IRF640B/IRFS640B IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • • • • • • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 GD S IRF Series TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current IRF640B IRFS640B 200 - Continuous (TC = 100°C) Units V 18 18 * A 11.4 11.4 * A 72 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 13.9 5.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) 72 (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 250 mJ 139 1.11 43 0.35 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient IRF640B 0.9 IRFS640B 2.89 Units °C/W 0.5 -- °C/W 62.5 62.5 °C/W www.kersemi.com Symbol T Parameter Test Conditions Min Typ Max Units 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.2 VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.145 0.18 Ω -- 13 -- S -- 1300 1700 pF -- 175 230 pF -- 45 60 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.0 A gFS Forward Transconductance VDS = 40 V, ID = 9.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 18 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4, 5) -- 20 50 ns -- 145 300 ns -- 145 300 ns -- 110 230 ns -- 45 58 nC -- 6.5 -- nC -- 22 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A ISM -- -- 72 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 18 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs (Note 4) -- 195 -- ns -- 1.47 -- µC IRF640B/IRFS640B Electrical Characteristics IRF640B/IRFS640B VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 0 25 C 10 o -55 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 0.8 VGS = 20V 0.6 0.4 0.2 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 0.0 0 10 20 30 40 50 60 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 12 VDS = 40V 2500 Capacitance [pF] Ciss 2000 Coss 1500 Crss 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 500 VGS, Gate-Source Voltage [V] 10 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 18 A 0 -1 10 0 0 10 1 10 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics IRF640B/IRFS640B 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 9.0 A 0.5 0.0 -100 200 -50 0 50 100 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 10 2 10 100 µs 1 ms ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 1 10 ms DC 0 10 200 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 150 o o TJ, Junction Temperature [ C] ※ Notes : o 1 10 10 ms 100 ms DC 0 10 ※ Notes : -1 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 -2 10 2 10 10 0 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF640B 20 ID, Drain Current [A] 16 12 8 4 0 25 50 75 100 125 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 150 Figure 9-2. Maximum Safe Operating Area for IRFS640B (t), T h e r m a l R e s p o n s e IRF640B/IRFS640B 10 0 D = 0 .5 ※ N o te s : 1 . Z θ J C (t) = 0 .9 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 10 0 .1 -1 0 .0 5 PDM θ JC 0 .0 2 Z 0 .0 1 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 2 .8 9 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 θ JC (t), T h e rm a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for IRF640B PDM 0 .0 1 Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS640B 1 50KΩ Qg 200nF 12V IRF640B/IRFS640B VGS Same Type as DUT 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% tr td(on) td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ID (t) VDS (t) VDD tp Time IRF640B/IRFS640B DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop VDD 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.00 ±0.20 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 IRF640B/IRFS640B TO-220 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 2.76 ±0.20 IRF640B/IRFS640B TO-220F