
100
IS, SOURCE CURRENT (AMPS)
4
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
td(off)
tr
10
t, TIME (ns)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
350
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTR4501N, NVR4501N
td(on)
tf
1
10
3
2
1
0
0.3
0.1
1
VGS = 0 V
TJ = 25°C
100
0.6
1.2
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
TRANSIENT THERMAL RESISTANCE,
RqJA (°C/W)
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
1
0.01
0.1
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME, tp (s)
Figure 11. Thermal Response
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4
1
10
100
1000
NTR4501N, NVR4501N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
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NTR4501N/D